Patent
US 8,018,029GALLIUM NITRIDE-BASED EPITAXIAL WAFER AND METHOD OF FABRICATING EPITAXIAL WAFER
Yusuke YOSHIZUMI, Masaki UENO, Takao NAKAMURA
2011-09-13·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,018,029Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based epitaxial wafer for a nitride light-emitting device, comprising: a gallium nitride substrate having a primary surface; 5 at least one gallium nitride-based semiconductor film provided on the primary surface of the gallium nitride substrate; and, an active layer provided on the gallium nitride-based semiconductor film, the active layer having a quantum well structure; the active layer including a well layer of a gallium nitride-based 10 semiconductor, the gallium nitride-based semiconductor containing indium as a Group III element, a normal line of the primary surface and a C-axis of the gallium nitride substrate forming an off angle with each other, the off angle being distributed on the primary surface, the off angle monotonically increasing on a line, the line extending from one 15 point to another point through a center point of the primary surface of the gallium nitride substrate, the one point and the another point being on an edge of the primary surface, indium contents of the well layer defined at n points (n: integer) on the line monotonically decreasing in a direction from the one point to the another point, and the thickness 20 values of the well layer defined at the n points monotonically increasing in the direction.
The gallium nitride-based epitaxial wafer according to claim 1, wherein the primary surface has a number of areas defined on the line for an arrangement of nitride light-emitting devices, 25 and each of the areas includes at least one of the n points.
The gallium nitride-based epitaxial wafer 32 FP₀ 9-0277- OO US-SE according to claim 1, wherein the thickness is defined as an average at each of the n points, and the average is defined as S/L, where symbol "L" represents a predetermined length in a cross sectional image of the well layer and the predetermined length is defined in the cross sectional 5 image in a direction perpendicular to an axis extending from the gallium nitride substrate to the active layer, and symbol "S" represents a planer dimension of the well layer defi n ed in the predetermined length "L" in the cross sectional image.
The gallium nitride-based epitaxial wafer 10 according to claim 1, wherein an off angle at a first point on the primary surface is smaller than an off angle at a second point on the primary surface, a thickness of the well layer at the first point on the primary surface is smaller than a thickness of the well layer at the second point on the primary surface, and the first and second points are located in the 15 areas for separate nitride light-emitting devices.
The gallium nitride-based epitaxial wafer according to claim 1, wherein the line is defined such that the primary surface is perpendicular to a reference plane defined by the line and one of crystal axis <1-100> and <11-20>.
20 Claim 6. The gallium nitride-based epitaxial wafer according to of claim 1, wherein the gallium nitride wafer includes an orientation flat and a substantially circular edge defined by the center point, and the direction of the orientation flat is associated with one of the crystal orientation <1-100> and <11-20>.
25 Claim 7. The gallium nitride-based epitaxial wafer according to claim 1, wherein the gallium nitride wafer includes an edge 33 FP₀ 9-0277- OO US-SE of a substantial circle, the center point of the primary surface is at a center of the substantial circle, the gallium nitride wafer includes a marker, and the marker represents one of crystal orientation <1-100> and <11-20>.
5 Claim 8. The gallium nitride-based epitaxial wafer according to claim 1, wherein a difference between a maximum value and a minimum value of the off-angle on the line passing through the center of the primary surface of the gallium nitride substrate is less than or equal to 0.7 degree.
10 Claim 9. A method of fabricating an epitaxial wafer for a nitride light-emitting device, comprising the steps of: growing a first gallium nitride-based semiconductor film on a primary surface of each of a plurality of gallium nitride substrates, the gallium nitride substrates being located on a susceptor of an 15. organometallic vapor phase epitaxy reactor; growing an active layer on the first gallium nitride-based semiconductor film in the organometallic vapor phase epitaxy reactor while supplying raw material gas, the active layer having a quantum well structure; and 20 growing a second gallium nitride-based semiconductor film on the active layer in the organometallic vapor phase epitaxy reactor, one of the first gallium nitride-based semiconductor film and the second gallium nitride-based semiconductor film being doped with n-type dopant, another of the first gallium nitride-based semiconductor 25 film and the second gallium nitride-based semiconductor film being doped with p-type dopant, the active layer including a well layer of a 34 FP₀ 9-0277- OO US-SE gallium nitride-based semiconductor, the gallium nitride-based semiconductor containing indium as a Group III element, a normal line of the primary surface and a C-axis of each gallium nitride substrate forming an off angle with each other, the off angle being distributed 5 over the primary surface, and the off angle monotonically varying along a line, the line extending from one point to another point through a center point of the primary surface of the gallium nitride substrate, the one point and the another point being on an edge of the primary surface, the off angle at the one point on the edge being larger than that at the 10 another point of the primary surface, the well layer being grown with rotation of the susceptor, the rotation of the susceptor and flow of raw material gas along a flow axis from upstream to downstream of the raw material gas causing a distribution of a growth rate of the well layer, and the distribution of the growth rate having a large growth rate at the one 15 point, and the distribution of the growth rate having a small growth rate at the another point.
