Patent
Atlas literature
Patent
US 8,866,126Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The device of claim 1, further comprising: a non-polar or semi-polar surface of a I ll -nitride substrate; and the at least partially relaxed I II -nitride layer on or above the non-polar or semipolar surface of the substrate.
The device of claim 2, wherein the substrate is a Gallium Nitride (GaN) substrate.
The device of claim 1, wherein the active layer is free of dislocations.
The device of claim 1, wherein the anisotropic strain comprises a different strain in different directions of the I ll -nitride active layer, the different directions including: a first direction that is parallel to an in-plane c-projection and a second direction perpendicular to the first direction.
The device of claim 5, wherein the at least partially relaxed I ll -nitride layer is relaxed along the first direction and is not relaxed along the second direction, and the surface of the substrate is a semipolar plane.
The device of claim 1, further comprising: -2- G&C 30794.31 8-US-C l the active layer comprising one or more quantum wells having a thickness greater than 3 nanometers and with an Indium composition and strain such that the active layer emits light with a peak wavelength corresponding to green light.
The device of claim 1, further comprising: the active layer comprising one or more quantum wells having a thickness greater than 3 nanometers and with an Indium composition and strain such that the active layer emits light with an X₂ polarization.
The device of claim 8, wherein the device is a laser diode with a cavity bounded by cleaved in -plane facets.
The device of claim 1, wherein up to 50 0/of the strain in the active layer is relaxed.
The device of claim 1, wherein the at least partially relaxed I II -nitride layer is Indium Gallium Nitride JI nGaN).
The device of claim 1, wherein the at least partially relaxed I II -nitride layer has between 0/and 30 %/Indium composition and the active layer comprises one or more Indium Gallium Nitride (InGaN) quantum wells with between 10 %/and 30 %/Indium composition.
The device of claim 1, wherein the at least partially relaxed I II -nitride layer is Aluminum Gallium Nitride (AlGaN).
The device of claim 13, wherein the device emits light having a peak wavelength corresponding to ultraviolet light.
The device of claim 1, wherein the at least partially relaxed I II -nitride layer is a superlattice. -3- G&C 30794.31 8-US-C l
A method of fabricating a device, comprising: growing a semipolar or nonpolar I T -Nitride active layer with anisotropic strain on or above an at least partially relaxed I II -nitride layer.
(ORIGINA L The method of claim 16, further comprising controlling the strain anisotropy in order to control one or more of the following: optical gain, bandstructure, luminescence polarization, optical matrix elements.
The method of claim 16, further comprising: growing the at least partially relaxed I II -nitride layer on or above a non-polar or semi-polar surface of a I II -nitride substrate.
Layer stacks claimed or described, ordered top of device to substrate.
III-Nitride optical device (LED or LD) with anisotropic strain active layer
laser diode with cleaved in-plane facets
Materials described outside the worked examples.
III-Nitride active layer
(Al,Ga,In)N
Gallium Nitride substrate
GaN
Indium Gallium Nitride quantum well
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 3 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,866,126Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The device of claim 1, further comprising: a non-polar or semi-polar surface of a I ll -nitride substrate; and the at least partially relaxed I II -nitride layer on or above the non-polar or semipolar surface of the substrate.
The device of claim 2, wherein the substrate is a Gallium Nitride (GaN) substrate.
The device of claim 1, wherein the active layer is free of dislocations.
The device of claim 1, wherein the anisotropic strain comprises a different strain in different directions of the I ll -nitride active layer, the different directions including: a first direction that is parallel to an in-plane c-projection and a second direction perpendicular to the first direction.
The device of claim 5, wherein the at least partially relaxed I ll -nitride layer is relaxed along the first direction and is not relaxed along the second direction, and the surface of the substrate is a semipolar plane.
The device of claim 1, further comprising: -2- G&C 30794.31 8-US-C l the active layer comprising one or more quantum wells having a thickness greater than 3 nanometers and with an Indium composition and strain such that the active layer emits light with a peak wavelength corresponding to green light.
The device of claim 1, further comprising: the active layer comprising one or more quantum wells having a thickness greater than 3 nanometers and with an Indium composition and strain such that the active layer emits light with an X₂ polarization.
