Patent
US 11,101,406Efficient Wideband Gap GaN-Based LED Chip Based on a surface Plasmon Effect and Manufacturing Method Therefor
Huamao HUANG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,101,406Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1- 8 is a schematic diagram of a p-electrode layer and an n-electrode layer manufactured in Embodiment 1. [005 6] F I G. 2- 1 is a schematic diagram of a …
FIG. 2-7 is a schematic diagram of a p-electrode layer and an n-electrode layer SVG 16485426.08-12-2019.JZ₉₆₈₁TGRXEAPX3.SPEC.9.1.309.187.657.286.svg 0.33 1.16 …
FIG. 3-4 is a schematic diagram of a p-GaN layer having a micro-nano composite structure manufactured in Embodiment 3. [0067]
FIG. 4-4 is a schematic diagram of a metallic re f lecting mirror layer manufactured in SVG 16485426.08-12-2019.JZ₉₆₈₁TGRXEAPX3.SPEC.10.1.309.187.657.286.svg …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An efficient wideband gap GaN-based LED chip based on a surface plasmon effect, the broadband efficient GaN-based LED chip is of a flip-chip structure, comprising from bottom to top in sequence, a substrate, a buffer layer, an unintentionally doped GaN layer, an n-GaN layer, a quantum well layer, an electron blocking layer, a p-GaN layer, a metallic reflecting mirror layer, a passivation layer, a p-electrode layer, and an n-electrode layer; and a position of a bottom surface of the metallic reflecting mirror layer contacted to a surface of the p-GaN layer is provided with a micro-nano composite metal structure, wherein the micro-nano composite metal structure comprises a micro metal structure and a nano metal structure; both the micro metal structure and the nano metal structure are structures with alternating protrusion and recess, and the nano metal structure is distributed on an interface of the micro metal structure and the p-GaN layer; the surface of the p-GaN layer is provided with a micro-nano composite structure complementary to the micro-nano composite metal structure; and protrusion portions of the micro metal structure extend to a position 10 r n to 1 m from a bottom of the p-GaN layer and close to the quantum well layer, and recess portions of the micro metal structure cover the surface of the p-GaN layer. Currently amended
(Cancel) Canceled
The efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim [[2]] 1, wherein the protrusion and recess portions of the micro metal structure are distributed in space in one ma nner of random distribution, one-dimensional grating distribution, and two-dimensional lattice distribution, and a shape of the protrusion and an inner concave shape of the recess are both one of a cuboid, a cylinder, a truncated cone, a prism and a prism frustum; and protrusion and recess portions of the nano metal structure are distributed in space in one manner of random distribution, one-dimensional grating distribution, and two-dimensional lattice distribution, and a shape of the protrusion and an inner concave shape of the recess are both one of an irregular shape, a cuboid, a cylinder, a truncated cone, a prism and a prism frustum. Currently amended
(Cu r rently amended) The-br efficient wideband gap GaN-based LED chip based on a sur fa ce plasmon effect according to claim [[2]] 1, wherein both an outer diameter and a height of the protrusion and an inner diameter and a depth of the recess of the micro metal structure are greater than a propagation length of a surface plasmon, ranging from 50 nm to 5 m; and a distance between the nano metal structu r e o n the protrusion portion of the micro metal structure and the quantum well layer is smaller than a penetration depth of the surface plasmon in a chip medium, ranging from 10 nm to 200 nm. Currently amended
A manufacturing method for the ef f icient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim [[2]] 1, comprising the following steps of: (1) sequentially manufacturing the buffer layer, the unintentionally doped GaN layer, the n-GaN layer, the quantum well layer, the electron blocking layer, and a flat p-GaN layer on the substrate layer by layer; and manufacturing a mask structure in nanoscale on the surface of the flat p-GaN layer; (2) copying a nano size pattern of the mask structure in nanoscale to the surface of the flat p-GaN layer by etching to manufacture the p-GaN layer having a nano size structure, and removing remaining mask materials of the remaining mask structure in nanoscale; (3) m anufacturing a mask structur e in microscale on the surface of the p-GaN layer having a nano size structure; (4) copying a micron siz e pattern of the mask structure in microscale to the p-GaN layer having a nano size structure by etching to manufacture the p-GaN layer with the micro-nano composite structure distributed on the whole surface thereof, and removing remaining mask materials of the remaining mask structure in microscale; (5) manufacturing the metallic reflecting mirror layer on the surface of the p-GaN layer distributed with the micro-nano composite structure, and distributing a p-electrode metal hole and an n-electrode metal hole in the metallic reflecting mirror l aye r; (6) extending to the n-GaN layer through etching at the n-electrode metal hole to form an n-electrode step; (7) manufacturing the passivation layer on a surface of the metallic reflecting mirror layer, and distributing a p-electrode dielectric hole and an n-electrode dielectric hole in the passivation layer; and (8) manufacturing the p-electrode layer and the n-electrode layer on a surface of the passivation layer. Currently amended
