Patent
US 8,355,422ENHANCED PLANARITY IN GaN EDGE EMITTING LASERS
Rajaram Bhat
US
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Patent
Atlas literature
Patent
US 8,355,422Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a GaN edge emitting laser comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N- type cladding layer, and a P-type cladding layer, wherein: the GaN substrate defines a 2021 crystal growth plane and a glide plane; the N-side waveguiding layer comprises a GaN-based superlattice or bulk waveguiding layer; the P-side waveguiding layer comprises a GaN-based superlattice or bulk waveguiding layer; the active region is interposed between and extends substantially parallel to the N-side SL waveguiding layer and the P-side SL waveguiding layer; the N-type cladding layer is interposed between the N-side waveguiding layer and the GaN substrate; the P-type cladding layer is formed over the P-side waveguiding layer; the strain-thickness product of the N-side SL waveguiding layer exceeds its strain relaxation critical value and the strain-thickness product of the N-type cladding layer exceeds its strain relaxation critical value such that resulting strain relaxation is mono-directional along the glide plane of the GaN substrate; and the N-side and P-side GaN-based waveguiding layers are grown at a growth rate that exceeds approximately 0.09 nm/s to optimize waveguide planarity.
A method of fabricating a GaN edge emitting laser as claimed in claim 1 wherein the growth rate at which the N-side and P-side GaN-based waveguiding layers are grown is approximately 0.095 nm/s.
A method of fabricating a GaN edge emitting laser as claimed in claim 1 wherein the growth rate at which the N-side and P-side GaN-based waveguiding layers are grown is between approximately 0.09 nm/s and approximately 0.10 nm/s.
Docket No.-SP₁ 0 -165A 4. A method of fabricating a GaN edge emitting laser as claimed in claim 1 wherein: the N-side waveguiding layer comprises a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layer; the P-side waveguiding layer comprises a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layer; and the superlattice layers of the N-side and P-side SL waveguiding layers are grown to define respective layer thicknesses that are optimized for waveguide planarity, the layer thicknesses being between approximately 1 nm and approximately 5 nm.
Layer stacks claimed or described, ordered top of device to substrate.
GaN edge emitting laser
Materials described outside the worked examples.
semi-polar GaN substrate
GaN
GaN-based N-side waveguiding layer (superlattice or bulk)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
SL waveguiding layer individual layer thickness (optimized for planarity) | 1–5 nm | GaInN/GaN superlattice waveguiding layer |
Active region quantum well layer thickness | 1–5 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,355,422Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a GaN edge emitting laser comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N- type cladding layer, and a P-type cladding layer, wherein: the GaN substrate defines a 2021 crystal growth plane and a glide plane; the N-side waveguiding layer comprises a GaN-based superlattice or bulk waveguiding layer; the P-side waveguiding layer comprises a GaN-based superlattice or bulk waveguiding layer; the active region is interposed between and extends substantially parallel to the N-side SL waveguiding layer and the P-side SL waveguiding layer; the N-type cladding layer is interposed between the N-side waveguiding layer and the GaN substrate; the P-type cladding layer is formed over the P-side waveguiding layer; the strain-thickness product of the N-side SL waveguiding layer exceeds its strain relaxation critical value and the strain-thickness product of the N-type cladding layer exceeds its strain relaxation critical value such that resulting strain relaxation is mono-directional along the glide plane of the GaN substrate; and the N-side and P-side GaN-based waveguiding layers are grown at a growth rate that exceeds approximately 0.09 nm/s to optimize waveguide planarity.
A method of fabricating a GaN edge emitting laser as claimed in claim 1 wherein the growth rate at which the N-side and P-side GaN-based waveguiding layers are grown is approximately 0.095 nm/s.
A method of fabricating a GaN edge emitting laser as claimed in claim 1 wherein the growth rate at which the N-side and P-side GaN-based waveguiding layers are grown is between approximately 0.09 nm/s and approximately 0.10 nm/s.
Docket No.-SP₁ 0 -165A 4. A method of fabricating a GaN edge emitting laser as claimed in claim 1 wherein: the N-side waveguiding layer comprises a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layer; the P-side waveguiding layer comprises a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layer; and the superlattice layers of the N-side and P-side SL waveguiding layers are grown to define respective layer thicknesses that are optimized for waveguide planarity, the layer thicknesses being between approximately 1 nm and approximately 5 nm.
Layer stacks claimed or described, ordered top of device to substrate.
GaN edge emitting laser
Materials described outside the worked examples.
semi-polar GaN substrate
GaN
GaN-based N-side waveguiding layer (superlattice or bulk)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
SL waveguiding layer individual layer thickness (optimized for planarity) | 1–5 nm | GaInN/GaN superlattice waveguiding layer |
Active region quantum well layer thickness | 1–5 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,355,422Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a GaN edge emitting laser comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N- type cladding layer, and a P-type cladding layer, wherein: the GaN substrate defines a 2021 crystal growth plane and a glide plane; the N-side waveguiding layer comprises a GaN-based superlattice or bulk waveguiding layer; the P-side waveguiding layer comprises a GaN-based superlattice or bulk waveguiding layer; the active region is interposed between and extends substantially parallel to the N-side SL waveguiding layer and the P-side SL waveguiding layer; the N-type cladding layer is interposed between the N-side waveguiding layer and the GaN substrate; the P-type cladding layer is formed over the P-side waveguiding layer; the strain-thickness product of the N-side SL waveguiding layer exceeds its strain relaxation critical value and the strain-thickness product of the N-type cladding layer exceeds its strain relaxation critical value such that resulting strain relaxation is mono-directional along the glide plane of the GaN substrate; and the N-side and P-side GaN-based waveguiding layers are grown at a growth rate that exceeds approximately 0.09 nm/s to optimize waveguide planarity.
