Patent
US 8,283,694GaN Substrate
Keiji ISHIBASHI
US
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Patent
Atlas literature
Patent
US 8,283,694Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN substrate, having a surface in which a number of chlorine atoms per square centimeter of said surface is not more than 2x 1014, and a number of silicon atoms per square centimeter of said surface is not more than 3 x 1013, wherein a plane orientation of said surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure, and wherein the chlorine atoms and the silicon atoms adhere to the surface of the substrate.
The GaN substrate according to claim 1, wherein a surface roughness in Ra is not more than 1 nm 1 wherein Ra means arithmetical mean rou g hness.
The GaN substrate according to claim 1, wherein an affected layer formed on said surface has a thickness of not more than 50 nm.
An epitaxial layer-provided substrate, comprising: the GaN substrate according to claim 1; and an epitaxially grown layer formed on a surface of said GaN substrate.
A method of manufacturing an epitaxial layer-provided substrate, comprising: a substrate preparation step of preparing the GaN substrate according to claim 1; and a step of forming an epitaxially grown layer on a surface of the GaN substrate prepared by said substrate preparation step.
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
epitaxial layer-provided substrate
semiconductor device
Materials described outside the worked examples.
GaN substrate
GaN
epitaxially grown layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
chlorine atoms per square centimeter of GaN substrate surface | ≤ 200000000000000 atoms/cm2 | GaN |
silicon atoms per square centimeter of GaN substrate surface | ≤ 30000000000000 atoms/cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,283,694Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN substrate, having a surface in which a number of chlorine atoms per square centimeter of said surface is not more than 2x 1014, and a number of silicon atoms per square centimeter of said surface is not more than 3 x 1013, wherein a plane orientation of said surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure, and wherein the chlorine atoms and the silicon atoms adhere to the surface of the substrate.
The GaN substrate according to claim 1, wherein a surface roughness in Ra is not more than 1 nm 1 wherein Ra means arithmetical mean rou g hness.
The GaN substrate according to claim 1, wherein an affected layer formed on said surface has a thickness of not more than 50 nm.
An epitaxial layer-provided substrate, comprising: the GaN substrate according to claim 1; and an epitaxially grown layer formed on a surface of said GaN substrate.
A method of manufacturing an epitaxial layer-provided substrate, comprising: a substrate preparation step of preparing the GaN substrate according to claim 1; and a step of forming an epitaxially grown layer on a surface of the GaN substrate prepared by said substrate preparation step.
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
epitaxial layer-provided substrate
semiconductor device
Materials described outside the worked examples.
GaN substrate
GaN
epitaxially grown layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
chlorine atoms per square centimeter of GaN substrate surface | ≤ 200000000000000 atoms/cm2 | GaN |
silicon atoms per square centimeter of GaN substrate surface | ≤ 30000000000000 atoms/cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,283,694Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN substrate, having a surface in which a number of chlorine atoms per square centimeter of said surface is not more than 2x 1014, and a number of silicon atoms per square centimeter of said surface is not more than 3 x 1013, wherein a plane orientation of said surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure, and wherein the chlorine atoms and the silicon atoms adhere to the surface of the substrate.
The GaN substrate according to claim 1, wherein a surface roughness in Ra is not more than 1 nm 1 wherein Ra means arithmetical mean rou g hness.
The GaN substrate according to claim 1, wherein an affected layer formed on said surface has a thickness of not more than 50 nm.
An epitaxial layer-provided substrate, comprising: the GaN substrate according to claim 1; and an epitaxially grown layer formed on a surface of said GaN substrate.
A method of manufacturing an epitaxial layer-provided substrate, comprising: a substrate preparation step of preparing the GaN substrate according to claim 1; and a step of forming an epitaxially grown layer on a surface of the GaN substrate prepared by said substrate preparation step.
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
epitaxial layer-provided substrate
semiconductor device
Materials described outside the worked examples.
GaN substrate
GaN
epitaxially grown layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
chlorine atoms per square centimeter of GaN substrate surface | ≤ 200000000000000 atoms/cm2 | GaN |
silicon atoms per square centimeter of GaN substrate surface | ≤ 30000000000000 atoms/cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,283,694Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN substrate, having a surface in which a number of chlorine atoms per square centimeter of said surface is not more than 2x 1014, and a number of silicon atoms per square centimeter of said surface is not more than 3 x 1013, wherein a plane orientation of said surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure, and wherein the chlorine atoms and the silicon atoms adhere to the surface of the substrate.
The GaN substrate according to claim 1, wherein a surface roughness in Ra is not more than 1 nm 1 wherein Ra means arithmetical mean rou g hness.
The GaN substrate according to claim 1, wherein an affected layer formed on said surface has a thickness of not more than 50 nm.
An epitaxial layer-provided substrate, comprising: the GaN substrate according to claim 1; and an epitaxially grown layer formed on a surface of said GaN substrate.
A method of manufacturing an epitaxial layer-provided substrate, comprising: a substrate preparation step of preparing the GaN substrate according to claim 1; and a step of forming an epitaxially grown layer on a surface of the GaN substrate prepared by said substrate preparation step.
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
epitaxial layer-provided substrate
semiconductor device
Materials described outside the worked examples.
GaN substrate
GaN
epitaxially grown layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
chlorine atoms per square centimeter of GaN substrate surface | ≤ 200000000000000 atoms/cm2 | GaN |
silicon atoms per square centimeter of GaN substrate surface | ≤ 30000000000000 atoms/cm2 |
Related documents with shared materials, methods, properties, or citations.
chlorine (surface contaminant)
Cl
silicon (surface contaminant)
Si
SiO₂ abrasive grains
SiO₂
GaN |
surface roughness Ra (arithmetical mean roughness) | ≤ 1 nm | GaN |
thickness of affected layer on GaN substrate surface | ≤ 50 nm | GaN |
haze level of GaN substrate surface | ≤ 5 ppm | GaN |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
chlorine (surface contaminant)
Cl
silicon (surface contaminant)
Si
SiO₂ abrasive grains
SiO₂
GaN |
surface roughness Ra (arithmetical mean roughness) | ≤ 1 nm | GaN |
thickness of affected layer on GaN substrate surface | ≤ 50 nm | GaN |
haze level of GaN substrate surface | ≤ 5 ppm | GaN |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
chlorine (surface contaminant)
Cl
silicon (surface contaminant)
Si
SiO₂ abrasive grains
SiO₂
GaN |
surface roughness Ra (arithmetical mean roughness) | ≤ 1 nm | GaN |
thickness of affected layer on GaN substrate surface | ≤ 50 nm | GaN |
haze level of GaN substrate surface | ≤ 5 ppm | GaN |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
chlorine (surface contaminant)
Cl
silicon (surface contaminant)
Si
SiO₂ abrasive grains
SiO₂
GaN |
surface roughness Ra (arithmetical mean roughness) | ≤ 1 nm | GaN |
thickness of affected layer on GaN substrate surface | ≤ 50 nm | GaN |
haze level of GaN substrate surface | ≤ 5 ppm | GaN |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |