Patent
US 9,136,116METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS
David P. Bour, Thomas R. Prunty, Linda Romano, Andrew P. Edwards et al.
EPOWERSOFT, INC.·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,136,116Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, a recessed region 103 is etched in the substrate 101 to form a trench in the illustrated embodiment. The shape of the recessed region 103 is a …
FIG. 2C is a simplified plot illustrating energy bandgap as a function of lateral position for the p-n junction illustrated in
FIGS. 3A-3D are simplified schematic diagrams illustrating a process flow for formation of a lateral p-n junction displaced from a regrowth interface according …
FIGS. 4A-4C are simplified schematic diagrams illustrating a process flow for formation of a diffused lateral p-n junction according to an embodiment of the …
FIG. 5E is a simplified flowchart illustrating a method of fabricating a p-n junction using an in-situ etch and regrowth process according to an embodiment of …
FIG. 6A is a simplified schematic diagram illustrating a lateral p-n junction displaced from a regrowth interface with a T -shaped regrowth profile according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A method of forming a lateral p-n junction in III -nitride materials, the method comprising: providing an n-type I II -nitride substrate; forming an n-type epitaxial layer coupled to the n-type I II -nitride substrate; forming an etch/regr owth mask coupled to a surface of the n-type I II-nitride substrate; removing at least a portion of the n-type epitaxial layer to define a recessed region; diff u sing an acceptor into the recessed region to form a doped region extending from the recessed region into the substrate, wherein the doped region of the substrate and the substrate adjacent to the doped region collectively form a p-n junction spaced apart from the recessed region and extending along an entire depth of the recessed region; loading the substrate into an MOC V D reactor; removing a portion of the doped region using an in-situ etch process to undercut the etch/regr owth mask; and regrowing a p-type epitaxial layer [[from]] coupled to the doped region, wherein the p r egie n surface of the n-type I II -nitride substrate is free from the regrown p-type epitaxial layer.
The method of claim 10 wherein: a regrowth interface is defined by the p-type epitaxial layer and the recessed region; and the p-n junction is spaced apart from the regrowth interface. Page 2 of 9 SVG 13198666.04-21-2015.I₈RVHA₈₉PXXIFW3.CLM14700623.1.300.159.2249.292.svg 0.443 6.497 Drawing Black and white
The method of claim 10 wherein the p-n junction is spaced has a depth into the substrate between about 1 nm and about 1 m.
The method of claim 10 wherein the acceptor comprises zinc.
The method of claim 10 wherein the acceptor comprises at least one of magnesium, beryllium, or calcium.
The method of claim 10 wherein the n-type I II -nitride substrate comprises a GaN substrate doped with at least one of silicon or oxygen. 17-23.
The method of claim 10 wherein the p-n junction extends in a direction substantially orthogonal to a growth direction of the I II -nitride material having the second conductivity type. Page 4 of 9
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A method of forming a lateral p-n junction, the method comprising: providing a substrate comprising a GaN-based material characterized by a first conductivity type; forming [[a]] an etch/regrowth masking layer on a surface of the substrate; removing a first portion of the substrate using an ex-situ etch process, whereby an etched surface defined by the etch/regrowth masking la yer is exposed; loading the substrate with the etched surface into an MOC V D reactor; removing an additional portion of the substrate from the etched surface using an in-situ etch process in the MOC V D reactor to undercut the etch/regrowth mask, wherein removing the first and additional portions forms a recessed region in the substrate; and the recessed Pegion and extending along an entie depth of the recessed Page 3 of 9 SVG 13198666.04-21-2015.I₈RVHA₈₉PXXIFW3.CLM14700624.1.300.159.2249.292.svg 0.443 6.497 Graph Black and white regrowing a GaN-based material [[of the]] characterized by a second conductivity type from the doped, aloghe irtife-dept of thef±° eeedegi in at least a portion of the first portion and the additional portion, wherein the surface of the substrate is free from the regrown GaN-based materials.
The method of claim 24, wherein the substrate comprises a GaN substrate.
The method of claim 24, wherein the first conductivity type comprises an n-type.
The method of claim 24, further comprising: forming an electrode on a portion of the substrate to provide an electrical connection to the GaN-based material of the first conductivity type; and forming a second electrode on a portion of the epitaxial layer of the second conductivity type.
The method of claim 24, wherein a width of the first portion is less than a width of the additional portion
The method of claim 24 further comprising, after regrowing the GaN-based material, removing the etch/regrowth masking layer.
Layer stacks claimed or described, ordered top of device to substrate.
lateral p-n junction device in III-nitride (claim 10)
lateral p-n junction device in GaN-based material (claim 24)
Materials described outside the worked examples.
n-type III-nitride substrate
n-type III-nitride epitaxial layer
p-type III-nitride epitaxial layer (regrown)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2C is a simplified plot illustrating energy bandgap as a function of lateral position for the p-n junction illustrated in
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,136,116Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, a recessed region 103 is etched in the substrate 101 to form a trench in the illustrated embodiment. The shape of the recessed region 103 is a …
FIG. 2C is a simplified plot illustrating energy bandgap as a function of lateral position for the p-n junction illustrated in
FIGS. 3A-3D are simplified schematic diagrams illustrating a process flow for formation of a lateral p-n junction displaced from a regrowth interface according …
FIGS. 4A-4C are simplified schematic diagrams illustrating a process flow for formation of a diffused lateral p-n junction according to an embodiment of the …
FIG. 5E is a simplified flowchart illustrating a method of fabricating a p-n junction using an in-situ etch and regrowth process according to an embodiment of …
FIG. 6A is a simplified schematic diagram illustrating a lateral p-n junction displaced from a regrowth interface with a T -shaped regrowth profile according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A method of forming a lateral p-n junction in III -nitride materials, the method comprising: providing an n-type I II -nitride substrate; forming an n-type epitaxial layer coupled to the n-type I II -nitride substrate; forming an etch/regr owth mask coupled to a surface of the n-type I II-nitride substrate; removing at least a portion of the n-type epitaxial layer to define a recessed region; diff u sing an acceptor into the recessed region to form a doped region extending from the recessed region into the substrate, wherein the doped region of the substrate and the substrate adjacent to the doped region collectively form a p-n junction spaced apart from the recessed region and extending along an entire depth of the recessed region; loading the substrate into an MOC V D reactor; removing a portion of the doped region using an in-situ etch process to undercut the etch/regr owth mask; and regrowing a p-type epitaxial layer [[from]] coupled to the doped region, wherein the p r egie n surface of the n-type I II -nitride substrate is free from the regrown p-type epitaxial layer.
The method of claim 10 wherein: a regrowth interface is defined by the p-type epitaxial layer and the recessed region; and the p-n junction is spaced apart from the regrowth interface. Page 2 of 9 SVG 13198666.04-21-2015.I₈RVHA₈₉PXXIFW3.CLM14700623.1.300.159.2249.292.svg 0.443 6.497 Drawing Black and white
The method of claim 10 wherein the p-n junction is spaced has a depth into the substrate between about 1 nm and about 1 m.
The method of claim 10 wherein the acceptor comprises zinc.
The method of claim 10 wherein the acceptor comprises at least one of magnesium, beryllium, or calcium.
The method of claim 10 wherein the n-type I II -nitride substrate comprises a GaN substrate doped with at least one of silicon or oxygen. 17-23.
