Patent
US 8,859,413METHOD OF GROWING GAN CRYSTAL ON SILICON SUBSTRATE, AND LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF
Sung-soo Park
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,859,413Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a structure of a conventional light emitting device manufactured using a sapphire substrate. [0014]
FIGS. 2A through 2G are cross-sectional views illustrating a method of growing GaN single crystals according to example embodiments. [0015]
FIGS. 3A through 3 C are microscopic images of metal nano-clusters formed by annealing metal layers formed of Au to thicknesses of 50 A, 1 50A, and 300A, …
FIGS. 4A and 4B are graphs showing various characteristics of metal nano- clusters formed by annealing according to varying thicknesses of metal layers formed …
FIG. 5 is a microscopic image of a metal nano-cluster formed of anodized aluminum oxide (AA O) according to example embodiments. [0018]
FIG. 6 is a microscopic image of a sample of GaN single crystals grown on a silicon substrate according to example embodiments. [0019]
FIGS. 7 and 8 respectively are graphs showing XRD locking curves measured at (002) plane and (102) plane according to example embodiments. [0020]
FIGS. 9A through 9D are cross-sectional views illustrating a method of manufacturing a GaN-based light emitting device, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
The method of claim 7, wherein the metal nano- dots are formed by anodizing an aluminum thin film after depositing the aluminum thin film on the silicon oxide layer. SVG 12073097.05-16-2014.HVJGCNT₇PXXIFW4.CLM18329566.3.969.117.2186.283.svg 0.553 4.057 Drawing Black and white
The method of claim 7, wherein the metal nano- dots are formed by annealing an Au thin film after depositing the Au thin film on the silicon oxide layer. SVG 12073097.05-16-2014.HVJGCNT₇PXXIFW4.CLM18329566.10.56.764.2193.824.svg 0.2 7.123 Drawing Black and white SVG 12073097.05-16-2014.HVJGCNT₇PXXIFW4.CLM18329566.11.64.886.1473.941.svg 0.183 4.697 Drawing Black and white
The method of claim 11, wherein the thickness of the buffer layer is in a range of 1 to 50 nm.
The method of claim 7, wherein the p-electrode is formed on the p-GaN layer, and the n-electrode is formed on a lower surface of the silicon substrate.
The method of claim 7, wherein the p-electrode is formed on the p-GaN layer, and the n-electrode is formed on exposed portions of the n-GaN layer formed by etching portions of the active layer and the p-GaN layer. 15.-20.
canceled
canceled
canceled
canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Au metal layers of thicknesses 50 A, 150 A, and 300 A were deposited and annealed at 600 °C for 1 minute under an air atmosphere to form metal nano-clusters. Nano-dots with width 50–300 nm, height 10–160 nm, gaps 50–200 nm, and density 5–100 ea/μm² were obtained depending on Au thickness.
2 materials1 process step
An aluminum metal layer was deposited and anodized at 10 °C using 0.3 M oxalic acid. A pore widening process was then performed at 20 °C using 5.4 wt% phosphoric acid to form an AAO nano-cluster.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting device on silicon substrate
Materials described outside the worked examples.