(Cu rr ently amended) The manufacturing method for the efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim 5, wherein in the steps (1), (2), (3) and (4), after manufacturing the mask structure in nanoscale on the surface of the flat p-GaN layer, the mask structure in microscale is directly manufactured on the surface of the mask structure in nanoscale, the p-GaN layer having a micro-nano composite structure is manufactured by one-time etching, and a protrusion surface of the p-GaN layer having a micro-nano composite structure does not have a nano structure thereon. Currently amended
The manufacturing method for the efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim 5, wherein in the steps (1), (2), (3) and (4), the p-G a N layer having a micron size structure is firstly manufactured on the surface of the flat p-GaN layer by etching the mask structure in microscale; and then the p-GaN layer having a micro-nano composite structure distributed on the whole surface thereof is manufactured by etching the mask structure in nanoscale on the surface of the p-GaN layer having a micron size structure. Currently amended
The manufacturing method for the efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim 5, wherein in the steps (1), (2), (3) and (4), the p-GaN layer having a micron size structure is firstly manufactured on the surface of the flat p-GaN layer by etching the mask structure in microscale; and then the mask structure in nanoscale is manufactured on the surface of the p-GaN layer having a micron size structure, and the metallic reflecting mirror layer is directly manufactured on the surface of the mask st r ucture in nanoscale. Currently amended
The manufacturing method according to claim 5, wherein the manufacturing of the mask structure in nanoscale comprises the following steps of: (1) manufacturing a thin film on the surface of the p-GaN layer, a material of the thin film being one of SiO 2, SiN, A 1 2 0 3 or metal; and (2) sequentially using a photolithography technology and a dry etching technology to manufacture a pattern in nanoscale on the thin film to obtain the mask structure in nanoscale; wherein the photolithography technology comprising one of a projection photolithography technology, a deep-ultraviolet photolithography technology, a laser interference photolithography technology, a nanoimprint lithography and an electron beam lithography; and the dry etching technology comprising one of reactive ion etching, inductively coupled plasma etching or focused ion beam etching. Previously presented
The manufacturing method according to claim 5, wherein the manufacturing of the mask structure in nanoscale comprises the following steps of: (1) adding tiny spheres in nanoscale into a solvent to prepare a tiny-sphere solution with a mass fraction of 0.5% to 10%, and unifo rm ly dispersing the tiny spheres in the solution, the tiny spheres being one of poly(propyl ethylene), SiO 2, A 1 2 0 3, metal or metal/Si O 2 core-shell particle, the solvent being one of deionized water, absolute ethyl alcohol or iso-propanol, and the dispersing method being one of ultrasonic vibration or magnetic stirring; (2) slowly dropwise adding the tiny-sphere solution into the deionized water with a calm liquid level along an inner wall of a container to completely diffuse the tiny spheres on the liquid level; and dropwise adding a surfactant on the liquid level, so that the tiny spheres fo n a single-layer compact tiny-sphere film stably floating on the liquid level, the surfactant being one of a sodium dodecyl sulfate solution, a sodium dodecylbenzene sulfonate solution, a sodium dioctylsulfosuccinate solution, a sodium glycocholate solution or a triethanolamine soap solution with a mass fraction of 0.5% to 10%; and (3) dipping the flat p-GaN layer or the p-GaN layer having a micron size structure into the liquid level, which is slowly moved towards the tiny-sphere film after being contacted with the tiny-sphere film, and pulled upwardly at an angle of 30 0 to 60 0, so that the tiny-sphere film is transfe rr ed from the liquid level to the surface of the flat p-GaN layer or the surface of the p-GaN layer having a micron size structure, and then the solvent is completely volatilized by standing. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
efficient wideband gap GaN-based LED chip with surface plasmon effect (flip-chip)
Materials described outside the worked examples.
