Patent
US 8,422,525OPTICAL DEVICE STRUCTURE USING MISCUT GaN SUBSTRATES FOR LASER APPLICATIONS
James W. Raring, Daniel F. Feezell, Nicholas J. Pfister
SORAA, INC.·US
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US 8,422,525Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a simplified perspective view of a laser device fabricated on a semipolar substrate according to an embodiment of the present invention.
Figure 2 is a detailed cross-sectional view of a laser device fabricated on a semipolar 15 substrate according to an embodiment of the present invention.
Figure 3 is a cross-sectional view photograph of an m -direction cleaved facet for a laser device according to an embodiment of the present invention.
Figure 4 is a top-view diagram of a laser device according to an embodiment of the present invention. 20
Figures 5 and 6 are plots of semipolar (11-22) polarization ratio measurements for optical devices according to embodiments of the present invention.
Figure 7 is a plot of polarization degree against angle for an optical device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
45678910111213141516171819202122232425262728. App l. No. 12/749,466 PATENT Am dt. dated Reply to Office Action of Amendments to the Claims: This listing of claims will replace all prior versions, and listings of claims in the application: Listing of Claims: Claims 1-28.
Layer stacks claimed or described, ordered top of device to substrate.
semipolar GaN-based laser diode with cleaved m-face facets
Materials described outside the worked examples.
gallium nitride (semipolar, miscut)
GaN
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
emission wavelength range (abstract) | 490–580 nm | — |
emission wavelength range (embodiment) | 500–580 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,422,525Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a simplified perspective view of a laser device fabricated on a semipolar substrate according to an embodiment of the present invention.
Figure 2 is a detailed cross-sectional view of a laser device fabricated on a semipolar 15 substrate according to an embodiment of the present invention.
Figure 3 is a cross-sectional view photograph of an m -direction cleaved facet for a laser device according to an embodiment of the present invention.
Figure 4 is a top-view diagram of a laser device according to an embodiment of the present invention. 20
Figures 5 and 6 are plots of semipolar (11-22) polarization ratio measurements for optical devices according to embodiments of the present invention.
Figure 7 is a plot of polarization degree against angle for an optical device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
45678910111213141516171819202122232425262728. App l. No. 12/749,466 PATENT Am dt. dated Reply to Office Action of Amendments to the Claims: This listing of claims will replace all prior versions, and listings of claims in the application: Listing of Claims: Claims 1-28.
Layer stacks claimed or described, ordered top of device to substrate.
semipolar GaN-based laser diode with cleaved m-face facets
Materials described outside the worked examples.
gallium nitride (semipolar, miscut)
GaN
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
emission wavelength range (abstract) | 490–580 nm | — |
emission wavelength range (embodiment) | 500–580 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,422,525Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a simplified perspective view of a laser device fabricated on a semipolar substrate according to an embodiment of the present invention.
Figure 2 is a detailed cross-sectional view of a laser device fabricated on a semipolar 15 substrate according to an embodiment of the present invention.
Figure 3 is a cross-sectional view photograph of an m -direction cleaved facet for a laser device according to an embodiment of the present invention.
Figure 4 is a top-view diagram of a laser device according to an embodiment of the present invention. 20
Figures 5 and 6 are plots of semipolar (11-22) polarization ratio measurements for optical devices according to embodiments of the present invention.
Figure 7 is a plot of polarization degree against angle for an optical device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
45678910111213141516171819202122232425262728. App l. No. 12/749,466 PATENT Am dt. dated Reply to Office Action of Amendments to the Claims: This listing of claims will replace all prior versions, and listings of claims in the application: Listing of Claims: Claims 1-28.
Layer stacks claimed or described, ordered top of device to substrate.
semipolar GaN-based laser diode with cleaved m-face facets
Materials described outside the worked examples.
gallium nitride (semipolar, miscut)
GaN
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
emission wavelength range (abstract) | 490–580 nm | — |
emission wavelength range (embodiment) | 500–580 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,422,525Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a simplified perspective view of a laser device fabricated on a semipolar substrate according to an embodiment of the present invention.
Figure 2 is a detailed cross-sectional view of a laser device fabricated on a semipolar 15 substrate according to an embodiment of the present invention.
Figure 3 is a cross-sectional view photograph of an m -direction cleaved facet for a laser device according to an embodiment of the present invention.
Figure 4 is a top-view diagram of a laser device according to an embodiment of the present invention. 20
Figures 5 and 6 are plots of semipolar (11-22) polarization ratio measurements for optical devices according to embodiments of the present invention.
Figure 7 is a plot of polarization degree against angle for an optical device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
45678910111213141516171819202122232425262728. App l. No. 12/749,466 PATENT Am dt. dated Reply to Office Action of Amendments to the Claims: This listing of claims will replace all prior versions, and listings of claims in the application: Listing of Claims: Claims 1-28.
Layer stacks claimed or described, ordered top of device to substrate.
semipolar GaN-based laser diode with cleaved m-face facets
Materials described outside the worked examples.
gallium nitride (semipolar, miscut)
GaN
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
emission wavelength range (abstract) | 490–580 nm | — |
emission wavelength range (embodiment) | 500–580 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
AlGaN
AlInGaN
| 1–40 nm |
| — |
Thickness | 0.2–5 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 50–3000 µm | — |
Thickness | 10–50 µm | — |
Thickness | 10–50 Å | — |
Thickness | 10–100 nm | — |
Thickness | 500–520 nm | — |
Thickness | 490–500 nm | — |
Thickness | 1–50 nm | — |
Thickness | 480–510 nm | — |
Pressure | ≤ 1 pa | — |
Thickness | 0.5–50 µm | — |
Thickness | 5 -2 cm | — |
Thickness | ≥ 490 nm | — |
AlGaN
AlInGaN
| 1–40 nm |
| — |
Thickness | 0.2–5 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 50–3000 µm | — |
Thickness | 10–50 µm | — |
Thickness | 10–50 Å | — |
Thickness | 10–100 nm | — |
Thickness | 500–520 nm | — |
Thickness | 490–500 nm | — |
Thickness | 1–50 nm | — |
Thickness | 480–510 nm | — |
Pressure | ≤ 1 pa | — |
Thickness | 0.5–50 µm | — |
Thickness | 5 -2 cm | — |
Thickness | ≥ 490 nm | — |
AlGaN
AlInGaN
| 1–40 nm |
| — |
Thickness | 0.2–5 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 50–3000 µm | — |
Thickness | 10–50 µm | — |
Thickness | 10–50 Å | — |
Thickness | 10–100 nm | — |
Thickness | 500–520 nm | — |
Thickness | 490–500 nm | — |
Thickness | 1–50 nm | — |
Thickness | 480–510 nm | — |
Pressure | ≤ 1 pa | — |
Thickness | 0.5–50 µm | — |
Thickness | 5 -2 cm | — |
Thickness | ≥ 490 nm | — |
AlGaN
AlInGaN
| 1–40 nm |
| — |
Thickness | 0.2–5 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 50–3000 µm | — |
Thickness | 10–50 µm | — |
Thickness | 10–50 Å | — |
Thickness | 10–100 nm | — |
Thickness | 500–520 nm | — |
Thickness | 490–500 nm | — |
Thickness | 1–50 nm | — |
Thickness | 480–510 nm | — |
Pressure | ≤ 1 pa | — |
Thickness | 0.5–50 µm | — |
Thickness | 5 -2 cm | — |
Thickness | ≥ 490 nm | — |