Patent
Atlas literature
Patent
US 12,408,491 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A to 1J show, schematically and in cross section, various steps of a method for manufacturing an RGB matrix according to a first particular variant …
FIG. 2 shows, schematically and in cross section, an LED structure according to a particular embodiment of the inven- tion.
FIG. 3 shows, schematically and in cross section, an LED 50 structure according to another particular embodiment of the invention.
FIG. 4 shows, schematically and in cross section, an LED structure according to another particular embodiment of the invention. 55
FIGS. 5A to 5F show, schematically and in cross section, various steps of a method for manufacturing an RGB matrix according to a second particular variant …
FIGS. 6A and 6B show, schematically and in three dimen- 60 sions, steps of etching series of mesas, according to a particular implementation of the second …
FIG. 7 shows, schematically and in plan view, the elec- trical interconnections of the series of mesas, according to a 65 particular implementation of the …
FIG. 8 shows, schematically and in cross section, an LED structure according to another particular embodiment of the invention. The various parts shown in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A native emission matrix comprising: a base structure comprising successively a substrate, a layer of non-intentionally doped GaN, a layer of doped In(x)GaN with x from 0 to 8% and an epitaxial regrowth layer of not-intentionally doped In(x)GaN with x from 0 to 8%, a first mesa formed in the base structure, the first mesa comprising the layer of doped In(x)GaN, and a part of the thickness of the layer of non-intentionally doped B₂ GaN, the first mesa being covered by a first LED structure emitting at a first wavelength, a second mesa formed in the base structure, the second mesa comprising the epitaxial regrowth layer of not-intentionally doped In(x)GaN and a part of the thick-ness of the layer of doped In(x)GaN that is porosified, the second mesa being covered by a second LED structure emitting at a second wavelength, wherein the layer of non-intentionally doped GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN have dopant concentrations preventing them from being porosified.
The matrix according to claim 1, wherein it comprises a third mesa formed in the base structure and covered by a third LED structure, emitting at a third wavelength.
Layer stacks claimed or described, ordered top of device to substrate.
native emission matrix (RGB micro-LED array)
Materials described outside the worked examples.
not-intentionally doped GaN
GaN
doped In(x)GaN
InxGa(1-x)N
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
nid GaN layer thickness | 100–4000 nm | GaN |
doped In(x)GaN layer thickness | 100–800 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,408,491 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A to 1J show, schematically and in cross section, various steps of a method for manufacturing an RGB matrix according to a first particular variant …
FIG. 2 shows, schematically and in cross section, an LED structure according to a particular embodiment of the inven- tion.
FIG. 3 shows, schematically and in cross section, an LED 50 structure according to another particular embodiment of the invention.
FIG. 4 shows, schematically and in cross section, an LED structure according to another particular embodiment of the invention. 55
FIGS. 5A to 5F show, schematically and in cross section, various steps of a method for manufacturing an RGB matrix according to a second particular variant …
FIGS. 6A and 6B show, schematically and in three dimen- 60 sions, steps of etching series of mesas, according to a particular implementation of the second …
FIG. 7 shows, schematically and in plan view, the elec- trical interconnections of the series of mesas, according to a 65 particular implementation of the …
FIG. 8 shows, schematically and in cross section, an LED structure according to another particular embodiment of the invention. The various parts shown in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A native emission matrix comprising: a base structure comprising successively a substrate, a layer of non-intentionally doped GaN, a layer of doped In(x)GaN with x from 0 to 8% and an epitaxial regrowth layer of not-intentionally doped In(x)GaN with x from 0 to 8%, a first mesa formed in the base structure, the first mesa comprising the layer of doped In(x)GaN, and a part of the thickness of the layer of non-intentionally doped B₂ GaN, the first mesa being covered by a first LED structure emitting at a first wavelength, a second mesa formed in the base structure, the second mesa comprising the epitaxial regrowth layer of not-intentionally doped In(x)GaN and a part of the thick-ness of the layer of doped In(x)GaN that is porosified, the second mesa being covered by a second LED structure emitting at a second wavelength, wherein the layer of non-intentionally doped GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN have dopant concentrations preventing them from being porosified.
