Patent
US 8,686,450OF THE INVENTION
Jae Hoon Lee
US
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Patent
Atlas literature
Patent
US 8,686,450Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A vertically-structured GaN-based light emitting diode, comprising: a structure supporting layer: a p-type electrode that 4s-fermed disposed on the an upper or lower surface of the structure supporting layer; a p-type GaN layer that 4frmed disposed on the structure supporting layer on which the p- type electrode is fo r med disposed; an active layer that -is-formed disposed on the p-type GaN layer; an n-type GaN layer that f4s rme d disposed on the active layer and i s doped with n-type impurities, an undoped GaN layer that -is-fermed disposed on the n-type GaN layer se -a s to cover an entire upper surface of the n-type GaN layer, and on which a plurality of concave patterns are periodically f orm ed defined, and an n-type electrode that -is-form ed disposed on the undoped GaN layer, where in a do pin g concentration of the n-type GaN la yer gradually increases from a portion thereof where the n-type GaN la y er is in contact with the undoped GaN layer. DMU S 44287994- 1 069576 0665 2 SVG 11892445.10-23-2013.HN₄ZZ₄BZPXXIFW3.CLM10892350.1.287.258.2236.344.svg 0.287 6.497 Chemistry Black and white
The vertically-structured GaN-based light emitting diode accord in g to claim 14, wherein[[,]]. when the p-type electrode is fe red disposed on the lower surface of the structure supporting layer, the structure supporting layer i s-emed-of inc ludes any one selected from [[a]] the group eemposed-o f consistin g of a conductive substrate and a plated layer, and when the p-type electrode is f orm ed disposed on the upper surface of the structure supporting layer, the structure supporting layer i srmed-ef includes any one selected from [[a]] the group e em posed -e f consisting of a silicon substrate and a plated layer.
The vertically-structured GaN-based light emitting diode according to claim 14, wherein the concave patterns with a hemispheric shape are defined such formed-s that the depth thereof ranges from 0.1 to 5 p m, the diameter thereof ranges from 0 5 to 5 p m, and the pattern period thereof ranges from 0.5 to 5 pm.
The vertically-structured GaN-based light emitting diode according to claim 14, where in the thickness of the undoped Ga N layer ranges from 0.1 to 1 pm.
The vertically-structured GaN-based li ght emitt in g diode according to claim 14 further including a transparent conduct in g oxide (TCO) layer t hat -s-formed disposed on the undoped
Layer stacks claimed or described, ordered top of device to substrate.
vertically-structured GaN-based light emitting diode
Materials described outside the worked examples.
p-type GaN layer
GaN
active layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0.5–1.5 hour | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,686,450Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A vertically-structured GaN-based light emitting diode, comprising: a structure supporting layer: a p-type electrode that 4s-fermed disposed on the an upper or lower surface of the structure supporting layer; a p-type GaN layer that 4frmed disposed on the structure supporting layer on which the p- type electrode is fo r med disposed; an active layer that -is-formed disposed on the p-type GaN layer; an n-type GaN layer that f4s rme d disposed on the active layer and i s doped with n-type impurities, an undoped GaN layer that -is-fermed disposed on the n-type GaN layer se -a s to cover an entire upper surface of the n-type GaN layer, and on which a plurality of concave patterns are periodically f orm ed defined, and an n-type electrode that -is-form ed disposed on the undoped GaN layer, where in a do pin g concentration of the n-type GaN la yer gradually increases from a portion thereof where the n-type GaN la y er is in contact with the undoped GaN layer. DMU S 44287994- 1 069576 0665 2 SVG 11892445.10-23-2013.HN₄ZZ₄BZPXXIFW3.CLM10892350.1.287.258.2236.344.svg 0.287 6.497 Chemistry Black and white
The vertically-structured GaN-based light emitting diode accord in g to claim 14, wherein[[,]]. when the p-type electrode is fe red disposed on the lower surface of the structure supporting layer, the structure supporting layer i s-emed-of inc ludes any one selected from [[a]] the group eemposed-o f consistin g of a conductive substrate and a plated layer, and when the p-type electrode is f orm ed disposed on the upper surface of the structure supporting layer, the structure supporting layer i srmed-ef includes any one selected from [[a]] the group e em posed -e f consisting of a silicon substrate and a plated layer.
The vertically-structured GaN-based light emitting diode according to claim 14, wherein the concave patterns with a hemispheric shape are defined such formed-s that the depth thereof ranges from 0.1 to 5 p m, the diameter thereof ranges from 0 5 to 5 p m, and the pattern period thereof ranges from 0.5 to 5 pm.
The vertically-structured GaN-based light emitting diode according to claim 14, where in the thickness of the undoped Ga N layer ranges from 0.1 to 1 pm.
