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A method for fabricating a vertical nitride semiconductor light emitting device, comprising steps of: preparing a GaN substrate; forming a mask layer with a predetermined pattern to expose a partial area of the GaN substrate; forming a buffer layer on the partially exposed GaN substrate, the buffer layer made of a material having a 10% or less lattice mismatch with GaN, wherein the buffer layer comprises one selected from a group consisting of ZnO, Ga,03 and Zr B; laterally growing a first conductivity-type nitride-based compound semiconductor doped with first conductive impurities from a top surface of the buffer layer toward a top surface of the mask layer and vertically growing the first conductivity-type nitride-based compound semiconductor to form a first conductivity-type nitride-based compound semiconductor layer, and growing an active layer made of a nitride-based compound on the first conductivity-type nitride-based compound semiconductor layer and a second conductivity type nitride-based compound layer doped with second conductive impurities on the active layer, thereby forming a light emitting structure.

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- 19. A method-for fabricating a vertical nitride semiconducto r-l ight emitting device, comprising steps of: preparing a GaN substrate; forming a mask layer with a predetermined pattern to expose a partial area of the GaN substrate; forming a buffer layer on the partially exposed GaN substrate, the buffer layer made of a material having a 10% or less lattice mismatch with GaN; laterally growing a first conductivity-type nitride-based compound semiconductor doped with first conductive impurities from a top surface of the buffer layer toward a top surface of the mask layer and vertically growing the first conductivity-type nitride-based compound semiconductor to form a first conductivity-type nitride-based compound semiconductor layer, and growing an active layer made of a nitride-based compound on the first conductivity-type nitride-based compound semiconductor layer and a second conductivity type nitride-based compound layer doped with second conductive impurities on the active layer, thereby forming a light emitting structure.

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A method for fabricating a vertical nitride semiconductor light emitting device, comprising steps of: preparing a GaN substrate; forming a mask layer with a predetermined pattern to expose a partial area of the GaN substrate; forming a buffer layer on the partially exposed GaN substrate, the buffer layer made of a material having a 10% or less lattice mismatch with GaN, wherein the buffer layer comprises one selected from a group consisting of ZnO, Ga,03 and Zr B; laterally growing a first conductivity-type nitride-based compound semiconductor doped with first conductive impurities from a top surface of the buffer layer toward a top surface of the mask layer and vertically growing the first conductivity-type nitride-based compound semiconductor to form a first conductivity-type nitride-based compound semiconductor layer, and growing an active layer made of a nitride-based compound on the first conductivity-type nitride-based compound semiconductor layer and a second conductivity type nitride-based compound layer doped with second conductive impurities on the active layer, thereby forming a light emitting structure.

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- 19. A method-for fabricating a vertical nitride semiconducto r-l ight emitting device, comprising steps of: preparing a GaN substrate; forming a mask layer with a predetermined pattern to expose a partial area of the GaN substrate; forming a buffer layer on the partially exposed GaN substrate, the buffer layer made of a material having a 10% or less lattice mismatch with GaN; laterally growing a first conductivity-type nitride-based compound semiconductor doped with first conductive impurities from a top surface of the buffer layer toward a top surface of the mask layer and vertically growing the first conductivity-type nitride-based compound semiconductor to form a first conductivity-type nitride-based compound semiconductor layer, and growing an active layer made of a nitride-based compound on the first conductivity-type nitride-based compound semiconductor layer and a second conductivity type nitride-based compound layer doped with second conductive impurities on the active layer, thereby forming a light emitting structure.

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A method for fabricating a vertical nitride semiconductor light emitting device, comprising steps of: preparing a GaN substrate; forming a mask layer with a predetermined pattern to expose a partial area of the GaN substrate; forming a buffer layer on the partially exposed GaN substrate, the buffer layer made of a material having a 10% or less lattice mismatch with GaN, wherein the buffer layer comprises one selected from a group consisting of ZnO, Ga,03 and Zr B; laterally growing a first conductivity-type nitride-based compound semiconductor doped with first conductive impurities from a top surface of the buffer layer toward a top surface of the mask layer and vertically growing the first conductivity-type nitride-based compound semiconductor to form a first conductivity-type nitride-based compound semiconductor layer, and growing an active layer made of a nitride-based compound on the first conductivity-type nitride-based compound semiconductor layer and a second conductivity type nitride-based compound layer doped with second conductive impurities on the active layer, thereby forming a light emitting structure.

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- 19. A method-for fabricating a vertical nitride semiconducto r-l ight emitting device, comprising steps of: preparing a GaN substrate; forming a mask layer with a predetermined pattern to expose a partial area of the GaN substrate; forming a buffer layer on the partially exposed GaN substrate, the buffer layer made of a material having a 10% or less lattice mismatch with GaN; laterally growing a first conductivity-type nitride-based compound semiconductor doped with first conductive impurities from a top surface of the buffer layer toward a top surface of the mask layer and vertically growing the first conductivity-type nitride-based compound semiconductor to form a first conductivity-type nitride-based compound semiconductor layer, and growing an active layer made of a nitride-based compound on the first conductivity-type nitride-based compound semiconductor layer and a second conductivity type nitride-based compound layer doped with second conductive impurities on the active layer, thereby forming a light emitting structure.

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A method for fabricating a vertical nitride semiconductor light emitting device, comprising steps of: preparing a GaN substrate; forming a mask layer with a predetermined pattern to expose a partial area of the GaN substrate; forming a buffer layer on the partially exposed GaN substrate, the buffer layer made of a material having a 10% or less lattice mismatch with GaN, wherein the buffer layer comprises one selected from a group consisting of ZnO, Ga,03 and Zr B; laterally growing a first conductivity-type nitride-based compound semiconductor doped with first conductive impurities from a top surface of the buffer layer toward a top surface of the mask layer and vertically growing the first conductivity-type nitride-based compound semiconductor to form a first conductivity-type nitride-based compound semiconductor layer, and growing an active layer made of a nitride-based compound on the first conductivity-type nitride-based compound semiconductor layer and a second conductivity type nitride-based compound layer doped with second conductive impurities on the active layer, thereby forming a light emitting structure.

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- 19. A method-for fabricating a vertical nitride semiconducto r-l ight emitting device, comprising steps of: preparing a GaN substrate; forming a mask layer with a predetermined pattern to expose a partial area of the GaN substrate; forming a buffer layer on the partially exposed GaN substrate, the buffer layer made of a material having a 10% or less lattice mismatch with GaN; laterally growing a first conductivity-type nitride-based compound semiconductor doped with first conductive impurities from a top surface of the buffer layer toward a top surface of the mask layer and vertically growing the first conductivity-type nitride-based compound semiconductor to form a first conductivity-type nitride-based compound semiconductor layer, and growing an active layer made of a nitride-based compound on the first conductivity-type nitride-based compound semiconductor layer and a second conductivity type nitride-based compound layer doped with second conductive impurities on the active layer, thereby forming a light emitting structure.