The matrix according to claim 1, wherein it comprises a third mesa formed in the base structure and covered by a third LED structure, emitting at a third wavelength.
Layer stacks claimed or described, ordered top of device to substrate.
native emission matrix (RGB micro-LED array)
Materials described outside the worked examples.
not-intentionally doped GaN
GaN
doped In(x)GaN
InxGa(1-x)N
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
nid GaN layer thickness | 100–4000 nm | GaN |
doped In(x)GaN layer thickness | 100–800 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,408,491 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A to 1J show, schematically and in cross section, various steps of a method for manufacturing an RGB matrix according to a first particular variant …
FIG. 2 shows, schematically and in cross section, an LED structure according to a particular embodiment of the inven- tion.
FIG. 3 shows, schematically and in cross section, an LED 50 structure according to another particular embodiment of the invention.
FIG. 4 shows, schematically and in cross section, an LED structure according to another particular embodiment of the invention. 55
FIGS. 5A to 5F show, schematically and in cross section, various steps of a method for manufacturing an RGB matrix according to a second particular variant …
FIGS. 6A and 6B show, schematically and in three dimen- 60 sions, steps of etching series of mesas, according to a particular implementation of the second …
FIG. 7 shows, schematically and in plan view, the elec- trical interconnections of the series of mesas, according to a 65 particular implementation of the …
FIG. 8 shows, schematically and in cross section, an LED structure according to another particular embodiment of the invention. The various parts shown in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A native emission matrix comprising: a base structure comprising successively a substrate, a layer of non-intentionally doped GaN, a layer of doped In(x)GaN with x from 0 to 8% and an epitaxial regrowth layer of not-intentionally doped In(x)GaN with x from 0 to 8%, a first mesa formed in the base structure, the first mesa comprising the layer of doped In(x)GaN, and a part of the thickness of the layer of non-intentionally doped B₂ GaN, the first mesa being covered by a first LED structure emitting at a first wavelength, a second mesa formed in the base structure, the second mesa comprising the epitaxial regrowth layer of not-intentionally doped In(x)GaN and a part of the thick-ness of the layer of doped In(x)GaN that is porosified, the second mesa being covered by a second LED structure emitting at a second wavelength, wherein the layer of non-intentionally doped GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN have dopant concentrations preventing them from being porosified.
The matrix according to claim 1, wherein it comprises a third mesa formed in the base structure and covered by a third LED structure, emitting at a third wavelength.
Layer stacks claimed or described, ordered top of device to substrate.
native emission matrix (RGB micro-LED array)
Materials described outside the worked examples.
not-intentionally doped GaN
GaN
doped In(x)GaN
InxGa(1-x)N
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
nid GaN layer thickness | 100–4000 nm | GaN |
doped In(x)GaN layer thickness | 100–800 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,408,491 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A to 1J show, schematically and in cross section, various steps of a method for manufacturing an RGB matrix according to a first particular variant …
FIG. 2 shows, schematically and in cross section, an LED structure according to a particular embodiment of the inven- tion.
FIG. 3 shows, schematically and in cross section, an LED 50 structure according to another particular embodiment of the invention.
FIG. 4 shows, schematically and in cross section, an LED structure according to another particular embodiment of the invention. 55
FIGS. 5A to 5F show, schematically and in cross section, various steps of a method for manufacturing an RGB matrix according to a second particular variant …
FIGS. 6A and 6B show, schematically and in three dimen- 60 sions, steps of etching series of mesas, according to a particular implementation of the second …
FIG. 7 shows, schematically and in plan view, the elec- trical interconnections of the series of mesas, according to a 65 particular implementation of the …
FIG. 8 shows, schematically and in cross section, an LED structure according to another particular embodiment of the invention. The various parts shown in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A native emission matrix comprising: a base structure comprising successively a substrate, a layer of non-intentionally doped GaN, a layer of doped In(x)GaN with x from 0 to 8% and an epitaxial regrowth layer of not-intentionally doped In(x)GaN with x from 0 to 8%, a first mesa formed in the base structure, the first mesa comprising the layer of doped In(x)GaN, and a part of the thickness of the layer of non-intentionally doped B₂ GaN, the first mesa being covered by a first LED structure emitting at a first wavelength, a second mesa formed in the base structure, the second mesa comprising the epitaxial regrowth layer of not-intentionally doped In(x)GaN and a part of the thick-ness of the layer of doped In(x)GaN that is porosified, the second mesa being covered by a second LED structure emitting at a second wavelength, wherein the layer of non-intentionally doped GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN have dopant concentrations preventing them from being porosified.