The device of claim 8, wherein the device is a laser diode with a cavity bounded by cleaved in -plane facets.
The device of claim 1, wherein up to 50 0/of the strain in the active layer is relaxed.
The device of claim 1, wherein the at least partially relaxed I II -nitride layer is Indium Gallium Nitride JI nGaN).
The device of claim 1, wherein the at least partially relaxed I II -nitride layer has between 0/and 30 %/Indium composition and the active layer comprises one or more Indium Gallium Nitride (InGaN) quantum wells with between 10 %/and 30 %/Indium composition.
The device of claim 1, wherein the at least partially relaxed I II -nitride layer is Aluminum Gallium Nitride (AlGaN).
The device of claim 13, wherein the device emits light having a peak wavelength corresponding to ultraviolet light.
The device of claim 1, wherein the at least partially relaxed I II -nitride layer is a superlattice. -3- G&C 30794.31 8-US-C l
A method of fabricating a device, comprising: growing a semipolar or nonpolar I T -Nitride active layer with anisotropic strain on or above an at least partially relaxed I II -nitride layer.
(ORIGINA L The method of claim 16, further comprising controlling the strain anisotropy in order to control one or more of the following: optical gain, bandstructure, luminescence polarization, optical matrix elements.
The method of claim 16, further comprising: growing the at least partially relaxed I II -nitride layer on or above a non-polar or semi-polar surface of a I II -nitride substrate.
Layer stacks claimed or described, ordered top of device to substrate.
III-Nitride optical device (LED or LD) with anisotropic strain active layer
laser diode with cleaved in-plane facets
Materials described outside the worked examples.
III-Nitride active layer
(Al,Ga,In)N
Gallium Nitride substrate
GaN
Indium Gallium Nitride quantum well
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 3 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,866,126Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The device of claim 1, further comprising: a non-polar or semi-polar surface of a I ll -nitride substrate; and the at least partially relaxed I II -nitride layer on or above the non-polar or semipolar surface of the substrate.
The device of claim 2, wherein the substrate is a Gallium Nitride (GaN) substrate.
The device of claim 1, wherein the active layer is free of dislocations.
The device of claim 1, wherein the anisotropic strain comprises a different strain in different directions of the I ll -nitride active layer, the different directions including: a first direction that is parallel to an in-plane c-projection and a second direction perpendicular to the first direction.
The device of claim 5, wherein the at least partially relaxed I ll -nitride layer is relaxed along the first direction and is not relaxed along the second direction, and the surface of the substrate is a semipolar plane.
The device of claim 1, further comprising: -2- G&C 30794.31 8-US-C l the active layer comprising one or more quantum wells having a thickness greater than 3 nanometers and with an Indium composition and strain such that the active layer emits light with a peak wavelength corresponding to green light.
The device of claim 1, further comprising: the active layer comprising one or more quantum wells having a thickness greater than 3 nanometers and with an Indium composition and strain such that the active layer emits light with an X₂ polarization.
The device of claim 8, wherein the device is a laser diode with a cavity bounded by cleaved in -plane facets.
The device of claim 1, wherein up to 50 0/of the strain in the active layer is relaxed.
The device of claim 1, wherein the at least partially relaxed I II -nitride layer is Indium Gallium Nitride JI nGaN).
The device of claim 1, wherein the at least partially relaxed I II -nitride layer has between 0/and 30 %/Indium composition and the active layer comprises one or more Indium Gallium Nitride (InGaN) quantum wells with between 10 %/and 30 %/Indium composition.
The device of claim 1, wherein the at least partially relaxed I II -nitride layer is Aluminum Gallium Nitride (AlGaN).
The device of claim 13, wherein the device emits light having a peak wavelength corresponding to ultraviolet light.
The device of claim 1, wherein the at least partially relaxed I II -nitride layer is a superlattice. -3- G&C 30794.31 8-US-C l
A method of fabricating a device, comprising: growing a semipolar or nonpolar I T -Nitride active layer with anisotropic strain on or above an at least partially relaxed I II -nitride layer.
