Patent
US 8,476,615OF THE I NVENTION
Yohei Enya
US
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Patent
Atlas literature
Patent
US 8,476,615Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based semiconductor light emitting device, comprising: a substrate of a first GaN-based semiconductor having a primary 5 surface, the primary surface tilting from a plane normal to a reference axis being the axis [0 0 0 1] or [0 0 0 -1] of the first GaN-based semiconductor toward the m -axis of the first GaN-based semiconductor at a tilt angle of more than or equal to 63 degrees and less than 80 degrees; 10 a GaN-based semiconductor epitaxial region provided on the primary surface; an active layer provided on the GaN-based semiconductor epitaxial region; an electron blocking layer provided on the active layer; and 15 a contact layer provided on the electron blocking layer, wherein: the active layer comprises a second GaN-based semiconductor, the second GAN-based semiconductor containing indium; the electron blocking layer comprises a third GaN-based 20 semiconductor, the third GaN-based semiconductor having a bandgap larger than the bandgap of the second GaN-based semiconductor; the contact layer comprises of a fourth GaN-based semiconductor, the fourth GaN-based semiconductor having a bandgap equal to or less than the bandgap of the third GaN-based semiconductor; 25 and the first GaN-based semiconductor of the substrate has a 37 FP₁ 1 -0025- OO US-SE dislocation density of 1x107 cm⁻² or less.
The GaN-based semiconductor light emitting device according to claim 1, wherein the tilt angle of the substrate is 70 degrees or more.
3. The GaN-based semiconductor light emitting device according to claim 1, wherein the active layer is provided so as to emit light of a wavelength range of 400 nm to 650 nm.
The GaN-based semiconductor light emitting device 15 according to claim 1, wherein the second GaN-based semiconductor comprises In,2 Aly2Ga -,2- y2N (0 < x2 <1, 0 < y2 < 1).
The GaN-based semiconductor light emitting device according to claim 1, wherein the third GaN-based semiconductor comprises Inx3Aly 3Ga i-x3-y 3N (0 x3 1, 0 y3 < 1), and the lattice constant of the third GaN-based semiconductor is equal to or less than the lattice constant of the first GaN-based semiconductor.
The GaN-based semiconductor light emitting device according to claim 1, wherein the GaN-based semiconductor light emitting device is a light emitting diode.
FP 11 -0025- OO US-SE 11. The method for making the GaN-based semiconductor light emitting device according to claim 10, wherein the tilt angle of the primary surface of the wafer is 70 degrees or more.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor light emitting device
Materials described outside the worked examples.
first GaN-based semiconductor (substrate)
GaN
second GaN-based semiconductor (active layer, indium-containing)
InxAlyGa(1-x-y)N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density of substrate (claimed upper bound) | ≤ 10000000 cm⁻² | GaN |
Thickness | 0.5–10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,476,615Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based semiconductor light emitting device, comprising: a substrate of a first GaN-based semiconductor having a primary 5 surface, the primary surface tilting from a plane normal to a reference axis being the axis [0 0 0 1] or [0 0 0 -1] of the first GaN-based semiconductor toward the m -axis of the first GaN-based semiconductor at a tilt angle of more than or equal to 63 degrees and less than 80 degrees; 10 a GaN-based semiconductor epitaxial region provided on the primary surface; an active layer provided on the GaN-based semiconductor epitaxial region; an electron blocking layer provided on the active layer; and 15 a contact layer provided on the electron blocking layer, wherein: the active layer comprises a second GaN-based semiconductor, the second GAN-based semiconductor containing indium; the electron blocking layer comprises a third GaN-based 20 semiconductor, the third GaN-based semiconductor having a bandgap larger than the bandgap of the second GaN-based semiconductor; the contact layer comprises of a fourth GaN-based semiconductor, the fourth GaN-based semiconductor having a bandgap equal to or less than the bandgap of the third GaN-based semiconductor; 25 and the first GaN-based semiconductor of the substrate has a 37 FP₁ 1 -0025- OO US-SE dislocation density of 1x107 cm⁻² or less.
