OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES AND GROWTH STRUCTURES FOR LASER APPLICATIONS | Matter42 Literature
Patent
Atlas literature
Patent
US 11,862,937 B1
OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES AND GROWTH STRUCTURES FOR LASER APPLICATIONS
James W. Raring
KYOCERA SLD Laser, Inc., Goleta, CA (US)·Jan. 2, 2024·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1A is a simplified perspective view of a laser device fabricated on a semipolar substrate according to an embodi- ment of the present invention.
FIG. 2
FIG. 2 is a detailed cross-sectional view of a laser device fabricated on a non-polar substrate according to an embodi- ment of the present invention.
FIG. 3
FIG. 3 is a simplified diagram illustrating an epitaxial laser structure according to a preferred embodiment of the present invention.
FIG. 4
FIGS. 4 through 6 are simplified diagrams illustrating a laser device for a laser device according to a first embodi- ment of the present invention.
FIG. 5
FIG. 6
FIG. 7
FIGS. 7 through 8 are simplified diagrams illustrating a laser device for a laser device according to a second embodi- ment of the present invention.
FIG. 8
FIGS. 8 through 9: an n-GaN cladding layer with a thickness from 100 nm to 5000 nm with Si doping level of 5E₁₇ cm⁻³ to 3E₁₈ cm⁻³; an n-side SCH layer …
FIG. 9
FIGS. 9 through 10 are simplified diagrams illustrating a laser device for a laser device according to a third embodi- ment of the present invention.
FIG. 10
FIG. 11
FIGS. 11 through 13 are simplified diagrams illustrating a laser device for a laser device according to a fourth embodiment of the present invention.
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 12 dependent
1
IndependentGaNInGaNInGaNn-type gallium and nitrogen containing region (Si-doped)p-type gallium and nitrogen containing region (Mg-doped)GaN-based laser diode (Claim 1)
An optical device comprising: a gallium and nitrogen containing surface region; an n-type gallium and nitrogen containing region overly-ing the gallium and nitrogen containing surface region comprising a silicon entity; an n-side SCH layer comprising InGaN overlying the n-type gallium and nitrogen containing region; an active region overlying the n-side SCH layer, the active region comprising at least one quantum well having InGaN; 5 a laser stripe region formed overlying the active region, the laser stripe region characterized by a cavity orien-tation substantially parallel to a first-direction, the laser stripe region having a first end and a second end, the laser stripe region comprising a p-type gallium and nitrogen containing region comprising a magnesium entity; a dielectric layer overlying the laser stripe region and exposing an upper portion of the laser stripe region; a p-type metal region overlying the upper portion of the laser stripe region; a first facet provided on the first end of the laser stripe region; and a second facet provided on the second end of the laser stripe region, wherein the first facet is substantially parallel with the second facet, wherein one of the first facet or the second facet is configured to emit light characterized by a wavelength ranging from between 390 nm to 530 nm.
2
Dependent← claim 1GaN-based laser diode (Claim 1)
The optical device of claim 1, wherein the first facet comprises a first mirror surface.
4
Dependent← claim 1GaN-based laser diode (Claim 1)
The optical device of claim 1 wherein the active region includes one or more barrier layers.
5
Dependent← claim 1aluminum-containing electron blocking layerGaN-based laser diode (Claim 1)
The optical device of claim 1, further comprising an electron blocking layer comprising aluminum disposed between the active region and the p-type gallium and nitrogen containing region.
6
Dependent← claim 1GaN-based laser diode (Claim 1)
The optical device of claim 1 further comprising a spontaneously emitted light characterized by a wavelength ranging 390 nm to 420 nm, 420 nm to 440 nm, 440 nm to 470 nm, 470 nm to 490 nm, 490 nm to 510 nm, and 510 nm to 530 nm.
The optical device of claim 1 wherein the p-type metal region comprises gallium nitride comprising magnesium entities.
8
IndependentGaNInGaNInGaNAlGaN:Mgp-type gallium and nitrogen containing cladding layer (Mg-doped)p++ gallium and nitrogen containing contact layer (Mg-doped)GaN-based multiple quantum well laser diode (Claim 8)
An optical device comprising: a gallium and nitrogen containing surface region; an n-type gallium and nitrogen containing cladding layer overlying the gallium and nitrogen containing surface region; an n-side SCH layer overlying the n-type gallium and nitrogen containing cladding layer, the n-side SCH layer comprised of InGaN; 50 a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprised of InGaN quantum wells separated by gallium and nitrogen containing barriers; an electron blocking layer overlying the multiple quantum well active region, the electron blocking layer com-prised of AlGaN doped with magnesium; a p-type gallium and nitrogen containing cladding layer overlying the electronic blocking layer, the p-type gallium and nitrogen containing cladding layer having a magnesium doping; a p++—type gallium and nitrogen containing contact layer with a magnesium doping; a laser stripe region having a first end and a second end; a first facet provided on the first end of the laser stripe region, the first facet configured to emit light charac-terized by a wavelength ranging from between 390 nm to 420 nm, 420 nm to 440 nm, 440 nm to 470 nm, 470 nm to 490 nm, 490 nm to 510 nm, and 510 nm to 530 nm; and a second facet provided on the second end of the laser stripe region.
9
Dependent← claim 8GaN-based multiple quantum well laser diode (Claim 8)
The optical device of claim 8 wherein the n-type gallium and nitrogen containing cladding layer comprises a silicon doping.
10
Dependent← claim 8GaN-based multiple quantum well laser diode (Claim 8)
The optical device of claim 8 wherein the laser stripe region comprises an overlying dielectric layer exposing an upper portion of the laser stripe region.
11
IndependentGaNSiO₂HfO₂TiO₂Ta₂O₅ZrO₂GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
An optical device comprising: a gallium and nitrogen containing surface region; an n-type gallium and nitrogen containing region overly-ing the surface region; an active region overlying the n-type gallium and nitrogen containing region; at least one quantum well region configured within the active region; and a laser stripe region overlying a portion of the gallium and nitrogen containing surface region, the laser stripe region being characterized by a cavity orientation substantially parallel to the c-direction, the laser stripe region having a first end and a second end, the laser stripe region having a length of less than about 3000 microns and a width of less than about 50 microns, wherein the first end comprises a first mirror surface having an anti-reflective coating and is configured to emit light characterized by a wavelength ranging from about 390 nm to about 420 nm or from about 420 nm to about 440 nm, and the second end of the laser stripe region comprises a second mirror surface having a reflective coating selected from silicon dioxide, hafnia, titania, tantalum pentoxide, zirconia, or aluminum oxide.
12
Dependent← claim 11GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 wherein the first end of the laser stripe region includes a first cleaved facet and the second end of the laser stripe region includes a second cleaved facet.
13
Dependent← claim 11GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 further comprising an electron blocking layer overlying the active region.
14
Dependent← claim 11InGaNGaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 further comprising an n-side SCH layer overlying the n-type gallium and nitrogen containing region.
15
Dependent← claim 11GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 further comprising a p-side SCH layer overlying the active region. ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
p-type gallium and nitrogen containing region (Mg-doped)p-type laser stripe region
InGaNactive region quantum well
InGaNn-side SCH layer
n-type gallium and nitrogen containing region (Si-doped)
Materials
Materials described outside the worked examples.
gallium and nitrogen containing surface region/substrate
GaN
Substrate
InGaN (n-side SCH layer)
InGaN
N-Side Separate Confinement Heterostructure Layer
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
thickness
Thickness
FIGS. 8 through 9: an n-GaN cladding layer with a thickness from 100 nm to 5000 nm with Si doping level of 5E₁₇ cm⁻³ to 3E₁₈ cm⁻³; an n-side SCH layer …
OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES AND GROWTH STRUCTURES FOR LASER APPLICATIONS
James W. Raring
KYOCERA SLD Laser, Inc., Goleta, CA (US)·Jan. 2, 2024·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1A is a simplified perspective view of a laser device fabricated on a semipolar substrate according to an embodi- ment of the present invention.
FIG. 2
FIG. 2 is a detailed cross-sectional view of a laser device fabricated on a non-polar substrate according to an embodi- ment of the present invention.
FIG. 3
FIG. 3 is a simplified diagram illustrating an epitaxial laser structure according to a preferred embodiment of the present invention.
FIG. 4
FIGS. 4 through 6 are simplified diagrams illustrating a laser device for a laser device according to a first embodi- ment of the present invention.
FIG. 5
FIG. 6
FIG. 7
FIGS. 7 through 8 are simplified diagrams illustrating a laser device for a laser device according to a second embodi- ment of the present invention.
FIG. 8
FIGS. 8 through 9: an n-GaN cladding layer with a thickness from 100 nm to 5000 nm with Si doping level of 5E₁₇ cm⁻³ to 3E₁₈ cm⁻³; an n-side SCH layer …
FIG. 9
FIGS. 9 through 10 are simplified diagrams illustrating a laser device for a laser device according to a third embodi- ment of the present invention.
FIG. 10
FIG. 11
FIGS. 11 through 13 are simplified diagrams illustrating a laser device for a laser device according to a fourth embodiment of the present invention.
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 12 dependent
1
IndependentGaNInGaNInGaNn-type gallium and nitrogen containing region (Si-doped)p-type gallium and nitrogen containing region (Mg-doped)GaN-based laser diode (Claim 1)
An optical device comprising: a gallium and nitrogen containing surface region; an n-type gallium and nitrogen containing region overly-ing the gallium and nitrogen containing surface region comprising a silicon entity; an n-side SCH layer comprising InGaN overlying the n-type gallium and nitrogen containing region; an active region overlying the n-side SCH layer, the active region comprising at least one quantum well having InGaN; 5 a laser stripe region formed overlying the active region, the laser stripe region characterized by a cavity orien-tation substantially parallel to a first-direction, the laser stripe region having a first end and a second end, the laser stripe region comprising a p-type gallium and nitrogen containing region comprising a magnesium entity; a dielectric layer overlying the laser stripe region and exposing an upper portion of the laser stripe region; a p-type metal region overlying the upper portion of the laser stripe region; a first facet provided on the first end of the laser stripe region; and a second facet provided on the second end of the laser stripe region, wherein the first facet is substantially parallel with the second facet, wherein one of the first facet or the second facet is configured to emit light characterized by a wavelength ranging from between 390 nm to 530 nm.
2
Dependent← claim 1GaN-based laser diode (Claim 1)
The optical device of claim 1, wherein the first facet comprises a first mirror surface.
4
Dependent← claim 1GaN-based laser diode (Claim 1)
The optical device of claim 1 wherein the active region includes one or more barrier layers.
5
Dependent← claim 1aluminum-containing electron blocking layerGaN-based laser diode (Claim 1)
The optical device of claim 1, further comprising an electron blocking layer comprising aluminum disposed between the active region and the p-type gallium and nitrogen containing region.
6
Dependent← claim 1GaN-based laser diode (Claim 1)
The optical device of claim 1 further comprising a spontaneously emitted light characterized by a wavelength ranging 390 nm to 420 nm, 420 nm to 440 nm, 440 nm to 470 nm, 470 nm to 490 nm, 490 nm to 510 nm, and 510 nm to 530 nm.
The optical device of claim 1 wherein the p-type metal region comprises gallium nitride comprising magnesium entities.
8
IndependentGaNInGaNInGaNAlGaN:Mgp-type gallium and nitrogen containing cladding layer (Mg-doped)p++ gallium and nitrogen containing contact layer (Mg-doped)GaN-based multiple quantum well laser diode (Claim 8)
An optical device comprising: a gallium and nitrogen containing surface region; an n-type gallium and nitrogen containing cladding layer overlying the gallium and nitrogen containing surface region; an n-side SCH layer overlying the n-type gallium and nitrogen containing cladding layer, the n-side SCH layer comprised of InGaN; 50 a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprised of InGaN quantum wells separated by gallium and nitrogen containing barriers; an electron blocking layer overlying the multiple quantum well active region, the electron blocking layer com-prised of AlGaN doped with magnesium; a p-type gallium and nitrogen containing cladding layer overlying the electronic blocking layer, the p-type gallium and nitrogen containing cladding layer having a magnesium doping; a p++—type gallium and nitrogen containing contact layer with a magnesium doping; a laser stripe region having a first end and a second end; a first facet provided on the first end of the laser stripe region, the first facet configured to emit light charac-terized by a wavelength ranging from between 390 nm to 420 nm, 420 nm to 440 nm, 440 nm to 470 nm, 470 nm to 490 nm, 490 nm to 510 nm, and 510 nm to 530 nm; and a second facet provided on the second end of the laser stripe region.
9
Dependent← claim 8GaN-based multiple quantum well laser diode (Claim 8)
The optical device of claim 8 wherein the n-type gallium and nitrogen containing cladding layer comprises a silicon doping.
10
Dependent← claim 8GaN-based multiple quantum well laser diode (Claim 8)
The optical device of claim 8 wherein the laser stripe region comprises an overlying dielectric layer exposing an upper portion of the laser stripe region.
11
IndependentGaNSiO₂HfO₂TiO₂Ta₂O₅ZrO₂GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
An optical device comprising: a gallium and nitrogen containing surface region; an n-type gallium and nitrogen containing region overly-ing the surface region; an active region overlying the n-type gallium and nitrogen containing region; at least one quantum well region configured within the active region; and a laser stripe region overlying a portion of the gallium and nitrogen containing surface region, the laser stripe region being characterized by a cavity orientation substantially parallel to the c-direction, the laser stripe region having a first end and a second end, the laser stripe region having a length of less than about 3000 microns and a width of less than about 50 microns, wherein the first end comprises a first mirror surface having an anti-reflective coating and is configured to emit light characterized by a wavelength ranging from about 390 nm to about 420 nm or from about 420 nm to about 440 nm, and the second end of the laser stripe region comprises a second mirror surface having a reflective coating selected from silicon dioxide, hafnia, titania, tantalum pentoxide, zirconia, or aluminum oxide.
12
Dependent← claim 11GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 wherein the first end of the laser stripe region includes a first cleaved facet and the second end of the laser stripe region includes a second cleaved facet.
13
Dependent← claim 11GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 further comprising an electron blocking layer overlying the active region.
14
Dependent← claim 11InGaNGaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 further comprising an n-side SCH layer overlying the n-type gallium and nitrogen containing region.
15
Dependent← claim 11GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 further comprising a p-side SCH layer overlying the active region. ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
p-type gallium and nitrogen containing region (Mg-doped)p-type laser stripe region
InGaNactive region quantum well
InGaNn-side SCH layer
n-type gallium and nitrogen containing region (Si-doped)
Materials
Materials described outside the worked examples.
gallium and nitrogen containing surface region/substrate
GaN
Substrate
InGaN (n-side SCH layer)
InGaN
N-Side Separate Confinement Heterostructure Layer
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
thickness
Thickness
FIGS. 8 through 9: an n-GaN cladding layer with a thickness from 100 nm to 5000 nm with Si doping level of 5E₁₇ cm⁻³ to 3E₁₈ cm⁻³; an n-side SCH layer …
OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES AND GROWTH STRUCTURES FOR LASER APPLICATIONS
James W. Raring
KYOCERA SLD Laser, Inc., Goleta, CA (US)·Jan. 2, 2024·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1A is a simplified perspective view of a laser device fabricated on a semipolar substrate according to an embodi- ment of the present invention.
FIG. 2
FIG. 2 is a detailed cross-sectional view of a laser device fabricated on a non-polar substrate according to an embodi- ment of the present invention.
FIG. 3
FIG. 3 is a simplified diagram illustrating an epitaxial laser structure according to a preferred embodiment of the present invention.
FIG. 4
FIGS. 4 through 6 are simplified diagrams illustrating a laser device for a laser device according to a first embodi- ment of the present invention.
FIG. 5
FIG. 6
FIG. 7
FIGS. 7 through 8 are simplified diagrams illustrating a laser device for a laser device according to a second embodi- ment of the present invention.
FIG. 8
FIGS. 8 through 9: an n-GaN cladding layer with a thickness from 100 nm to 5000 nm with Si doping level of 5E₁₇ cm⁻³ to 3E₁₈ cm⁻³; an n-side SCH layer …
FIG. 9
FIGS. 9 through 10 are simplified diagrams illustrating a laser device for a laser device according to a third embodi- ment of the present invention.
FIG. 10
FIG. 11
FIGS. 11 through 13 are simplified diagrams illustrating a laser device for a laser device according to a fourth embodiment of the present invention.
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 12 dependent
1
IndependentGaNInGaNInGaNn-type gallium and nitrogen containing region (Si-doped)p-type gallium and nitrogen containing region (Mg-doped)GaN-based laser diode (Claim 1)
An optical device comprising: a gallium and nitrogen containing surface region; an n-type gallium and nitrogen containing region overly-ing the gallium and nitrogen containing surface region comprising a silicon entity; an n-side SCH layer comprising InGaN overlying the n-type gallium and nitrogen containing region; an active region overlying the n-side SCH layer, the active region comprising at least one quantum well having InGaN; 5 a laser stripe region formed overlying the active region, the laser stripe region characterized by a cavity orien-tation substantially parallel to a first-direction, the laser stripe region having a first end and a second end, the laser stripe region comprising a p-type gallium and nitrogen containing region comprising a magnesium entity; a dielectric layer overlying the laser stripe region and exposing an upper portion of the laser stripe region; a p-type metal region overlying the upper portion of the laser stripe region; a first facet provided on the first end of the laser stripe region; and a second facet provided on the second end of the laser stripe region, wherein the first facet is substantially parallel with the second facet, wherein one of the first facet or the second facet is configured to emit light characterized by a wavelength ranging from between 390 nm to 530 nm.