micro-nano composite metal structure
p-GaN layer
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
micro metal structure protrusion/recess outer diameter, height, inner diameter, depth (propagation length of surface plasmon) | — | micro-nano composite metal structure |
distance between nano metal structure on micro metal structure protrusion and quantum well layer (penetration depth of surface plasmon in chip medium) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,101,406Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1- 8 is a schematic diagram of a p-electrode layer and an n-electrode layer manufactured in Embodiment 1. [005 6] F I G. 2- 1 is a schematic diagram of a …
FIG. 2-7 is a schematic diagram of a p-electrode layer and an n-electrode layer SVG 16485426.08-12-2019.JZ₉₆₈₁TGRXEAPX3.SPEC.9.1.309.187.657.286.svg 0.33 1.16 …
FIG. 3-4 is a schematic diagram of a p-GaN layer having a micro-nano composite structure manufactured in Embodiment 3. [0067]
FIG. 4-4 is a schematic diagram of a metallic re f lecting mirror layer manufactured in SVG 16485426.08-12-2019.JZ₉₆₈₁TGRXEAPX3.SPEC.10.1.309.187.657.286.svg …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An efficient wideband gap GaN-based LED chip based on a surface plasmon effect, the broadband efficient GaN-based LED chip is of a flip-chip structure, comprising from bottom to top in sequence, a substrate, a buffer layer, an unintentionally doped GaN layer, an n-GaN layer, a quantum well layer, an electron blocking layer, a p-GaN layer, a metallic reflecting mirror layer, a passivation layer, a p-electrode layer, and an n-electrode layer; and a position of a bottom surface of the metallic reflecting mirror layer contacted to a surface of the p-GaN layer is provided with a micro-nano composite metal structure, wherein the micro-nano composite metal structure comprises a micro metal structure and a nano metal structure; both the micro metal structure and the nano metal structure are structures with alternating protrusion and recess, and the nano metal structure is distributed on an interface of the micro metal structure and the p-GaN layer; the surface of the p-GaN layer is provided with a micro-nano composite structure complementary to the micro-nano composite metal structure; and protrusion portions of the micro metal structure extend to a position 10 r n to 1 m from a bottom of the p-GaN layer and close to the quantum well layer, and recess portions of the micro metal structure cover the surface of the p-GaN layer. Currently amended
(Cancel) Canceled
The efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim [[2]] 1, wherein the protrusion and recess portions of the micro metal structure are distributed in space in one ma nner of random distribution, one-dimensional grating distribution, and two-dimensional lattice distribution, and a shape of the protrusion and an inner concave shape of the recess are both one of a cuboid, a cylinder, a truncated cone, a prism and a prism frustum; and protrusion and recess portions of the nano metal structure are distributed in space in one manner of random distribution, one-dimensional grating distribution, and two-dimensional lattice distribution, and a shape of the protrusion and an inner concave shape of the recess are both one of an irregular shape, a cuboid, a cylinder, a truncated cone, a prism and a prism frustum. Currently amended
(Cu r rently amended) The-br efficient wideband gap GaN-based LED chip based on a sur fa ce plasmon effect according to claim [[2]] 1, wherein both an outer diameter and a height of the protrusion and an inner diameter and a depth of the recess of the micro metal structure are greater than a propagation length of a surface plasmon, ranging from 50 nm to 5 m; and a distance between the nano metal structu r e o n the protrusion portion of the micro metal structure and the quantum well layer is smaller than a penetration depth of the surface plasmon in a chip medium, ranging from 10 nm to 200 nm. Currently amended
A manufacturing method for the ef f icient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim [[2]] 1, comprising the following steps of: (1) sequentially manufacturing the buffer layer, the unintentionally doped GaN layer, the n-GaN layer, the quantum well layer, the electron blocking layer, and a flat p-GaN layer on the substrate layer by layer; and manufacturing a mask structure in nanoscale on the surface of the flat p-GaN layer; (2) copying a nano size pattern of the mask structure in nanoscale to the surface of the flat p-GaN layer by etching to manufacture the p-GaN layer having a nano size structure, and removing remaining mask materials of the remaining mask structure in nanoscale; (3) m anufacturing a mask structur e in microscale on the surface of the p-GaN layer having a nano size structure; (4) copying a micron siz e pattern of the mask structure in microscale to the p-GaN layer having a nano size structure by etching to manufacture the p-GaN layer with the micro-nano composite structure distributed on the whole surface thereof, and removing remaining mask materials of the remaining mask structure in microscale; (5) manufacturing the metallic reflecting mirror layer on the surface of the p-GaN layer distributed with the micro-nano composite structure, and distributing a p-electrode metal hole and an n-electrode metal hole in the metallic reflecting mirror l aye r; (6) extending to the n-GaN layer through etching at the n-electrode metal hole to form an n-electrode step; (7) manufacturing the passivation layer on a surface of the metallic reflecting mirror layer, and distributing a p-electrode dielectric hole and an n-electrode dielectric hole in the passivation layer; and (8) manufacturing the p-electrode layer and the n-electrode layer on a surface of the passivation layer. Currently amended