GaN
TiN group metal nitride buffer layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 7 and 8 respectively are graphs showing XRD locking curves measured at (002) plane and (102) plane according to example embodiments. [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
buffer layer thickness | — | TiN group metal nitride buffer layer |
Au nano-dot width vs Au thickness 50-300 A | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,859,413Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a structure of a conventional light emitting device manufactured using a sapphire substrate. [0014]
FIGS. 2A through 2G are cross-sectional views illustrating a method of growing GaN single crystals according to example embodiments. [0015]
FIGS. 3A through 3 C are microscopic images of metal nano-clusters formed by annealing metal layers formed of Au to thicknesses of 50 A, 1 50A, and 300A, …
FIGS. 4A and 4B are graphs showing various characteristics of metal nano- clusters formed by annealing according to varying thicknesses of metal layers formed …
FIG. 5 is a microscopic image of a metal nano-cluster formed of anodized aluminum oxide (AA O) according to example embodiments. [0018]
FIG. 6 is a microscopic image of a sample of GaN single crystals grown on a silicon substrate according to example embodiments. [0019]
FIGS. 7 and 8 respectively are graphs showing XRD locking curves measured at (002) plane and (102) plane according to example embodiments. [0020]
FIGS. 9A through 9D are cross-sectional views illustrating a method of manufacturing a GaN-based light emitting device, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
The method of claim 7, wherein the metal nano- dots are formed by anodizing an aluminum thin film after depositing the aluminum thin film on the silicon oxide layer. SVG 12073097.05-16-2014.HVJGCNT₇PXXIFW4.CLM18329566.3.969.117.2186.283.svg 0.553 4.057 Drawing Black and white
The method of claim 7, wherein the metal nano- dots are formed by annealing an Au thin film after depositing the Au thin film on the silicon oxide layer. SVG 12073097.05-16-2014.HVJGCNT₇PXXIFW4.CLM18329566.10.56.764.2193.824.svg 0.2 7.123 Drawing Black and white SVG 12073097.05-16-2014.HVJGCNT₇PXXIFW4.CLM18329566.11.64.886.1473.941.svg 0.183 4.697 Drawing Black and white
The method of claim 11, wherein the thickness of the buffer layer is in a range of 1 to 50 nm.
The method of claim 7, wherein the p-electrode is formed on the p-GaN layer, and the n-electrode is formed on a lower surface of the silicon substrate.
The method of claim 7, wherein the p-electrode is formed on the p-GaN layer, and the n-electrode is formed on exposed portions of the n-GaN layer formed by etching portions of the active layer and the p-GaN layer. 15.-20.
canceled
canceled
canceled
canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Au metal layers of thicknesses 50 A, 150 A, and 300 A were deposited and annealed at 600 °C for 1 minute under an air atmosphere to form metal nano-clusters. Nano-dots with width 50–300 nm, height 10–160 nm, gaps 50–200 nm, and density 5–100 ea/μm² were obtained depending on Au thickness.
2 materials1 process step
An aluminum metal layer was deposited and anodized at 10 °C using 0.3 M oxalic acid. A pore widening process was then performed at 20 °C using 5.4 wt% phosphoric acid to form an AAO nano-cluster.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting device on silicon substrate
Materials described outside the worked examples.
GaN
TiN group metal nitride buffer layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 7 and 8 respectively are graphs showing XRD locking curves measured at (002) plane and (102) plane according to example embodiments. [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
buffer layer thickness | — | TiN group metal nitride buffer layer |
Au nano-dot width vs Au thickness 50-300 A | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,859,413Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a structure of a conventional light emitting device manufactured using a sapphire substrate. [0014]
FIGS. 2A through 2G are cross-sectional views illustrating a method of growing GaN single crystals according to example embodiments. [0015]
FIGS. 3A through 3 C are microscopic images of metal nano-clusters formed by annealing metal layers formed of Au to thicknesses of 50 A, 1 50A, and 300A, …
FIGS. 4A and 4B are graphs showing various characteristics of metal nano- clusters formed by annealing according to varying thicknesses of metal layers formed …
FIG. 5 is a microscopic image of a metal nano-cluster formed of anodized aluminum oxide (AA O) according to example embodiments. [0018]
FIG. 6 is a microscopic image of a sample of GaN single crystals grown on a silicon substrate according to example embodiments. [0019]
FIGS. 7 and 8 respectively are graphs showing XRD locking curves measured at (002) plane and (102) plane according to example embodiments. [0020]
FIGS. 9A through 9D are cross-sectional views illustrating a method of manufacturing a GaN-based light emitting device, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
The method of claim 7, wherein the metal nano- dots are formed by anodizing an aluminum thin film after depositing the aluminum thin film on the silicon oxide layer. SVG 12073097.05-16-2014.HVJGCNT₇PXXIFW4.CLM18329566.3.969.117.2186.283.svg 0.553 4.057 Drawing Black and white
The method of claim 7, wherein the metal nano- dots are formed by annealing an Au thin film after depositing the Au thin film on the silicon oxide layer. SVG 12073097.05-16-2014.HVJGCNT₇PXXIFW4.CLM18329566.10.56.764.2193.824.svg 0.2 7.123 Drawing Black and white SVG 12073097.05-16-2014.HVJGCNT₇PXXIFW4.CLM18329566.11.64.886.1473.941.svg 0.183 4.697 Drawing Black and white
The method of claim 11, wherein the thickness of the buffer layer is in a range of 1 to 50 nm.