2
Dependent← claim 1GaN-based laser diode (Claim 1)
The optical device of claim 1, wherein the first facet comprises a first mirror surface.
4
Dependent← claim 1GaN-based laser diode (Claim 1)
The optical device of claim 1 wherein the active region includes one or more barrier layers.
5
Dependent← claim 1aluminum-containing electron blocking layerGaN-based laser diode (Claim 1)
The optical device of claim 1, further comprising an electron blocking layer comprising aluminum disposed between the active region and the p-type gallium and nitrogen containing region.
6
Dependent← claim 1GaN-based laser diode (Claim 1)
The optical device of claim 1 further comprising a spontaneously emitted light characterized by a wavelength ranging 390 nm to 420 nm, 420 nm to 440 nm, 440 nm to 470 nm, 470 nm to 490 nm, 490 nm to 510 nm, and 510 nm to 530 nm.
The optical device of claim 1 wherein the p-type metal region comprises gallium nitride comprising magnesium entities.
8
IndependentGaNInGaNInGaNAlGaN:Mgp-type gallium and nitrogen containing cladding layer (Mg-doped)p++ gallium and nitrogen containing contact layer (Mg-doped)GaN-based multiple quantum well laser diode (Claim 8)
An optical device comprising: a gallium and nitrogen containing surface region; an n-type gallium and nitrogen containing cladding layer overlying the gallium and nitrogen containing surface region; an n-side SCH layer overlying the n-type gallium and nitrogen containing cladding layer, the n-side SCH layer comprised of InGaN; 50 a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprised of InGaN quantum wells separated by gallium and nitrogen containing barriers; an electron blocking layer overlying the multiple quantum well active region, the electron blocking layer com-prised of AlGaN doped with magnesium; a p-type gallium and nitrogen containing cladding layer overlying the electronic blocking layer, the p-type gallium and nitrogen containing cladding layer having a magnesium doping; a p++—type gallium and nitrogen containing contact layer with a magnesium doping; a laser stripe region having a first end and a second end; a first facet provided on the first end of the laser stripe region, the first facet configured to emit light charac-terized by a wavelength ranging from between 390 nm to 420 nm, 420 nm to 440 nm, 440 nm to 470 nm, 470 nm to 490 nm, 490 nm to 510 nm, and 510 nm to 530 nm; and a second facet provided on the second end of the laser stripe region.
9
Dependent← claim 8GaN-based multiple quantum well laser diode (Claim 8)
The optical device of claim 8 wherein the n-type gallium and nitrogen containing cladding layer comprises a silicon doping.
10
Dependent← claim 8GaN-based multiple quantum well laser diode (Claim 8)
The optical device of claim 8 wherein the laser stripe region comprises an overlying dielectric layer exposing an upper portion of the laser stripe region.
11
IndependentGaNSiO₂HfO₂TiO₂Ta₂O₅ZrO₂GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
An optical device comprising: a gallium and nitrogen containing surface region; an n-type gallium and nitrogen containing region overly-ing the surface region; an active region overlying the n-type gallium and nitrogen containing region; at least one quantum well region configured within the active region; and a laser stripe region overlying a portion of the gallium and nitrogen containing surface region, the laser stripe region being characterized by a cavity orientation substantially parallel to the c-direction, the laser stripe region having a first end and a second end, the laser stripe region having a length of less than about 3000 microns and a width of less than about 50 microns, wherein the first end comprises a first mirror surface having an anti-reflective coating and is configured to emit light characterized by a wavelength ranging from about 390 nm to about 420 nm or from about 420 nm to about 440 nm, and the second end of the laser stripe region comprises a second mirror surface having a reflective coating selected from silicon dioxide, hafnia, titania, tantalum pentoxide, zirconia, or aluminum oxide.
12
Dependent← claim 11GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 wherein the first end of the laser stripe region includes a first cleaved facet and the second end of the laser stripe region includes a second cleaved facet.
13
Dependent← claim 11GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 further comprising an electron blocking layer overlying the active region.
14
Dependent← claim 11InGaNGaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 further comprising an n-side SCH layer overlying the n-type gallium and nitrogen containing region.
15
Dependent← claim 11GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 further comprising a p-side SCH layer overlying the active region. ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
p-type gallium and nitrogen containing region (Mg-doped)p-type laser stripe region
InGaNactive region quantum well
InGaNn-side SCH layer
n-type gallium and nitrogen containing region (Si-doped)
Materials
Materials described outside the worked examples.
gallium and nitrogen containing surface region/substrate
GaN
Substrate
InGaN (n-side SCH layer)
InGaN
N-Side Separate Confinement Heterostructure Layer
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
thickness
Thickness
FIGS. 8 through 9: an n-GaN cladding layer with a thickness from 100 nm to 5000 nm with Si doping level of 5E₁₇ cm⁻³ to 3E₁₈ cm⁻³; an n-side SCH layer …
OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES AND GROWTH STRUCTURES FOR LASER APPLICATIONS
James W. Raring
KYOCERA SLD Laser, Inc., Goleta, CA (US)·Jan. 2, 2024·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1A is a simplified perspective view of a laser device fabricated on a semipolar substrate according to an embodi- ment of the present invention.
FIG. 2
FIG. 2 is a detailed cross-sectional view of a laser device fabricated on a non-polar substrate according to an embodi- ment of the present invention.
FIG. 3
FIG. 3 is a simplified diagram illustrating an epitaxial laser structure according to a preferred embodiment of the present invention.
FIG. 4
FIGS. 4 through 6 are simplified diagrams illustrating a laser device for a laser device according to a first embodi- ment of the present invention.
FIG. 5
FIG. 6
FIG. 7
FIGS. 7 through 8 are simplified diagrams illustrating a laser device for a laser device according to a second embodi- ment of the present invention.
FIG. 8
FIGS. 8 through 9: an n-GaN cladding layer with a thickness from 100 nm to 5000 nm with Si doping level of 5E₁₇ cm⁻³ to 3E₁₈ cm⁻³; an n-side SCH layer …
FIG. 9
FIGS. 9 through 10 are simplified diagrams illustrating a laser device for a laser device according to a third embodi- ment of the present invention.
FIG. 10
FIG. 11
FIGS. 11 through 13 are simplified diagrams illustrating a laser device for a laser device according to a fourth embodiment of the present invention.
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 12 dependent
1
IndependentGaNInGaNInGaNn-type gallium and nitrogen containing region (Si-doped)p-type gallium and nitrogen containing region (Mg-doped)GaN-based laser diode (Claim 1)
An optical device comprising: a gallium and nitrogen containing surface region; an n-type gallium and nitrogen containing region overly-ing the gallium and nitrogen containing surface region comprising a silicon entity; an n-side SCH layer comprising InGaN overlying the n-type gallium and nitrogen containing region; an active region overlying the n-side SCH layer, the active region comprising at least one quantum well having InGaN; 5 a laser stripe region formed overlying the active region, the laser stripe region characterized by a cavity orien-tation substantially parallel to a first-direction, the laser stripe region having a first end and a second end, the laser stripe region comprising a p-type gallium and nitrogen containing region comprising a magnesium entity; a dielectric layer overlying the laser stripe region and exposing an upper portion of the laser stripe region; a p-type metal region overlying the upper portion of the laser stripe region; a first facet provided on the first end of the laser stripe region; and a second facet provided on the second end of the laser stripe region, wherein the first facet is substantially parallel with the second facet, wherein one of the first facet or the second facet is configured to emit light characterized by a wavelength ranging from between 390 nm to 530 nm.
2
Dependent← claim 1GaN-based laser diode (Claim 1)
The optical device of claim 1, wherein the first facet comprises a first mirror surface.
4
Dependent← claim 1GaN-based laser diode (Claim 1)
The optical device of claim 1 wherein the active region includes one or more barrier layers.
5
Dependent← claim 1aluminum-containing electron blocking layerGaN-based laser diode (Claim 1)
The optical device of claim 1, further comprising an electron blocking layer comprising aluminum disposed between the active region and the p-type gallium and nitrogen containing region.
6
Dependent← claim 1GaN-based laser diode (Claim 1)
The optical device of claim 1 further comprising a spontaneously emitted light characterized by a wavelength ranging 390 nm to 420 nm, 420 nm to 440 nm, 440 nm to 470 nm, 470 nm to 490 nm, 490 nm to 510 nm, and 510 nm to 530 nm.
The optical device of claim 1 wherein the p-type metal region comprises gallium nitride comprising magnesium entities.
