Patent
US 9,276,070SEMICONDUCTOR STRUCTURES INCLUDING STACKS OF INDIUM GALLIUM NITRIDE LAYERS
Christophe Figuet, Pierre Tomasini
US
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US 9,276,070Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph that may be used to approximate the relaxed lattice parameter of InGaN as a f u nction of indium content therein; [0017]
FIG. 2 is a simplified, schematically illustrated cross-sectional side view of a substrate on or over which a I IIV semiconductor material may be deposited; …
FIG. 3 is a simplified, schematically illustrated cross-sectional side view of a semiconductor structure that includes a first I IIV semiconductor material …
FIG. 4, illustrating another embodiment of a semiconductor structure that includes a plurality of alternating layers of binary and ternary I IIV semiconductor …
FIG. 5 is a simplified, schematically illustrated perspective view of a portion of the semiconductor structure of
FIG. 6 is a graph illustrating the observed variation in average width of V-pits formed in ternary I IIV semiconductor material as a f u nction of variation in …
FIG. 7 is a simplified, schematically illustrated cross-sectional side view like that of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
was previously canceled. Claim 6 has been amended herein. All of the pending canceled
The semiconductor structure of claim 1, further comprising a substrate, the stack of layers of III -nitride material disposed over the substrate.
The semiconductor structure of claim 10, further comprising a layer of GaN disposed between the substrate and the plurality of layers of
The semiconductor structure of claim 1, wherein at least one layer of In XGa(1 X) N of the plurality has an average in-plane lattice parameter of 3.207 A or more. 3 Serial No. 14/250,096
The semiconductor structure of claim 13, wherein each layer of In xGai.X) N of the plurality has an average in-plane lattice parameter of 3.207 A or more.
The semiconductor structure of claim 1, wherein each layer of In xGa(li,) N of the plurality has a layer thickness of between about two nanometers (2 nm) and about thirty nanometers (30 nm).
The semiconductor structure of claim 1, wherein the semiconductor structure is a die or wafer.
A light-emitting device including the semiconductor structure of claim 1.
The light-emitting device of claim 17, wherein the light- emitting device is a light-emitting diode (LED).
A light-receiving device including the semiconductor structure of claim 1.
The light-receiving device of claim 19, wherein the light- receiving device is a solar cell. 4
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with stack of InGaN layers
light-emitting device/LED
light-receiving device/solar cell
Materials described outside the worked examples.
III-nitride material stack
indium gallium nitride
InxGa(1-x)N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a graph illustrating the observed variation in average width of V-pits formed in ternary I IIV semiconductor material as a f u nction of variation in …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Xrd Lattice Constant A | 3.207 Angstrom | InxGa(1-x)N |
Layer Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,276,070Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph that may be used to approximate the relaxed lattice parameter of InGaN as a f u nction of indium content therein; [0017]
FIG. 2 is a simplified, schematically illustrated cross-sectional side view of a substrate on or over which a I IIV semiconductor material may be deposited; …
FIG. 3 is a simplified, schematically illustrated cross-sectional side view of a semiconductor structure that includes a first I IIV semiconductor material …
FIG. 4, illustrating another embodiment of a semiconductor structure that includes a plurality of alternating layers of binary and ternary I IIV semiconductor …
FIG. 5 is a simplified, schematically illustrated perspective view of a portion of the semiconductor structure of
FIG. 6 is a graph illustrating the observed variation in average width of V-pits formed in ternary I IIV semiconductor material as a f u nction of variation in …
FIG. 7 is a simplified, schematically illustrated cross-sectional side view like that of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
was previously canceled. Claim 6 has been amended herein. All of the pending canceled
The semiconductor structure of claim 1, further comprising a substrate, the stack of layers of III -nitride material disposed over the substrate.
