Patent
US 10,651,629GALLIUM NITRIDE CONTAINING LASER DEVICE CONFIGURED ON A PATTERNED SUBSTRATE
Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo et al.
Soraa Laser Diode, Inc.·US
Copyright © 2026 Matter42. All rights reserved.
active region
(InAl)GaN doped with magnesium species
(InAl)GaN:Mg
InGaN quantum wells
InGaN
indium tin oxide
ITO
metallization layer (Au, Ni, Pd, Pt, or Ti)
GaN substrate
GaN
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
InGaN |
emission_wavelength_green_range | 500–540 nm | InGaN |
Thickness | 1–40 nm | — |
Thickness | 0.2–5 nm | — |
Thickness | 5–1500 nm | — |
Thickness | 1–20 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 2.5–4 nm | — |
Thickness | 2–3.5 nm | — |
Thickness | 50–300 µm | — |
Thickness | 0.8–3 µm | — |
Thickness | 3–35 µm | — |
Thickness | 20–500 µm | — |
Thickness | 500–1500 µm | — |
Thickness | 0.5–50 µm | — |
Thickness | 395–420 nm | — |
Thickness | 500–550 nm | — |
Thickness | 10–50 nm | — |
Thickness | 4–7 nm | — |
Thickness | 2–5 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–150 nm | — |
Thickness | 1–2.5 µm | — |
Thickness | 20–250 nm | — |
Thickness | 80–400 nm | — |
Thickness | 2–4 nm | — |
Thickness | 4–8 nm | — |
Thickness | 8–20 nm | — |
Thickness | 3.5–6.5 nm | — |
Thickness | 2–4.5 nm | — |
Thickness | 3.5–7 nm | — |
Thickness | 3–4 nm | — |
Thickness | 3–6.5 nm | — |
Thickness | 3–8 nm | — |
Thickness | 50–3000 µm | — |
Thickness | 90–300 µm | — |
Thickness | 90–1600 um | — |
Thickness | 1–1.5 µm | — |
Thickness | 1.5–2 µm | — |
Thickness | 2–4 µm | — |
Thickness | 4–35 µm | — |
Thickness | 100–3000 nm | — |
Thickness | 20–150 nm | — |
Thickness | 2–7.5 nm | — |
Thickness | 15–100 nm | — |
Thickness | 5–20 nm | — |
Thickness | 400–1500 nm | — |
Thickness | 15–50 nm | — |
Thickness | 1–50 nm | — |
Thickness | 390–420 nm | — |
Thickness | 420–440 nm | — |
Thickness | 440–470 nm | — |
Thickness | 470–490 nm | — |
Thickness | 490–510 nm | — |
Thickness | 510–540 nm | — |
Thickness | 500–4000 nm | — |
Thickness | 500–1200 nm | — |
Thickness | 10–60 nm | — |
Thickness | 60–150 nm | — |
Thickness | 10–40 nm | — |
Thickness | 40–150 nm | — |
Temperature | 700–800 °C | — |
Temperature | 800–850 °C | — |
Temperature | 850–875 °C | — |
Thickness | 0.5–15 µm | — |
Thickness | 25–50 µm | — |
Thickness | 20–100 nm | — |
Thickness | 100–300 nm | — |
Temperature | 10–75 °C | — |
Temperature | 0–50 °C | — |
Thickness | 500–600 nm | — |
Thickness | 1–2 µm | — |
Thickness | 50–100 nm | — |
— | 300–400 W | — |
Thickness | 40–100 nm | — |
Thickness | 20–50 nm | — |
Thickness | 1–9 cm | — |
Thickness | 1–6 cm | — |
Thickness | 1–4.5 cm | — |
Thickness | 10–50 µm | — |
Thickness | 1–3 µm | — |
Thickness | 505–530 nm | — |
Thickness | 5–10 µm | — |
Thickness | 1–3 Å | — |
Thickness | ≤ 1 cm | — |
Voltage | ≤ 6 V | — |
Voltage | ≤ 5 V | — |
Voltage | ≤ 7 V | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 0.1 µm | — |
Thickness | ≥ 0.5 µm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 3 µm | — |