8
IndependentGaNInGaNInGaNAlGaN:Mgp-type gallium and nitrogen containing cladding layer (Mg-doped)p++ gallium and nitrogen containing contact layer (Mg-doped)GaN-based multiple quantum well laser diode (Claim 8)
An optical device comprising: a gallium and nitrogen containing surface region; an n-type gallium and nitrogen containing cladding layer overlying the gallium and nitrogen containing surface region; an n-side SCH layer overlying the n-type gallium and nitrogen containing cladding layer, the n-side SCH layer comprised of InGaN; 50 a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprised of InGaN quantum wells separated by gallium and nitrogen containing barriers; an electron blocking layer overlying the multiple quantum well active region, the electron blocking layer com-prised of AlGaN doped with magnesium; a p-type gallium and nitrogen containing cladding layer overlying the electronic blocking layer, the p-type gallium and nitrogen containing cladding layer having a magnesium doping; a p++—type gallium and nitrogen containing contact layer with a magnesium doping; a laser stripe region having a first end and a second end; a first facet provided on the first end of the laser stripe region, the first facet configured to emit light charac-terized by a wavelength ranging from between 390 nm to 420 nm, 420 nm to 440 nm, 440 nm to 470 nm, 470 nm to 490 nm, 490 nm to 510 nm, and 510 nm to 530 nm; and a second facet provided on the second end of the laser stripe region.
9
Dependent← claim 8GaN-based multiple quantum well laser diode (Claim 8)
The optical device of claim 8 wherein the n-type gallium and nitrogen containing cladding layer comprises a silicon doping.
10
Dependent← claim 8GaN-based multiple quantum well laser diode (Claim 8)
The optical device of claim 8 wherein the laser stripe region comprises an overlying dielectric layer exposing an upper portion of the laser stripe region.
11
IndependentGaNSiO₂HfO₂TiO₂Ta₂O₅ZrO₂GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
An optical device comprising: a gallium and nitrogen containing surface region; an n-type gallium and nitrogen containing region overly-ing the surface region; an active region overlying the n-type gallium and nitrogen containing region; at least one quantum well region configured within the active region; and a laser stripe region overlying a portion of the gallium and nitrogen containing surface region, the laser stripe region being characterized by a cavity orientation substantially parallel to the c-direction, the laser stripe region having a first end and a second end, the laser stripe region having a length of less than about 3000 microns and a width of less than about 50 microns, wherein the first end comprises a first mirror surface having an anti-reflective coating and is configured to emit light characterized by a wavelength ranging from about 390 nm to about 420 nm or from about 420 nm to about 440 nm, and the second end of the laser stripe region comprises a second mirror surface having a reflective coating selected from silicon dioxide, hafnia, titania, tantalum pentoxide, zirconia, or aluminum oxide.
12
Dependent← claim 11GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 wherein the first end of the laser stripe region includes a first cleaved facet and the second end of the laser stripe region includes a second cleaved facet.
13
Dependent← claim 11GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 further comprising an electron blocking layer overlying the active region.
14
Dependent← claim 11InGaNGaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 further comprising an n-side SCH layer overlying the n-type gallium and nitrogen containing region.
15
Dependent← claim 11GaN-based laser diode with c-direction cavity and facet coatings (Claim 11)
The optical device of claim 11 further comprising a p-side SCH layer overlying the active region. ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
p-type gallium and nitrogen containing region (Mg-doped)p-type laser stripe region
InGaNactive region quantum well
InGaNn-side SCH layer
n-type gallium and nitrogen containing region (Si-doped)
Materials
Materials described outside the worked examples.
gallium and nitrogen containing surface region/substrate
GaN
Substrate
InGaN (n-side SCH layer)
InGaN
N-Side Separate Confinement Heterostructure Layer
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
thickness
Thickness
FIGS. 8 through 9: an n-GaN cladding layer with a thickness from 100 nm to 5000 nm with Si doping level of 5E₁₇ cm⁻³ to 3E₁₈ cm⁻³; an n-side SCH layer …
U.S. Appl. No. 16/799,217 Notice of Allowance dated Aug. 13, 2020, 9 pages.
Abare et al., Cleaved and Etched Facet Nitride Laser Diodes, IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, No. 3, May 1998, pp. 505-509.
Aoki et al., InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD, IEEE Journal of Quantum Elec- tronics, vol. 29, No. 6, Jun. 1993, pp. 2088-2096.
Asano et al., 100-mW Kink-Free Blue-Violet Laser Diodes with Low Aspect Ratio, IEEE Journal of Quantum Electronics, vol. 39, No. 1, Jan. 2003, pp. 135-140.
Bernardini et al., Spontaneous Polarization and Piezoelectric Con- stants of III-V Nitrides, Physical Review B, vol. 56, No. 16, Oct. 15, 1997, pp. 10024-10027.
Caneau et al., Studies on the Selective OMVPE of (Ga, In)/(As,P), Journal of Crystal Growth, vol. 124, No. 1, Nov. 1, 1992, pp. 243-248.
Chen et al., Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures, Advanced Materials, vol. 19, Jun. 5, 2007, pp. 1707-1710.
D’Evelyn et al., Bulk GaN Crystal Growth by the High-Pressure Ammonothermal Method, Journal of Crystal Growth, vol. 300, Issue 1, Mar. 1, 2007, pp. 11-16.
Feezell et al., Short-Wave Diode Lasers: Nonpolar gallium nitride laser diodes are the next new blue, Laser Focus World, vol. 43, Issue 10, Oct. 1, 2007, 16 pages, downloaded on May 28, 2020 at https://www.laserfocusworld.com/test-measurement/research/article/16552850/shortwave-diode-lasers-nonpolar-gallium-nitride-laser- diodes-are-the-next-new-blue.
Feezell et al., Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes, MRS Bulletin, vol. 34, May 2009, pp. 318-323.
Founta et al., Anisotropic Morphology of Nonpolar a-Plan GaN Quantum Dots and Quantum Wells, Journal of Applied Physics, vol. 102, No. 7, 2007, pp. 074304-1-074304-6.
Franssila, Tools for CVD and Epitaxy, Introduction to Microfabrica- tion, 2004, pp. 329-336.
Fujii et al., Increase in the Extraction Efficiency of GaN-Based Light-Emitting Diodes via surface Roughening, Applied Physics Letters, vol. 84, No. 6, 2004, pp. 855-857.
Funato et al., Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates, Journal of Japanese Applied Physics, vol. 45, No. 26, 2006, pp. L659-L662.
Funato et al., Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting, Applied Physics Express, vol. 1, No. 1, 2008, pp. 011106-1-011106-3.
Gardner et al., Blue-Emitting InGaN—GaN Double-Heterostructure Light-Emitting Diodes Reaching Maximum Quantum Efficiency Above 200A/cm2, Applied Physics Letters, vol. 91, Dec. 12, 2007, pp. 243506-1-243506-3.
Hiramatsu et al., Selective Area Growth and Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy and Hydride Vapor Phase Epitaxy, Materials Science and Engineering B, vol. 59, May 6, 1999, pp. 104-111.
Iso et al., High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-Plane Bulk GaN Substrate, Japanese Journal of Applied Physics, vol. 46, No. 40, 2007, pp. L960-L962.
Kendall et al., Energy Savings Potential of Solid State Lighting in General LightingApplications, Report for the Department of Energy, 2001, 35 pages.
Khan et al., Cleaved Cavity Optically Pumped InGaN—GaN Laser Grown on Spinel Substrates, Applied Physics Letters, vol. 69, Issue 16, Oct. 14, 1996, pp. 2418-2420.
Kim et al., Improved Electroluminescence on Nonpolar m-Plane InGaN/GaN Quantum Wells LEDs, Physica Status Solidi (RRL), vol. 1, No. 3, 2007, pp. 125-127.
Kuramoto et al., Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN
Substrates, Journal of Japanese Applied Physics, vol. 40, 2001, pp. L925-L927.
Lin et al., Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells, Japanese Journal of Applied Physics, vol. 43, No. 10, 2004, pp. 7032-7035.
Masui et al., Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature, Japanese Journal of Applied Physics, vol. 46, Part 1, No. 11, 2007, pp. 7309-7310.
Michiue et al., Recent development of nitride LEDs and LDs, Proceedings of SPIE, vol. 7216, 2009, pp. 72161Z-1-72161Z-6.
Nakamura et al., InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices Grown on an Epitaxi- ally Laterally Overgrown GaN Substrate, Applied Physics Letters, vol. 72, No. 12, 1998, pp. 211-213.
Nam et al., Lateral Epitaxial Overgrowth of GaN Films on SiO2 Areas via Metalorganic Vapor Phase Epitaxy, Journal of Electronic Materials, vol. 27, No. 4, Apr. 1998, pp. 233-237.
Okamoto et al., Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes, The Japan Society of Applied Physics Express Letter, vol. 46, No. 9, 2007, pp. L187-L189.
Okamoto et al., High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium
Nitride, The Japan Society of Applied Physics, Applied Physics Express 1, Jun. 20, 2008, pp. 072201-1-072201-3.
Okamoto et al., Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers, Journal of Japa- nese Applied Physics, vol. 46, No. 35, 2007, pp. L820-L822.