The method according to claim 9, wherein the thickness is defined as an average in each of the n points, and the average is defined as S/L, where symbol "L" represents a predetermined length in a cross sectional image of the well layer and the predetermined length is defined in a direction perpendicular to an axis extending from the gallium nitride substrate to the active layer, and symbol " S" represents a planer dimension of the well layer defined in the predetermined length "L" in the cross sectional image.
25 Claim 11. The method according to claim 9, wherein an off angle at a first point on the primary surface is smaller than an off angle 35 FP₀ 9-0277- OO US-SE at a second point on the primary surface, a thickness of the well layer at the first point on the primary surface is smaller than a thickness of the well layer at the second point on the primary surface, and the first and second points are located in separate nitride light-emitting devices.
5 Claim 12. The method according to claim 9, wherein the raw material gas for forming the active layer flows in a direction of traverse from one end to an opposite end of the primary surface of the susceptor in the organometallic vapor phase epitaxy reactor.
The method according to claim 9, wherein the 10 raw material gas to form the active layer is flown in a direction of an axis intersecting the primary surface of the susceptor.
The method according to claim 9, wherein the susceptor includes a plurality of wafer guides for positioning gallium nitride substrates and the wafer guides are arranged on a circumference defined on the primary surface of the susceptor, and the line of each gallium nitride substrate is oriented in a direction intersecting a tangent line of the circumference on the primary surface of the susceptor.
The method according to claim 9, further comprising the step of loading the gallium nitride substrates on the 20 susceptor.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based epitaxial wafer for nitride light-emitting device
Materials described outside the worked examples.
gallium nitride substrate
GaN
gallium nitride-based semiconductor film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
off-angle difference (max minus min) on line through center of GaN substrate primary surface | ≤ 0.7 degree | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,018,029Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based epitaxial wafer for a nitride light-emitting device, comprising: a gallium nitride substrate having a primary surface; 5 at least one gallium nitride-based semiconductor film provided on the primary surface of the gallium nitride substrate; and, an active layer provided on the gallium nitride-based semiconductor film, the active layer having a quantum well structure; the active layer including a well layer of a gallium nitride-based 10 semiconductor, the gallium nitride-based semiconductor containing indium as a Group III element, a normal line of the primary surface and a C-axis of the gallium nitride substrate forming an off angle with each other, the off angle being distributed on the primary surface, the off angle monotonically increasing on a line, the line extending from one 15 point to another point through a center point of the primary surface of the gallium nitride substrate, the one point and the another point being on an edge of the primary surface, indium contents of the well layer defined at n points (n: integer) on the line monotonically decreasing in a direction from the one point to the another point, and the thickness 20 values of the well layer defined at the n points monotonically increasing in the direction.
The gallium nitride-based epitaxial wafer according to claim 1, wherein the primary surface has a number of areas defined on the line for an arrangement of nitride light-emitting devices, 25 and each of the areas includes at least one of the n points.
The gallium nitride-based epitaxial wafer 32 FP₀ 9-0277- OO US-SE according to claim 1, wherein the thickness is defined as an average at each of the n points, and the average is defined as S/L, where symbol "L" represents a predetermined length in a cross sectional image of the well layer and the predetermined length is defined in the cross sectional 5 image in a direction perpendicular to an axis extending from the gallium nitride substrate to the active layer, and symbol "S" represents a planer dimension of the well layer defi n ed in the predetermined length "L" in the cross sectional image.
The gallium nitride-based epitaxial wafer 10 according to claim 1, wherein an off angle at a first point on the primary surface is smaller than an off angle at a second point on the primary surface, a thickness of the well layer at the first point on the primary surface is smaller than a thickness of the well layer at the second point on the primary surface, and the first and second points are located in the 15 areas for separate nitride light-emitting devices.
The gallium nitride-based epitaxial wafer according to claim 1, wherein the line is defined such that the primary surface is perpendicular to a reference plane defined by the line and one of crystal axis <1-100> and <11-20>.