(Cu rr ently amended) The manufacturing method for the efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim 5, wherein in the steps (1), (2), (3) and (4), after manufacturing the mask structure in nanoscale on the surface of the flat p-GaN layer, the mask structure in microscale is directly manufactured on the surface of the mask structure in nanoscale, the p-GaN layer having a micro-nano composite structure is manufactured by one-time etching, and a protrusion surface of the p-GaN layer having a micro-nano composite structure does not have a nano structure thereon. Currently amended
The manufacturing method for the efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim 5, wherein in the steps (1), (2), (3) and (4), the p-G a N layer having a micron size structure is firstly manufactured on the surface of the flat p-GaN layer by etching the mask structure in microscale; and then the p-GaN layer having a micro-nano composite structure distributed on the whole surface thereof is manufactured by etching the mask structure in nanoscale on the surface of the p-GaN layer having a micron size structure. Currently amended
The manufacturing method for the efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim 5, wherein in the steps (1), (2), (3) and (4), the p-GaN layer having a micron size structure is firstly manufactured on the surface of the flat p-GaN layer by etching the mask structure in microscale; and then the mask structure in nanoscale is manufactured on the surface of the p-GaN layer having a micron size structure, and the metallic reflecting mirror layer is directly manufactured on the surface of the mask st r ucture in nanoscale. Currently amended
The manufacturing method according to claim 5, wherein the manufacturing of the mask structure in nanoscale comprises the following steps of: (1) manufacturing a thin film on the surface of the p-GaN layer, a material of the thin film being one of SiO 2, SiN, A 1 2 0 3 or metal; and (2) sequentially using a photolithography technology and a dry etching technology to manufacture a pattern in nanoscale on the thin film to obtain the mask structure in nanoscale; wherein the photolithography technology comprising one of a projection photolithography technology, a deep-ultraviolet photolithography technology, a laser interference photolithography technology, a nanoimprint lithography and an electron beam lithography; and the dry etching technology comprising one of reactive ion etching, inductively coupled plasma etching or focused ion beam etching. Previously presented
The manufacturing method according to claim 5, wherein the manufacturing of the mask structure in nanoscale comprises the following steps of: (1) adding tiny spheres in nanoscale into a solvent to prepare a tiny-sphere solution with a mass fraction of 0.5% to 10%, and unifo rm ly dispersing the tiny spheres in the solution, the tiny spheres being one of poly(propyl ethylene), SiO 2, A 1 2 0 3, metal or metal/Si O 2 core-shell particle, the solvent being one of deionized water, absolute ethyl alcohol or iso-propanol, and the dispersing method being one of ultrasonic vibration or magnetic stirring; (2) slowly dropwise adding the tiny-sphere solution into the deionized water with a calm liquid level along an inner wall of a container to completely diffuse the tiny spheres on the liquid level; and dropwise adding a surfactant on the liquid level, so that the tiny spheres fo n a single-layer compact tiny-sphere film stably floating on the liquid level, the surfactant being one of a sodium dodecyl sulfate solution, a sodium dodecylbenzene sulfonate solution, a sodium dioctylsulfosuccinate solution, a sodium glycocholate solution or a triethanolamine soap solution with a mass fraction of 0.5% to 10%; and (3) dipping the flat p-GaN layer or the p-GaN layer having a micron size structure into the liquid level, which is slowly moved towards the tiny-sphere film after being contacted with the tiny-sphere film, and pulled upwardly at an angle of 30 0 to 60 0, so that the tiny-sphere film is transfe rr ed from the liquid level to the surface of the flat p-GaN layer or the surface of the p-GaN layer having a micron size structure, and then the solvent is completely volatilized by standing. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
efficient wideband gap GaN-based LED chip with surface plasmon effect (flip-chip)
Materials described outside the worked examples.