Park, Crystal Orientation Effects on Electronic Properties of Wurtzite InGaN/GaN Quantum Wells, Journal of Applied Physics, vol. 91, No. 12, Jun. 15, 2002, pp. 9904-9908. International Application No. PCT/US2009/046786, International Search Report and Written Opinion dated May 13, 2010, 8 pages. International Application No. PCT/US2009/047107, International Search Report and Written Opinion dated Sep. 29, 2009, 10 pages. International Application No. PCT/US2009/052611, International Search Report and Written Opinion dated Sep. 29, 2009, 11 pages. International Application No. PCT/US2010/030939, International Search Report and Written Opinion dated Jun. 16, 2010, 9 pages. International Application No. PCT/US2010/049172, International Search Report and Written Opinion dated Nov. 17, 2010, 7 pages. International Application No. PCT/US2011/037792, International Search Report and Written Opinion dated Sep. 8, 2011, 9 pages. International Application No. PCT/US2011/060030, International Search Report and Written Opinion dated Mar. 21, 2012, 8 pages. Purvis, Changing the Crystal Face of Gallium Nitride, The Advance Semiconductor Magazine, III-Vs Review, vol. 18, No. 8, Nov. 8, 2005, 3 pages.
Romanov et al., Strain-Induced Polarization in Wurtzite III-Nitride Semipolar Layers, J. Appl. Phys., vol. 100, Jul. 25, 2006, p. 023522-1- 023522-10.
Sato et al., High Power and High Efficiency Green Light Emitting Diode on Free-Standing Semipolar (1122) Bulk GaN Substrate, Physica Status Sol. (RRL), vol. 1, Jun. 15, 2007, pp. 162-164.
Sato et al., Optical Properties of Yellow Light-Emitting-Diodes Grown on Semipolar (1122) Bulk GaN Substrate, Applied Physics Letter, vol. 92, No. 22, 2008, pp. 221110-1-221110-3.
Schmidt et al., Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes, Japanese Journal of Applied Physics, vol. 46 Part 2, 2007, pp. 190-191.
Schmidt et al., High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes, Japanese Journal of Applied Physics, vol. 46, No. 7, Feb. 9, 2007, pp. L126-L128.
Schoedl et al., Facet degradation of GaN Heterostructure laser diodes, Journal of Applied Physics, vol. 97, No. 12, 2005, pp. 123102-1-123102-8.
Shchekin et al., High Performance Thin-Film Flip-Chip InGaN— GaN Light-Emitting Diodes, Applied Physics Letters, vol. 89, Aug. 16, 2006, pp. 071109-1-071109-3.
Shen et al., Auger Recombination in InGaN Measured by
Sizov et al., 500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells, Applied Physics Express, vol. 2, Jun. 19, 2009, pp. 071001-1-071001-3.
Tomiya et al., Dislocation Related Issues in the Degradation of GaN-Based Laser Diodes, IEEE Journal of Selected Topics in Quantum Electronics, vol. 10, Issue 6, Nov.-Dec. 2004, pp. 1277- 1286.
Tyagi et al., High Brightness Violet InGan/Gan Light EMitting Diodes on Semipolar (1011) Bulk Gan Substrates, Japanese Journal of Applied Physics, vol. 46, No. 4-7, Feb. 9, 2007, pp. L129-L131.
Tyagi et al., Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates, Japanese Journal of Applied Physics, vol. 46, No. 19, Part 2, May 11, 2007, pp. L444-L445.
Uchida et al., Recent Progress in High-Power Blue-Violet Lasers, IEEE Journal of Selected Topics in Quantum Electronics, vol. 9, Issue 5, Sep.-Oct. 2003, pp. 1252-1259.
Waltereit et al., Nitride Semiconductors Free of Electrostatic Fields for Efficient White Light-Emitting Diodes, Nature, vol. 406, Aug. 24, 2000, pp. 865-868.
Wierer et al., High-powerAlGaInN Flip-Chip Light-Emitting Diodes, Applied Physics Letters, vol. 78, No. 22, 2001, pp. 3379-3381.
Yamaguchi, Anisotropic Optical Matrix Elements in Strained GaN- Quantum Wells with Various substrate Orientations, Physica Status Solidi (PSS), vol. 5, No. 6, May 2008, pp. 2329-2332.
Yoshizumi et al., Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates, Applied Physics Express, vol. 2, No. 9, Aug. 2009, pp. 1-3.
Yu et al., Multiple Wavelength Emission from Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD, Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Sci- ence Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD), 2007, 2 pages.
Zhong et al., Demonstration of High Power Blue-Green Light Emitting Diode on Semipolar (1122) bulk GaN substrate, Electron- ics Letters, vol. 43, No. 15, Jul. 2007, pp. 825-826.
High power and high efficiency blue light emitting diode on freestanding semipolar (1011) bulk GaN substrate. Zhong et al., “High power and high efficiency blue light emitting diode on freestanding semipolar (1011) bulk GaN substrate,”Applied Physics Letters, vol. 90, downloaded Apr. 19, 2010, 3 pages.
U.S. Appl. No. 16/799,217 Notice of Allowance dated Aug. 13, 2020, 9 pages.
Abare et al., Cleaved and Etched Facet Nitride Laser Diodes, IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, No. 3, May 1998, pp. 505-509.
Aoki et al., InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD, IEEE Journal of Quantum Elec- tronics, vol. 29, No. 6, Jun. 1993, pp. 2088-2096.
Asano et al., 100-mW Kink-Free Blue-Violet Laser Diodes with Low Aspect Ratio, IEEE Journal of Quantum Electronics, vol. 39, No. 1, Jan. 2003, pp. 135-140.
Bernardini et al., Spontaneous Polarization and Piezoelectric Con- stants of III-V Nitrides, Physical Review B, vol. 56, No. 16, Oct. 15, 1997, pp. 10024-10027.
Caneau et al., Studies on the Selective OMVPE of (Ga, In)/(As,P), Journal of Crystal Growth, vol. 124, No. 1, Nov. 1, 1992, pp. 243-248.
Chen et al., Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures, Advanced Materials, vol. 19, Jun. 5, 2007, pp. 1707-1710.
D’Evelyn et al., Bulk GaN Crystal Growth by the High-Pressure Ammonothermal Method, Journal of Crystal Growth, vol. 300, Issue 1, Mar. 1, 2007, pp. 11-16.
Feezell et al., Short-Wave Diode Lasers: Nonpolar gallium nitride laser diodes are the next new blue, Laser Focus World, vol. 43, Issue 10, Oct. 1, 2007, 16 pages, downloaded on May 28, 2020 at https://www.laserfocusworld.com/test-measurement/research/article/16552850/shortwave-diode-lasers-nonpolar-gallium-nitride-laser- diodes-are-the-next-new-blue.
Feezell et al., Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes, MRS Bulletin, vol. 34, May 2009, pp. 318-323.
Founta et al., Anisotropic Morphology of Nonpolar a-Plan GaN Quantum Dots and Quantum Wells, Journal of Applied Physics, vol. 102, No. 7, 2007, pp. 074304-1-074304-6.
Franssila, Tools for CVD and Epitaxy, Introduction to Microfabrica- tion, 2004, pp. 329-336.
Fujii et al., Increase in the Extraction Efficiency of GaN-Based Light-Emitting Diodes via surface Roughening, Applied Physics Letters, vol. 84, No. 6, 2004, pp. 855-857.
Funato et al., Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates, Journal of Japanese Applied Physics, vol. 45, No. 26, 2006, pp. L659-L662.
Funato et al., Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting, Applied Physics Express, vol. 1, No. 1, 2008, pp. 011106-1-011106-3.
Gardner et al., Blue-Emitting InGaN—GaN Double-Heterostructure Light-Emitting Diodes Reaching Maximum Quantum Efficiency Above 200A/cm2, Applied Physics Letters, vol. 91, Dec. 12, 2007, pp. 243506-1-243506-3.
Hiramatsu et al., Selective Area Growth and Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy and Hydride Vapor Phase Epitaxy, Materials Science and Engineering B, vol. 59, May 6, 1999, pp. 104-111.
Iso et al., High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-Plane Bulk GaN Substrate, Japanese Journal of Applied Physics, vol. 46, No. 40, 2007, pp. L960-L962.
Kendall et al., Energy Savings Potential of Solid State Lighting in General LightingApplications, Report for the Department of Energy, 2001, 35 pages.
Khan et al., Cleaved Cavity Optically Pumped InGaN—GaN Laser Grown on Spinel Substrates, Applied Physics Letters, vol. 69, Issue 16, Oct. 14, 1996, pp. 2418-2420.
Kim et al., Improved Electroluminescence on Nonpolar m-Plane InGaN/GaN Quantum Wells LEDs, Physica Status Solidi (RRL), vol. 1, No. 3, 2007, pp. 125-127.
Kuramoto et al., Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN
Substrates, Journal of Japanese Applied Physics, vol. 40, 2001, pp. L925-L927.
Lin et al., Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells, Japanese Journal of Applied Physics, vol. 43, No. 10, 2004, pp. 7032-7035.
