GAN EPITAXY WITH MIGRATION ENHANCEMENT AND SURFACE ENERGY MODIFICATION | Matter42 Literature
Patent
Atlas literature
Patent
US 8,524,581
GAN EPITAXY WITH MIGRATION ENHANCEMENT AND SURFACE ENERGY MODIFICATION
Philip A. Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan et al.
2013-09-03·US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2 independent · 18 dependent
1
IndependentGroup III precursorsurfactant precursor/surfactant layerGroup V precursor (nitrogen-containing species)
A method for growing a film comprising: a) providing a deposition chamber comprising a plurality of processing regions wherein the processing regions are not in fluid contact with one another; b) exposing a substrate to one or more Group III precursors in a first processing region; c) exposing the substrate to one or more surfactant precursors in a second processing SVG 13339695.04-30-2013.HG₅P₃₅L₆PXXIFW3.CLM.1.svg 0.48 8.5 Black and white lav er with thickness less than two monola y ers; d) exposing the substrate to one or more Group V precursors in a third processing region; and repeating steps b) through d) until a desired thickness of the film is reached.
2
Dependent← claim 1surfactant precursor (H, Cl, Br, I, As, P, Bi, In, Sb, Pb, Sn, Ge, Se, Te, Mg, Cd, Zn, Hg)
The method of claim 1 wherein the surfactant precursor comprises hydrogen, chlorine, bromine, iodine, arsenic, phosphorous, bismuth, indium, antimony, lead, tin, germanium, selenium, tellurium, magnesium, cadmium, zin c, mercury, or combinations thereof.
The method of claim 1 wherein the surfactant precursor comprises indium, antimony, or combinations thereof.
4
Dependent← claim 1Group III precursor
The method of claim 1 wherein the Group III precursor gases include one or more of Al-containing gases, Ga-containing, In-containing gases, or combinations thereof.
5
Dependent← claim 1Group V precursor (nitrogen-containing species)
The method of claim 1 wherein the Group V precursor comprises a nitrogen- containing species.
8
Dependent← claim 1
The method of claim 1 wherein the growth of the film occurs at between about 25 ° C and about 800 °C.
9
Dependent← claim 1
The method of claim 1 wherein the growth of the film occurs at between about 500 ° C and about 800 °C.
10
Dependent← claim 1III-nitride film (AlN, GaN, InN, AlGaN, AlInN, InGaN, or InGaAlN)
The method of claim 1 wherein the film is one of A I N, GaN, InN, AlGaN, A l InN, InGaN, or InGaA lN.
11
Dependent← claim 1
The method of claim 1 wherein an exposure dosage of the one or more precursor gases in each of step b), step c), and step d) is influenced by the rotation speed of a rotating substrate support.
12
Dependent← claim 1
The method of claim 1 wherein the thickness of the film after a single sequence of steps b) through d) is less than one monolayer.
13
Dependent← claim 1
(Ooriginal)The method of claim 1 wherein the thickness of the film after a single sequence of steps b) through d) is greater than or equal to one monolayer.
14
Dependent← claim 1
The method of claim 1 further comprising exposing the substrate to a hydrogen plasma before step d).
15
Dependent← claim 1
The method of claim 1 further comprising exposing the substrate to a hydrogen plasma after step d).
The method of claim 1 wherein the exposure to one or more surfactant precursors forms a surfactant layer with thickness greater than or equal to one monolayer.
18
Dependent← claim 1
The method of claim 1 further comprising measu ri ng one or more film properties of the thin film formed on the substrate in a fourth reaction region.
The method of claim 1 further comprising measuring one or more film properties of the surfactant layer formed on the substrate in a fourth reaction region.
20
Dependent← claim 1
The method of claim 1 wherein the first reaction region and the second reaction region are the same reaction region. 4
17
Independent
3 PATENT Docket No. I M0376 US canceled
Materials
Materials described outside the worked examples.
Group III precursor
Precursor
surfactant precursor/surfactant layer
Surfactant
Process steps
Additional fabrication and treatment steps described in the patent.
1
Epitaxial Growth
Step 1
Temperature
25, 800°C
Process details
substrate support:rotating substrate support
Group V precursors:nitrogen-containing species including active neutral species of nitrogen
deposition chamber:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
film growth temperature (broad range)
25–800 °C
—
film growth temperature (narrow range)
500–800 °C
—
Why these are connected
Related documents with shared materials, methods, properties, or citations.