Temperature | ≥ 50 °C | — |
Thickness | 2–8 nm | — |
Thickness | 5–200 µm | — |
Thickness | 50–150 nm | — |
Thickness | 1.5–4 nm | — |
active region
(InAl)GaN doped with magnesium species
(InAl)GaN:Mg
InGaN quantum wells
InGaN
indium tin oxide
ITO
metallization layer (Au, Ni, Pd, Pt, or Ti)
GaN substrate
GaN
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
InGaN |
emission_wavelength_green_range | 500–540 nm | InGaN |
Thickness | 1–40 nm | — |
Thickness | 0.2–5 nm | — |
Thickness | 5–1500 nm | — |
Thickness | 1–20 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 2.5–4 nm | — |
Thickness | 2–3.5 nm | — |
Thickness | 50–300 µm | — |
Thickness | 0.8–3 µm | — |
Thickness | 3–35 µm | — |
Thickness | 20–500 µm | — |
Thickness | 500–1500 µm | — |
Thickness | 0.5–50 µm | — |
Thickness | 395–420 nm | — |
Thickness | 500–550 nm | — |
Thickness | 10–50 nm | — |
Thickness | 4–7 nm | — |
Thickness | 2–5 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–150 nm | — |
Thickness | 1–2.5 µm | — |
Thickness | 20–250 nm | — |
Thickness | 80–400 nm | — |
Thickness | 2–4 nm | — |
Thickness | 4–8 nm | — |
Thickness | 8–20 nm | — |
Thickness | 3.5–6.5 nm | — |
Thickness | 2–4.5 nm | — |
Thickness | 3.5–7 nm | — |
Thickness | 3–4 nm | — |
Thickness | 3–6.5 nm | — |
Thickness | 3–8 nm | — |
Thickness | 50–3000 µm | — |
Thickness | 90–300 µm | — |
Thickness | 90–1600 um | — |
Thickness | 1–1.5 µm | — |
Thickness | 1.5–2 µm | — |
Thickness | 2–4 µm | — |
Thickness | 4–35 µm | — |
Thickness | 100–3000 nm | — |
Thickness | 20–150 nm | — |
Thickness | 2–7.5 nm | — |
Thickness | 15–100 nm | — |
Thickness | 5–20 nm | — |
Thickness | 400–1500 nm | — |
Thickness | 15–50 nm | — |
Thickness | 1–50 nm | — |
Thickness | 390–420 nm | — |
Thickness | 420–440 nm | — |
Thickness | 440–470 nm | — |
Thickness | 470–490 nm | — |
Thickness | 490–510 nm | — |
Thickness | 510–540 nm | — |
Thickness | 500–4000 nm | — |
Thickness | 500–1200 nm | — |
Thickness | 10–60 nm | — |
Thickness | 60–150 nm | — |
Thickness | 10–40 nm | — |
Thickness | 40–150 nm | — |
Temperature | 700–800 °C | — |
Temperature | 800–850 °C | — |
Temperature | 850–875 °C | — |
Thickness | 0.5–15 µm | — |
Thickness | 25–50 µm | — |
Thickness | 20–100 nm | — |
Thickness | 100–300 nm | — |
Temperature | 10–75 °C | — |
Temperature | 0–50 °C | — |
Thickness | 500–600 nm | — |
Thickness | 1–2 µm | — |
Thickness | 50–100 nm | — |
— | 300–400 W | — |
Thickness | 40–100 nm | — |
Thickness | 20–50 nm | — |
Thickness | 1–9 cm | — |
Thickness | 1–6 cm | — |
Thickness | 1–4.5 cm | — |
Thickness | 10–50 µm | — |
Thickness | 1–3 µm | — |
Thickness | 505–530 nm | — |
Thickness | 5–10 µm | — |
Thickness | 1–3 Å | — |
Thickness | ≤ 1 cm | — |
Voltage | ≤ 6 V | — |
Voltage | ≤ 5 V | — |
Voltage | ≤ 7 V | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 0.1 µm | — |
Thickness | ≥ 0.5 µm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 3 µm | — |
Temperature | ≥ 50 °C | — |