micro-nano composite metal structure
p-GaN layer
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
micro metal structure protrusion/recess outer diameter, height, inner diameter, depth (propagation length of surface plasmon) | — | micro-nano composite metal structure |
distance between nano metal structure on micro metal structure protrusion and quantum well layer (penetration depth of surface plasmon in chip medium) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,101,406Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1- 8 is a schematic diagram of a p-electrode layer and an n-electrode layer manufactured in Embodiment 1. [005 6] F I G. 2- 1 is a schematic diagram of a …
FIG. 2-7 is a schematic diagram of a p-electrode layer and an n-electrode layer SVG 16485426.08-12-2019.JZ₉₆₈₁TGRXEAPX3.SPEC.9.1.309.187.657.286.svg 0.33 1.16 …
FIG. 3-4 is a schematic diagram of a p-GaN layer having a micro-nano composite structure manufactured in Embodiment 3. [0067]
FIG. 4-4 is a schematic diagram of a metallic re f lecting mirror layer manufactured in SVG 16485426.08-12-2019.JZ₉₆₈₁TGRXEAPX3.SPEC.10.1.309.187.657.286.svg …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An efficient wideband gap GaN-based LED chip based on a surface plasmon effect, the broadband efficient GaN-based LED chip is of a flip-chip structure, comprising from bottom to top in sequence, a substrate, a buffer layer, an unintentionally doped GaN layer, an n-GaN layer, a quantum well layer, an electron blocking layer, a p-GaN layer, a metallic reflecting mirror layer, a passivation layer, a p-electrode layer, and an n-electrode layer; and a position of a bottom surface of the metallic reflecting mirror layer contacted to a surface of the p-GaN layer is provided with a micro-nano composite metal structure, wherein the micro-nano composite metal structure comprises a micro metal structure and a nano metal structure; both the micro metal structure and the nano metal structure are structures with alternating protrusion and recess, and the nano metal structure is distributed on an interface of the micro metal structure and the p-GaN layer; the surface of the p-GaN layer is provided with a micro-nano composite structure complementary to the micro-nano composite metal structure; and protrusion portions of the micro metal structure extend to a position 10 r n to 1 m from a bottom of the p-GaN layer and close to the quantum well layer, and recess portions of the micro metal structure cover the surface of the p-GaN layer. Currently amended
(Cancel) Canceled
The efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim [[2]] 1, wherein the protrusion and recess portions of the micro metal structure are distributed in space in one ma nner of random distribution, one-dimensional grating distribution, and two-dimensional lattice distribution, and a shape of the protrusion and an inner concave shape of the recess are both one of a cuboid, a cylinder, a truncated cone, a prism and a prism frustum; and protrusion and recess portions of the nano metal structure are distributed in space in one manner of random distribution, one-dimensional grating distribution, and two-dimensional lattice distribution, and a shape of the protrusion and an inner concave shape of the recess are both one of an irregular shape, a cuboid, a cylinder, a truncated cone, a prism and a prism frustum. Currently amended
(Cu r rently amended) The-br efficient wideband gap GaN-based LED chip based on a sur fa ce plasmon effect according to claim [[2]] 1, wherein both an outer diameter and a height of the protrusion and an inner diameter and a depth of the recess of the micro metal structure are greater than a propagation length of a surface plasmon, ranging from 50 nm to 5 m; and a distance between the nano metal structu r e o n the protrusion portion of the micro metal structure and the quantum well layer is smaller than a penetration depth of the surface plasmon in a chip medium, ranging from 10 nm to 200 nm. Currently amended
A manufacturing method for the ef f icient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim [[2]] 1, comprising the following steps of: (1) sequentially manufacturing the buffer layer, the unintentionally doped GaN layer, the n-GaN layer, the quantum well layer, the electron blocking layer, and a flat p-GaN layer on the substrate layer by layer; and manufacturing a mask structure in nanoscale on the surface of the flat p-GaN layer; (2) copying a nano size pattern of the mask structure in nanoscale to the surface of the flat p-GaN layer by etching to manufacture the p-GaN layer having a nano size structure, and removing remaining mask materials of the remaining mask structure in nanoscale; (3) m anufacturing a mask structur e in microscale on the surface of the p-GaN layer having a nano size structure; (4) copying a micron siz e pattern of the mask structure in microscale to the p-GaN layer having a nano size structure by etching to manufacture the p-GaN layer with the micro-nano composite structure distributed on the whole surface thereof, and removing remaining mask materials of the remaining mask structure in microscale; (5) manufacturing the metallic reflecting mirror layer on the surface of the p-GaN layer distributed with the micro-nano composite structure, and distributing a p-electrode metal hole and an n-electrode metal hole in the metallic reflecting mirror l aye r; (6) extending to the n-GaN layer through etching at the n-electrode metal hole to form an n-electrode step; (7) manufacturing the passivation layer on a surface of the metallic reflecting mirror layer, and distributing a p-electrode dielectric hole and an n-electrode dielectric hole in the passivation layer; and (8) manufacturing the p-electrode layer and the n-electrode layer on a surface of the passivation layer. Currently amended
