Patent
US 10,655,244GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODUCING GaN CRYSTAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Yusuke TSUKADA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,655,244Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 -14. SVG 16034953.12-20-2019.K₄ERZKFIRXEAPX0.CLM.1.svg 0.16 3.75 Black and white a first main surface; and a second main surface provided on an opposite side from the first main surface, wherein an angle between a normal line of the first main surface and an m -axis is 0 0 to 20 0, and when the first main surface is divided into an outer peripheral portion measuring 3 mm or less from an edge and a central portion surrounded by the outer peripheral portion, and the central portion is divided into a plurality of square partitions each having a 5 mm side, at least one square region, which has a 100 m side and in which no dark spots are detected in a CL measurement, is observed within each of the partitions. Canceled
Canceled
The GaN substrate according to claim [[1]] 1, which is a (10-10) substrate, a (20-21) substrate, a (20-2-1) substrate, a (30-31) substrate or a (30-3-1) substrate. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein an RMS roughness of the first main surface as measured by AFM is smaller than 5 nm in a measurement area of 10 mx 10 m. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[3]] 17, wherein the second main surface is a mirror surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[3]] 17, wherein the second main surface is a matte surface. Currently amended
The GaN substrate according to claim [[3]] 17, wherein a ratio of an intensity of a yellow band with respect to an intensity of a peak of wavelength corresponding to a band gap of GaN is lower than 1/5 in an emission spectrum of the first main surface obtained by a photoluminescence measurement. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[4]] 18, wherein a ratio of an intensity of a yellow band with respect to an intensity of a peak of wavelength corresponding to a band gap of GaN is lower than 1/5 in an emission spectrum of the second main surface obtained by a photoluminescence measurement. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[5]] 19, wherein a ratio of an intensity of a yellow band with respect to an intensity of a peak of wavelength corresponding to a band gap of GaN is lower than 1/5 in an emission spectrum of the second main surface obtained by a photoluminescence measurement. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein the first main surface has a circular shape. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein the first main surface has a rectangular shape. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein an area of the first main surface is comparable to or greater than an area of a circle having a diameter of 2 inches. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, which is made up of a single crystal region. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, which is made up of a plurality of crystal regions each exposed at both the first main surface and the second main surface. Currently amended
The GaN substrate according to claim [[13]] 2, wherein the plurality of crystal regions are a rr ayed in one row in a direction of an orthogonal projection of a c- axis on the first main surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[13]] 27, wherein the plurality of crystal regions are a rr ayed in two rows in a direction of an orthogonal projection of a c- axis on the first main surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[13]] 27, wherein the plurality of crystal regions are a rr ayed in three rows in a direction of an orthogonal projection of a c-axis on the first main surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 1, which comprises a GaN crystal having an alkali metal concentration lower than 1x10 15 cm- 3 and an absorption coefficient at 450 nm of 2 cm⁻¹ or smaller. Currently amended
(Cu rr ently amended) A method for producing a GaN crystal, the method comprising a step of preparing the GaN substrate according to claim [[1]] 1, and epitaxially growing GaN thereon. Currently amended
(Cu rr ently amended) A method for producing a semiconductor device, the method comprising: preparing the GaN substrate according to claim [[1]] 15, and growing thereon one or more types of nitride semiconductor layer. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
semiconductor device on GaN substrate
Materials described outside the worked examples.
GaN
nitride semiconductor
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS roughness of first main surface by AFM | ≤ 5 nm | GaN |
ratio of yellow band intensity to band-gap peak intensity in PL emission spectrum | ≤ 0.2 dimensionless |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,655,244Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 -14. SVG 16034953.12-20-2019.K₄ERZKFIRXEAPX0.CLM.1.svg 0.16 3.75 Black and white a first main surface; and a second main surface provided on an opposite side from the first main surface, wherein an angle between a normal line of the first main surface and an m -axis is 0 0 to 20 0, and when the first main surface is divided into an outer peripheral portion measuring 3 mm or less from an edge and a central portion surrounded by the outer peripheral portion, and the central portion is divided into a plurality of square partitions each having a 5 mm side, at least one square region, which has a 100 m side and in which no dark spots are detected in a CL measurement, is observed within each of the partitions. Canceled
Canceled
The GaN substrate according to claim [[1]] 1, which is a (10-10) substrate, a (20-21) substrate, a (20-2-1) substrate, a (30-31) substrate or a (30-3-1) substrate. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein an RMS roughness of the first main surface as measured by AFM is smaller than 5 nm in a measurement area of 10 mx 10 m. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[3]] 17, wherein the second main surface is a mirror surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[3]] 17, wherein the second main surface is a matte surface. Currently amended