The matrix according to claim 1, wherein it comprises a third mesa formed in the base structure and covered by a third LED structure, emitting at a third wavelength.
Layer stacks claimed or described, ordered top of device to substrate.
native emission matrix (RGB micro-LED array)
Materials described outside the worked examples.
not-intentionally doped GaN
GaN
doped In(x)GaN
InxGa(1-x)N
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
nid GaN layer thickness | 100–4000 nm | GaN |
doped In(x)GaN layer thickness | 100–800 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
SiO₂ mask
SiO₂
SiN mask
SiNx
nid In(x)GaN epitaxial regrowth layer thickness | 10–200 nm | InxGa(1-x)N |
In fraction x in doped In(x)GaN | 0–8 % | InxGa(1-x)N |
In fraction x in nid In(x)GaN regrowth layer | 0–8 % | InxGa(1-x)N |
Thickness | 300000–1000000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 800–1000 nm | — |
Thickness | 500–500000 nm | — |
Thickness | 50–20000 nm | — |
Voltage | 1–100 V | — |
Thickness | 30–70 nm | — |
Thickness | 3.205–3.21 Å | — |
Thickness | 3.184–3.189 Å | — |
Thickness | ≤ 1 µm | — |
Cited non-patent literature · 2
SiO₂ mask
SiO₂
SiN mask
SiNx
nid In(x)GaN epitaxial regrowth layer thickness | 10–200 nm | InxGa(1-x)N |
In fraction x in doped In(x)GaN | 0–8 % | InxGa(1-x)N |
In fraction x in nid In(x)GaN regrowth layer | 0–8 % | InxGa(1-x)N |
Thickness | 300000–1000000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 800–1000 nm | — |
Thickness | 500–500000 nm | — |
Thickness | 50–20000 nm | — |
Voltage | 1–100 V | — |
Thickness | 30–70 nm | — |
Thickness | 3.205–3.21 Å | — |
Thickness | 3.184–3.189 Å | — |
Thickness | ≤ 1 µm | — |
Cited non-patent literature · 2
SiO₂ mask
SiO₂
SiN mask
SiNx
nid In(x)GaN epitaxial regrowth layer thickness | 10–200 nm | InxGa(1-x)N |
In fraction x in doped In(x)GaN | 0–8 % | InxGa(1-x)N |
In fraction x in nid In(x)GaN regrowth layer | 0–8 % | InxGa(1-x)N |
Thickness | 300000–1000000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 800–1000 nm | — |
Thickness | 500–500000 nm | — |
Thickness | 50–20000 nm | — |
Voltage | 1–100 V | — |
Thickness | 30–70 nm | — |
Thickness | 3.205–3.21 Å | — |
Thickness | 3.184–3.189 Å | — |
Thickness | ≤ 1 µm | — |
Cited non-patent literature · 2
SiO₂ mask
SiO₂
SiN mask
SiNx
nid In(x)GaN epitaxial regrowth layer thickness | 10–200 nm | InxGa(1-x)N |
In fraction x in doped In(x)GaN | 0–8 % | InxGa(1-x)N |
In fraction x in nid In(x)GaN regrowth layer | 0–8 % | InxGa(1-x)N |
Thickness | 300000–1000000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 800–1000 nm | — |
Thickness | 500–500000 nm | — |
Thickness | 50–20000 nm | — |
Voltage | 1–100 V | — |
Thickness | 30–70 nm | — |
Thickness | 3.205–3.21 Å | — |
Thickness | 3.184–3.189 Å | — |
Thickness | ≤ 1 µm | — |
Cited non-patent literature · 2
