Patent
US 8,189,639GAN-BASED LASER DIODES WITH MISFIT DISLOCATIONS DISPLACED FROM THE ACTIVE REGION
Rajaram Bhat
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based edge emitting laser comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer, wherein: the GaN substrate is characterized by a threading dislocation density on the order of approximately 1x1 06/cm2; the active region is interposed between and extends substantially parallel to the N-side waveguiding layer and the P-side waveguiding layer; the N-type cladding layer is interposed between the N-side waveguiding layer and the GaN substrate; the P-type cladding layer is formed over the P-side waveguiding layer; the strain-thickness product of the N-side waveguiding layer exceeds its strain relaxation critical value; the cumulative strain-thickness product of the active region calculated for growth on a relaxed N-side waveguiding layer is less than its strain relaxation critical value; an N-side interface between the N-type cladding layer and the N-side waveguiding layer comprises a set of N-side misfit dislocations; and a P-side interface between the P-type cladding layer and the P-side waveguiding layer comprises a set of P-side misfit dislocations.
A GaN edge emitting laser as claimed in claim 1 wherein the GaN substrate defines a 2021 crystal growth plane and a glide plane and the strain relaxation is mono-directional along the glide plane of the GaN substrate.
A GaN edge emitting laser as claimed in claim 1 wherein the GaN substrate defines a semipolar crystal growth plane and a glide plane and the strain relaxation is mono-directional along the glide plane of the GaN substrate.
A GaN edge emitting laser as claimed in claim 1 wherein the threading dislocation density of the GaN substrate is sufficient to catalyze formation of the misfit dislocations at the interface between the N-type cladding layer and the N-side waveguiding layer.
Docket No.-SP₁ 0 -166 5. A GaN edge emitting laser as claimed in claim 1 wherein the GaN substrate is characterized by a threading dislocation density less than approximately 1 x106/cm 2.
A GaN edge emitting laser as claimed in claim 1 wherein the N-type cladding layer and the P-type cladding layer comprise a bulk crystal of GaN, AlGaN, or AlGa I nN or a superlattice of AlGaN/AlGaN or AlGaN/GaN.
A GaN edge emitting laser as claimed in claim 1 wherein: the P-type cladding layer and the N-type cladding layer comprise Al; the strain-thickness product of the P-type cladding layer exceeds its strain relaxation critical value; and the strain-thickness product of the N-type cladding layer exceeds its strain relaxation critical value.
A GaN edge emitting laser as claimed in claim 1 wherein the N-side interface comprises an N-side interfacial layer.
A GaN edge emitting laser as claimed in claim 1 wherein the cumulative strain-thickness product of both the P-side waveguiding layer and the active region calculated for growth on a relaxed N-side waveguiding layer is less than its strain relaxation critical value.
A GaN edge emitting laser as claimed in claim 1 wherein: the active region comprises one or more current blocking layers; and the strain-thickness product of the blocking layer calculated for growth on a relaxed N-side waveguiding layer is less than its strain relaxation critical value.
A GaN edge emitting laser as claimed in claim 18 wherein: the P-side interfacial layer comprises a P-type GaN transition layer; and the P-type GaN transition layer is sufficiently thin to yield P-side misfit dislocations located on a side of the P-type GaN transition layer that interfaces with the P-type cladding layer.
A method of fabricating a GaN edge emitting laser comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N- type cladding layer, and a P-type cladding layer, wherein: the GaN substrate is characterized by a threading dislocation density on the order of approximately 1x106/cm2; the active region is interposed between and extends substantially parallel to the N-side waveguiding layer and the P-side waveguiding layer; the N-type cladding layer is interposed between the N-side waveguiding layer and the GaN substrate; the P-type cladding layer is formed over the P-side waveguiding layer; the active layer is fabricated such that the strain-thickness product of the active region is less than its strain relaxation critical value during fabrication; the N-side waveguiding layer is fabricated such that the strain-thickness product of the N-side waveguiding layer exceeds its strain relaxation critical value during fabrication; 12 Docket No.-SP₁ 0 -166 an N-side interface between the N-type cladding layer and the N-side waveguiding layer comprises a set of N-side misfit dislocations; and a P-side interface between the P-type cladding layer and the P-side waveguiding layer comprises a set of P-side misfit dislocations.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based edge emitting laser
Materials described outside the worked examples.
