Patent
US 9,159,870METHOD OF FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE
Jong Kyun YOU
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,159,870Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride (GaN) based semiconductor device, the method comprising: growing GaN based semiconductor layers on a first surface of a GaN substrate, wherein the GaN based semiconductor layers comprise a semiconductor stack and have a dislocation density of about 5 x 106/cm2 or less; [[and]] separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique to decrease a thickness of the GaN substrate; and removin q a second p ortion of the GaN substrate remainin q on the semiconductor stack usin g a laser lift-off.
The method of claim 1, further comprising: forming a support substrate on the semiconductor stack before separating the first portion of the GaN substrate. 3-4.
The method of claim 1, further comprising: growing a GaN based layer on the first portion of the GaN substrate after the first portion is separated from the semiconductor stack.
The method of claim 1, wherein the semiconductor stack comprises: a first conductivity type GaN based semiconductor layer; a second conductivity type GaN based semiconductor layer; and an active layer disposed between the first and second conductivity type GaN based semiconductor layers, wherein the GaN based semiconductor device comprises a light emitting diode.
canceled
canceled
The method of claim [[3]] 1, further comprising: forming, before forming the semiconductor stack, a sacrificial layer between the GaN substrate and the semiconductor stack, the sacrificial layer having a bandgap narrower than a 2 SVG 14024179.05-04-2015.I₉A₇DEUFPXXIFW3.CLM15829904.1.1396.158.2247.292.svg 0.447 2.837 Graph Black and white bandgap of the GaN substrate-herein te ecnd portion of the GaN sustat is-reoved from the semiconducto+r stckl usiingv a lase r lif t o ff procss
The method of claim 5, wherein the sacrificial layer comprises indium nitride or indium gallium nitride.
A method of fabricating a gallium nitride (GaN) based semiconductor device, the method comprising: growing GaN based semiconductor layers on a first surface of a GaN substrate, wherein the GaN based semiconductor layers comprise a semiconductor stack and have a dislocation density of about 5 x 106/cm2 or less; forming a sacrificial layer between the GaN based semiconductor layers and the GaN substrate; 3 SVG 14024179.05-04-2015.I₉A₇DEUFPXXIFW3.CLM15829905.1.1396.158.2247.292.svg 0.447 2.837 Graph Black and white separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique to decrease a thickness of the GaN substrate; and separating a second portion of the GaN substrate from the semiconductor stack using a laser lift-off technique, wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate, and the sacrificial layer is configured to absorb light emitted by the laser.
A method of fabricating a device, the method comprising: forming a sacrificial layer on a GaN substrate; growing at least one GaN based semiconductor layer on the sacrificial layer, wherein the GaN based semiconductor la y er has a dislocation density of about 5 x 106/cm2 or less; [[and]] separating, using a wire, a first portion of the GaN substrate from a remaining portion of the GaN substrate to decrease a thickness of the GaN substrate; removin g the sacrificial la y er and the remainin g portion of the GaN substrate by usin g a laser. 11-12.
canceled
canceled
The method of claim [[12]] 1 0, wherein the sacrificial layer comprises indium nitride or
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting diode with vertical structure
Materials described outside the worked examples.
GaN substrate
GaN
GaN based semiconductor layers
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dislocation Density | ≤ 5000000 /cm2 | GaN based semiconductor layers |
Thickness | 370–490 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,159,870Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride (GaN) based semiconductor device, the method comprising: growing GaN based semiconductor layers on a first surface of a GaN substrate, wherein the GaN based semiconductor layers comprise a semiconductor stack and have a dislocation density of about 5 x 106/cm2 or less; [[and]] separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique to decrease a thickness of the GaN substrate; and removin q a second p ortion of the GaN substrate remainin q on the semiconductor stack usin g a laser lift-off.
The method of claim 1, further comprising: forming a support substrate on the semiconductor stack before separating the first portion of the GaN substrate. 3-4.
The method of claim 1, further comprising: growing a GaN based layer on the first portion of the GaN substrate after the first portion is separated from the semiconductor stack.
The method of claim 1, wherein the semiconductor stack comprises: a first conductivity type GaN based semiconductor layer; a second conductivity type GaN based semiconductor layer; and an active layer disposed between the first and second conductivity type GaN based semiconductor layers, wherein the GaN based semiconductor device comprises a light emitting diode.
canceled
canceled
The method of claim [[3]] 1, further comprising: forming, before forming the semiconductor stack, a sacrificial layer between the GaN substrate and the semiconductor stack, the sacrificial layer having a bandgap narrower than a 2 SVG 14024179.05-04-2015.I₉A₇DEUFPXXIFW3.CLM15829904.1.1396.158.2247.292.svg 0.447 2.837 Graph Black and white bandgap of the GaN substrate-herein te ecnd portion of the GaN sustat is-reoved from the semiconducto+r stckl usiingv a lase r lif t o ff procss
The method of claim 5, wherein the sacrificial layer comprises indium nitride or indium gallium nitride.