The GaN substrate according to claim [[3]] 17, wherein a ratio of an intensity of a yellow band with respect to an intensity of a peak of wavelength corresponding to a band gap of GaN is lower than 1/5 in an emission spectrum of the first main surface obtained by a photoluminescence measurement. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[4]] 18, wherein a ratio of an intensity of a yellow band with respect to an intensity of a peak of wavelength corresponding to a band gap of GaN is lower than 1/5 in an emission spectrum of the second main surface obtained by a photoluminescence measurement. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[5]] 19, wherein a ratio of an intensity of a yellow band with respect to an intensity of a peak of wavelength corresponding to a band gap of GaN is lower than 1/5 in an emission spectrum of the second main surface obtained by a photoluminescence measurement. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein the first main surface has a circular shape. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein the first main surface has a rectangular shape. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein an area of the first main surface is comparable to or greater than an area of a circle having a diameter of 2 inches. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, which is made up of a single crystal region. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, which is made up of a plurality of crystal regions each exposed at both the first main surface and the second main surface. Currently amended
The GaN substrate according to claim [[13]] 2, wherein the plurality of crystal regions are a rr ayed in one row in a direction of an orthogonal projection of a c- axis on the first main surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[13]] 27, wherein the plurality of crystal regions are a rr ayed in two rows in a direction of an orthogonal projection of a c- axis on the first main surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[13]] 27, wherein the plurality of crystal regions are a rr ayed in three rows in a direction of an orthogonal projection of a c-axis on the first main surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 1, which comprises a GaN crystal having an alkali metal concentration lower than 1x10 15 cm- 3 and an absorption coefficient at 450 nm of 2 cm⁻¹ or smaller. Currently amended
(Cu rr ently amended) A method for producing a GaN crystal, the method comprising a step of preparing the GaN substrate according to claim [[1]] 1, and epitaxially growing GaN thereon. Currently amended
(Cu rr ently amended) A method for producing a semiconductor device, the method comprising: preparing the GaN substrate according to claim [[1]] 15, and growing thereon one or more types of nitride semiconductor layer. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
semiconductor device on GaN substrate
Materials described outside the worked examples.
GaN
nitride semiconductor
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS roughness of first main surface by AFM | ≤ 5 nm | GaN |
ratio of yellow band intensity to band-gap peak intensity in PL emission spectrum | ≤ 0.2 dimensionless |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,655,244Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 -14. SVG 16034953.12-20-2019.K₄ERZKFIRXEAPX0.CLM.1.svg 0.16 3.75 Black and white a first main surface; and a second main surface provided on an opposite side from the first main surface, wherein an angle between a normal line of the first main surface and an m -axis is 0 0 to 20 0, and when the first main surface is divided into an outer peripheral portion measuring 3 mm or less from an edge and a central portion surrounded by the outer peripheral portion, and the central portion is divided into a plurality of square partitions each having a 5 mm side, at least one square region, which has a 100 m side and in which no dark spots are detected in a CL measurement, is observed within each of the partitions. Canceled
Canceled
The GaN substrate according to claim [[1]] 1, which is a (10-10) substrate, a (20-21) substrate, a (20-2-1) substrate, a (30-31) substrate or a (30-3-1) substrate. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein an RMS roughness of the first main surface as measured by AFM is smaller than 5 nm in a measurement area of 10 mx 10 m. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[3]] 17, wherein the second main surface is a mirror surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[3]] 17, wherein the second main surface is a matte surface. Currently amended
The GaN substrate according to claim [[3]] 17, wherein a ratio of an intensity of a yellow band with respect to an intensity of a peak of wavelength corresponding to a band gap of GaN is lower than 1/5 in an emission spectrum of the first main surface obtained by a photoluminescence measurement. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[4]] 18, wherein a ratio of an intensity of a yellow band with respect to an intensity of a peak of wavelength corresponding to a band gap of GaN is lower than 1/5 in an emission spectrum of the second main surface obtained by a photoluminescence measurement. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[5]] 19, wherein a ratio of an intensity of a yellow band with respect to an intensity of a peak of wavelength corresponding to a band gap of GaN is lower than 1/5 in an emission spectrum of the second main surface obtained by a photoluminescence measurement. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein the first main surface has a circular shape. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein the first main surface has a rectangular shape. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein an area of the first main surface is comparable to or greater than an area of a circle having a diameter of 2 inches. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, which is made up of a single crystal region. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, which is made up of a plurality of crystal regions each exposed at both the first main surface and the second main surface. Currently amended
The GaN substrate according to claim [[13]] 2, wherein the plurality of crystal regions are a rr ayed in one row in a direction of an orthogonal projection of a c- axis on the first main surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[13]] 27, wherein the plurality of crystal regions are a rr ayed in two rows in a direction of an orthogonal projection of a c- axis on the first main surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[13]] 27, wherein the plurality of crystal regions are a rr ayed in three rows in a direction of an orthogonal projection of a c-axis on the first main surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 1, which comprises a GaN crystal having an alkali metal concentration lower than 1x10 15 cm- 3 and an absorption coefficient at 450 nm of 2 cm⁻¹ or smaller. Currently amended
(Cu rr ently amended) A method for producing a GaN crystal, the method comprising a step of preparing the GaN substrate according to claim [[1]] 1, and epitaxially growing GaN thereon. Currently amended
(Cu rr ently amended) A method for producing a semiconductor device, the method comprising: preparing the GaN substrate according to claim [[1]] 15, and growing thereon one or more types of nitride semiconductor layer. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
semiconductor device on GaN substrate
Materials described outside the worked examples.
