INDIUM GALLIUM NITRIDE LIGHT EMITTING DEVICES

Michael R. KRAMES

Patent

Atlas literature

Patent

US 9,978,904

INDIUM GALLIUM NITRIDE LIGHT EMITTING DEVICES

Michael R. Krames, Mark D'Evelyn, Akimori Koukitu, Yoshinao Kumagai et al.

SORAA, INC.·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

13 independent · 15 dependent

1
Independent
1- 14 Canceled
14
Independent
Canceled
15
IndependentGaNInGaNoptoelectronic device structureInGaN-template-based light emitting device
A method of fabricating a light emitting device comprising: providing a ﬁrst substrate having a crystallographic orientation within about 5 degrees of a -c-plane, the ﬁrst substrate comprising a bulk gallium nitride substrate, wherein the bulk gallium nitride substrate is a single layer havinga top surface of wurtzite G aN; fabricating an InGaN template by growing an InGaN epitaxial layer having a selected InN composition by hydride vapor phase epitaxy on said bulk gallium nitride such that said InGaN epitaxial layer directly contacts said top surface, wherein said InGaN epitaxial layer has a thickness greater than 4 p m and comprises an InN mole fraction greater than 0.5 %, wherein the InGaN epitaxial layer is relaxed, having a-axis and c-axis lattice constants within 0. 1% of the respective equilibrium lattice constants for a speciﬁc indium-containing nitride composition; and growing an optoelectronic device structure on one of the InGaN template or a derivative of the InGaN template. Currently amended
1. 16
  Dependent← claim 15InGaN
  The method of claim 15, wherein the growing of the InGaN epitaxial layer is characterized by a crystallographic orientation that is miscut from said -c-plane. Previously presented
2. 17
  Dependent← claim 15GaN
  The method of claim 15, wherein the bulk GaN is substantially indium-free. Previously presented
3. 20
  Dependent← claim 15InGaN
  The method of claim 15, wherein growing the InGaN epitaxial layer having the selected InN composition on the ﬁrst substrate is performed by growing a series of graded InGaN epitaxial layers, wherein each graded InGaN epitaxial layer comprises an increasing InN mole fraction. Previously presented
4. 21
  Dependent← claim 15InGaN
  The method of claim 15, wherein growing the InGaN epitaxial layer having the selected InN composition on the ﬁrst substrate is performed by growing a layer having a continuously-graded InN composition. Previously presented
5. 22
  Dependent← claim 15InGaNInGaN
  The method of claim 15, further comprising separating the InGaN layer having the selected InN composition from the ﬁrst substrate to form a free-standing InGaN crystal. Previously presented
6. 24
  Dependent← claim 15light emitting diode (LED)laser diode (LD)
  The method of claim 15, further comprising incorporating the optoelectronic device structure into a light emitting diode or a laser diode. Original
7. 32
  Dependent← claim 15InGaN
  The method of claim 15, wherein the InGaN epitaxial layer is characterized by a single (-1-14) x-ray diﬀraction peak within a reciprocal space map. Previously presented
8. 33
  Dependent← claim 15optoelectronic device structureInGaN-template-based light emitting device
  The method of claim 15, wherein the optoelectronic device structure is grown directly on one of the InGaN template or a derivative of the InGaN templat. Previously presented
9. 34
  Dependent← claim 15InGaN
  The method of claim 15, wherein the derivative of the InGaN template is a free-standing InGaN crystal or wafer formed from the InGaN template. Previously presented
10. 35
  Dependent← claim 15InGaN
  The method of claim 15, wherein the derivative of the InGaN template is a free-standing InGaN crystal or wafer formed from a process wherein the InGaN template or a portion thereof is used as a seed for bulk crystal growth. Previously presented
18
Independent
Canceled
19
Independent
Canceled
26
Independent
26-30 Canceled
30
Independent
Canceled
36
Independent
Canceled
37
IndependentGaNInGaNoptoelectronic device structureInGaN-template-based light emitting device
A method of fabricating a light emitting device comprising: providing a ﬁrst substrate having a crystallographic orientation within about 5 degrees of a -c-plane, the ﬁrst substrate comprising a bulk gallium nitride substrate, wherein the bulk gallium nitride substrate is a single la y er having a top surface; fabricating an InGaN template by growing an InGaN epitaxial layer having a selected InN composition by hydride vapor phase epitaxy on said bulk gallium nitride substrate such that said InGaN epitaxial layer directly contacts said top surface, wherein the InGaN epitaxial layer has a thickness greater than 4 p m and comprises an InN mole fraction greater than 0.5 %; growing an optoelectronic device structure on a second substrate selected from one of the InGaN template and a derivative of the InGaN template; and wherein the InGaN epitaxial layer is relaxed, having a-axis and c-axis lattice constants within 0.1 % of the respective equilibrium lattice constants for a speciﬁc indium- containing nitride composition. Currently amended
1. 38
  Dependent← claim 37GaN
  The method of claim 37, wherein the top surface comprises wurtzite GaN. Previously presented
39
Independent
Canceled
40
IndependentGaNInGaNoptoelectronic device structureInGaN-template-based light emitting device
A light emitting device made from a process comprising: providing a ﬁrst substrate having a crystallographic orientation within about 5 degrees of a -c-plane, the ﬁrst substrate comprising a bulk gallium nitride substrate, wherein the bulk gallium nitride substrate is a single la y er having a top surface; fabricating an InGaN template by growing an InGaN epitaxial layer having a selected InN composition by hydride vapor phase epitaxy on said bulk gallium nitride substrate such that said InGaN epitaxial layer directly contacts said top surface, wherein the InGaN epitaxial layer has a thickness greater than 4 p m and comprises an InN mole fraction greater than 0.5 %; growing an optoelectronic device structure on a second substrate selected from one of the InGaN template and a derivative of the InGaN template; and wherein the InGaN epitaxial la y er is relaxed, having a-axis and c-axis lattice constants within 0. 1% of the respective equilibrium lattice constants for a speciﬁc indium- containing nitride composition. Currently amended
1. 41
  Dependent← claim 40GaN
  The light emitting device of claim 40, wherein the top surface of comprises wurtzite GaN. Currently amended
42
Independent
42-44 Canceled
44
Independent
Canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

InGaN-template-based light emitting device

optoelectronic device structureoptoelectronic device structure

InGaNtemplate

GaNsubstrate

light emitting diode (LED)

No layer stack recorded.

laser diode (LD)

No layer stack recorded.

Materials

Materials described outside the worked examples.

bulk gallium nitride (wurtzite GaN)

GaN

Substrate

InGaN epitaxial layer

InGaN

Process steps

Additional fabrication and treatment steps described in the patent.

Hvpe Growth

Step 1

Process details

inert gas:N2, He, or Ar

substrate:bulk GaN (000-1) c-plane

precursors:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	390–700 nm	—
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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