The method of claim 7, wherein the p-electrode is formed on the p-GaN layer, and the n-electrode is formed on a lower surface of the silicon substrate.
The method of claim 7, wherein the p-electrode is formed on the p-GaN layer, and the n-electrode is formed on exposed portions of the n-GaN layer formed by etching portions of the active layer and the p-GaN layer. 15.-20.
canceled
canceled
canceled
canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Au metal layers of thicknesses 50 A, 150 A, and 300 A were deposited and annealed at 600 °C for 1 minute under an air atmosphere to form metal nano-clusters. Nano-dots with width 50–300 nm, height 10–160 nm, gaps 50–200 nm, and density 5–100 ea/μm² were obtained depending on Au thickness.
2 materials1 process step
An aluminum metal layer was deposited and anodized at 10 °C using 0.3 M oxalic acid. A pore widening process was then performed at 20 °C using 5.4 wt% phosphoric acid to form an AAO nano-cluster.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting device on silicon substrate
Materials described outside the worked examples.
GaN
TiN group metal nitride buffer layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 7 and 8 respectively are graphs showing XRD locking curves measured at (002) plane and (102) plane according to example embodiments. [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
buffer layer thickness | — | TiN group metal nitride buffer layer |
Au nano-dot width vs Au thickness 50-300 A | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,859,413Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a structure of a conventional light emitting device manufactured using a sapphire substrate. [0014]
FIGS. 2A through 2G are cross-sectional views illustrating a method of growing GaN single crystals according to example embodiments. [0015]
FIGS. 3A through 3 C are microscopic images of metal nano-clusters formed by annealing metal layers formed of Au to thicknesses of 50 A, 1 50A, and 300A, …
FIGS. 4A and 4B are graphs showing various characteristics of metal nano- clusters formed by annealing according to varying thicknesses of metal layers formed …
FIG. 5 is a microscopic image of a metal nano-cluster formed of anodized aluminum oxide (AA O) according to example embodiments. [0018]
FIG. 6 is a microscopic image of a sample of GaN single crystals grown on a silicon substrate according to example embodiments. [0019]
FIGS. 7 and 8 respectively are graphs showing XRD locking curves measured at (002) plane and (102) plane according to example embodiments. [0020]
FIGS. 9A through 9D are cross-sectional views illustrating a method of manufacturing a GaN-based light emitting device, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
The method of claim 7, wherein the metal nano- dots are formed by anodizing an aluminum thin film after depositing the aluminum thin film on the silicon oxide layer. SVG 12073097.05-16-2014.HVJGCNT₇PXXIFW4.CLM18329566.3.969.117.2186.283.svg 0.553 4.057 Drawing Black and white
The method of claim 7, wherein the metal nano- dots are formed by annealing an Au thin film after depositing the Au thin film on the silicon oxide layer. SVG 12073097.05-16-2014.HVJGCNT₇PXXIFW4.CLM18329566.10.56.764.2193.824.svg 0.2 7.123 Drawing Black and white SVG 12073097.05-16-2014.HVJGCNT₇PXXIFW4.CLM18329566.11.64.886.1473.941.svg 0.183 4.697 Drawing Black and white
The method of claim 11, wherein the thickness of the buffer layer is in a range of 1 to 50 nm.
