Patent
US 11,029,213Title: EP I TAXIAL GRAPHENE QUANTUM DOTS FOR HIGH-PERFORMANCE TERAHERTZ BOLOMETERS
GASKILL, Kurt, FATIMY, Abdel El, BARBARA, Paola
GEORGETOWN UNIVERSITY·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,029,213Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A hot-electron bolometer comprising: a SiC substrate; a radiation detection area including a quantum dot pattern of epitaxial graphene formed on the SiC substrate; and a source electrode and drain electrode contacting the quantum dot pattern. Currently amended
The hot-electron bolometer of claim 1, wherein the source electrode and the drain electrode are formed of graphene and layers of Cr and Au. Original
The hot-electron bolometer of claim 1, further comprising an antenna coupled thereto. Original
The hot-electron bolometer of claim 1, wherein the quantum dot pattern includes a quantum dot having a diameter approximately equal to or less than 200 nm. Original
The hot-electron bolometer of claim 1, wherein the SiC substrate surface includes basal plane terraces bounded by steps. Original
The hot-electron bolometer of claim 1, further comprising at least one gate electrode. Original
The hot-electron bolometer of claim 1, further comprising magnetic molecules grafted to the quantum dot pattern. Original
The hot-electron bolometer of claim 1, further comprising multiple quantum dot patterns connected in parallel formed on the SiC substrate. Original
. Canceled
. Canceled
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
hot-electron bolometer
hybrid structure bolometer
Materials described outside the worked examples.
SiC
epitaxial graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
temperature coefficient of resistance for 30 nm epitaxial graphene quantum dot at 6 K | 430 MΩ/K | epitaxial graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,029,213Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A hot-electron bolometer comprising: a SiC substrate; a radiation detection area including a quantum dot pattern of epitaxial graphene formed on the SiC substrate; and a source electrode and drain electrode contacting the quantum dot pattern. Currently amended
The hot-electron bolometer of claim 1, wherein the source electrode and the drain electrode are formed of graphene and layers of Cr and Au. Original
The hot-electron bolometer of claim 1, further comprising an antenna coupled thereto. Original
The hot-electron bolometer of claim 1, wherein the quantum dot pattern includes a quantum dot having a diameter approximately equal to or less than 200 nm. Original
The hot-electron bolometer of claim 1, wherein the SiC substrate surface includes basal plane terraces bounded by steps. Original
The hot-electron bolometer of claim 1, further comprising at least one gate electrode. Original
The hot-electron bolometer of claim 1, further comprising magnetic molecules grafted to the quantum dot pattern. Original
The hot-electron bolometer of claim 1, further comprising multiple quantum dot patterns connected in parallel formed on the SiC substrate. Original
. Canceled
. Canceled
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
hot-electron bolometer
hybrid structure bolometer
Materials described outside the worked examples.
SiC
epitaxial graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
temperature coefficient of resistance for 30 nm epitaxial graphene quantum dot at 6 K | 430 MΩ/K | epitaxial graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,029,213Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A hot-electron bolometer comprising: a SiC substrate; a radiation detection area including a quantum dot pattern of epitaxial graphene formed on the SiC substrate; and a source electrode and drain electrode contacting the quantum dot pattern. Currently amended
The hot-electron bolometer of claim 1, wherein the source electrode and the drain electrode are formed of graphene and layers of Cr and Au. Original
The hot-electron bolometer of claim 1, further comprising an antenna coupled thereto. Original
The hot-electron bolometer of claim 1, wherein the quantum dot pattern includes a quantum dot having a diameter approximately equal to or less than 200 nm. Original
The hot-electron bolometer of claim 1, wherein the SiC substrate surface includes basal plane terraces bounded by steps. Original
The hot-electron bolometer of claim 1, further comprising at least one gate electrode. Original
The hot-electron bolometer of claim 1, further comprising magnetic molecules grafted to the quantum dot pattern. Original
The hot-electron bolometer of claim 1, further comprising multiple quantum dot patterns connected in parallel formed on the SiC substrate. Original
. Canceled
. Canceled
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
hot-electron bolometer
hybrid structure bolometer
Materials described outside the worked examples.