Masui et al., Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature, Japanese Journal of Applied Physics, vol. 46, Part 1, No. 11, 2007, pp. 7309-7310.
Michiue et al., Recent development of nitride LEDs and LDs, Proceedings of SPIE, vol. 7216, 2009, pp. 72161Z-1-72161Z-6.
Nakamura et al., InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices Grown on an Epitaxi- ally Laterally Overgrown GaN Substrate, Applied Physics Letters, vol. 72, No. 12, 1998, pp. 211-213.
Nam et al., Lateral Epitaxial Overgrowth of GaN Films on SiO2 Areas via Metalorganic Vapor Phase Epitaxy, Journal of Electronic Materials, vol. 27, No. 4, Apr. 1998, pp. 233-237.
Okamoto et al., Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes, The Japan Society of Applied Physics Express Letter, vol. 46, No. 9, 2007, pp. L187-L189.
Okamoto et al., High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium
Nitride, The Japan Society of Applied Physics, Applied Physics Express 1, Jun. 20, 2008, pp. 072201-1-072201-3.
Okamoto et al., Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers, Journal of Japa- nese Applied Physics, vol. 46, No. 35, 2007, pp. L820-L822.
Park, Crystal Orientation Effects on Electronic Properties of Wurtzite InGaN/GaN Quantum Wells, Journal of Applied Physics, vol. 91, No. 12, Jun. 15, 2002, pp. 9904-9908. International Application No. PCT/US2009/046786, International Search Report and Written Opinion dated May 13, 2010, 8 pages. International Application No. PCT/US2009/047107, International Search Report and Written Opinion dated Sep. 29, 2009, 10 pages. International Application No. PCT/US2009/052611, International Search Report and Written Opinion dated Sep. 29, 2009, 11 pages. International Application No. PCT/US2010/030939, International Search Report and Written Opinion dated Jun. 16, 2010, 9 pages. International Application No. PCT/US2010/049172, International Search Report and Written Opinion dated Nov. 17, 2010, 7 pages. International Application No. PCT/US2011/037792, International Search Report and Written Opinion dated Sep. 8, 2011, 9 pages. International Application No. PCT/US2011/060030, International Search Report and Written Opinion dated Mar. 21, 2012, 8 pages. Purvis, Changing the Crystal Face of Gallium Nitride, The Advance Semiconductor Magazine, III-Vs Review, vol. 18, No. 8, Nov. 8, 2005, 3 pages.
Romanov et al., Strain-Induced Polarization in Wurtzite III-Nitride Semipolar Layers, J. Appl. Phys., vol. 100, Jul. 25, 2006, p. 023522-1- 023522-10.
Sato et al., High Power and High Efficiency Green Light Emitting Diode on Free-Standing Semipolar (1122) Bulk GaN Substrate, Physica Status Sol. (RRL), vol. 1, Jun. 15, 2007, pp. 162-164.
Sato et al., Optical Properties of Yellow Light-Emitting-Diodes Grown on Semipolar (1122) Bulk GaN Substrate, Applied Physics Letter, vol. 92, No. 22, 2008, pp. 221110-1-221110-3.
Schmidt et al., Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes, Japanese Journal of Applied Physics, vol. 46 Part 2, 2007, pp. 190-191.
Schmidt et al., High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes, Japanese Journal of Applied Physics, vol. 46, No. 7, Feb. 9, 2007, pp. L126-L128.
Schoedl et al., Facet degradation of GaN Heterostructure laser diodes, Journal of Applied Physics, vol. 97, No. 12, 2005, pp. 123102-1-123102-8.
Shchekin et al., High Performance Thin-Film Flip-Chip InGaN— GaN Light-Emitting Diodes, Applied Physics Letters, vol. 89, Aug. 16, 2006, pp. 071109-1-071109-3.
Shen et al., Auger Recombination in InGaN Measured by
Sizov et al., 500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells, Applied Physics Express, vol. 2, Jun. 19, 2009, pp. 071001-1-071001-3.
Tomiya et al., Dislocation Related Issues in the Degradation of GaN-Based Laser Diodes, IEEE Journal of Selected Topics in Quantum Electronics, vol. 10, Issue 6, Nov.-Dec. 2004, pp. 1277- 1286.
Tyagi et al., High Brightness Violet InGan/Gan Light EMitting Diodes on Semipolar (1011) Bulk Gan Substrates, Japanese Journal of Applied Physics, vol. 46, No. 4-7, Feb. 9, 2007, pp. L129-L131.
Tyagi et al., Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates, Japanese Journal of Applied Physics, vol. 46, No. 19, Part 2, May 11, 2007, pp. L444-L445.
Uchida et al., Recent Progress in High-Power Blue-Violet Lasers, IEEE Journal of Selected Topics in Quantum Electronics, vol. 9, Issue 5, Sep.-Oct. 2003, pp. 1252-1259.
Waltereit et al., Nitride Semiconductors Free of Electrostatic Fields for Efficient White Light-Emitting Diodes, Nature, vol. 406, Aug. 24, 2000, pp. 865-868.
Wierer et al., High-powerAlGaInN Flip-Chip Light-Emitting Diodes, Applied Physics Letters, vol. 78, No. 22, 2001, pp. 3379-3381.
Yamaguchi, Anisotropic Optical Matrix Elements in Strained GaN- Quantum Wells with Various substrate Orientations, Physica Status Solidi (PSS), vol. 5, No. 6, May 2008, pp. 2329-2332.
Yoshizumi et al., Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates, Applied Physics Express, vol. 2, No. 9, Aug. 2009, pp. 1-3.
Yu et al., Multiple Wavelength Emission from Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD, Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Sci- ence Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD), 2007, 2 pages.
Zhong et al., Demonstration of High Power Blue-Green Light Emitting Diode on Semipolar (1122) bulk GaN substrate, Electron- ics Letters, vol. 43, No. 15, Jul. 2007, pp. 825-826.
High power and high efficiency blue light emitting diode on freestanding semipolar (1011) bulk GaN substrate. Zhong et al., “High power and high efficiency blue light emitting diode on freestanding semipolar (1011) bulk GaN substrate,”Applied Physics Letters, vol. 90, downloaded Apr. 19, 2010, 3 pages.
U.S. Appl. No. 16/799,217 Notice of Allowance dated Aug. 13, 2020, 9 pages.
Abare et al., Cleaved and Etched Facet Nitride Laser Diodes, IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, No. 3, May 1998, pp. 505-509.
Aoki et al., InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD, IEEE Journal of Quantum Elec- tronics, vol. 29, No. 6, Jun. 1993, pp. 2088-2096.
Asano et al., 100-mW Kink-Free Blue-Violet Laser Diodes with Low Aspect Ratio, IEEE Journal of Quantum Electronics, vol. 39, No. 1, Jan. 2003, pp. 135-140.
Bernardini et al., Spontaneous Polarization and Piezoelectric Con- stants of III-V Nitrides, Physical Review B, vol. 56, No. 16, Oct. 15, 1997, pp. 10024-10027.
Caneau et al., Studies on the Selective OMVPE of (Ga, In)/(As,P), Journal of Crystal Growth, vol. 124, No. 1, Nov. 1, 1992, pp. 243-248.
Chen et al., Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures, Advanced Materials, vol. 19, Jun. 5, 2007, pp. 1707-1710.
D’Evelyn et al., Bulk GaN Crystal Growth by the High-Pressure Ammonothermal Method, Journal of Crystal Growth, vol. 300, Issue 1, Mar. 1, 2007, pp. 11-16.
Feezell et al., Short-Wave Diode Lasers: Nonpolar gallium nitride laser diodes are the next new blue, Laser Focus World, vol. 43, Issue 10, Oct. 1, 2007, 16 pages, downloaded on May 28, 2020 at https://www.laserfocusworld.com/test-measurement/research/article/16552850/shortwave-diode-lasers-nonpolar-gallium-nitride-laser- diodes-are-the-next-new-blue.
Feezell et al., Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes, MRS Bulletin, vol. 34, May 2009, pp. 318-323.
Founta et al., Anisotropic Morphology of Nonpolar a-Plan GaN Quantum Dots and Quantum Wells, Journal of Applied Physics, vol. 102, No. 7, 2007, pp. 074304-1-074304-6.
Franssila, Tools for CVD and Epitaxy, Introduction to Microfabrica- tion, 2004, pp. 329-336.
Fujii et al., Increase in the Extraction Efficiency of GaN-Based Light-Emitting Diodes via surface Roughening, Applied Physics Letters, vol. 84, No. 6, 2004, pp. 855-857.
Funato et al., Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates, Journal of Japanese Applied Physics, vol. 45, No. 26, 2006, pp. L659-L662.
Funato et al., Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting, Applied Physics Express, vol. 1, No. 1, 2008, pp. 011106-1-011106-3.