The GaN-based semiconductor light emitting device according to claim 1, wherein the tilt angle of the substrate is 70 degrees or more.
3. The GaN-based semiconductor light emitting device according to claim 1, wherein the active layer is provided so as to emit light of a wavelength range of 400 nm to 650 nm.
The GaN-based semiconductor light emitting device 15 according to claim 1, wherein the second GaN-based semiconductor comprises In,2 Aly2Ga -,2- y2N (0 < x2 <1, 0 < y2 < 1).
The GaN-based semiconductor light emitting device according to claim 1, wherein the third GaN-based semiconductor comprises Inx3Aly 3Ga i-x3-y 3N (0 x3 1, 0 y3 < 1), and the lattice constant of the third GaN-based semiconductor is equal to or less than the lattice constant of the first GaN-based semiconductor.
The GaN-based semiconductor light emitting device according to claim 1, wherein the GaN-based semiconductor light emitting device is a light emitting diode.
FP 11 -0025- OO US-SE 11. The method for making the GaN-based semiconductor light emitting device according to claim 10, wherein the tilt angle of the primary surface of the wafer is 70 degrees or more.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor light emitting device
Materials described outside the worked examples.
first GaN-based semiconductor (substrate)
GaN
second GaN-based semiconductor (active layer, indium-containing)
InxAlyGa(1-x-y)N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density of substrate (claimed upper bound) | ≤ 10000000 cm⁻² | GaN |
Thickness | 0.5–10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,476,615Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based semiconductor light emitting device, comprising: a substrate of a first GaN-based semiconductor having a primary 5 surface, the primary surface tilting from a plane normal to a reference axis being the axis [0 0 0 1] or [0 0 0 -1] of the first GaN-based semiconductor toward the m -axis of the first GaN-based semiconductor at a tilt angle of more than or equal to 63 degrees and less than 80 degrees; 10 a GaN-based semiconductor epitaxial region provided on the primary surface; an active layer provided on the GaN-based semiconductor epitaxial region; an electron blocking layer provided on the active layer; and 15 a contact layer provided on the electron blocking layer, wherein: the active layer comprises a second GaN-based semiconductor, the second GAN-based semiconductor containing indium; the electron blocking layer comprises a third GaN-based 20 semiconductor, the third GaN-based semiconductor having a bandgap larger than the bandgap of the second GaN-based semiconductor; the contact layer comprises of a fourth GaN-based semiconductor, the fourth GaN-based semiconductor having a bandgap equal to or less than the bandgap of the third GaN-based semiconductor; 25 and the first GaN-based semiconductor of the substrate has a 37 FP₁ 1 -0025- OO US-SE dislocation density of 1x107 cm⁻² or less.
The GaN-based semiconductor light emitting device according to claim 1, wherein the tilt angle of the substrate is 70 degrees or more.
3. The GaN-based semiconductor light emitting device according to claim 1, wherein the active layer is provided so as to emit light of a wavelength range of 400 nm to 650 nm.
The GaN-based semiconductor light emitting device 15 according to claim 1, wherein the second GaN-based semiconductor comprises In,2 Aly2Ga -,2- y2N (0 < x2 <1, 0 < y2 < 1).
The GaN-based semiconductor light emitting device according to claim 1, wherein the third GaN-based semiconductor comprises Inx3Aly 3Ga i-x3-y 3N (0 x3 1, 0 y3 < 1), and the lattice constant of the third GaN-based semiconductor is equal to or less than the lattice constant of the first GaN-based semiconductor.
The GaN-based semiconductor light emitting device according to claim 1, wherein the GaN-based semiconductor light emitting device is a light emitting diode.