SiC
epitaxial graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
temperature coefficient of resistance for 30 nm epitaxial graphene quantum dot at 6 K | 430 MΩ/K | epitaxial graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,029,213Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A hot-electron bolometer comprising: a SiC substrate; a radiation detection area including a quantum dot pattern of epitaxial graphene formed on the SiC substrate; and a source electrode and drain electrode contacting the quantum dot pattern. Currently amended
The hot-electron bolometer of claim 1, wherein the source electrode and the drain electrode are formed of graphene and layers of Cr and Au. Original
The hot-electron bolometer of claim 1, further comprising an antenna coupled thereto. Original
The hot-electron bolometer of claim 1, wherein the quantum dot pattern includes a quantum dot having a diameter approximately equal to or less than 200 nm. Original
The hot-electron bolometer of claim 1, wherein the SiC substrate surface includes basal plane terraces bounded by steps. Original
The hot-electron bolometer of claim 1, further comprising at least one gate electrode. Original
The hot-electron bolometer of claim 1, further comprising magnetic molecules grafted to the quantum dot pattern. Original
The hot-electron bolometer of claim 1, further comprising multiple quantum dot patterns connected in parallel formed on the SiC substrate. Original
. Canceled
. Canceled
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
hot-electron bolometer
hybrid structure bolometer
Materials described outside the worked examples.
SiC
epitaxial graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
temperature coefficient of resistance for 30 nm epitaxial graphene quantum dot at 6 K | 430 MΩ/K | epitaxial graphene |
Related documents with shared materials, methods, properties, or citations.
Cr
Au
MoS₂
electrical responsivity of epitaxial graphene quantum dot bolometer |
| 10000000000 V/W |
epitaxial graphene |
electrical noise-equivalent power of epitaxial graphene quantum dot bolometer at 2.5 K | 2e-16 W/√Hz | epitaxial graphene |
thermal conductance of 30 nm dot at base temperature of 6 K | 7e-12 W/K | epitaxial graphene |
device intrinsic speed thermal time constant | — | epitaxial graphene |
Thickness | 30–700 nm | — |
Temperature | 2.5–80 K | — |
Temperature | 4–300 K | — |
— | 10–16 W | — |
— | 10–12 W | — |
Temperature | ≤ 6 K | — |
Temperature | ≤ 60 K | — |
Temperature | ≤ 9 K | — |
Temperature | ≤ 2 K | — |
Thickness | ≤ 200 nm | — |
Interfacial properties of MoS2 thin films grown on functional substrates
Cr
Au
MoS₂
electrical responsivity of epitaxial graphene quantum dot bolometer |
| 10000000000 V/W |
epitaxial graphene |
electrical noise-equivalent power of epitaxial graphene quantum dot bolometer at 2.5 K | 2e-16 W/√Hz | epitaxial graphene |
thermal conductance of 30 nm dot at base temperature of 6 K | 7e-12 W/K | epitaxial graphene |
device intrinsic speed thermal time constant | — | epitaxial graphene |
Thickness | 30–700 nm | — |
Temperature | 2.5–80 K | — |
Temperature | 4–300 K | — |
— | 10–16 W | — |
— | 10–12 W | — |
Temperature | ≤ 6 K | — |
Temperature | ≤ 60 K | — |
Temperature | ≤ 9 K | — |
Temperature | ≤ 2 K | — |
Thickness | ≤ 200 nm | — |
Interfacial properties of MoS2 thin films grown on functional substrates
Cr
Au
MoS₂
electrical responsivity of epitaxial graphene quantum dot bolometer |
| 10000000000 V/W |
epitaxial graphene |
electrical noise-equivalent power of epitaxial graphene quantum dot bolometer at 2.5 K | 2e-16 W/√Hz | epitaxial graphene |
thermal conductance of 30 nm dot at base temperature of 6 K | 7e-12 W/K | epitaxial graphene |
device intrinsic speed thermal time constant | — | epitaxial graphene |
Thickness | 30–700 nm | — |
Temperature | 2.5–80 K | — |
Temperature | 4–300 K | — |
— | 10–16 W | — |
— | 10–12 W | — |
Temperature | ≤ 6 K | — |
Temperature | ≤ 60 K | — |
Temperature | ≤ 9 K | — |
Temperature | ≤ 2 K | — |
Thickness | ≤ 200 nm | — |
Interfacial properties of MoS2 thin films grown on functional substrates
Cr
Au
MoS₂
electrical responsivity of epitaxial graphene quantum dot bolometer |
| 10000000000 V/W |
epitaxial graphene |
electrical noise-equivalent power of epitaxial graphene quantum dot bolometer at 2.5 K | 2e-16 W/√Hz | epitaxial graphene |
thermal conductance of 30 nm dot at base temperature of 6 K | 7e-12 W/K | epitaxial graphene |
device intrinsic speed thermal time constant | — | epitaxial graphene |
Thickness | 30–700 nm | — |
Temperature | 2.5–80 K | — |
Temperature | 4–300 K | — |
— | 10–16 W | — |
— | 10–12 W | — |
Temperature | ≤ 6 K | — |
Temperature | ≤ 60 K | — |
Temperature | ≤ 9 K | — |
Temperature | ≤ 2 K | — |
Thickness | ≤ 200 nm | — |
Interfacial properties of MoS2 thin films grown on functional substrates