semi-polar GaN substrate
GaN
N-side waveguiding layer
P-side waveguiding layer
N-type cladding layer
P-type cladding layer
active region
GaInN quantum wells
GaInN
AlGaInN barrier layers
AlGaInN
AlGaN bulk crystal (cladding)
AlGaN
AlGaN/AlGaN superlattice (cladding)
AlGaN/AlGaN
AlGaN/GaN superlattice (cladding)
AlGaN/GaN
buffer layer
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Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based edge emitting laser comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer, wherein: the GaN substrate is characterized by a threading dislocation density on the order of approximately 1x1 06/cm2; the active region is interposed between and extends substantially parallel to the N-side waveguiding layer and the P-side waveguiding layer; the N-type cladding layer is interposed between the N-side waveguiding layer and the GaN substrate; the P-type cladding layer is formed over the P-side waveguiding layer; the strain-thickness product of the N-side waveguiding layer exceeds its strain relaxation critical value; the cumulative strain-thickness product of the active region calculated for growth on a relaxed N-side waveguiding layer is less than its strain relaxation critical value; an N-side interface between the N-type cladding layer and the N-side waveguiding layer comprises a set of N-side misfit dislocations; and a P-side interface between the P-type cladding layer and the P-side waveguiding layer comprises a set of P-side misfit dislocations.
A GaN edge emitting laser as claimed in claim 1 wherein the GaN substrate defines a 2021 crystal growth plane and a glide plane and the strain relaxation is mono-directional along the glide plane of the GaN substrate.
A GaN edge emitting laser as claimed in claim 1 wherein the GaN substrate defines a semipolar crystal growth plane and a glide plane and the strain relaxation is mono-directional along the glide plane of the GaN substrate.
A GaN edge emitting laser as claimed in claim 1 wherein the threading dislocation density of the GaN substrate is sufficient to catalyze formation of the misfit dislocations at the interface between the N-type cladding layer and the N-side waveguiding layer.
Docket No.-SP₁ 0 -166 5. A GaN edge emitting laser as claimed in claim 1 wherein the GaN substrate is characterized by a threading dislocation density less than approximately 1 x106/cm 2.
A GaN edge emitting laser as claimed in claim 1 wherein the N-type cladding layer and the P-type cladding layer comprise a bulk crystal of GaN, AlGaN, or AlGa I nN or a superlattice of AlGaN/AlGaN or AlGaN/GaN.
A GaN edge emitting laser as claimed in claim 1 wherein: the P-type cladding layer and the N-type cladding layer comprise Al; the strain-thickness product of the P-type cladding layer exceeds its strain relaxation critical value; and the strain-thickness product of the N-type cladding layer exceeds its strain relaxation critical value.
A GaN edge emitting laser as claimed in claim 1 wherein the N-side interface comprises an N-side interfacial layer.
A GaN edge emitting laser as claimed in claim 1 wherein the cumulative strain-thickness product of both the P-side waveguiding layer and the active region calculated for growth on a relaxed N-side waveguiding layer is less than its strain relaxation critical value.
A GaN edge emitting laser as claimed in claim 1 wherein: the active region comprises one or more current blocking layers; and the strain-thickness product of the blocking layer calculated for growth on a relaxed N-side waveguiding layer is less than its strain relaxation critical value.
A GaN edge emitting laser as claimed in claim 18 wherein: the P-side interfacial layer comprises a P-type GaN transition layer; and the P-type GaN transition layer is sufficiently thin to yield P-side misfit dislocations located on a side of the P-type GaN transition layer that interfaces with the P-type cladding layer.
A method of fabricating a GaN edge emitting laser comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N- type cladding layer, and a P-type cladding layer, wherein: the GaN substrate is characterized by a threading dislocation density on the order of approximately 1x106/cm2; the active region is interposed between and extends substantially parallel to the N-side waveguiding layer and the P-side waveguiding layer; the N-type cladding layer is interposed between the N-side waveguiding layer and the GaN substrate; the P-type cladding layer is formed over the P-side waveguiding layer; the active layer is fabricated such that the strain-thickness product of the active region is less than its strain relaxation critical value during fabrication; the N-side waveguiding layer is fabricated such that the strain-thickness product of the N-side waveguiding layer exceeds its strain relaxation critical value during fabrication; 12 Docket No.-SP₁ 0 -166 an N-side interface between the N-type cladding layer and the N-side waveguiding layer comprises a set of N-side misfit dislocations; and a P-side interface between the P-type cladding layer and the P-side waveguiding layer comprises a set of P-side misfit dislocations.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based edge emitting laser
Materials described outside the worked examples.