Thickness | 2–8 nm | — |
Thickness | 5–200 µm | — |
Thickness | 50–150 nm | — |
Thickness | 1.5–4 nm | — |
active region
(InAl)GaN doped with magnesium species
(InAl)GaN:Mg
InGaN quantum wells
InGaN
indium tin oxide
ITO
metallization layer (Au, Ni, Pd, Pt, or Ti)
GaN substrate
GaN
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
InGaN |
emission_wavelength_green_range | 500–540 nm | InGaN |
Thickness | 1–40 nm | — |
Thickness | 0.2–5 nm | — |
Thickness | 5–1500 nm | — |
Thickness | 1–20 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 2.5–4 nm | — |
Thickness | 2–3.5 nm | — |
Thickness | 50–300 µm | — |
Thickness | 0.8–3 µm | — |
Thickness | 3–35 µm | — |
Thickness | 20–500 µm | — |
Thickness | 500–1500 µm | — |
Thickness | 0.5–50 µm | — |
Thickness | 395–420 nm | — |
Thickness | 500–550 nm | — |
Thickness | 10–50 nm | — |
Thickness | 4–7 nm | — |
Thickness | 2–5 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–150 nm | — |
Thickness | 1–2.5 µm | — |
Thickness | 20–250 nm | — |
Thickness | 80–400 nm | — |
Thickness | 2–4 nm | — |
Thickness | 4–8 nm | — |
Thickness | 8–20 nm | — |
Thickness | 3.5–6.5 nm | — |
Thickness | 2–4.5 nm | — |
Thickness | 3.5–7 nm | — |
Thickness | 3–4 nm | — |
Thickness | 3–6.5 nm | — |
Thickness | 3–8 nm | — |
Thickness | 50–3000 µm | — |
Thickness | 90–300 µm | — |
Thickness | 90–1600 um | — |
Thickness | 1–1.5 µm | — |
Thickness | 1.5–2 µm | — |
Thickness | 2–4 µm | — |
Thickness | 4–35 µm | — |
Thickness | 100–3000 nm | — |
Thickness | 20–150 nm | — |
Thickness | 2–7.5 nm | — |
Thickness | 15–100 nm | — |
Thickness | 5–20 nm | — |
Thickness | 400–1500 nm | — |
Thickness | 15–50 nm | — |
Thickness | 1–50 nm | — |
Thickness | 390–420 nm | — |
Thickness | 420–440 nm | — |
Thickness | 440–470 nm | — |
Thickness | 470–490 nm | — |
Thickness | 490–510 nm | — |
Thickness | 510–540 nm | — |
Thickness | 500–4000 nm | — |
Thickness | 500–1200 nm | — |
Thickness | 10–60 nm | — |
Thickness | 60–150 nm | — |
Thickness | 10–40 nm | — |
Thickness | 40–150 nm | — |
Temperature | 700–800 °C | — |
Temperature | 800–850 °C | — |
Temperature | 850–875 °C | — |
Thickness | 0.5–15 µm | — |
Thickness | 25–50 µm | — |
Thickness | 20–100 nm | — |
Thickness | 100–300 nm | — |
Temperature | 10–75 °C | — |
Temperature | 0–50 °C | — |
Thickness | 500–600 nm | — |
Thickness | 1–2 µm | — |
Thickness | 50–100 nm | — |
— | 300–400 W | — |
Thickness | 40–100 nm | — |
Thickness | 20–50 nm | — |
Thickness | 1–9 cm | — |
Thickness | 1–6 cm | — |
Thickness | 1–4.5 cm | — |
Thickness | 10–50 µm | — |
Thickness | 1–3 µm | — |
Thickness | 505–530 nm | — |
Thickness | 5–10 µm | — |
Thickness | 1–3 Å | — |
Thickness | ≤ 1 cm | — |
Voltage | ≤ 6 V | — |
Voltage | ≤ 5 V | — |
Voltage | ≤ 7 V | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 0.1 µm | — |
Thickness | ≥ 0.5 µm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 3 µm | — |
Temperature | ≥ 50 °C | — |
Thickness | 2–8 nm | — |
Thickness | 5–200 µm | — |