The semiconductor structure of claim 10, further comprising a layer of GaN disposed between the substrate and the plurality of layers of
The semiconductor structure of claim 1, wherein at least one layer of In XGa(1 X) N of the plurality has an average in-plane lattice parameter of 3.207 A or more. 3 Serial No. 14/250,096
The semiconductor structure of claim 13, wherein each layer of In xGai.X) N of the plurality has an average in-plane lattice parameter of 3.207 A or more.
The semiconductor structure of claim 1, wherein each layer of In xGa(li,) N of the plurality has a layer thickness of between about two nanometers (2 nm) and about thirty nanometers (30 nm).
The semiconductor structure of claim 1, wherein the semiconductor structure is a die or wafer.
A light-emitting device including the semiconductor structure of claim 1.
The light-emitting device of claim 17, wherein the light- emitting device is a light-emitting diode (LED).
A light-receiving device including the semiconductor structure of claim 1.
The light-receiving device of claim 19, wherein the light- receiving device is a solar cell. 4
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with stack of InGaN layers
light-emitting device/LED
light-receiving device/solar cell
Materials described outside the worked examples.
III-nitride material stack
indium gallium nitride
InxGa(1-x)N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a graph illustrating the observed variation in average width of V-pits formed in ternary I IIV semiconductor material as a f u nction of variation in …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Xrd Lattice Constant A | 3.207 Angstrom | InxGa(1-x)N |
Layer Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,276,070Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph that may be used to approximate the relaxed lattice parameter of InGaN as a f u nction of indium content therein; [0017]
FIG. 2 is a simplified, schematically illustrated cross-sectional side view of a substrate on or over which a I IIV semiconductor material may be deposited; …
FIG. 3 is a simplified, schematically illustrated cross-sectional side view of a semiconductor structure that includes a first I IIV semiconductor material …
FIG. 4, illustrating another embodiment of a semiconductor structure that includes a plurality of alternating layers of binary and ternary I IIV semiconductor …
FIG. 5 is a simplified, schematically illustrated perspective view of a portion of the semiconductor structure of
FIG. 6 is a graph illustrating the observed variation in average width of V-pits formed in ternary I IIV semiconductor material as a f u nction of variation in …
FIG. 7 is a simplified, schematically illustrated cross-sectional side view like that of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
was previously canceled. Claim 6 has been amended herein. All of the pending canceled
The semiconductor structure of claim 1, further comprising a substrate, the stack of layers of III -nitride material disposed over the substrate.
The semiconductor structure of claim 10, further comprising a layer of GaN disposed between the substrate and the plurality of layers of
The semiconductor structure of claim 1, wherein at least one layer of In XGa(1 X) N of the plurality has an average in-plane lattice parameter of 3.207 A or more. 3 Serial No. 14/250,096
The semiconductor structure of claim 13, wherein each layer of In xGai.X) N of the plurality has an average in-plane lattice parameter of 3.207 A or more.
The semiconductor structure of claim 1, wherein each layer of In xGa(li,) N of the plurality has a layer thickness of between about two nanometers (2 nm) and about thirty nanometers (30 nm).
The semiconductor structure of claim 1, wherein the semiconductor structure is a die or wafer.
A light-emitting device including the semiconductor structure of claim 1.
The light-emitting device of claim 17, wherein the light- emitting device is a light-emitting diode (LED).
A light-receiving device including the semiconductor structure of claim 1.
The light-receiving device of claim 19, wherein the light- receiving device is a solar cell. 4
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with stack of InGaN layers
light-emitting device/LED
light-receiving device/solar cell
Materials described outside the worked examples.