A method of fabricating a GaN edge emitting laser as claimed in claim 1 wherein the growth rate at which the N-side and P-side GaN-based waveguiding layers are grown is approximately 0.095 nm/s.
A method of fabricating a GaN edge emitting laser as claimed in claim 1 wherein the growth rate at which the N-side and P-side GaN-based waveguiding layers are grown is between approximately 0.09 nm/s and approximately 0.10 nm/s.
Docket No.-SP₁ 0 -165A 4. A method of fabricating a GaN edge emitting laser as claimed in claim 1 wherein: the N-side waveguiding layer comprises a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layer; the P-side waveguiding layer comprises a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layer; and the superlattice layers of the N-side and P-side SL waveguiding layers are grown to define respective layer thicknesses that are optimized for waveguide planarity, the layer thicknesses being between approximately 1 nm and approximately 5 nm.
Layer stacks claimed or described, ordered top of device to substrate.
GaN edge emitting laser
Materials described outside the worked examples.
semi-polar GaN substrate
GaN
GaN-based N-side waveguiding layer (superlattice or bulk)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
SL waveguiding layer individual layer thickness (optimized for planarity) | 1–5 nm | GaInN/GaN superlattice waveguiding layer |
Active region quantum well layer thickness | 1–5 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,355,422Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a GaN edge emitting laser comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N- type cladding layer, and a P-type cladding layer, wherein: the GaN substrate defines a 2021 crystal growth plane and a glide plane; the N-side waveguiding layer comprises a GaN-based superlattice or bulk waveguiding layer; the P-side waveguiding layer comprises a GaN-based superlattice or bulk waveguiding layer; the active region is interposed between and extends substantially parallel to the N-side SL waveguiding layer and the P-side SL waveguiding layer; the N-type cladding layer is interposed between the N-side waveguiding layer and the GaN substrate; the P-type cladding layer is formed over the P-side waveguiding layer; the strain-thickness product of the N-side SL waveguiding layer exceeds its strain relaxation critical value and the strain-thickness product of the N-type cladding layer exceeds its strain relaxation critical value such that resulting strain relaxation is mono-directional along the glide plane of the GaN substrate; and the N-side and P-side GaN-based waveguiding layers are grown at a growth rate that exceeds approximately 0.09 nm/s to optimize waveguide planarity.
A method of fabricating a GaN edge emitting laser as claimed in claim 1 wherein the growth rate at which the N-side and P-side GaN-based waveguiding layers are grown is approximately 0.095 nm/s.
A method of fabricating a GaN edge emitting laser as claimed in claim 1 wherein the growth rate at which the N-side and P-side GaN-based waveguiding layers are grown is between approximately 0.09 nm/s and approximately 0.10 nm/s.
Docket No.-SP₁ 0 -165A 4. A method of fabricating a GaN edge emitting laser as claimed in claim 1 wherein: the N-side waveguiding layer comprises a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layer; the P-side waveguiding layer comprises a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layer; and the superlattice layers of the N-side and P-side SL waveguiding layers are grown to define respective layer thicknesses that are optimized for waveguide planarity, the layer thicknesses being between approximately 1 nm and approximately 5 nm.
Layer stacks claimed or described, ordered top of device to substrate.
GaN edge emitting laser
Materials described outside the worked examples.
semi-polar GaN substrate
GaN
GaN-based N-side waveguiding layer (superlattice or bulk)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
SL waveguiding layer individual layer thickness (optimized for planarity) | 1–5 nm | GaInN/GaN superlattice waveguiding layer |
Active region quantum well layer thickness | 1–5 nm |
Related documents with shared materials, methods, properties, or citations.
GaN-based P-side waveguiding layer (superlattice or bulk)
N-type cladding layer
P-type cladding layer
GaInN/GaN superlattice waveguiding layer
GaInN/GaInN superlattice waveguiding layer
GaInN quantum well
GaInN
AlGaInN barrier layer
AlGaInN
GaInN |
Active region barrier layer thickness | 5–30 nm | AlGaInN |
GaN-based P-side waveguiding layer (superlattice or bulk)
N-type cladding layer
P-type cladding layer
GaInN/GaN superlattice waveguiding layer
GaInN/GaInN superlattice waveguiding layer
GaInN quantum well
GaInN
AlGaInN barrier layer
AlGaInN
GaInN |
Active region barrier layer thickness | 5–30 nm | AlGaInN |
GaN-based P-side waveguiding layer (superlattice or bulk)
N-type cladding layer
P-type cladding layer
GaInN/GaN superlattice waveguiding layer
GaInN/GaInN superlattice waveguiding layer
GaInN quantum well
GaInN
AlGaInN barrier layer
AlGaInN
GaInN |
Active region barrier layer thickness | 5–30 nm | AlGaInN |
GaN-based P-side waveguiding layer (superlattice or bulk)
N-type cladding layer
P-type cladding layer
GaInN/GaN superlattice waveguiding layer
GaInN/GaInN superlattice waveguiding layer
GaInN quantum well
GaInN
AlGaInN barrier layer
AlGaInN
GaInN |
Active region barrier layer thickness | 5–30 nm | AlGaInN |