(Cu rr ently amended) The manufacturing method for the efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim 5, wherein in the steps (1), (2), (3) and (4), after manufacturing the mask structure in nanoscale on the surface of the flat p-GaN layer, the mask structure in microscale is directly manufactured on the surface of the mask structure in nanoscale, the p-GaN layer having a micro-nano composite structure is manufactured by one-time etching, and a protrusion surface of the p-GaN layer having a micro-nano composite structure does not have a nano structure thereon. Currently amended
The manufacturing method for the efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim 5, wherein in the steps (1), (2), (3) and (4), the p-G a N layer having a micron size structure is firstly manufactured on the surface of the flat p-GaN layer by etching the mask structure in microscale; and then the p-GaN layer having a micro-nano composite structure distributed on the whole surface thereof is manufactured by etching the mask structure in nanoscale on the surface of the p-GaN layer having a micron size structure. Currently amended
The manufacturing method for the efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim 5, wherein in the steps (1), (2), (3) and (4), the p-GaN layer having a micron size structure is firstly manufactured on the surface of the flat p-GaN layer by etching the mask structure in microscale; and then the mask structure in nanoscale is manufactured on the surface of the p-GaN layer having a micron size structure, and the metallic reflecting mirror layer is directly manufactured on the surface of the mask st r ucture in nanoscale. Currently amended
The manufacturing method according to claim 5, wherein the manufacturing of the mask structure in nanoscale comprises the following steps of: (1) manufacturing a thin film on the surface of the p-GaN layer, a material of the thin film being one of SiO 2, SiN, A 1 2 0 3 or metal; and (2) sequentially using a photolithography technology and a dry etching technology to manufacture a pattern in nanoscale on the thin film to obtain the mask structure in nanoscale; wherein the photolithography technology comprising one of a projection photolithography technology, a deep-ultraviolet photolithography technology, a laser interference photolithography technology, a nanoimprint lithography and an electron beam lithography; and the dry etching technology comprising one of reactive ion etching, inductively coupled plasma etching or focused ion beam etching. Previously presented
The manufacturing method according to claim 5, wherein the manufacturing of the mask structure in nanoscale comprises the following steps of: (1) adding tiny spheres in nanoscale into a solvent to prepare a tiny-sphere solution with a mass fraction of 0.5% to 10%, and unifo rm ly dispersing the tiny spheres in the solution, the tiny spheres being one of poly(propyl ethylene), SiO 2, A 1 2 0 3, metal or metal/Si O 2 core-shell particle, the solvent being one of deionized water, absolute ethyl alcohol or iso-propanol, and the dispersing method being one of ultrasonic vibration or magnetic stirring; (2) slowly dropwise adding the tiny-sphere solution into the deionized water with a calm liquid level along an inner wall of a container to completely diffuse the tiny spheres on the liquid level; and dropwise adding a surfactant on the liquid level, so that the tiny spheres fo n a single-layer compact tiny-sphere film stably floating on the liquid level, the surfactant being one of a sodium dodecyl sulfate solution, a sodium dodecylbenzene sulfonate solution, a sodium dioctylsulfosuccinate solution, a sodium glycocholate solution or a triethanolamine soap solution with a mass fraction of 0.5% to 10%; and (3) dipping the flat p-GaN layer or the p-GaN layer having a micron size structure into the liquid level, which is slowly moved towards the tiny-sphere film after being contacted with the tiny-sphere film, and pulled upwardly at an angle of 30 0 to 60 0, so that the tiny-sphere film is transfe rr ed from the liquid level to the surface of the flat p-GaN layer or the surface of the p-GaN layer having a micron size structure, and then the solvent is completely volatilized by standing. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
efficient wideband gap GaN-based LED chip with surface plasmon effect (flip-chip)
Materials described outside the worked examples.