The method of claim 10 wherein the p-n junction extends in a direction substantially orthogonal to a growth direction of the I II -nitride material having the second conductivity type. Page 4 of 9
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A method of forming a lateral p-n junction, the method comprising: providing a substrate comprising a GaN-based material characterized by a first conductivity type; forming [[a]] an etch/regrowth masking layer on a surface of the substrate; removing a first portion of the substrate using an ex-situ etch process, whereby an etched surface defined by the etch/regrowth masking la yer is exposed; loading the substrate with the etched surface into an MOC V D reactor; removing an additional portion of the substrate from the etched surface using an in-situ etch process in the MOC V D reactor to undercut the etch/regrowth mask, wherein removing the first and additional portions forms a recessed region in the substrate; and the recessed Pegion and extending along an entie depth of the recessed Page 3 of 9 SVG 13198666.04-21-2015.I₈RVHA₈₉PXXIFW3.CLM14700624.1.300.159.2249.292.svg 0.443 6.497 Graph Black and white regrowing a GaN-based material [[of the]] characterized by a second conductivity type from the doped, aloghe irtife-dept of thef±° eeedegi in at least a portion of the first portion and the additional portion, wherein the surface of the substrate is free from the regrown GaN-based materials.
The method of claim 24, wherein the substrate comprises a GaN substrate.
The method of claim 24, wherein the first conductivity type comprises an n-type.
The method of claim 24, further comprising: forming an electrode on a portion of the substrate to provide an electrical connection to the GaN-based material of the first conductivity type; and forming a second electrode on a portion of the epitaxial layer of the second conductivity type.
The method of claim 24, wherein a width of the first portion is less than a width of the additional portion
The method of claim 24 further comprising, after regrowing the GaN-based material, removing the etch/regrowth masking layer.
Layer stacks claimed or described, ordered top of device to substrate.
lateral p-n junction device in III-nitride (claim 10)
lateral p-n junction device in GaN-based material (claim 24)
Materials described outside the worked examples.
n-type III-nitride substrate
n-type III-nitride epitaxial layer
p-type III-nitride epitaxial layer (regrown)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2C is a simplified plot illustrating energy bandgap as a function of lateral position for the p-n junction illustrated in
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,136,116Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, a recessed region 103 is etched in the substrate 101 to form a trench in the illustrated embodiment. The shape of the recessed region 103 is a …
FIG. 2C is a simplified plot illustrating energy bandgap as a function of lateral position for the p-n junction illustrated in
FIGS. 3A-3D are simplified schematic diagrams illustrating a process flow for formation of a lateral p-n junction displaced from a regrowth interface according …
FIGS. 4A-4C are simplified schematic diagrams illustrating a process flow for formation of a diffused lateral p-n junction according to an embodiment of the …
FIG. 5E is a simplified flowchart illustrating a method of fabricating a p-n junction using an in-situ etch and regrowth process according to an embodiment of …
FIG. 6A is a simplified schematic diagram illustrating a lateral p-n junction displaced from a regrowth interface with a T -shaped regrowth profile according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
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A method of forming a lateral p-n junction in III -nitride materials, the method comprising: providing an n-type I II -nitride substrate; forming an n-type epitaxial layer coupled to the n-type I II -nitride substrate; forming an etch/regr owth mask coupled to a surface of the n-type I II-nitride substrate; removing at least a portion of the n-type epitaxial layer to define a recessed region; diff u sing an acceptor into the recessed region to form a doped region extending from the recessed region into the substrate, wherein the doped region of the substrate and the substrate adjacent to the doped region collectively form a p-n junction spaced apart from the recessed region and extending along an entire depth of the recessed region; loading the substrate into an MOC V D reactor; removing a portion of the doped region using an in-situ etch process to undercut the etch/regr owth mask; and regrowing a p-type epitaxial layer [[from]] coupled to the doped region, wherein the p r egie n surface of the n-type I II -nitride substrate is free from the regrown p-type epitaxial layer.
The method of claim 10 wherein: a regrowth interface is defined by the p-type epitaxial layer and the recessed region; and the p-n junction is spaced apart from the regrowth interface. Page 2 of 9 SVG 13198666.04-21-2015.I₈RVHA₈₉PXXIFW3.CLM14700623.1.300.159.2249.292.svg 0.443 6.497 Drawing Black and white
The method of claim 10 wherein the p-n junction is spaced has a depth into the substrate between about 1 nm and about 1 m.
The method of claim 10 wherein the acceptor comprises zinc.
The method of claim 10 wherein the acceptor comprises at least one of magnesium, beryllium, or calcium.