The vertically-structured GaN-based li ght emitt in g diode according to claim 14 further including a transparent conduct in g oxide (TCO) layer t hat -s-formed disposed on the undoped
Layer stacks claimed or described, ordered top of device to substrate.
vertically-structured GaN-based light emitting diode
Materials described outside the worked examples.
p-type GaN layer
GaN
active layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0.5–1.5 hour | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,686,450Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A vertically-structured GaN-based light emitting diode, comprising: a structure supporting layer: a p-type electrode that 4s-fermed disposed on the an upper or lower surface of the structure supporting layer; a p-type GaN layer that 4frmed disposed on the structure supporting layer on which the p- type electrode is fo r med disposed; an active layer that -is-formed disposed on the p-type GaN layer; an n-type GaN layer that f4s rme d disposed on the active layer and i s doped with n-type impurities, an undoped GaN layer that -is-fermed disposed on the n-type GaN layer se -a s to cover an entire upper surface of the n-type GaN layer, and on which a plurality of concave patterns are periodically f orm ed defined, and an n-type electrode that -is-form ed disposed on the undoped GaN layer, where in a do pin g concentration of the n-type GaN la yer gradually increases from a portion thereof where the n-type GaN la y er is in contact with the undoped GaN layer. DMU S 44287994- 1 069576 0665 2 SVG 11892445.10-23-2013.HN₄ZZ₄BZPXXIFW3.CLM10892350.1.287.258.2236.344.svg 0.287 6.497 Chemistry Black and white
The vertically-structured GaN-based light emitting diode accord in g to claim 14, wherein[[,]]. when the p-type electrode is fe red disposed on the lower surface of the structure supporting layer, the structure supporting layer i s-emed-of inc ludes any one selected from [[a]] the group eemposed-o f consistin g of a conductive substrate and a plated layer, and when the p-type electrode is f orm ed disposed on the upper surface of the structure supporting layer, the structure supporting layer i srmed-ef includes any one selected from [[a]] the group e em posed -e f consisting of a silicon substrate and a plated layer.
The vertically-structured GaN-based light emitting diode according to claim 14, wherein the concave patterns with a hemispheric shape are defined such formed-s that the depth thereof ranges from 0.1 to 5 p m, the diameter thereof ranges from 0 5 to 5 p m, and the pattern period thereof ranges from 0.5 to 5 pm.
The vertically-structured GaN-based light emitting diode according to claim 14, where in the thickness of the undoped Ga N layer ranges from 0.1 to 1 pm.
The vertically-structured GaN-based li ght emitt in g diode according to claim 14 further including a transparent conduct in g oxide (TCO) layer t hat -s-formed disposed on the undoped
Layer stacks claimed or described, ordered top of device to substrate.
vertically-structured GaN-based light emitting diode
Materials described outside the worked examples.
p-type GaN layer
GaN
active layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0.5–1.5 hour | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,686,450Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A vertically-structured GaN-based light emitting diode, comprising: a structure supporting layer: a p-type electrode that 4s-fermed disposed on the an upper or lower surface of the structure supporting layer; a p-type GaN layer that 4frmed disposed on the structure supporting layer on which the p- type electrode is fo r med disposed; an active layer that -is-formed disposed on the p-type GaN layer; an n-type GaN layer that f4s rme d disposed on the active layer and i s doped with n-type impurities, an undoped GaN layer that -is-fermed disposed on the n-type GaN layer se -a s to cover an entire upper surface of the n-type GaN layer, and on which a plurality of concave patterns are periodically f orm ed defined, and an n-type electrode that -is-form ed disposed on the undoped GaN layer, where in a do pin g concentration of the n-type GaN la yer gradually increases from a portion thereof where the n-type GaN la y er is in contact with the undoped GaN layer. DMU S 44287994- 1 069576 0665 2 SVG 11892445.10-23-2013.HN₄ZZ₄BZPXXIFW3.CLM10892350.1.287.258.2236.344.svg 0.287 6.497 Chemistry Black and white
The vertically-structured GaN-based light emitting diode accord in g to claim 14, wherein[[,]]. when the p-type electrode is fe red disposed on the lower surface of the structure supporting layer, the structure supporting layer i s-emed-of inc ludes any one selected from [[a]] the group eemposed-o f consistin g of a conductive substrate and a plated layer, and when the p-type electrode is f orm ed disposed on the upper surface of the structure supporting layer, the structure supporting layer i srmed-ef includes any one selected from [[a]] the group e em posed -e f consisting of a silicon substrate and a plated layer.
The vertically-structured GaN-based light emitting diode according to claim 14, wherein the concave patterns with a hemispheric shape are defined such formed-s that the depth thereof ranges from 0.1 to 5 p m, the diameter thereof ranges from 0 5 to 5 p m, and the pattern period thereof ranges from 0.5 to 5 pm.
The vertically-structured GaN-based light emitting diode according to claim 14, where in the thickness of the undoped Ga N layer ranges from 0.1 to 1 pm.
The vertically-structured GaN-based li ght emitt in g diode according to claim 14 further including a transparent conduct in g oxide (TCO) layer t hat -s-formed disposed on the undoped
Layer stacks claimed or described, ordered top of device to substrate.
vertically-structured GaN-based light emitting diode
Materials described outside the worked examples.
p-type GaN layer
GaN
active layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0.5–1.5 hour | — |
Related documents with shared materials, methods, properties, or citations.
structure supporting layer
transparent conducting oxide (TCO) layer
compound layer (SiO₂ or SiNx)
structure supporting layer
transparent conducting oxide (TCO) layer
compound layer (SiO₂ or SiNx)
structure supporting layer
transparent conducting oxide (TCO) layer
compound layer (SiO₂ or SiNx)
structure supporting layer
transparent conducting oxide (TCO) layer
compound layer (SiO₂ or SiNx)