GAN EPITAXY WITH MIGRATION ENHANCEMENT AND SURFACE ENERGY MODIFICATION
Philip A. Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan et al.
2013-09-03·US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2 independent · 18 dependent
1
IndependentGroup III precursorsurfactant precursor/surfactant layerGroup V precursor (nitrogen-containing species)
A method for growing a film comprising: a) providing a deposition chamber comprising a plurality of processing regions wherein the processing regions are not in fluid contact with one another; b) exposing a substrate to one or more Group III precursors in a first processing region; c) exposing the substrate to one or more surfactant precursors in a second processing SVG 13339695.04-30-2013.HG₅P₃₅L₆PXXIFW3.CLM.1.svg 0.48 8.5 Black and white lav er with thickness less than two monola y ers; d) exposing the substrate to one or more Group V precursors in a third processing region; and repeating steps b) through d) until a desired thickness of the film is reached.
2
Dependent← claim 1surfactant precursor (H, Cl, Br, I, As, P, Bi, In, Sb, Pb, Sn, Ge, Se, Te, Mg, Cd, Zn, Hg)
The method of claim 1 wherein the surfactant precursor comprises hydrogen, chlorine, bromine, iodine, arsenic, phosphorous, bismuth, indium, antimony, lead, tin, germanium, selenium, tellurium, magnesium, cadmium, zin c, mercury, or combinations thereof.
The method of claim 1 wherein the surfactant precursor comprises indium, antimony, or combinations thereof.
4
Dependent← claim 1Group III precursor
The method of claim 1 wherein the Group III precursor gases include one or more of Al-containing gases, Ga-containing, In-containing gases, or combinations thereof.
5
Dependent← claim 1Group V precursor (nitrogen-containing species)
The method of claim 1 wherein the Group V precursor comprises a nitrogen- containing species.
8
Dependent← claim 1
The method of claim 1 wherein the growth of the film occurs at between about 25 ° C and about 800 °C.
9
Dependent← claim 1
The method of claim 1 wherein the growth of the film occurs at between about 500 ° C and about 800 °C.
10
Dependent← claim 1III-nitride film (AlN, GaN, InN, AlGaN, AlInN, InGaN, or InGaAlN)
The method of claim 1 wherein the film is one of A I N, GaN, InN, AlGaN, A l InN, InGaN, or InGaA lN.
11
Dependent← claim 1
The method of claim 1 wherein an exposure dosage of the one or more precursor gases in each of step b), step c), and step d) is influenced by the rotation speed of a rotating substrate support.
12
Dependent← claim 1
The method of claim 1 wherein the thickness of the film after a single sequence of steps b) through d) is less than one monolayer.
13
Dependent← claim 1
(Ooriginal)The method of claim 1 wherein the thickness of the film after a single sequence of steps b) through d) is greater than or equal to one monolayer.
14
Dependent← claim 1
The method of claim 1 further comprising exposing the substrate to a hydrogen plasma before step d).
15
Dependent← claim 1
The method of claim 1 further comprising exposing the substrate to a hydrogen plasma after step d).
The method of claim 1 wherein the exposure to one or more surfactant precursors forms a surfactant layer with thickness greater than or equal to one monolayer.
18
Dependent← claim 1
The method of claim 1 further comprising measu ri ng one or more film properties of the thin film formed on the substrate in a fourth reaction region.
The method of claim 1 further comprising measuring one or more film properties of the surfactant layer formed on the substrate in a fourth reaction region.
20
Dependent← claim 1
The method of claim 1 wherein the first reaction region and the second reaction region are the same reaction region. 4
17
Independent
3 PATENT Docket No. I M0376 US canceled
Materials
Materials described outside the worked examples.
Group III precursor
Precursor
surfactant precursor/surfactant layer
Surfactant
Process steps
Additional fabrication and treatment steps described in the patent.
1
Epitaxial Growth
Step 1
Temperature
25, 800°C
Process details
substrate support:rotating substrate support
Group V precursors:nitrogen-containing species including active neutral species of nitrogen
deposition chamber:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
film growth temperature (broad range)
25–800 °C
—
film growth temperature (narrow range)
500–800 °C
—
Why these are connected
Related documents with shared materials, methods, properties, or citations.