micro-nano composite metal structure
p-GaN layer
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
micro metal structure protrusion/recess outer diameter, height, inner diameter, depth (propagation length of surface plasmon) | — | micro-nano composite metal structure |
distance between nano metal structure on micro metal structure protrusion and quantum well layer (penetration depth of surface plasmon in chip medium) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,101,406Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1- 8 is a schematic diagram of a p-electrode layer and an n-electrode layer manufactured in Embodiment 1. [005 6] F I G. 2- 1 is a schematic diagram of a …
FIG. 2-7 is a schematic diagram of a p-electrode layer and an n-electrode layer SVG 16485426.08-12-2019.JZ₉₆₈₁TGRXEAPX3.SPEC.9.1.309.187.657.286.svg 0.33 1.16 …
FIG. 3-4 is a schematic diagram of a p-GaN layer having a micro-nano composite structure manufactured in Embodiment 3. [0067]
FIG. 4-4 is a schematic diagram of a metallic re f lecting mirror layer manufactured in SVG 16485426.08-12-2019.JZ₉₆₈₁TGRXEAPX3.SPEC.10.1.309.187.657.286.svg …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An efficient wideband gap GaN-based LED chip based on a surface plasmon effect, the broadband efficient GaN-based LED chip is of a flip-chip structure, comprising from bottom to top in sequence, a substrate, a buffer layer, an unintentionally doped GaN layer, an n-GaN layer, a quantum well layer, an electron blocking layer, a p-GaN layer, a metallic reflecting mirror layer, a passivation layer, a p-electrode layer, and an n-electrode layer; and a position of a bottom surface of the metallic reflecting mirror layer contacted to a surface of the p-GaN layer is provided with a micro-nano composite metal structure, wherein the micro-nano composite metal structure comprises a micro metal structure and a nano metal structure; both the micro metal structure and the nano metal structure are structures with alternating protrusion and recess, and the nano metal structure is distributed on an interface of the micro metal structure and the p-GaN layer; the surface of the p-GaN layer is provided with a micro-nano composite structure complementary to the micro-nano composite metal structure; and protrusion portions of the micro metal structure extend to a position 10 r n to 1 m from a bottom of the p-GaN layer and close to the quantum well layer, and recess portions of the micro metal structure cover the surface of the p-GaN layer. Currently amended
(Cancel) Canceled
The efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim [[2]] 1, wherein the protrusion and recess portions of the micro metal structure are distributed in space in one ma nner of random distribution, one-dimensional grating distribution, and two-dimensional lattice distribution, and a shape of the protrusion and an inner concave shape of the recess are both one of a cuboid, a cylinder, a truncated cone, a prism and a prism frustum; and protrusion and recess portions of the nano metal structure are distributed in space in one manner of random distribution, one-dimensional grating distribution, and two-dimensional lattice distribution, and a shape of the protrusion and an inner concave shape of the recess are both one of an irregular shape, a cuboid, a cylinder, a truncated cone, a prism and a prism frustum. Currently amended
(Cu r rently amended) The-br efficient wideband gap GaN-based LED chip based on a sur fa ce plasmon effect according to claim [[2]] 1, wherein both an outer diameter and a height of the protrusion and an inner diameter and a depth of the recess of the micro metal structure are greater than a propagation length of a surface plasmon, ranging from 50 nm to 5 m; and a distance between the nano metal structu r e o n the protrusion portion of the micro metal structure and the quantum well layer is smaller than a penetration depth of the surface plasmon in a chip medium, ranging from 10 nm to 200 nm. Currently amended
A manufacturing method for the ef f icient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim [[2]] 1, comprising the following steps of: (1) sequentially manufacturing the buffer layer, the unintentionally doped GaN layer, the n-GaN layer, the quantum well layer, the electron blocking layer, and a flat p-GaN layer on the substrate layer by layer; and manufacturing a mask structure in nanoscale on the surface of the flat p-GaN layer; (2) copying a nano size pattern of the mask structure in nanoscale to the surface of the flat p-GaN layer by etching to manufacture the p-GaN layer having a nano size structure, and removing remaining mask materials of the remaining mask structure in nanoscale; (3) m anufacturing a mask structur e in microscale on the surface of the p-GaN layer having a nano size structure; (4) copying a micron siz e pattern of the mask structure in microscale to the p-GaN layer having a nano size structure by etching to manufacture the p-GaN layer with the micro-nano composite structure distributed on the whole surface thereof, and removing remaining mask materials of the remaining mask structure in microscale; (5) manufacturing the metallic reflecting mirror layer on the surface of the p-GaN layer distributed with the micro-nano composite structure, and distributing a p-electrode metal hole and an n-electrode metal hole in the metallic reflecting mirror l aye r; (6) extending to the n-GaN layer through etching at the n-electrode metal hole to form an n-electrode step; (7) manufacturing the passivation layer on a surface of the metallic reflecting mirror layer, and distributing a p-electrode dielectric hole and an n-electrode dielectric hole in the passivation layer; and (8) manufacturing the p-electrode layer and the n-electrode layer on a surface of the passivation layer. Currently amended