(ORIGINA L The method of claim 16, further comprising controlling the strain anisotropy in order to control one or more of the following: optical gain, bandstructure, luminescence polarization, optical matrix elements.
The method of claim 16, further comprising: growing the at least partially relaxed I II -nitride layer on or above a non-polar or semi-polar surface of a I II -nitride substrate.
Layer stacks claimed or described, ordered top of device to substrate.
III-Nitride optical device (LED or LD) with anisotropic strain active layer
laser diode with cleaved in-plane facets
Materials described outside the worked examples.
III-Nitride active layer
(Al,Ga,In)N
Gallium Nitride substrate
GaN
Indium Gallium Nitride quantum well
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 3 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,866,126Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The device of claim 1, further comprising: a non-polar or semi-polar surface of a I ll -nitride substrate; and the at least partially relaxed I II -nitride layer on or above the non-polar or semipolar surface of the substrate.
The device of claim 2, wherein the substrate is a Gallium Nitride (GaN) substrate.
The device of claim 1, wherein the active layer is free of dislocations.
The device of claim 1, wherein the anisotropic strain comprises a different strain in different directions of the I ll -nitride active layer, the different directions including: a first direction that is parallel to an in-plane c-projection and a second direction perpendicular to the first direction.
The device of claim 5, wherein the at least partially relaxed I ll -nitride layer is relaxed along the first direction and is not relaxed along the second direction, and the surface of the substrate is a semipolar plane.
The device of claim 1, further comprising: -2- G&C 30794.31 8-US-C l the active layer comprising one or more quantum wells having a thickness greater than 3 nanometers and with an Indium composition and strain such that the active layer emits light with a peak wavelength corresponding to green light.
The device of claim 1, further comprising: the active layer comprising one or more quantum wells having a thickness greater than 3 nanometers and with an Indium composition and strain such that the active layer emits light with an X₂ polarization.
The device of claim 8, wherein the device is a laser diode with a cavity bounded by cleaved in -plane facets.
The device of claim 1, wherein up to 50 0/of the strain in the active layer is relaxed.
The device of claim 1, wherein the at least partially relaxed I II -nitride layer is Indium Gallium Nitride JI nGaN).
The device of claim 1, wherein the at least partially relaxed I II -nitride layer has between 0/and 30 %/Indium composition and the active layer comprises one or more Indium Gallium Nitride (InGaN) quantum wells with between 10 %/and 30 %/Indium composition.
The device of claim 1, wherein the at least partially relaxed I II -nitride layer is Aluminum Gallium Nitride (AlGaN).
The device of claim 13, wherein the device emits light having a peak wavelength corresponding to ultraviolet light.
The device of claim 1, wherein the at least partially relaxed I II -nitride layer is a superlattice. -3- G&C 30794.31 8-US-C l
A method of fabricating a device, comprising: growing a semipolar or nonpolar I T -Nitride active layer with anisotropic strain on or above an at least partially relaxed I II -nitride layer.
(ORIGINA L The method of claim 16, further comprising controlling the strain anisotropy in order to control one or more of the following: optical gain, bandstructure, luminescence polarization, optical matrix elements.
The method of claim 16, further comprising: growing the at least partially relaxed I II -nitride layer on or above a non-polar or semi-polar surface of a I II -nitride substrate.
Layer stacks claimed or described, ordered top of device to substrate.
III-Nitride optical device (LED or LD) with anisotropic strain active layer
laser diode with cleaved in-plane facets
Materials described outside the worked examples.
III-Nitride active layer
(Al,Ga,In)N
Gallium Nitride substrate
GaN
Indium Gallium Nitride quantum well
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 3 nm | — |
Related documents with shared materials, methods, properties, or citations.
Aluminum Gallium Nitride underlayer
AlGaN
InAlGaN underlayer
InAlGaN
Aluminum Gallium Nitride underlayer
AlGaN
InAlGaN underlayer
InAlGaN
Aluminum Gallium Nitride underlayer
AlGaN
InAlGaN underlayer
InAlGaN
Aluminum Gallium Nitride underlayer
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InAlGaN underlayer
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