GaN LATERAL VERTICAL JFET WITH REGROWN CHANNEL AND DIELECTRIC GATE

Gangfeng Ye

Patent

Atlas literature

Patent

US 10,971,587

GaN LATERAL VERTICAL JFET WITH REGROWN CHANNEL AND DIELECTRIC GATE

Gangfeng Ye

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

Figure 1

Figure 1 is simpliﬁed exemplary cross-sectional diagram of a lateral vertical HJFET with source-P block contact and side contact implant in accordance with embodiments of the current invention.

Figure 2

Figure 2 illustrates exemplary diagrams of a regrown process in accordance with embodiments of the current invention.

Figure 3

Figure 3 illustrates exemplary diagrams of forming gate with enhanced Ohmic contact and N+ implant process in accordance with embodiments of the current invention.

Figure 4

Figure 4 illustrates exemplary diagrams of forming an enhanced Ohmic contact and source metal in accordance with embodiments of the current invention.

Figure 5

Figure 5 illustrates an exemplary ﬂow chart of the process with an implant source layer for enhanced lateral channel performance in accordance with embodiments of the current invention.

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 7 dependent

1
IndependentGaNGaNGaNGaN lateral vertical JFET (HJFET)
A method comprising: growing-as-grown epitaxial layers on top of a N+ GaN substrate, wherein the growing as-grown epitaxial layers comprising growing an N-type GaN drift layer over the N+ GaN substrate layer, and growing a P-type block over the N-type GaN drift layer; re-growing a lateral channel layer over the P-type block layer; forming a contact gap by selective area regrowth during the regrowing the lateral channel layer or etching through the lateral channel after the regrowing; implanting N+ in the lateral channel layer to form an implanted N+ source region; and depositing source metal in the contact gap and over a part of the lateral channel layer such that the source metal is attached to the p- P-type block layer and the implanted N+ source region at. Currently amended
1. 2
  Dependent← claim 1GaN lateral vertical JFET (HJFET)
  The method of claim 1, further comprising forming a gate layer over the lateral channel layer. Original
2. 5
  Dependent← claim 1GaNGaNGaN lateral vertical JFET (HJFET)
  The method of claim 1, wherein the re-growing of the lateral channel layer comprises: re-growing a ﬁrst N-type regrown layer over the P-type block layer, wherein the ﬁrst N-type regrown layer encapsulates the P-type block layer; etching trenches through the ﬁrst N-type regrown layer and the P-type block layer; and re-growing a second regrown layer over the ﬁrst N-type regrown layer and in the trenches to form an N-type channel and a 2D Gas channel. Currently amended

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN lateral vertical JFET (HJFET)

drain metaldrain contact

source metalsource contact

implanted N+ source regionsource implant region

dielectric gate layergate layer

AlGaN/GaNlateral channel layer

GaNanti p doping barrier regrown layer

Materials

Materials described outside the worked examples.

N+ GaN substrate

GaN

Substrate

Drift LayerBlocking Layer

dielectric gate layer

Gate Dielectric

Process steps

Additional fabrication and treatment steps described in the patent.

Epitaxial Growth

Step 1

Process details

description:As-grown epitaxial layers on N+ GaN substrate; N-type GaN drift layer grown over N+ GaN substrate, then P-type block layer grown over N-type GaN drift layer. Drift layer height range 6-20 µm; substrate height range 50-100 µm (thinning) or less than 300 µm.

Materials:GaNGaN

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GaN LATERAL VERTICAL JFET WITH REGROWN CHANNEL AND DIELECTRIC GATE | Matter42 Literature