The method of claim 10 wherein the n-type I II -nitride substrate comprises a GaN substrate doped with at least one of silicon or oxygen. 17-23.
The method of claim 10 wherein the p-n junction extends in a direction substantially orthogonal to a growth direction of the I II -nitride material having the second conductivity type. Page 4 of 9
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A method of forming a lateral p-n junction, the method comprising: providing a substrate comprising a GaN-based material characterized by a first conductivity type; forming [[a]] an etch/regrowth masking layer on a surface of the substrate; removing a first portion of the substrate using an ex-situ etch process, whereby an etched surface defined by the etch/regrowth masking la yer is exposed; loading the substrate with the etched surface into an MOC V D reactor; removing an additional portion of the substrate from the etched surface using an in-situ etch process in the MOC V D reactor to undercut the etch/regrowth mask, wherein removing the first and additional portions forms a recessed region in the substrate; and the recessed Pegion and extending along an entie depth of the recessed Page 3 of 9 SVG 13198666.04-21-2015.I₈RVHA₈₉PXXIFW3.CLM14700624.1.300.159.2249.292.svg 0.443 6.497 Graph Black and white regrowing a GaN-based material [[of the]] characterized by a second conductivity type from the doped, aloghe irtife-dept of thef±° eeedegi in at least a portion of the first portion and the additional portion, wherein the surface of the substrate is free from the regrown GaN-based materials.
The method of claim 24, wherein the substrate comprises a GaN substrate.
The method of claim 24, wherein the first conductivity type comprises an n-type.
The method of claim 24, further comprising: forming an electrode on a portion of the substrate to provide an electrical connection to the GaN-based material of the first conductivity type; and forming a second electrode on a portion of the epitaxial layer of the second conductivity type.
The method of claim 24, wherein a width of the first portion is less than a width of the additional portion
The method of claim 24 further comprising, after regrowing the GaN-based material, removing the etch/regrowth masking layer.
Layer stacks claimed or described, ordered top of device to substrate.
lateral p-n junction device in III-nitride (claim 10)
lateral p-n junction device in GaN-based material (claim 24)
Materials described outside the worked examples.
n-type III-nitride substrate
n-type III-nitride epitaxial layer
p-type III-nitride epitaxial layer (regrown)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2C is a simplified plot illustrating energy bandgap as a function of lateral position for the p-n junction illustrated in
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,136,116Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, a recessed region 103 is etched in the substrate 101 to form a trench in the illustrated embodiment. The shape of the recessed region 103 is a …
FIG. 2C is a simplified plot illustrating energy bandgap as a function of lateral position for the p-n junction illustrated in
FIGS. 3A-3D are simplified schematic diagrams illustrating a process flow for formation of a lateral p-n junction displaced from a regrowth interface according …
FIGS. 4A-4C are simplified schematic diagrams illustrating a process flow for formation of a diffused lateral p-n junction according to an embodiment of the …
FIG. 5E is a simplified flowchart illustrating a method of fabricating a p-n junction using an in-situ etch and regrowth process according to an embodiment of …
FIG. 6A is a simplified schematic diagram illustrating a lateral p-n junction displaced from a regrowth interface with a T -shaped regrowth profile according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
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A method of forming a lateral p-n junction in III -nitride materials, the method comprising: providing an n-type I II -nitride substrate; forming an n-type epitaxial layer coupled to the n-type I II -nitride substrate; forming an etch/regr owth mask coupled to a surface of the n-type I II-nitride substrate; removing at least a portion of the n-type epitaxial layer to define a recessed region; diff u sing an acceptor into the recessed region to form a doped region extending from the recessed region into the substrate, wherein the doped region of the substrate and the substrate adjacent to the doped region collectively form a p-n junction spaced apart from the recessed region and extending along an entire depth of the recessed region; loading the substrate into an MOC V D reactor; removing a portion of the doped region using an in-situ etch process to undercut the etch/regr owth mask; and regrowing a p-type epitaxial layer [[from]] coupled to the doped region, wherein the p r egie n surface of the n-type I II -nitride substrate is free from the regrown p-type epitaxial layer.