Thickness | 50–150 nm | — |
Thickness | 1.5–4 nm | — |
active region
(InAl)GaN doped with magnesium species
(InAl)GaN:Mg
InGaN quantum wells
InGaN
indium tin oxide
ITO
metallization layer (Au, Ni, Pd, Pt, or Ti)
GaN substrate
GaN
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
InGaN |
emission_wavelength_green_range | 500–540 nm | InGaN |
Thickness | 1–40 nm | — |
Thickness | 0.2–5 nm | — |
Thickness | 5–1500 nm | — |
Thickness | 1–20 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 2.5–4 nm | — |
Thickness | 2–3.5 nm | — |
Thickness | 50–300 µm | — |
Thickness | 0.8–3 µm | — |
Thickness | 3–35 µm | — |
Thickness | 20–500 µm | — |
Thickness | 500–1500 µm | — |
Thickness | 0.5–50 µm | — |
Thickness | 395–420 nm | — |
Thickness | 500–550 nm | — |
Thickness | 10–50 nm | — |
Thickness | 4–7 nm | — |
Thickness | 2–5 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–150 nm | — |
Thickness | 1–2.5 µm | — |
Thickness | 20–250 nm | — |
Thickness | 80–400 nm | — |
Thickness | 2–4 nm | — |
Thickness | 4–8 nm | — |
Thickness | 8–20 nm | — |
Thickness | 3.5–6.5 nm | — |
Thickness | 2–4.5 nm | — |
Thickness | 3.5–7 nm | — |
Thickness | 3–4 nm | — |
Thickness | 3–6.5 nm | — |
Thickness | 3–8 nm | — |
Thickness | 50–3000 µm | — |
Thickness | 90–300 µm | — |
Thickness | 90–1600 um | — |
Thickness | 1–1.5 µm | — |
Thickness | 1.5–2 µm | — |
Thickness | 2–4 µm | — |
Thickness | 4–35 µm | — |
Thickness | 100–3000 nm | — |
Thickness | 20–150 nm | — |
Thickness | 2–7.5 nm | — |
Thickness | 15–100 nm | — |
Thickness | 5–20 nm | — |
Thickness | 400–1500 nm | — |
Thickness | 15–50 nm | — |
Thickness | 1–50 nm | — |
Thickness | 390–420 nm | — |
Thickness | 420–440 nm | — |
Thickness | 440–470 nm | — |
Thickness | 470–490 nm | — |
Thickness | 490–510 nm | — |
Thickness | 510–540 nm | — |
Thickness | 500–4000 nm | — |
Thickness | 500–1200 nm | — |
Thickness | 10–60 nm | — |
Thickness | 60–150 nm | — |
Thickness | 10–40 nm | — |
Thickness | 40–150 nm | — |
Temperature | 700–800 °C | — |
Temperature | 800–850 °C | — |
Temperature | 850–875 °C | — |
Thickness | 0.5–15 µm | — |
Thickness | 25–50 µm | — |
Thickness | 20–100 nm | — |
Thickness | 100–300 nm | — |
Temperature | 10–75 °C | — |
Temperature | 0–50 °C | — |
Thickness | 500–600 nm | — |
Thickness | 1–2 µm | — |
Thickness | 50–100 nm | — |
— | 300–400 W | — |
Thickness | 40–100 nm | — |
Thickness | 20–50 nm | — |
Thickness | 1–9 cm | — |
Thickness | 1–6 cm | — |
Thickness | 1–4.5 cm | — |
Thickness | 10–50 µm | — |
Thickness | 1–3 µm | — |
Thickness | 505–530 nm | — |
Thickness | 5–10 µm | — |
Thickness | 1–3 Å | — |
Thickness | ≤ 1 cm | — |
Voltage | ≤ 6 V | — |
Voltage | ≤ 5 V | — |
Voltage | ≤ 7 V | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 0.1 µm | — |
Thickness | ≥ 0.5 µm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 3 µm | — |
Temperature | ≥ 50 °C | — |
Thickness | 2–8 nm | — |
Thickness | 5–200 µm | — |
Thickness | 50–150 nm | — |
Thickness | 1.5–4 nm | — |