Patent
Atlas literature
Patent
US 8,227,819Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1(a) is a cross-sectional schematic of an LED according to one embodiment of the present invention.
Figure 2 is a schematic cross-section of another example of an epitaxial layer structure for a thin p-type GaN layer and AlGaN EBL-free semi-polar LED, comprising an 5 InGaN/GaN MQW or single quantum well (SQW).
Figure 3 is a schematic cross-section of yet another example of an LED according to the present invention.
Figure 4 is a flowchart illustrating a method of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An opto-electronic device, comprising: a light emitting diode (LED) comprised of one or more n-type layers deposited on or above a substrate, one or more active layers for emitting light deposited on or above the n-type layers, and one or more p-type layers deposited on or above the active layers; wherein the p-type layers, the n-type layers and the active layers are comprised of a semi- polar I II -nitride material, wherein the p-type layers have a combined a thickness of 100 nm or less; and wherein the LED does not contain an AlGaN electron blocking layer.
The device of claim 1, wherein the p-type layers have a thickness of at most 50 nm.
The device of claim 1, wherein the active layers comprises one or more quantum well layers, each having a thickness of 4 nm or more.
The device of claim 1, wherein the active layers have a combined thickness and a composition sufficient to capture and confine electron-carriers in the active layers, thereby providing the function of an electron blocking layer.
The device of claim 1, wherein the LED has a higher luminous efficiency, crystal quality, hole injection efficiency, lower series-resistance, operating voltage, and light absorption as compared to an LED with p-type layers having a combined thickness greater than 100 nm and containing an AlGaN blocking layer.
A method for fabricating an opto-electronic device, comprising: fabricating a light emitting diode (LED) comprised of one or more n-type layers deposited on or above a substrate, one or more active layers for emitting light deposited on or above the n-type layers, and one or more p-type layers deposited on or above the active layers; wherein the p-type layers, the n-type layers and the active layers are comprised of a semi- polar I II -nitride material, wherein the p-type layers have a combined a thickness of 100 nm or less, and wherein the LED does not contain an AlGaN electron blocking layer.
The method of claim 8, wherein the p-type layers have a thickness of at most 50 nm.
The method of claim 8, wherein the active layers comprises one or more quantum well layers, each having a thickness of 4 nm or more.
The method of claim 8, wherein the active layers have a combined thickness and a composition sufficient to capture and confine electron-carriers in the active layers, thereby providing the function of an electron blocking layer.
The method of claim 8, wherein the LED has a higher luminous efficiency, crystal quality, hole injection efficiency, lower series-resistance, operating voltage, and light absorption as compared to an LED with p-type layers having a combined thickness greater than 100 nm and containing an AlGaN blocking layer.
Layer stacks claimed or described, ordered top of device to substrate.
semi-polar III-nitride LED without AlGaN EBL
Materials described outside the worked examples.
p-type III-nitride (semi-polar)
semi-polar III-nitride active layer (quantum well)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 150–200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,227,819Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1(a) is a cross-sectional schematic of an LED according to one embodiment of the present invention.
Figure 2 is a schematic cross-section of another example of an epitaxial layer structure for a thin p-type GaN layer and AlGaN EBL-free semi-polar LED, comprising an 5 InGaN/GaN MQW or single quantum well (SQW).
Figure 3 is a schematic cross-section of yet another example of an LED according to the present invention.
Figure 4 is a flowchart illustrating a method of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An opto-electronic device, comprising: a light emitting diode (LED) comprised of one or more n-type layers deposited on or above a substrate, one or more active layers for emitting light deposited on or above the n-type layers, and one or more p-type layers deposited on or above the active layers; wherein the p-type layers, the n-type layers and the active layers are comprised of a semi- polar I II -nitride material, wherein the p-type layers have a combined a thickness of 100 nm or less; and wherein the LED does not contain an AlGaN electron blocking layer.
The device of claim 1, wherein the p-type layers have a thickness of at most 50 nm.
The device of claim 1, wherein the active layers comprises one or more quantum well layers, each having a thickness of 4 nm or more.