GaN
nitride semiconductor
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS roughness of first main surface by AFM | ≤ 5 nm | GaN |
ratio of yellow band intensity to band-gap peak intensity in PL emission spectrum | ≤ 0.2 dimensionless |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,655,244Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 -14. SVG 16034953.12-20-2019.K₄ERZKFIRXEAPX0.CLM.1.svg 0.16 3.75 Black and white a first main surface; and a second main surface provided on an opposite side from the first main surface, wherein an angle between a normal line of the first main surface and an m -axis is 0 0 to 20 0, and when the first main surface is divided into an outer peripheral portion measuring 3 mm or less from an edge and a central portion surrounded by the outer peripheral portion, and the central portion is divided into a plurality of square partitions each having a 5 mm side, at least one square region, which has a 100 m side and in which no dark spots are detected in a CL measurement, is observed within each of the partitions. Canceled
Canceled
The GaN substrate according to claim [[1]] 1, which is a (10-10) substrate, a (20-21) substrate, a (20-2-1) substrate, a (30-31) substrate or a (30-3-1) substrate. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein an RMS roughness of the first main surface as measured by AFM is smaller than 5 nm in a measurement area of 10 mx 10 m. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[3]] 17, wherein the second main surface is a mirror surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[3]] 17, wherein the second main surface is a matte surface. Currently amended
The GaN substrate according to claim [[3]] 17, wherein a ratio of an intensity of a yellow band with respect to an intensity of a peak of wavelength corresponding to a band gap of GaN is lower than 1/5 in an emission spectrum of the first main surface obtained by a photoluminescence measurement. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[4]] 18, wherein a ratio of an intensity of a yellow band with respect to an intensity of a peak of wavelength corresponding to a band gap of GaN is lower than 1/5 in an emission spectrum of the second main surface obtained by a photoluminescence measurement. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[5]] 19, wherein a ratio of an intensity of a yellow band with respect to an intensity of a peak of wavelength corresponding to a band gap of GaN is lower than 1/5 in an emission spectrum of the second main surface obtained by a photoluminescence measurement. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein the first main surface has a circular shape. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein the first main surface has a rectangular shape. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, wherein an area of the first main surface is comparable to or greater than an area of a circle having a diameter of 2 inches. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, which is made up of a single crystal region. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 15, which is made up of a plurality of crystal regions each exposed at both the first main surface and the second main surface. Currently amended
The GaN substrate according to claim [[13]] 2, wherein the plurality of crystal regions are a rr ayed in one row in a direction of an orthogonal projection of a c- axis on the first main surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[13]] 27, wherein the plurality of crystal regions are a rr ayed in two rows in a direction of an orthogonal projection of a c- axis on the first main surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[13]] 27, wherein the plurality of crystal regions are a rr ayed in three rows in a direction of an orthogonal projection of a c-axis on the first main surface. Currently amended
(Cu rr ently amended) The GaN substrate according to claim [[1]] 1, which comprises a GaN crystal having an alkali metal concentration lower than 1x10 15 cm- 3 and an absorption coefficient at 450 nm of 2 cm⁻¹ or smaller. Currently amended
(Cu rr ently amended) A method for producing a GaN crystal, the method comprising a step of preparing the GaN substrate according to claim [[1]] 1, and epitaxially growing GaN thereon. Currently amended
(Cu rr ently amended) A method for producing a semiconductor device, the method comprising: preparing the GaN substrate according to claim [[1]] 15, and growing thereon one or more types of nitride semiconductor layer. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
semiconductor device on GaN substrate
Materials described outside the worked examples.
GaN
nitride semiconductor
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS roughness of first main surface by AFM | ≤ 5 nm | GaN |
ratio of yellow band intensity to band-gap peak intensity in PL emission spectrum | ≤ 0.2 dimensionless |
Related documents with shared materials, methods, properties, or citations.
absorption coefficient at 450 nm | ≤ 2 cm⁻¹ | GaN |
alkali metal concentration in GaN crystal | ≤ 1000000000000000 cm⁻³ | GaN |
absorption coefficient at 450 nm | ≤ 2 cm⁻¹ | GaN |
alkali metal concentration in GaN crystal | ≤ 1000000000000000 cm⁻³ | GaN |
absorption coefficient at 450 nm | ≤ 2 cm⁻¹ | GaN |
alkali metal concentration in GaN crystal | ≤ 1000000000000000 cm⁻³ | GaN |
absorption coefficient at 450 nm | ≤ 2 cm⁻¹ | GaN |
alkali metal concentration in GaN crystal | ≤ 1000000000000000 cm⁻³ | GaN |