semi-polar GaN substrate
GaN
N-side waveguiding layer
P-side waveguiding layer
N-type cladding layer
P-type cladding layer
active region
GaInN quantum wells
GaInN
AlGaInN barrier layers
AlGaInN
AlGaN bulk crystal (cladding)
AlGaN
AlGaN/AlGaN superlattice (cladding)
AlGaN/AlGaN
AlGaN/GaN superlattice (cladding)
AlGaN/GaN
buffer layer
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Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based edge emitting laser comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer, wherein: the GaN substrate is characterized by a threading dislocation density on the order of approximately 1x1 06/cm2; the active region is interposed between and extends substantially parallel to the N-side waveguiding layer and the P-side waveguiding layer; the N-type cladding layer is interposed between the N-side waveguiding layer and the GaN substrate; the P-type cladding layer is formed over the P-side waveguiding layer; the strain-thickness product of the N-side waveguiding layer exceeds its strain relaxation critical value; the cumulative strain-thickness product of the active region calculated for growth on a relaxed N-side waveguiding layer is less than its strain relaxation critical value; an N-side interface between the N-type cladding layer and the N-side waveguiding layer comprises a set of N-side misfit dislocations; and a P-side interface between the P-type cladding layer and the P-side waveguiding layer comprises a set of P-side misfit dislocations.
A GaN edge emitting laser as claimed in claim 1 wherein the GaN substrate defines a 2021 crystal growth plane and a glide plane and the strain relaxation is mono-directional along the glide plane of the GaN substrate.
A GaN edge emitting laser as claimed in claim 1 wherein the GaN substrate defines a semipolar crystal growth plane and a glide plane and the strain relaxation is mono-directional along the glide plane of the GaN substrate.
A GaN edge emitting laser as claimed in claim 1 wherein the threading dislocation density of the GaN substrate is sufficient to catalyze formation of the misfit dislocations at the interface between the N-type cladding layer and the N-side waveguiding layer.
Docket No.-SP₁ 0 -166 5. A GaN edge emitting laser as claimed in claim 1 wherein the GaN substrate is characterized by a threading dislocation density less than approximately 1 x106/cm 2.
A GaN edge emitting laser as claimed in claim 1 wherein the N-type cladding layer and the P-type cladding layer comprise a bulk crystal of GaN, AlGaN, or AlGa I nN or a superlattice of AlGaN/AlGaN or AlGaN/GaN.
A GaN edge emitting laser as claimed in claim 1 wherein: the P-type cladding layer and the N-type cladding layer comprise Al; the strain-thickness product of the P-type cladding layer exceeds its strain relaxation critical value; and the strain-thickness product of the N-type cladding layer exceeds its strain relaxation critical value.
A GaN edge emitting laser as claimed in claim 1 wherein the N-side interface comprises an N-side interfacial layer.
A GaN edge emitting laser as claimed in claim 1 wherein the cumulative strain-thickness product of both the P-side waveguiding layer and the active region calculated for growth on a relaxed N-side waveguiding layer is less than its strain relaxation critical value.
A GaN edge emitting laser as claimed in claim 1 wherein: the active region comprises one or more current blocking layers; and the strain-thickness product of the blocking layer calculated for growth on a relaxed N-side waveguiding layer is less than its strain relaxation critical value.
A GaN edge emitting laser as claimed in claim 18 wherein: the P-side interfacial layer comprises a P-type GaN transition layer; and the P-type GaN transition layer is sufficiently thin to yield P-side misfit dislocations located on a side of the P-type GaN transition layer that interfaces with the P-type cladding layer.
A method of fabricating a GaN edge emitting laser comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N- type cladding layer, and a P-type cladding layer, wherein: the GaN substrate is characterized by a threading dislocation density on the order of approximately 1x106/cm2; the active region is interposed between and extends substantially parallel to the N-side waveguiding layer and the P-side waveguiding layer; the N-type cladding layer is interposed between the N-side waveguiding layer and the GaN substrate; the P-type cladding layer is formed over the P-side waveguiding layer; the active layer is fabricated such that the strain-thickness product of the active region is less than its strain relaxation critical value during fabrication; the N-side waveguiding layer is fabricated such that the strain-thickness product of the N-side waveguiding layer exceeds its strain relaxation critical value during fabrication; 12 Docket No.-SP₁ 0 -166 an N-side interface between the N-type cladding layer and the N-side waveguiding layer comprises a set of N-side misfit dislocations; and a P-side interface between the P-type cladding layer and the P-side waveguiding layer comprises a set of P-side misfit dislocations.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based edge emitting laser
Materials described outside the worked examples.