The device of claim 1, wherein the active layers have a combined thickness and a composition sufficient to capture and confine electron-carriers in the active layers, thereby providing the function of an electron blocking layer.
The device of claim 1, wherein the LED has a higher luminous efficiency, crystal quality, hole injection efficiency, lower series-resistance, operating voltage, and light absorption as compared to an LED with p-type layers having a combined thickness greater than 100 nm and containing an AlGaN blocking layer.
A method for fabricating an opto-electronic device, comprising: fabricating a light emitting diode (LED) comprised of one or more n-type layers deposited on or above a substrate, one or more active layers for emitting light deposited on or above the n-type layers, and one or more p-type layers deposited on or above the active layers; wherein the p-type layers, the n-type layers and the active layers are comprised of a semi- polar I II -nitride material, wherein the p-type layers have a combined a thickness of 100 nm or less, and wherein the LED does not contain an AlGaN electron blocking layer.
The method of claim 8, wherein the p-type layers have a thickness of at most 50 nm.
The method of claim 8, wherein the active layers comprises one or more quantum well layers, each having a thickness of 4 nm or more.
The method of claim 8, wherein the active layers have a combined thickness and a composition sufficient to capture and confine electron-carriers in the active layers, thereby providing the function of an electron blocking layer.
The method of claim 8, wherein the LED has a higher luminous efficiency, crystal quality, hole injection efficiency, lower series-resistance, operating voltage, and light absorption as compared to an LED with p-type layers having a combined thickness greater than 100 nm and containing an AlGaN blocking layer.
Layer stacks claimed or described, ordered top of device to substrate.
semi-polar III-nitride LED without AlGaN EBL
Materials described outside the worked examples.
p-type III-nitride (semi-polar)
semi-polar III-nitride active layer (quantum well)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 150–200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,227,819Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1(a) is a cross-sectional schematic of an LED according to one embodiment of the present invention.
Figure 2 is a schematic cross-section of another example of an epitaxial layer structure for a thin p-type GaN layer and AlGaN EBL-free semi-polar LED, comprising an 5 InGaN/GaN MQW or single quantum well (SQW).
Figure 3 is a schematic cross-section of yet another example of an LED according to the present invention.
Figure 4 is a flowchart illustrating a method of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An opto-electronic device, comprising: a light emitting diode (LED) comprised of one or more n-type layers deposited on or above a substrate, one or more active layers for emitting light deposited on or above the n-type layers, and one or more p-type layers deposited on or above the active layers; wherein the p-type layers, the n-type layers and the active layers are comprised of a semi- polar I II -nitride material, wherein the p-type layers have a combined a thickness of 100 nm or less; and wherein the LED does not contain an AlGaN electron blocking layer.
The device of claim 1, wherein the p-type layers have a thickness of at most 50 nm.
The device of claim 1, wherein the active layers comprises one or more quantum well layers, each having a thickness of 4 nm or more.
The device of claim 1, wherein the active layers have a combined thickness and a composition sufficient to capture and confine electron-carriers in the active layers, thereby providing the function of an electron blocking layer.
The device of claim 1, wherein the LED has a higher luminous efficiency, crystal quality, hole injection efficiency, lower series-resistance, operating voltage, and light absorption as compared to an LED with p-type layers having a combined thickness greater than 100 nm and containing an AlGaN blocking layer.
A method for fabricating an opto-electronic device, comprising: fabricating a light emitting diode (LED) comprised of one or more n-type layers deposited on or above a substrate, one or more active layers for emitting light deposited on or above the n-type layers, and one or more p-type layers deposited on or above the active layers; wherein the p-type layers, the n-type layers and the active layers are comprised of a semi- polar I II -nitride material, wherein the p-type layers have a combined a thickness of 100 nm or less, and wherein the LED does not contain an AlGaN electron blocking layer.
The method of claim 8, wherein the p-type layers have a thickness of at most 50 nm.
The method of claim 8, wherein the active layers comprises one or more quantum well layers, each having a thickness of 4 nm or more.