A method of fabricating a gallium nitride (GaN) based semiconductor device, the method comprising: growing GaN based semiconductor layers on a first surface of a GaN substrate, wherein the GaN based semiconductor layers comprise a semiconductor stack and have a dislocation density of about 5 x 106/cm2 or less; forming a sacrificial layer between the GaN based semiconductor layers and the GaN substrate; 3 SVG 14024179.05-04-2015.I₉A₇DEUFPXXIFW3.CLM15829905.1.1396.158.2247.292.svg 0.447 2.837 Graph Black and white separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique to decrease a thickness of the GaN substrate; and separating a second portion of the GaN substrate from the semiconductor stack using a laser lift-off technique, wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate, and the sacrificial layer is configured to absorb light emitted by the laser.
A method of fabricating a device, the method comprising: forming a sacrificial layer on a GaN substrate; growing at least one GaN based semiconductor layer on the sacrificial layer, wherein the GaN based semiconductor la y er has a dislocation density of about 5 x 106/cm2 or less; [[and]] separating, using a wire, a first portion of the GaN substrate from a remaining portion of the GaN substrate to decrease a thickness of the GaN substrate; removin g the sacrificial la y er and the remainin g portion of the GaN substrate by usin g a laser. 11-12.
canceled
canceled
The method of claim [[12]] 1 0, wherein the sacrificial layer comprises indium nitride or
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting diode with vertical structure
Materials described outside the worked examples.
GaN substrate
GaN
GaN based semiconductor layers
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dislocation Density | ≤ 5000000 /cm2 | GaN based semiconductor layers |
Thickness | 370–490 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,159,870Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride (GaN) based semiconductor device, the method comprising: growing GaN based semiconductor layers on a first surface of a GaN substrate, wherein the GaN based semiconductor layers comprise a semiconductor stack and have a dislocation density of about 5 x 106/cm2 or less; [[and]] separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique to decrease a thickness of the GaN substrate; and removin q a second p ortion of the GaN substrate remainin q on the semiconductor stack usin g a laser lift-off.
The method of claim 1, further comprising: forming a support substrate on the semiconductor stack before separating the first portion of the GaN substrate. 3-4.
The method of claim 1, further comprising: growing a GaN based layer on the first portion of the GaN substrate after the first portion is separated from the semiconductor stack.
The method of claim 1, wherein the semiconductor stack comprises: a first conductivity type GaN based semiconductor layer; a second conductivity type GaN based semiconductor layer; and an active layer disposed between the first and second conductivity type GaN based semiconductor layers, wherein the GaN based semiconductor device comprises a light emitting diode.
canceled
canceled
The method of claim [[3]] 1, further comprising: forming, before forming the semiconductor stack, a sacrificial layer between the GaN substrate and the semiconductor stack, the sacrificial layer having a bandgap narrower than a 2 SVG 14024179.05-04-2015.I₉A₇DEUFPXXIFW3.CLM15829904.1.1396.158.2247.292.svg 0.447 2.837 Graph Black and white bandgap of the GaN substrate-herein te ecnd portion of the GaN sustat is-reoved from the semiconducto+r stckl usiingv a lase r lif t o ff procss
The method of claim 5, wherein the sacrificial layer comprises indium nitride or indium gallium nitride.
A method of fabricating a gallium nitride (GaN) based semiconductor device, the method comprising: growing GaN based semiconductor layers on a first surface of a GaN substrate, wherein the GaN based semiconductor layers comprise a semiconductor stack and have a dislocation density of about 5 x 106/cm2 or less; forming a sacrificial layer between the GaN based semiconductor layers and the GaN substrate; 3 SVG 14024179.05-04-2015.I₉A₇DEUFPXXIFW3.CLM15829905.1.1396.158.2247.292.svg 0.447 2.837 Graph Black and white separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique to decrease a thickness of the GaN substrate; and separating a second portion of the GaN substrate from the semiconductor stack using a laser lift-off technique, wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate, and the sacrificial layer is configured to absorb light emitted by the laser.