GAN EPITAXY WITH MIGRATION ENHANCEMENT AND SURFACE ENERGY MODIFICATION
Philip A. Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan et al.
2013-09-03·US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2 independent · 18 dependent
1
IndependentGroup III precursorsurfactant precursor/surfactant layerGroup V precursor (nitrogen-containing species)
A method for growing a film comprising: a) providing a deposition chamber comprising a plurality of processing regions wherein the processing regions are not in fluid contact with one another; b) exposing a substrate to one or more Group III precursors in a first processing region; c) exposing the substrate to one or more surfactant precursors in a second processing SVG 13339695.04-30-2013.HG₅P₃₅L₆PXXIFW3.CLM.1.svg 0.48 8.5 Black and white lav er with thickness less than two monola y ers; d) exposing the substrate to one or more Group V precursors in a third processing region; and repeating steps b) through d) until a desired thickness of the film is reached.
2
Dependent← claim 1surfactant precursor (H, Cl, Br, I, As, P, Bi, In, Sb, Pb, Sn, Ge, Se, Te, Mg, Cd, Zn, Hg)
The method of claim 1 wherein the surfactant precursor comprises hydrogen, chlorine, bromine, iodine, arsenic, phosphorous, bismuth, indium, antimony, lead, tin, germanium, selenium, tellurium, magnesium, cadmium, zin c, mercury, or combinations thereof.
The method of claim 1 wherein the surfactant precursor comprises indium, antimony, or combinations thereof.
4
Dependent← claim 1Group III precursor
The method of claim 1 wherein the Group III precursor gases include one or more of Al-containing gases, Ga-containing, In-containing gases, or combinations thereof.
5
Dependent← claim 1Group V precursor (nitrogen-containing species)
The method of claim 1 wherein the Group V precursor comprises a nitrogen- containing species.
8
Dependent← claim 1
The method of claim 1 wherein the growth of the film occurs at between about 25 ° C and about 800 °C.
9
Dependent← claim 1
The method of claim 1 wherein the growth of the film occurs at between about 500 ° C and about 800 °C.
10
Dependent← claim 1III-nitride film (AlN, GaN, InN, AlGaN, AlInN, InGaN, or InGaAlN)
The method of claim 1 wherein the film is one of A I N, GaN, InN, AlGaN, A l InN, InGaN, or InGaA lN.
11
Dependent← claim 1
The method of claim 1 wherein an exposure dosage of the one or more precursor gases in each of step b), step c), and step d) is influenced by the rotation speed of a rotating substrate support.
12
Dependent← claim 1
The method of claim 1 wherein the thickness of the film after a single sequence of steps b) through d) is less than one monolayer.
13
Dependent← claim 1
(Ooriginal)The method of claim 1 wherein the thickness of the film after a single sequence of steps b) through d) is greater than or equal to one monolayer.
14
Dependent← claim 1
The method of claim 1 further comprising exposing the substrate to a hydrogen plasma before step d).
15
Dependent← claim 1
The method of claim 1 further comprising exposing the substrate to a hydrogen plasma after step d).
The method of claim 1 wherein the exposure to one or more surfactant precursors forms a surfactant layer with thickness greater than or equal to one monolayer.
18
Dependent← claim 1
The method of claim 1 further comprising measu ri ng one or more film properties of the thin film formed on the substrate in a fourth reaction region.
The method of claim 1 further comprising measuring one or more film properties of the surfactant layer formed on the substrate in a fourth reaction region.
20
Dependent← claim 1
The method of claim 1 wherein the first reaction region and the second reaction region are the same reaction region. 4
17
Independent
3 PATENT Docket No. I M0376 US canceled
Materials
Materials described outside the worked examples.
Group III precursor
Precursor
surfactant precursor/surfactant layer
Surfactant
Process steps
Additional fabrication and treatment steps described in the patent.
1
Epitaxial Growth
Step 1
Temperature
25, 800°C
Process details
substrate support:rotating substrate support
Group V precursors:nitrogen-containing species including active neutral species of nitrogen
deposition chamber:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
film growth temperature (broad range)
25–800 °C
—
film growth temperature (narrow range)
500–800 °C
—
Why these are connected
Related documents with shared materials, methods, properties, or citations.