Gardner et al., Blue-Emitting InGaN—GaN Double-Heterostructure Light-Emitting Diodes Reaching Maximum Quantum Efficiency Above 200A/cm2, Applied Physics Letters, vol. 91, Dec. 12, 2007, pp. 243506-1-243506-3.
Hiramatsu et al., Selective Area Growth and Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy and Hydride Vapor Phase Epitaxy, Materials Science and Engineering B, vol. 59, May 6, 1999, pp. 104-111.
Iso et al., High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-Plane Bulk GaN Substrate, Japanese Journal of Applied Physics, vol. 46, No. 40, 2007, pp. L960-L962.
Kendall et al., Energy Savings Potential of Solid State Lighting in General LightingApplications, Report for the Department of Energy, 2001, 35 pages.
Khan et al., Cleaved Cavity Optically Pumped InGaN—GaN Laser Grown on Spinel Substrates, Applied Physics Letters, vol. 69, Issue 16, Oct. 14, 1996, pp. 2418-2420.
Kim et al., Improved Electroluminescence on Nonpolar m-Plane InGaN/GaN Quantum Wells LEDs, Physica Status Solidi (RRL), vol. 1, No. 3, 2007, pp. 125-127.
Kuramoto et al., Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN
Substrates, Journal of Japanese Applied Physics, vol. 40, 2001, pp. L925-L927.
Lin et al., Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells, Japanese Journal of Applied Physics, vol. 43, No. 10, 2004, pp. 7032-7035.
Masui et al., Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature, Japanese Journal of Applied Physics, vol. 46, Part 1, No. 11, 2007, pp. 7309-7310.
Michiue et al., Recent development of nitride LEDs and LDs, Proceedings of SPIE, vol. 7216, 2009, pp. 72161Z-1-72161Z-6.
Nakamura et al., InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices Grown on an Epitaxi- ally Laterally Overgrown GaN Substrate, Applied Physics Letters, vol. 72, No. 12, 1998, pp. 211-213.
Nam et al., Lateral Epitaxial Overgrowth of GaN Films on SiO2 Areas via Metalorganic Vapor Phase Epitaxy, Journal of Electronic Materials, vol. 27, No. 4, Apr. 1998, pp. 233-237.
Okamoto et al., Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes, The Japan Society of Applied Physics Express Letter, vol. 46, No. 9, 2007, pp. L187-L189.
Okamoto et al., High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium
Nitride, The Japan Society of Applied Physics, Applied Physics Express 1, Jun. 20, 2008, pp. 072201-1-072201-3.
Okamoto et al., Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers, Journal of Japa- nese Applied Physics, vol. 46, No. 35, 2007, pp. L820-L822.
Park, Crystal Orientation Effects on Electronic Properties of Wurtzite InGaN/GaN Quantum Wells, Journal of Applied Physics, vol. 91, No. 12, Jun. 15, 2002, pp. 9904-9908. International Application No. PCT/US2009/046786, International Search Report and Written Opinion dated May 13, 2010, 8 pages. International Application No. PCT/US2009/047107, International Search Report and Written Opinion dated Sep. 29, 2009, 10 pages. International Application No. PCT/US2009/052611, International Search Report and Written Opinion dated Sep. 29, 2009, 11 pages. International Application No. PCT/US2010/030939, International Search Report and Written Opinion dated Jun. 16, 2010, 9 pages. International Application No. PCT/US2010/049172, International Search Report and Written Opinion dated Nov. 17, 2010, 7 pages. International Application No. PCT/US2011/037792, International Search Report and Written Opinion dated Sep. 8, 2011, 9 pages. International Application No. PCT/US2011/060030, International Search Report and Written Opinion dated Mar. 21, 2012, 8 pages. Purvis, Changing the Crystal Face of Gallium Nitride, The Advance Semiconductor Magazine, III-Vs Review, vol. 18, No. 8, Nov. 8, 2005, 3 pages.
Romanov et al., Strain-Induced Polarization in Wurtzite III-Nitride Semipolar Layers, J. Appl. Phys., vol. 100, Jul. 25, 2006, p. 023522-1- 023522-10.
Sato et al., High Power and High Efficiency Green Light Emitting Diode on Free-Standing Semipolar (1122) Bulk GaN Substrate, Physica Status Sol. (RRL), vol. 1, Jun. 15, 2007, pp. 162-164.
Sato et al., Optical Properties of Yellow Light-Emitting-Diodes Grown on Semipolar (1122) Bulk GaN Substrate, Applied Physics Letter, vol. 92, No. 22, 2008, pp. 221110-1-221110-3.
Schmidt et al., Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes, Japanese Journal of Applied Physics, vol. 46 Part 2, 2007, pp. 190-191.
Schmidt et al., High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes, Japanese Journal of Applied Physics, vol. 46, No. 7, Feb. 9, 2007, pp. L126-L128.
Schoedl et al., Facet degradation of GaN Heterostructure laser diodes, Journal of Applied Physics, vol. 97, No. 12, 2005, pp. 123102-1-123102-8.
Shchekin et al., High Performance Thin-Film Flip-Chip InGaN— GaN Light-Emitting Diodes, Applied Physics Letters, vol. 89, Aug. 16, 2006, pp. 071109-1-071109-3.
Shen et al., Auger Recombination in InGaN Measured by
Sizov et al., 500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells, Applied Physics Express, vol. 2, Jun. 19, 2009, pp. 071001-1-071001-3.
Tomiya et al., Dislocation Related Issues in the Degradation of GaN-Based Laser Diodes, IEEE Journal of Selected Topics in Quantum Electronics, vol. 10, Issue 6, Nov.-Dec. 2004, pp. 1277- 1286.
Tyagi et al., High Brightness Violet InGan/Gan Light EMitting Diodes on Semipolar (1011) Bulk Gan Substrates, Japanese Journal of Applied Physics, vol. 46, No. 4-7, Feb. 9, 2007, pp. L129-L131.
Tyagi et al., Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates, Japanese Journal of Applied Physics, vol. 46, No. 19, Part 2, May 11, 2007, pp. L444-L445.
Uchida et al., Recent Progress in High-Power Blue-Violet Lasers, IEEE Journal of Selected Topics in Quantum Electronics, vol. 9, Issue 5, Sep.-Oct. 2003, pp. 1252-1259.
Waltereit et al., Nitride Semiconductors Free of Electrostatic Fields for Efficient White Light-Emitting Diodes, Nature, vol. 406, Aug. 24, 2000, pp. 865-868.
Wierer et al., High-powerAlGaInN Flip-Chip Light-Emitting Diodes, Applied Physics Letters, vol. 78, No. 22, 2001, pp. 3379-3381.
Yamaguchi, Anisotropic Optical Matrix Elements in Strained GaN- Quantum Wells with Various substrate Orientations, Physica Status Solidi (PSS), vol. 5, No. 6, May 2008, pp. 2329-2332.
Yoshizumi et al., Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates, Applied Physics Express, vol. 2, No. 9, Aug. 2009, pp. 1-3.
Yu et al., Multiple Wavelength Emission from Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD, Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Sci- ence Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD), 2007, 2 pages.
Zhong et al., Demonstration of High Power Blue-Green Light Emitting Diode on Semipolar (1122) bulk GaN substrate, Electron- ics Letters, vol. 43, No. 15, Jul. 2007, pp. 825-826.
High power and high efficiency blue light emitting diode on freestanding semipolar (1011) bulk GaN substrate. Zhong et al., “High power and high efficiency blue light emitting diode on freestanding semipolar (1011) bulk GaN substrate,”Applied Physics Letters, vol. 90, downloaded Apr. 19, 2010, 3 pages.
U.S. Appl. No. 16/799,217 Notice of Allowance dated Aug. 13, 2020, 9 pages.
Abare et al., Cleaved and Etched Facet Nitride Laser Diodes, IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, No. 3, May 1998, pp. 505-509.
Aoki et al., InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD, IEEE Journal of Quantum Elec- tronics, vol. 29, No. 6, Jun. 1993, pp. 2088-2096.
Asano et al., 100-mW Kink-Free Blue-Violet Laser Diodes with Low Aspect Ratio, IEEE Journal of Quantum Electronics, vol. 39, No. 1, Jan. 2003, pp. 135-140.
Bernardini et al., Spontaneous Polarization and Piezoelectric Con- stants of III-V Nitrides, Physical Review B, vol. 56, No. 16, Oct. 15, 1997, pp. 10024-10027.
Caneau et al., Studies on the Selective OMVPE of (Ga, In)/(As,P), Journal of Crystal Growth, vol. 124, No. 1, Nov. 1, 1992, pp. 243-248.
Chen et al., Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures, Advanced Materials, vol. 19, Jun. 5, 2007, pp. 1707-1710.
D’Evelyn et al., Bulk GaN Crystal Growth by the High-Pressure Ammonothermal Method, Journal of Crystal Growth, vol. 300, Issue 1, Mar. 1, 2007, pp. 11-16.