semi-polar GaN substrate
GaN
N-side waveguiding layer
P-side waveguiding layer
N-type cladding layer
P-type cladding layer
active region
GaInN quantum wells
GaInN
AlGaInN barrier layers
AlGaInN
AlGaN bulk crystal (cladding)
AlGaN
AlGaN/AlGaN superlattice (cladding)
AlGaN/AlGaN
AlGaN/GaN superlattice (cladding)
AlGaN/GaN
buffer layer
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Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based edge emitting laser comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer, wherein: the GaN substrate is characterized by a threading dislocation density on the order of approximately 1x1 06/cm2; the active region is interposed between and extends substantially parallel to the N-side waveguiding layer and the P-side waveguiding layer; the N-type cladding layer is interposed between the N-side waveguiding layer and the GaN substrate; the P-type cladding layer is formed over the P-side waveguiding layer; the strain-thickness product of the N-side waveguiding layer exceeds its strain relaxation critical value; the cumulative strain-thickness product of the active region calculated for growth on a relaxed N-side waveguiding layer is less than its strain relaxation critical value; an N-side interface between the N-type cladding layer and the N-side waveguiding layer comprises a set of N-side misfit dislocations; and a P-side interface between the P-type cladding layer and the P-side waveguiding layer comprises a set of P-side misfit dislocations.
A GaN edge emitting laser as claimed in claim 1 wherein the GaN substrate defines a 2021 crystal growth plane and a glide plane and the strain relaxation is mono-directional along the glide plane of the GaN substrate.
A GaN edge emitting laser as claimed in claim 1 wherein the GaN substrate defines a semipolar crystal growth plane and a glide plane and the strain relaxation is mono-directional along the glide plane of the GaN substrate.
A GaN edge emitting laser as claimed in claim 1 wherein the threading dislocation density of the GaN substrate is sufficient to catalyze formation of the misfit dislocations at the interface between the N-type cladding layer and the N-side waveguiding layer.
Docket No.-SP₁ 0 -166 5. A GaN edge emitting laser as claimed in claim 1 wherein the GaN substrate is characterized by a threading dislocation density less than approximately 1 x106/cm 2.
A GaN edge emitting laser as claimed in claim 1 wherein the N-type cladding layer and the P-type cladding layer comprise a bulk crystal of GaN, AlGaN, or AlGa I nN or a superlattice of AlGaN/AlGaN or AlGaN/GaN.
A GaN edge emitting laser as claimed in claim 1 wherein: the P-type cladding layer and the N-type cladding layer comprise Al; the strain-thickness product of the P-type cladding layer exceeds its strain relaxation critical value; and the strain-thickness product of the N-type cladding layer exceeds its strain relaxation critical value.
A GaN edge emitting laser as claimed in claim 1 wherein the N-side interface comprises an N-side interfacial layer.
A GaN edge emitting laser as claimed in claim 1 wherein the cumulative strain-thickness product of both the P-side waveguiding layer and the active region calculated for growth on a relaxed N-side waveguiding layer is less than its strain relaxation critical value.
A GaN edge emitting laser as claimed in claim 1 wherein: the active region comprises one or more current blocking layers; and the strain-thickness product of the blocking layer calculated for growth on a relaxed N-side waveguiding layer is less than its strain relaxation critical value.
A GaN edge emitting laser as claimed in claim 18 wherein: the P-side interfacial layer comprises a P-type GaN transition layer; and the P-type GaN transition layer is sufficiently thin to yield P-side misfit dislocations located on a side of the P-type GaN transition layer that interfaces with the P-type cladding layer.
A method of fabricating a GaN edge emitting laser comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N- type cladding layer, and a P-type cladding layer, wherein: the GaN substrate is characterized by a threading dislocation density on the order of approximately 1x106/cm2; the active region is interposed between and extends substantially parallel to the N-side waveguiding layer and the P-side waveguiding layer; the N-type cladding layer is interposed between the N-side waveguiding layer and the GaN substrate; the P-type cladding layer is formed over the P-side waveguiding layer; the active layer is fabricated such that the strain-thickness product of the active region is less than its strain relaxation critical value during fabrication; the N-side waveguiding layer is fabricated such that the strain-thickness product of the N-side waveguiding layer exceeds its strain relaxation critical value during fabrication; 12 Docket No.-SP₁ 0 -166 an N-side interface between the N-type cladding layer and the N-side waveguiding layer comprises a set of N-side misfit dislocations; and a P-side interface between the P-type cladding layer and the P-side waveguiding layer comprises a set of P-side misfit dislocations.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based edge emitting laser
Materials described outside the worked examples.
semi-polar GaN substrate
GaN
N-side waveguiding layer
P-side waveguiding layer
N-type cladding layer
P-type cladding layer
active region
GaInN quantum wells
GaInN
AlGaInN barrier layers
AlGaInN
AlGaN bulk crystal (cladding)
AlGaN
AlGaN/AlGaN superlattice (cladding)
AlGaN/AlGaN
AlGaN/GaN superlattice (cladding)
AlGaN/GaN
buffer layer
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