A method of fabricating a device, the method comprising: forming a sacrificial layer on a GaN substrate; growing at least one GaN based semiconductor layer on the sacrificial layer, wherein the GaN based semiconductor la y er has a dislocation density of about 5 x 106/cm2 or less; [[and]] separating, using a wire, a first portion of the GaN substrate from a remaining portion of the GaN substrate to decrease a thickness of the GaN substrate; removin g the sacrificial la y er and the remainin g portion of the GaN substrate by usin g a laser. 11-12.
canceled
canceled
The method of claim [[12]] 1 0, wherein the sacrificial layer comprises indium nitride or
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting diode with vertical structure
Materials described outside the worked examples.
GaN substrate
GaN
GaN based semiconductor layers
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dislocation Density | ≤ 5000000 /cm2 | GaN based semiconductor layers |
Thickness | 370–490 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,159,870Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride (GaN) based semiconductor device, the method comprising: growing GaN based semiconductor layers on a first surface of a GaN substrate, wherein the GaN based semiconductor layers comprise a semiconductor stack and have a dislocation density of about 5 x 106/cm2 or less; [[and]] separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique to decrease a thickness of the GaN substrate; and removin q a second p ortion of the GaN substrate remainin q on the semiconductor stack usin g a laser lift-off.
The method of claim 1, further comprising: forming a support substrate on the semiconductor stack before separating the first portion of the GaN substrate. 3-4.
The method of claim 1, further comprising: growing a GaN based layer on the first portion of the GaN substrate after the first portion is separated from the semiconductor stack.
The method of claim 1, wherein the semiconductor stack comprises: a first conductivity type GaN based semiconductor layer; a second conductivity type GaN based semiconductor layer; and an active layer disposed between the first and second conductivity type GaN based semiconductor layers, wherein the GaN based semiconductor device comprises a light emitting diode.
canceled
canceled
The method of claim [[3]] 1, further comprising: forming, before forming the semiconductor stack, a sacrificial layer between the GaN substrate and the semiconductor stack, the sacrificial layer having a bandgap narrower than a 2 SVG 14024179.05-04-2015.I₉A₇DEUFPXXIFW3.CLM15829904.1.1396.158.2247.292.svg 0.447 2.837 Graph Black and white bandgap of the GaN substrate-herein te ecnd portion of the GaN sustat is-reoved from the semiconducto+r stckl usiingv a lase r lif t o ff procss
The method of claim 5, wherein the sacrificial layer comprises indium nitride or indium gallium nitride.
A method of fabricating a gallium nitride (GaN) based semiconductor device, the method comprising: growing GaN based semiconductor layers on a first surface of a GaN substrate, wherein the GaN based semiconductor layers comprise a semiconductor stack and have a dislocation density of about 5 x 106/cm2 or less; forming a sacrificial layer between the GaN based semiconductor layers and the GaN substrate; 3 SVG 14024179.05-04-2015.I₉A₇DEUFPXXIFW3.CLM15829905.1.1396.158.2247.292.svg 0.447 2.837 Graph Black and white separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique to decrease a thickness of the GaN substrate; and separating a second portion of the GaN substrate from the semiconductor stack using a laser lift-off technique, wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate, and the sacrificial layer is configured to absorb light emitted by the laser.
A method of fabricating a device, the method comprising: forming a sacrificial layer on a GaN substrate; growing at least one GaN based semiconductor layer on the sacrificial layer, wherein the GaN based semiconductor la y er has a dislocation density of about 5 x 106/cm2 or less; [[and]] separating, using a wire, a first portion of the GaN substrate from a remaining portion of the GaN substrate to decrease a thickness of the GaN substrate; removin g the sacrificial la y er and the remainin g portion of the GaN substrate by usin g a laser. 11-12.
canceled
canceled
The method of claim [[12]] 1 0, wherein the sacrificial layer comprises indium nitride or
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting diode with vertical structure
Materials described outside the worked examples.
GaN substrate
GaN
GaN based semiconductor layers
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dislocation Density | ≤ 5000000 /cm2 | GaN based semiconductor layers |
Thickness | 370–490 nm |
Related documents with shared materials, methods, properties, or citations.
sacrificial layer
indium nitride
InN
indium gallium nitride
InGaN
first conductivity type GaN based semiconductor layer
second conductivity type GaN based semiconductor layer
active layer
| — |
sacrificial layer
indium nitride
InN
indium gallium nitride
InGaN
first conductivity type GaN based semiconductor layer
second conductivity type GaN based semiconductor layer
active layer
| — |
sacrificial layer
indium nitride
InN
indium gallium nitride
InGaN
first conductivity type GaN based semiconductor layer
second conductivity type GaN based semiconductor layer
active layer
| — |
sacrificial layer
indium nitride
InN
indium gallium nitride
InGaN
first conductivity type GaN based semiconductor layer
second conductivity type GaN based semiconductor layer
active layer
| — |