FP 11 -0025- OO US-SE 11. The method for making the GaN-based semiconductor light emitting device according to claim 10, wherein the tilt angle of the primary surface of the wafer is 70 degrees or more.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor light emitting device
Materials described outside the worked examples.
first GaN-based semiconductor (substrate)
GaN
second GaN-based semiconductor (active layer, indium-containing)
InxAlyGa(1-x-y)N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density of substrate (claimed upper bound) | ≤ 10000000 cm⁻² | GaN |
Thickness | 0.5–10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,476,615Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based semiconductor light emitting device, comprising: a substrate of a first GaN-based semiconductor having a primary 5 surface, the primary surface tilting from a plane normal to a reference axis being the axis [0 0 0 1] or [0 0 0 -1] of the first GaN-based semiconductor toward the m -axis of the first GaN-based semiconductor at a tilt angle of more than or equal to 63 degrees and less than 80 degrees; 10 a GaN-based semiconductor epitaxial region provided on the primary surface; an active layer provided on the GaN-based semiconductor epitaxial region; an electron blocking layer provided on the active layer; and 15 a contact layer provided on the electron blocking layer, wherein: the active layer comprises a second GaN-based semiconductor, the second GAN-based semiconductor containing indium; the electron blocking layer comprises a third GaN-based 20 semiconductor, the third GaN-based semiconductor having a bandgap larger than the bandgap of the second GaN-based semiconductor; the contact layer comprises of a fourth GaN-based semiconductor, the fourth GaN-based semiconductor having a bandgap equal to or less than the bandgap of the third GaN-based semiconductor; 25 and the first GaN-based semiconductor of the substrate has a 37 FP₁ 1 -0025- OO US-SE dislocation density of 1x107 cm⁻² or less.
The GaN-based semiconductor light emitting device according to claim 1, wherein the tilt angle of the substrate is 70 degrees or more.
3. The GaN-based semiconductor light emitting device according to claim 1, wherein the active layer is provided so as to emit light of a wavelength range of 400 nm to 650 nm.
The GaN-based semiconductor light emitting device 15 according to claim 1, wherein the second GaN-based semiconductor comprises In,2 Aly2Ga -,2- y2N (0 < x2 <1, 0 < y2 < 1).
The GaN-based semiconductor light emitting device according to claim 1, wherein the third GaN-based semiconductor comprises Inx3Aly 3Ga i-x3-y 3N (0 x3 1, 0 y3 < 1), and the lattice constant of the third GaN-based semiconductor is equal to or less than the lattice constant of the first GaN-based semiconductor.
The GaN-based semiconductor light emitting device according to claim 1, wherein the GaN-based semiconductor light emitting device is a light emitting diode.
FP 11 -0025- OO US-SE 11. The method for making the GaN-based semiconductor light emitting device according to claim 10, wherein the tilt angle of the primary surface of the wafer is 70 degrees or more.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor light emitting device
Materials described outside the worked examples.
first GaN-based semiconductor (substrate)
GaN
second GaN-based semiconductor (active layer, indium-containing)
InxAlyGa(1-x-y)N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density of substrate (claimed upper bound) | ≤ 10000000 cm⁻² | GaN |
Thickness | 0.5–10 nm |
Related documents with shared materials, methods, properties, or citations.
third GaN-based semiconductor (electron blocking layer)
Inx3Aly3Ga(1-x3-y3)N
| — |
Thickness | 440–540 nm | — |
Thickness | 1e-7 cm | — |
Thickness | 400–650 nm | — |
Thickness | 440–490 nm | — |
third GaN-based semiconductor (electron blocking layer)
Inx3Aly3Ga(1-x3-y3)N
| — |
Thickness | 440–540 nm | — |
Thickness | 1e-7 cm | — |
Thickness | 400–650 nm | — |
Thickness | 440–490 nm | — |
third GaN-based semiconductor (electron blocking layer)
Inx3Aly3Ga(1-x3-y3)N
| — |
Thickness | 440–540 nm | — |
Thickness | 1e-7 cm | — |
Thickness | 400–650 nm | — |
Thickness | 440–490 nm | — |
third GaN-based semiconductor (electron blocking layer)
Inx3Aly3Ga(1-x3-y3)N
| — |
Thickness | 440–540 nm | — |
Thickness | 1e-7 cm | — |
Thickness | 400–650 nm | — |
Thickness | 440–490 nm | — |