Feezell et al., Short-Wave Diode Lasers: Nonpolar gallium nitride laser diodes are the next new blue, Laser Focus World, vol. 43, Issue 10, Oct. 1, 2007, 16 pages, downloaded on May 28, 2020 at https://www.laserfocusworld.com/test-measurement/research/article/16552850/shortwave-diode-lasers-nonpolar-gallium-nitride-laser- diodes-are-the-next-new-blue.
Feezell et al., Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes, MRS Bulletin, vol. 34, May 2009, pp. 318-323.
Founta et al., Anisotropic Morphology of Nonpolar a-Plan GaN Quantum Dots and Quantum Wells, Journal of Applied Physics, vol. 102, No. 7, 2007, pp. 074304-1-074304-6.
Franssila, Tools for CVD and Epitaxy, Introduction to Microfabrica- tion, 2004, pp. 329-336.
Fujii et al., Increase in the Extraction Efficiency of GaN-Based Light-Emitting Diodes via surface Roughening, Applied Physics Letters, vol. 84, No. 6, 2004, pp. 855-857.
Funato et al., Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates, Journal of Japanese Applied Physics, vol. 45, No. 26, 2006, pp. L659-L662.
Funato et al., Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting, Applied Physics Express, vol. 1, No. 1, 2008, pp. 011106-1-011106-3.
Gardner et al., Blue-Emitting InGaN—GaN Double-Heterostructure Light-Emitting Diodes Reaching Maximum Quantum Efficiency Above 200A/cm2, Applied Physics Letters, vol. 91, Dec. 12, 2007, pp. 243506-1-243506-3.
Hiramatsu et al., Selective Area Growth and Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy and Hydride Vapor Phase Epitaxy, Materials Science and Engineering B, vol. 59, May 6, 1999, pp. 104-111.
Iso et al., High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-Plane Bulk GaN Substrate, Japanese Journal of Applied Physics, vol. 46, No. 40, 2007, pp. L960-L962.
Kendall et al., Energy Savings Potential of Solid State Lighting in General LightingApplications, Report for the Department of Energy, 2001, 35 pages.
Khan et al., Cleaved Cavity Optically Pumped InGaN—GaN Laser Grown on Spinel Substrates, Applied Physics Letters, vol. 69, Issue 16, Oct. 14, 1996, pp. 2418-2420.
Kim et al., Improved Electroluminescence on Nonpolar m-Plane InGaN/GaN Quantum Wells LEDs, Physica Status Solidi (RRL), vol. 1, No. 3, 2007, pp. 125-127.
Kuramoto et al., Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN
Substrates, Journal of Japanese Applied Physics, vol. 40, 2001, pp. L925-L927.
Lin et al., Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells, Japanese Journal of Applied Physics, vol. 43, No. 10, 2004, pp. 7032-7035.
Masui et al., Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature, Japanese Journal of Applied Physics, vol. 46, Part 1, No. 11, 2007, pp. 7309-7310.
Michiue et al., Recent development of nitride LEDs and LDs, Proceedings of SPIE, vol. 7216, 2009, pp. 72161Z-1-72161Z-6.
Nakamura et al., InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices Grown on an Epitaxi- ally Laterally Overgrown GaN Substrate, Applied Physics Letters, vol. 72, No. 12, 1998, pp. 211-213.
Nam et al., Lateral Epitaxial Overgrowth of GaN Films on SiO2 Areas via Metalorganic Vapor Phase Epitaxy, Journal of Electronic Materials, vol. 27, No. 4, Apr. 1998, pp. 233-237.
Okamoto et al., Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes, The Japan Society of Applied Physics Express Letter, vol. 46, No. 9, 2007, pp. L187-L189.
Okamoto et al., High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium
Nitride, The Japan Society of Applied Physics, Applied Physics Express 1, Jun. 20, 2008, pp. 072201-1-072201-3.
Okamoto et al., Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers, Journal of Japa- nese Applied Physics, vol. 46, No. 35, 2007, pp. L820-L822.
Park, Crystal Orientation Effects on Electronic Properties of Wurtzite InGaN/GaN Quantum Wells, Journal of Applied Physics, vol. 91, No. 12, Jun. 15, 2002, pp. 9904-9908. International Application No. PCT/US2009/046786, International Search Report and Written Opinion dated May 13, 2010, 8 pages. International Application No. PCT/US2009/047107, International Search Report and Written Opinion dated Sep. 29, 2009, 10 pages. International Application No. PCT/US2009/052611, International Search Report and Written Opinion dated Sep. 29, 2009, 11 pages. International Application No. PCT/US2010/030939, International Search Report and Written Opinion dated Jun. 16, 2010, 9 pages. International Application No. PCT/US2010/049172, International Search Report and Written Opinion dated Nov. 17, 2010, 7 pages. International Application No. PCT/US2011/037792, International Search Report and Written Opinion dated Sep. 8, 2011, 9 pages. International Application No. PCT/US2011/060030, International Search Report and Written Opinion dated Mar. 21, 2012, 8 pages. Purvis, Changing the Crystal Face of Gallium Nitride, The Advance Semiconductor Magazine, III-Vs Review, vol. 18, No. 8, Nov. 8, 2005, 3 pages.
Romanov et al., Strain-Induced Polarization in Wurtzite III-Nitride Semipolar Layers, J. Appl. Phys., vol. 100, Jul. 25, 2006, p. 023522-1- 023522-10.
Sato et al., High Power and High Efficiency Green Light Emitting Diode on Free-Standing Semipolar (1122) Bulk GaN Substrate, Physica Status Sol. (RRL), vol. 1, Jun. 15, 2007, pp. 162-164.
Sato et al., Optical Properties of Yellow Light-Emitting-Diodes Grown on Semipolar (1122) Bulk GaN Substrate, Applied Physics Letter, vol. 92, No. 22, 2008, pp. 221110-1-221110-3.
Schmidt et al., Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes, Japanese Journal of Applied Physics, vol. 46 Part 2, 2007, pp. 190-191.
Schmidt et al., High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes, Japanese Journal of Applied Physics, vol. 46, No. 7, Feb. 9, 2007, pp. L126-L128.
Schoedl et al., Facet degradation of GaN Heterostructure laser diodes, Journal of Applied Physics, vol. 97, No. 12, 2005, pp. 123102-1-123102-8.
Shchekin et al., High Performance Thin-Film Flip-Chip InGaN— GaN Light-Emitting Diodes, Applied Physics Letters, vol. 89, Aug. 16, 2006, pp. 071109-1-071109-3.
Shen et al., Auger Recombination in InGaN Measured by
Sizov et al., 500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells, Applied Physics Express, vol. 2, Jun. 19, 2009, pp. 071001-1-071001-3.
Tomiya et al., Dislocation Related Issues in the Degradation of GaN-Based Laser Diodes, IEEE Journal of Selected Topics in Quantum Electronics, vol. 10, Issue 6, Nov.-Dec. 2004, pp. 1277- 1286.
Tyagi et al., High Brightness Violet InGan/Gan Light EMitting Diodes on Semipolar (1011) Bulk Gan Substrates, Japanese Journal of Applied Physics, vol. 46, No. 4-7, Feb. 9, 2007, pp. L129-L131.
Tyagi et al., Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates, Japanese Journal of Applied Physics, vol. 46, No. 19, Part 2, May 11, 2007, pp. L444-L445.
Uchida et al., Recent Progress in High-Power Blue-Violet Lasers, IEEE Journal of Selected Topics in Quantum Electronics, vol. 9, Issue 5, Sep.-Oct. 2003, pp. 1252-1259.
Waltereit et al., Nitride Semiconductors Free of Electrostatic Fields for Efficient White Light-Emitting Diodes, Nature, vol. 406, Aug. 24, 2000, pp. 865-868.
Wierer et al., High-powerAlGaInN Flip-Chip Light-Emitting Diodes, Applied Physics Letters, vol. 78, No. 22, 2001, pp. 3379-3381.
Yamaguchi, Anisotropic Optical Matrix Elements in Strained GaN- Quantum Wells with Various substrate Orientations, Physica Status Solidi (PSS), vol. 5, No. 6, May 2008, pp. 2329-2332.
Yoshizumi et al., Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates, Applied Physics Express, vol. 2, No. 9, Aug. 2009, pp. 1-3.
Yu et al., Multiple Wavelength Emission from Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD, Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Sci- ence Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD), 2007, 2 pages.
Zhong et al., Demonstration of High Power Blue-Green Light Emitting Diode on Semipolar (1122) bulk GaN substrate, Electron- ics Letters, vol. 43, No. 15, Jul. 2007, pp. 825-826.
High power and high efficiency blue light emitting diode on freestanding semipolar (1011) bulk GaN substrate. Zhong et al., “High power and high efficiency blue light emitting diode on freestanding semipolar (1011) bulk GaN substrate,”Applied Physics Letters, vol. 90, downloaded Apr. 19, 2010, 3 pages.