III-nitride material stack
indium gallium nitride
InxGa(1-x)N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a graph illustrating the observed variation in average width of V-pits formed in ternary I IIV semiconductor material as a f u nction of variation in …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Xrd Lattice Constant A | 3.207 Angstrom | InxGa(1-x)N |
Layer Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,276,070Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph that may be used to approximate the relaxed lattice parameter of InGaN as a f u nction of indium content therein; [0017]
FIG. 2 is a simplified, schematically illustrated cross-sectional side view of a substrate on or over which a I IIV semiconductor material may be deposited; …
FIG. 3 is a simplified, schematically illustrated cross-sectional side view of a semiconductor structure that includes a first I IIV semiconductor material …
FIG. 4, illustrating another embodiment of a semiconductor structure that includes a plurality of alternating layers of binary and ternary I IIV semiconductor …
FIG. 5 is a simplified, schematically illustrated perspective view of a portion of the semiconductor structure of
FIG. 6 is a graph illustrating the observed variation in average width of V-pits formed in ternary I IIV semiconductor material as a f u nction of variation in …
FIG. 7 is a simplified, schematically illustrated cross-sectional side view like that of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
was previously canceled. Claim 6 has been amended herein. All of the pending canceled
The semiconductor structure of claim 1, further comprising a substrate, the stack of layers of III -nitride material disposed over the substrate.
The semiconductor structure of claim 10, further comprising a layer of GaN disposed between the substrate and the plurality of layers of
The semiconductor structure of claim 1, wherein at least one layer of In XGa(1 X) N of the plurality has an average in-plane lattice parameter of 3.207 A or more. 3 Serial No. 14/250,096
The semiconductor structure of claim 13, wherein each layer of In xGai.X) N of the plurality has an average in-plane lattice parameter of 3.207 A or more.
The semiconductor structure of claim 1, wherein each layer of In xGa(li,) N of the plurality has a layer thickness of between about two nanometers (2 nm) and about thirty nanometers (30 nm).
The semiconductor structure of claim 1, wherein the semiconductor structure is a die or wafer.
A light-emitting device including the semiconductor structure of claim 1.
The light-emitting device of claim 17, wherein the light- emitting device is a light-emitting diode (LED).
A light-receiving device including the semiconductor structure of claim 1.
The light-receiving device of claim 19, wherein the light- receiving device is a solar cell. 4
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with stack of InGaN layers
light-emitting device/LED
light-receiving device/solar cell
Materials described outside the worked examples.
III-nitride material stack
indium gallium nitride
InxGa(1-x)N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a graph illustrating the observed variation in average width of V-pits formed in ternary I IIV semiconductor material as a f u nction of variation in …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Xrd Lattice Constant A | 3.207 Angstrom | InxGa(1-x)N |
Layer Thickness |
Related documents with shared materials, methods, properties, or citations.
GaN
ternary III-nitride material
nitrogen precursor
Group III precursors
| — |
InxGa(1-x)N |
Layer Thickness | — | ternary III-nitride material |
V Pit Average Width | — | ternary III-nitride material |
Relaxed Lattice Parameter Mismatch | — | InxGa(1-x)N |
Temperature | 750–850 °C | — |
Temperature | 500–1000 °C | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 150 nm | — |
GaN
ternary III-nitride material
nitrogen precursor
Group III precursors
| — |
InxGa(1-x)N |
Layer Thickness | — | ternary III-nitride material |
V Pit Average Width | — | ternary III-nitride material |
Relaxed Lattice Parameter Mismatch | — | InxGa(1-x)N |
Temperature | 750–850 °C | — |
Temperature | 500–1000 °C | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 150 nm | — |
GaN
ternary III-nitride material
nitrogen precursor
Group III precursors
| — |
InxGa(1-x)N |
Layer Thickness | — | ternary III-nitride material |
V Pit Average Width | — | ternary III-nitride material |
Relaxed Lattice Parameter Mismatch | — | InxGa(1-x)N |
Temperature | 750–850 °C | — |
Temperature | 500–1000 °C | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 150 nm | — |
GaN
ternary III-nitride material
nitrogen precursor
Group III precursors
| — |
InxGa(1-x)N |
Layer Thickness | — | ternary III-nitride material |
V Pit Average Width | — | ternary III-nitride material |
Relaxed Lattice Parameter Mismatch | — | InxGa(1-x)N |
Temperature | 750–850 °C | — |
Temperature | 500–1000 °C | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 150 nm | — |