The method of claim 8, wherein the active layers have a combined thickness and a composition sufficient to capture and confine electron-carriers in the active layers, thereby providing the function of an electron blocking layer.
The method of claim 8, wherein the LED has a higher luminous efficiency, crystal quality, hole injection efficiency, lower series-resistance, operating voltage, and light absorption as compared to an LED with p-type layers having a combined thickness greater than 100 nm and containing an AlGaN blocking layer.
Layer stacks claimed or described, ordered top of device to substrate.
semi-polar III-nitride LED without AlGaN EBL
Materials described outside the worked examples.
p-type III-nitride (semi-polar)
semi-polar III-nitride active layer (quantum well)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 150–200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,227,819Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1(a) is a cross-sectional schematic of an LED according to one embodiment of the present invention.
Figure 2 is a schematic cross-section of another example of an epitaxial layer structure for a thin p-type GaN layer and AlGaN EBL-free semi-polar LED, comprising an 5 InGaN/GaN MQW or single quantum well (SQW).
Figure 3 is a schematic cross-section of yet another example of an LED according to the present invention.
Figure 4 is a flowchart illustrating a method of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An opto-electronic device, comprising: a light emitting diode (LED) comprised of one or more n-type layers deposited on or above a substrate, one or more active layers for emitting light deposited on or above the n-type layers, and one or more p-type layers deposited on or above the active layers; wherein the p-type layers, the n-type layers and the active layers are comprised of a semi- polar I II -nitride material, wherein the p-type layers have a combined a thickness of 100 nm or less; and wherein the LED does not contain an AlGaN electron blocking layer.
The device of claim 1, wherein the p-type layers have a thickness of at most 50 nm.
The device of claim 1, wherein the active layers comprises one or more quantum well layers, each having a thickness of 4 nm or more.
The device of claim 1, wherein the active layers have a combined thickness and a composition sufficient to capture and confine electron-carriers in the active layers, thereby providing the function of an electron blocking layer.
The device of claim 1, wherein the LED has a higher luminous efficiency, crystal quality, hole injection efficiency, lower series-resistance, operating voltage, and light absorption as compared to an LED with p-type layers having a combined thickness greater than 100 nm and containing an AlGaN blocking layer.
A method for fabricating an opto-electronic device, comprising: fabricating a light emitting diode (LED) comprised of one or more n-type layers deposited on or above a substrate, one or more active layers for emitting light deposited on or above the n-type layers, and one or more p-type layers deposited on or above the active layers; wherein the p-type layers, the n-type layers and the active layers are comprised of a semi- polar I II -nitride material, wherein the p-type layers have a combined a thickness of 100 nm or less, and wherein the LED does not contain an AlGaN electron blocking layer.
The method of claim 8, wherein the p-type layers have a thickness of at most 50 nm.
The method of claim 8, wherein the active layers comprises one or more quantum well layers, each having a thickness of 4 nm or more.
The method of claim 8, wherein the active layers have a combined thickness and a composition sufficient to capture and confine electron-carriers in the active layers, thereby providing the function of an electron blocking layer.
The method of claim 8, wherein the LED has a higher luminous efficiency, crystal quality, hole injection efficiency, lower series-resistance, operating voltage, and light absorption as compared to an LED with p-type layers having a combined thickness greater than 100 nm and containing an AlGaN blocking layer.
Layer stacks claimed or described, ordered top of device to substrate.
semi-polar III-nitride LED without AlGaN EBL
Materials described outside the worked examples.
p-type III-nitride (semi-polar)
semi-polar III-nitride active layer (quantum well)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 150–200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
n-type III-nitride (semi-polar)
InGaN
semi-polar GaN substrate
GaN
| — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 1 nm | — |
n-type III-nitride (semi-polar)
InGaN
semi-polar GaN substrate
GaN
| — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 1 nm | — |
n-type III-nitride (semi-polar)
InGaN
semi-polar GaN substrate
GaN
| — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 1 nm | — |
n-type III-nitride (semi-polar)
InGaN
semi-polar GaN substrate
GaN
| — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 1 nm | — |