20 Claim 6. The gallium nitride-based epitaxial wafer according to of claim 1, wherein the gallium nitride wafer includes an orientation flat and a substantially circular edge defined by the center point, and the direction of the orientation flat is associated with one of the crystal orientation <1-100> and <11-20>.
25 Claim 7. The gallium nitride-based epitaxial wafer according to claim 1, wherein the gallium nitride wafer includes an edge 33 FP₀ 9-0277- OO US-SE of a substantial circle, the center point of the primary surface is at a center of the substantial circle, the gallium nitride wafer includes a marker, and the marker represents one of crystal orientation <1-100> and <11-20>.
5 Claim 8. The gallium nitride-based epitaxial wafer according to claim 1, wherein a difference between a maximum value and a minimum value of the off-angle on the line passing through the center of the primary surface of the gallium nitride substrate is less than or equal to 0.7 degree.
10 Claim 9. A method of fabricating an epitaxial wafer for a nitride light-emitting device, comprising the steps of: growing a first gallium nitride-based semiconductor film on a primary surface of each of a plurality of gallium nitride substrates, the gallium nitride substrates being located on a susceptor of an 15. organometallic vapor phase epitaxy reactor; growing an active layer on the first gallium nitride-based semiconductor film in the organometallic vapor phase epitaxy reactor while supplying raw material gas, the active layer having a quantum well structure; and 20 growing a second gallium nitride-based semiconductor film on the active layer in the organometallic vapor phase epitaxy reactor, one of the first gallium nitride-based semiconductor film and the second gallium nitride-based semiconductor film being doped with n-type dopant, another of the first gallium nitride-based semiconductor 25 film and the second gallium nitride-based semiconductor film being doped with p-type dopant, the active layer including a well layer of a 34 FP₀ 9-0277- OO US-SE gallium nitride-based semiconductor, the gallium nitride-based semiconductor containing indium as a Group III element, a normal line of the primary surface and a C-axis of each gallium nitride substrate forming an off angle with each other, the off angle being distributed 5 over the primary surface, and the off angle monotonically varying along a line, the line extending from one point to another point through a center point of the primary surface of the gallium nitride substrate, the one point and the another point being on an edge of the primary surface, the off angle at the one point on the edge being larger than that at the 10 another point of the primary surface, the well layer being grown with rotation of the susceptor, the rotation of the susceptor and flow of raw material gas along a flow axis from upstream to downstream of the raw material gas causing a distribution of a growth rate of the well layer, and the distribution of the growth rate having a large growth rate at the one 15 point, and the distribution of the growth rate having a small growth rate at the another point.
The method according to claim 9, wherein the thickness is defined as an average in each of the n points, and the average is defined as S/L, where symbol "L" represents a predetermined length in a cross sectional image of the well layer and the predetermined length is defined in a direction perpendicular to an axis extending from the gallium nitride substrate to the active layer, and symbol " S" represents a planer dimension of the well layer defined in the predetermined length "L" in the cross sectional image.
25 Claim 11. The method according to claim 9, wherein an off angle at a first point on the primary surface is smaller than an off angle 35 FP₀ 9-0277- OO US-SE at a second point on the primary surface, a thickness of the well layer at the first point on the primary surface is smaller than a thickness of the well layer at the second point on the primary surface, and the first and second points are located in separate nitride light-emitting devices.
5 Claim 12. The method according to claim 9, wherein the raw material gas for forming the active layer flows in a direction of traverse from one end to an opposite end of the primary surface of the susceptor in the organometallic vapor phase epitaxy reactor.
The method according to claim 9, wherein the 10 raw material gas to form the active layer is flown in a direction of an axis intersecting the primary surface of the susceptor.
The method according to claim 9, wherein the susceptor includes a plurality of wafer guides for positioning gallium nitride substrates and the wafer guides are arranged on a circumference defined on the primary surface of the susceptor, and the line of each gallium nitride substrate is oriented in a direction intersecting a tangent line of the circumference on the primary surface of the susceptor.