GAN EPITAXY WITH MIGRATION ENHANCEMENT AND SURFACE ENERGY MODIFICATION
Philip A. Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan et al.
2013-09-03·US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2 independent · 18 dependent
1
IndependentGroup III precursorsurfactant precursor/surfactant layerGroup V precursor (nitrogen-containing species)
A method for growing a film comprising: a) providing a deposition chamber comprising a plurality of processing regions wherein the processing regions are not in fluid contact with one another; b) exposing a substrate to one or more Group III precursors in a first processing region; c) exposing the substrate to one or more surfactant precursors in a second processing SVG 13339695.04-30-2013.HG₅P₃₅L₆PXXIFW3.CLM.1.svg 0.48 8.5 Black and white lav er with thickness less than two monola y ers; d) exposing the substrate to one or more Group V precursors in a third processing region; and repeating steps b) through d) until a desired thickness of the film is reached.
2
Dependent← claim 1surfactant precursor (H, Cl, Br, I, As, P, Bi, In, Sb, Pb, Sn, Ge, Se, Te, Mg, Cd, Zn, Hg)
The method of claim 1 wherein the surfactant precursor comprises hydrogen, chlorine, bromine, iodine, arsenic, phosphorous, bismuth, indium, antimony, lead, tin, germanium, selenium, tellurium, magnesium, cadmium, zin c, mercury, or combinations thereof.
The method of claim 1 wherein the surfactant precursor comprises indium, antimony, or combinations thereof.
4
Dependent← claim 1Group III precursor
The method of claim 1 wherein the Group III precursor gases include one or more of Al-containing gases, Ga-containing, In-containing gases, or combinations thereof.
5
Dependent← claim 1Group V precursor (nitrogen-containing species)
The method of claim 1 wherein the Group V precursor comprises a nitrogen- containing species.
8
Dependent← claim 1
The method of claim 1 wherein the growth of the film occurs at between about 25 ° C and about 800 °C.
9
Dependent← claim 1
The method of claim 1 wherein the growth of the film occurs at between about 500 ° C and about 800 °C.
10
Dependent← claim 1III-nitride film (AlN, GaN, InN, AlGaN, AlInN, InGaN, or InGaAlN)
The method of claim 1 wherein the film is one of A I N, GaN, InN, AlGaN, A l InN, InGaN, or InGaA lN.
11
Dependent← claim 1
The method of claim 1 wherein an exposure dosage of the one or more precursor gases in each of step b), step c), and step d) is influenced by the rotation speed of a rotating substrate support.
12
Dependent← claim 1
The method of claim 1 wherein the thickness of the film after a single sequence of steps b) through d) is less than one monolayer.
13
Dependent← claim 1
(Ooriginal)The method of claim 1 wherein the thickness of the film after a single sequence of steps b) through d) is greater than or equal to one monolayer.
14
Dependent← claim 1
The method of claim 1 further comprising exposing the substrate to a hydrogen plasma before step d).
15
Dependent← claim 1
The method of claim 1 further comprising exposing the substrate to a hydrogen plasma after step d).
The method of claim 1 wherein the exposure to one or more surfactant precursors forms a surfactant layer with thickness greater than or equal to one monolayer.
18
Dependent← claim 1
The method of claim 1 further comprising measu ri ng one or more film properties of the thin film formed on the substrate in a fourth reaction region.
The method of claim 1 further comprising measuring one or more film properties of the surfactant layer formed on the substrate in a fourth reaction region.
20
Dependent← claim 1
The method of claim 1 wherein the first reaction region and the second reaction region are the same reaction region. 4
17
Independent
3 PATENT Docket No. I M0376 US canceled
Materials
Materials described outside the worked examples.
Group III precursor
Precursor
surfactant precursor/surfactant layer
Surfactant
Process steps
Additional fabrication and treatment steps described in the patent.
1
Epitaxial Growth
Step 1
Temperature
25, 800°C
Process details
substrate support:rotating substrate support
Group V precursors:nitrogen-containing species including active neutral species of nitrogen
deposition chamber:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
film growth temperature (broad range)
25–800 °C
—
film growth temperature (narrow range)
500–800 °C
—
Why these are connected
Related documents with shared materials, methods, properties, or citations.