The method of claim 7, wherein the p-electrode is formed on the p-GaN layer, and the n-electrode is formed on a lower surface of the silicon substrate.
The method of claim 7, wherein the p-electrode is formed on the p-GaN layer, and the n-electrode is formed on exposed portions of the n-GaN layer formed by etching portions of the active layer and the p-GaN layer. 15.-20.
canceled
canceled
canceled
canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Au metal layers of thicknesses 50 A, 150 A, and 300 A were deposited and annealed at 600 °C for 1 minute under an air atmosphere to form metal nano-clusters. Nano-dots with width 50–300 nm, height 10–160 nm, gaps 50–200 nm, and density 5–100 ea/μm² were obtained depending on Au thickness.
2 materials1 process step
An aluminum metal layer was deposited and anodized at 10 °C using 0.3 M oxalic acid. A pore widening process was then performed at 20 °C using 5.4 wt% phosphoric acid to form an AAO nano-cluster.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting device on silicon substrate
Materials described outside the worked examples.
GaN
TiN group metal nitride buffer layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 7 and 8 respectively are graphs showing XRD locking curves measured at (002) plane and (102) plane according to example embodiments. [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
buffer layer thickness | — | TiN group metal nitride buffer layer |
Au nano-dot width vs Au thickness 50-300 A | — |
Related documents with shared materials, methods, properties, or citations.
silicon oxide/SiO₂ nano-pattern
SiO₂
silicon substrate
Si
AlxTi₁-xN (0≤x≤0.5)
CrxTi₁-xN (0≤x≤0.5)
Au nano-dot height vs Au thickness 50-300 A | — | Au |
Au nano-dot gap vs Au thickness 50-300 A | — | Au |
Au nano-dot density vs Au thickness 50-300 A | — | Au |
Thickness | 1–50 nm | — |
Thickness | 50–300 nm | — |
Thickness | 10–160 nm | — |
Thickness | 50–200 nm | — |
silicon oxide/SiO₂ nano-pattern
SiO₂
silicon substrate
Si
AlxTi₁-xN (0≤x≤0.5)
CrxTi₁-xN (0≤x≤0.5)
Au nano-dot height vs Au thickness 50-300 A | — | Au |
Au nano-dot gap vs Au thickness 50-300 A | — | Au |
Au nano-dot density vs Au thickness 50-300 A | — | Au |
Thickness | 1–50 nm | — |
Thickness | 50–300 nm | — |
Thickness | 10–160 nm | — |
Thickness | 50–200 nm | — |
silicon oxide/SiO₂ nano-pattern
SiO₂
silicon substrate
Si
AlxTi₁-xN (0≤x≤0.5)
CrxTi₁-xN (0≤x≤0.5)
Au nano-dot height vs Au thickness 50-300 A | — | Au |
Au nano-dot gap vs Au thickness 50-300 A | — | Au |
Au nano-dot density vs Au thickness 50-300 A | — | Au |
Thickness | 1–50 nm | — |
Thickness | 50–300 nm | — |
Thickness | 10–160 nm | — |
Thickness | 50–200 nm | — |
silicon oxide/SiO₂ nano-pattern
SiO₂
silicon substrate
Si
AlxTi₁-xN (0≤x≤0.5)
CrxTi₁-xN (0≤x≤0.5)
Au nano-dot height vs Au thickness 50-300 A | — | Au |
Au nano-dot gap vs Au thickness 50-300 A | — | Au |
Au nano-dot density vs Au thickness 50-300 A | — | Au |
Thickness | 1–50 nm | — |
Thickness | 50–300 nm | — |
Thickness | 10–160 nm | — |
Thickness | 50–200 nm | — |