The method according to claim 9, further comprising the step of loading the gallium nitride substrates on the 20 susceptor.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based epitaxial wafer for nitride light-emitting device
Materials described outside the worked examples.
gallium nitride substrate
GaN
gallium nitride-based semiconductor film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
off-angle difference (max minus min) on line through center of GaN substrate primary surface | ≤ 0.7 degree | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,018,029Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based epitaxial wafer for a nitride light-emitting device, comprising: a gallium nitride substrate having a primary surface; 5 at least one gallium nitride-based semiconductor film provided on the primary surface of the gallium nitride substrate; and, an active layer provided on the gallium nitride-based semiconductor film, the active layer having a quantum well structure; the active layer including a well layer of a gallium nitride-based 10 semiconductor, the gallium nitride-based semiconductor containing indium as a Group III element, a normal line of the primary surface and a C-axis of the gallium nitride substrate forming an off angle with each other, the off angle being distributed on the primary surface, the off angle monotonically increasing on a line, the line extending from one 15 point to another point through a center point of the primary surface of the gallium nitride substrate, the one point and the another point being on an edge of the primary surface, indium contents of the well layer defined at n points (n: integer) on the line monotonically decreasing in a direction from the one point to the another point, and the thickness 20 values of the well layer defined at the n points monotonically increasing in the direction.
The gallium nitride-based epitaxial wafer according to claim 1, wherein the primary surface has a number of areas defined on the line for an arrangement of nitride light-emitting devices, 25 and each of the areas includes at least one of the n points.
The gallium nitride-based epitaxial wafer 32 FP₀ 9-0277- OO US-SE according to claim 1, wherein the thickness is defined as an average at each of the n points, and the average is defined as S/L, where symbol "L" represents a predetermined length in a cross sectional image of the well layer and the predetermined length is defined in the cross sectional 5 image in a direction perpendicular to an axis extending from the gallium nitride substrate to the active layer, and symbol "S" represents a planer dimension of the well layer defi n ed in the predetermined length "L" in the cross sectional image.
The gallium nitride-based epitaxial wafer 10 according to claim 1, wherein an off angle at a first point on the primary surface is smaller than an off angle at a second point on the primary surface, a thickness of the well layer at the first point on the primary surface is smaller than a thickness of the well layer at the second point on the primary surface, and the first and second points are located in the 15 areas for separate nitride light-emitting devices.
The gallium nitride-based epitaxial wafer according to claim 1, wherein the line is defined such that the primary surface is perpendicular to a reference plane defined by the line and one of crystal axis <1-100> and <11-20>.
20 Claim 6. The gallium nitride-based epitaxial wafer according to of claim 1, wherein the gallium nitride wafer includes an orientation flat and a substantially circular edge defined by the center point, and the direction of the orientation flat is associated with one of the crystal orientation <1-100> and <11-20>.
25 Claim 7. The gallium nitride-based epitaxial wafer according to claim 1, wherein the gallium nitride wafer includes an edge 33 FP₀ 9-0277- OO US-SE of a substantial circle, the center point of the primary surface is at a center of the substantial circle, the gallium nitride wafer includes a marker, and the marker represents one of crystal orientation <1-100> and <11-20>.
5 Claim 8. The gallium nitride-based epitaxial wafer according to claim 1, wherein a difference between a maximum value and a minimum value of the off-angle on the line passing through the center of the primary surface of the gallium nitride substrate is less than or equal to 0.7 degree.
10 Claim 9. A method of fabricating an epitaxial wafer for a nitride light-emitting device, comprising the steps of: growing a first gallium nitride-based semiconductor film on a primary surface of each of a plurality of gallium nitride substrates, the gallium nitride substrates being located on a susceptor of an 15. organometallic vapor phase epitaxy reactor; growing an active layer on the first gallium nitride-based semiconductor film in the organometallic vapor phase epitaxy reactor while supplying raw material gas, the active layer having a quantum well structure; and 20 growing a second gallium nitride-based semiconductor film on the active layer in the organometallic vapor phase epitaxy reactor, one of the first gallium nitride-based semiconductor film and the second gallium nitride-based semiconductor film being doped with n-type dopant, another of the first gallium nitride-based semiconductor 25 film and the second gallium nitride-based semiconductor film being doped with p-type dopant, the active layer including a well layer of a 34 FP₀ 9-0277- OO US-SE gallium nitride-based semiconductor, the gallium nitride-based semiconductor containing indium as a Group III element, a normal line of the primary surface and a C-axis of each gallium nitride substrate forming an off angle with each other, the off angle being distributed 5 over the primary surface, and the off angle monotonically varying along a line, the line extending from one point to another point through a center point of the primary surface of the gallium nitride substrate, the one point and the another point being on an edge of the primary surface, the off angle at the one point on the edge being larger than that at the 10 another point of the primary surface, the well layer being grown with rotation of the susceptor, the rotation of the susceptor and flow of raw material gas along a flow axis from upstream to downstream of the raw material gas causing a distribution of a growth rate of the well layer, and the distribution of the growth rate having a large growth rate at the one 15 point, and the distribution of the growth rate having a small growth rate at the another point.