(Cu rr ently amended) The manufacturing method for the efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim 5, wherein in the steps (1), (2), (3) and (4), after manufacturing the mask structure in nanoscale on the surface of the flat p-GaN layer, the mask structure in microscale is directly manufactured on the surface of the mask structure in nanoscale, the p-GaN layer having a micro-nano composite structure is manufactured by one-time etching, and a protrusion surface of the p-GaN layer having a micro-nano composite structure does not have a nano structure thereon. Currently amended
The manufacturing method for the efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim 5, wherein in the steps (1), (2), (3) and (4), the p-G a N layer having a micron size structure is firstly manufactured on the surface of the flat p-GaN layer by etching the mask structure in microscale; and then the p-GaN layer having a micro-nano composite structure distributed on the whole surface thereof is manufactured by etching the mask structure in nanoscale on the surface of the p-GaN layer having a micron size structure. Currently amended
The manufacturing method for the efficient wideband gap GaN-based LED chip based on a surface plasmon effect according to claim 5, wherein in the steps (1), (2), (3) and (4), the p-GaN layer having a micron size structure is firstly manufactured on the surface of the flat p-GaN layer by etching the mask structure in microscale; and then the mask structure in nanoscale is manufactured on the surface of the p-GaN layer having a micron size structure, and the metallic reflecting mirror layer is directly manufactured on the surface of the mask st r ucture in nanoscale. Currently amended
The manufacturing method according to claim 5, wherein the manufacturing of the mask structure in nanoscale comprises the following steps of: (1) manufacturing a thin film on the surface of the p-GaN layer, a material of the thin film being one of SiO 2, SiN, A 1 2 0 3 or metal; and (2) sequentially using a photolithography technology and a dry etching technology to manufacture a pattern in nanoscale on the thin film to obtain the mask structure in nanoscale; wherein the photolithography technology comprising one of a projection photolithography technology, a deep-ultraviolet photolithography technology, a laser interference photolithography technology, a nanoimprint lithography and an electron beam lithography; and the dry etching technology comprising one of reactive ion etching, inductively coupled plasma etching or focused ion beam etching. Previously presented
The manufacturing method according to claim 5, wherein the manufacturing of the mask structure in nanoscale comprises the following steps of: (1) adding tiny spheres in nanoscale into a solvent to prepare a tiny-sphere solution with a mass fraction of 0.5% to 10%, and unifo rm ly dispersing the tiny spheres in the solution, the tiny spheres being one of poly(propyl ethylene), SiO 2, A 1 2 0 3, metal or metal/Si O 2 core-shell particle, the solvent being one of deionized water, absolute ethyl alcohol or iso-propanol, and the dispersing method being one of ultrasonic vibration or magnetic stirring; (2) slowly dropwise adding the tiny-sphere solution into the deionized water with a calm liquid level along an inner wall of a container to completely diffuse the tiny spheres on the liquid level; and dropwise adding a surfactant on the liquid level, so that the tiny spheres fo n a single-layer compact tiny-sphere film stably floating on the liquid level, the surfactant being one of a sodium dodecyl sulfate solution, a sodium dodecylbenzene sulfonate solution, a sodium dioctylsulfosuccinate solution, a sodium glycocholate solution or a triethanolamine soap solution with a mass fraction of 0.5% to 10%; and (3) dipping the flat p-GaN layer or the p-GaN layer having a micron size structure into the liquid level, which is slowly moved towards the tiny-sphere film after being contacted with the tiny-sphere film, and pulled upwardly at an angle of 30 0 to 60 0, so that the tiny-sphere film is transfe rr ed from the liquid level to the surface of the flat p-GaN layer or the surface of the p-GaN layer having a micron size structure, and then the solvent is completely volatilized by standing. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
efficient wideband gap GaN-based LED chip with surface plasmon effect (flip-chip)
Materials described outside the worked examples.
micro-nano composite metal structure
p-GaN layer
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
micro metal structure protrusion/recess outer diameter, height, inner diameter, depth (propagation length of surface plasmon) | — | micro-nano composite metal structure |
distance between nano metal structure on micro metal structure protrusion and quantum well layer (penetration depth of surface plasmon in chip medium) |
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