The method according to claim 9, wherein the thickness is defined as an average in each of the n points, and the average is defined as S/L, where symbol "L" represents a predetermined length in a cross sectional image of the well layer and the predetermined length is defined in a direction perpendicular to an axis extending from the gallium nitride substrate to the active layer, and symbol " S" represents a planer dimension of the well layer defined in the predetermined length "L" in the cross sectional image.
25 Claim 11. The method according to claim 9, wherein an off angle at a first point on the primary surface is smaller than an off angle 35 FP₀ 9-0277- OO US-SE at a second point on the primary surface, a thickness of the well layer at the first point on the primary surface is smaller than a thickness of the well layer at the second point on the primary surface, and the first and second points are located in separate nitride light-emitting devices.
5 Claim 12. The method according to claim 9, wherein the raw material gas for forming the active layer flows in a direction of traverse from one end to an opposite end of the primary surface of the susceptor in the organometallic vapor phase epitaxy reactor.
The method according to claim 9, wherein the 10 raw material gas to form the active layer is flown in a direction of an axis intersecting the primary surface of the susceptor.
The method according to claim 9, wherein the susceptor includes a plurality of wafer guides for positioning gallium nitride substrates and the wafer guides are arranged on a circumference defined on the primary surface of the susceptor, and the line of each gallium nitride substrate is oriented in a direction intersecting a tangent line of the circumference on the primary surface of the susceptor.
The method according to claim 9, further comprising the step of loading the gallium nitride substrates on the 20 susceptor.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based epitaxial wafer for nitride light-emitting device
Materials described outside the worked examples.
gallium nitride substrate
GaN
gallium nitride-based semiconductor film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
off-angle difference (max minus min) on line through center of GaN substrate primary surface | ≤ 0.7 degree | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,018,029Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based epitaxial wafer for a nitride light-emitting device, comprising: a gallium nitride substrate having a primary surface; 5 at least one gallium nitride-based semiconductor film provided on the primary surface of the gallium nitride substrate; and, an active layer provided on the gallium nitride-based semiconductor film, the active layer having a quantum well structure; the active layer including a well layer of a gallium nitride-based 10 semiconductor, the gallium nitride-based semiconductor containing indium as a Group III element, a normal line of the primary surface and a C-axis of the gallium nitride substrate forming an off angle with each other, the off angle being distributed on the primary surface, the off angle monotonically increasing on a line, the line extending from one 15 point to another point through a center point of the primary surface of the gallium nitride substrate, the one point and the another point being on an edge of the primary surface, indium contents of the well layer defined at n points (n: integer) on the line monotonically decreasing in a direction from the one point to the another point, and the thickness 20 values of the well layer defined at the n points monotonically increasing in the direction.
The gallium nitride-based epitaxial wafer according to claim 1, wherein the primary surface has a number of areas defined on the line for an arrangement of nitride light-emitting devices, 25 and each of the areas includes at least one of the n points.
The gallium nitride-based epitaxial wafer 32 FP₀ 9-0277- OO US-SE according to claim 1, wherein the thickness is defined as an average at each of the n points, and the average is defined as S/L, where symbol "L" represents a predetermined length in a cross sectional image of the well layer and the predetermined length is defined in the cross sectional 5 image in a direction perpendicular to an axis extending from the gallium nitride substrate to the active layer, and symbol "S" represents a planer dimension of the well layer defi n ed in the predetermined length "L" in the cross sectional image.
The gallium nitride-based epitaxial wafer 10 according to claim 1, wherein an off angle at a first point on the primary surface is smaller than an off angle at a second point on the primary surface, a thickness of the well layer at the first point on the primary surface is smaller than a thickness of the well layer at the second point on the primary surface, and the first and second points are located in the 15 areas for separate nitride light-emitting devices.
The gallium nitride-based epitaxial wafer according to claim 1, wherein the line is defined such that the primary surface is perpendicular to a reference plane defined by the line and one of crystal axis <1-100> and <11-20>.
20 Claim 6. The gallium nitride-based epitaxial wafer according to of claim 1, wherein the gallium nitride wafer includes an orientation flat and a substantially circular edge defined by the center point, and the direction of the orientation flat is associated with one of the crystal orientation <1-100> and <11-20>.
25 Claim 7. The gallium nitride-based epitaxial wafer according to claim 1, wherein the gallium nitride wafer includes an edge 33 FP₀ 9-0277- OO US-SE of a substantial circle, the center point of the primary surface is at a center of the substantial circle, the gallium nitride wafer includes a marker, and the marker represents one of crystal orientation <1-100> and <11-20>.
5 Claim 8. The gallium nitride-based epitaxial wafer according to claim 1, wherein a difference between a maximum value and a minimum value of the off-angle on the line passing through the center of the primary surface of the gallium nitride substrate is less than or equal to 0.7 degree.
10 Claim 9. A method of fabricating an epitaxial wafer for a nitride light-emitting device, comprising the steps of: growing a first gallium nitride-based semiconductor film on a primary surface of each of a plurality of gallium nitride substrates, the gallium nitride substrates being located on a susceptor of an 15. organometallic vapor phase epitaxy reactor; growing an active layer on the first gallium nitride-based semiconductor film in the organometallic vapor phase epitaxy reactor while supplying raw material gas, the active layer having a quantum well structure; and 20 growing a second gallium nitride-based semiconductor film on the active layer in the organometallic vapor phase epitaxy reactor, one of the first gallium nitride-based semiconductor film and the second gallium nitride-based semiconductor film being doped with n-type dopant, another of the first gallium nitride-based semiconductor 25 film and the second gallium nitride-based semiconductor film being doped with p-type dopant, the active layer including a well layer of a 34 FP₀ 9-0277- OO US-SE gallium nitride-based semiconductor, the gallium nitride-based semiconductor containing indium as a Group III element, a normal line of the primary surface and a C-axis of each gallium nitride substrate forming an off angle with each other, the off angle being distributed 5 over the primary surface, and the off angle monotonically varying along a line, the line extending from one point to another point through a center point of the primary surface of the gallium nitride substrate, the one point and the another point being on an edge of the primary surface, the off angle at the one point on the edge being larger than that at the 10 another point of the primary surface, the well layer being grown with rotation of the susceptor, the rotation of the susceptor and flow of raw material gas along a flow axis from upstream to downstream of the raw material gas causing a distribution of a growth rate of the well layer, and the distribution of the growth rate having a large growth rate at the one 15 point, and the distribution of the growth rate having a small growth rate at the another point.
The method according to claim 9, wherein the thickness is defined as an average in each of the n points, and the average is defined as S/L, where symbol "L" represents a predetermined length in a cross sectional image of the well layer and the predetermined length is defined in a direction perpendicular to an axis extending from the gallium nitride substrate to the active layer, and symbol " S" represents a planer dimension of the well layer defined in the predetermined length "L" in the cross sectional image.
25 Claim 11. The method according to claim 9, wherein an off angle at a first point on the primary surface is smaller than an off angle 35 FP₀ 9-0277- OO US-SE at a second point on the primary surface, a thickness of the well layer at the first point on the primary surface is smaller than a thickness of the well layer at the second point on the primary surface, and the first and second points are located in separate nitride light-emitting devices.
5 Claim 12. The method according to claim 9, wherein the raw material gas for forming the active layer flows in a direction of traverse from one end to an opposite end of the primary surface of the susceptor in the organometallic vapor phase epitaxy reactor.
The method according to claim 9, wherein the 10 raw material gas to form the active layer is flown in a direction of an axis intersecting the primary surface of the susceptor.
The method according to claim 9, wherein the susceptor includes a plurality of wafer guides for positioning gallium nitride substrates and the wafer guides are arranged on a circumference defined on the primary surface of the susceptor, and the line of each gallium nitride substrate is oriented in a direction intersecting a tangent line of the circumference on the primary surface of the susceptor.
The method according to claim 9, further comprising the step of loading the gallium nitride substrates on the 20 susceptor.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based epitaxial wafer for nitride light-emitting device
Materials described outside the worked examples.
gallium nitride substrate
GaN
gallium nitride-based semiconductor film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
off-angle difference (max minus min) on line through center of GaN substrate primary surface | ≤ 0.7 degree | GaN |
Related documents with shared materials, methods, properties, or citations.
indium-containing gallium nitride-based semiconductor well layer
InGaN
indium-containing gallium nitride-based semiconductor well layer
InGaN
indium-containing gallium nitride-based semiconductor well layer
InGaN
indium-containing gallium nitride-based semiconductor well layer
InGaN