The method of claim 10 wherein: a regrowth interface is defined by the p-type epitaxial layer and the recessed region; and the p-n junction is spaced apart from the regrowth interface. Page 2 of 9 SVG 13198666.04-21-2015.I₈RVHA₈₉PXXIFW3.CLM14700623.1.300.159.2249.292.svg 0.443 6.497 Drawing Black and white
The method of claim 10 wherein the p-n junction is spaced has a depth into the substrate between about 1 nm and about 1 m.
The method of claim 10 wherein the acceptor comprises zinc.
The method of claim 10 wherein the acceptor comprises at least one of magnesium, beryllium, or calcium.
The method of claim 10 wherein the n-type I II -nitride substrate comprises a GaN substrate doped with at least one of silicon or oxygen. 17-23.
The method of claim 10 wherein the p-n junction extends in a direction substantially orthogonal to a growth direction of the I II -nitride material having the second conductivity type. Page 4 of 9
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A method of forming a lateral p-n junction, the method comprising: providing a substrate comprising a GaN-based material characterized by a first conductivity type; forming [[a]] an etch/regrowth masking layer on a surface of the substrate; removing a first portion of the substrate using an ex-situ etch process, whereby an etched surface defined by the etch/regrowth masking la yer is exposed; loading the substrate with the etched surface into an MOC V D reactor; removing an additional portion of the substrate from the etched surface using an in-situ etch process in the MOC V D reactor to undercut the etch/regrowth mask, wherein removing the first and additional portions forms a recessed region in the substrate; and the recessed Pegion and extending along an entie depth of the recessed Page 3 of 9 SVG 13198666.04-21-2015.I₈RVHA₈₉PXXIFW3.CLM14700624.1.300.159.2249.292.svg 0.443 6.497 Graph Black and white regrowing a GaN-based material [[of the]] characterized by a second conductivity type from the doped, aloghe irtife-dept of thef±° eeedegi in at least a portion of the first portion and the additional portion, wherein the surface of the substrate is free from the regrown GaN-based materials.
The method of claim 24, wherein the substrate comprises a GaN substrate.
The method of claim 24, wherein the first conductivity type comprises an n-type.
The method of claim 24, further comprising: forming an electrode on a portion of the substrate to provide an electrical connection to the GaN-based material of the first conductivity type; and forming a second electrode on a portion of the epitaxial layer of the second conductivity type.
The method of claim 24, wherein a width of the first portion is less than a width of the additional portion
The method of claim 24 further comprising, after regrowing the GaN-based material, removing the etch/regrowth masking layer.
Layer stacks claimed or described, ordered top of device to substrate.
lateral p-n junction device in III-nitride (claim 10)
lateral p-n junction device in GaN-based material (claim 24)
Materials described outside the worked examples.
n-type III-nitride substrate
n-type III-nitride epitaxial layer
p-type III-nitride epitaxial layer (regrown)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2C is a simplified plot illustrating energy bandgap as a function of lateral position for the p-n junction illustrated in
Related documents with shared materials, methods, properties, or citations.
lateral p-n junction device (description embodiment)
zinc acceptor dopant
Zn
magnesium acceptor dopant
Mg
beryllium acceptor dopant
Be
calcium acceptor dopant
Ca
n-type GaN substrate doped with silicon or oxygen
GaN
GaN-based material
etch/regrowth mask
GALLIUM NITRIDE SUBSTRATE AND OPTICAL DEVICE USING THE SAME
lateral p-n junction device (description embodiment)
zinc acceptor dopant
Zn
magnesium acceptor dopant
Mg
beryllium acceptor dopant
Be
calcium acceptor dopant
Ca
n-type GaN substrate doped with silicon or oxygen
GaN
GaN-based material
etch/regrowth mask
GALLIUM NITRIDE SUBSTRATE AND OPTICAL DEVICE USING THE SAME
lateral p-n junction device (description embodiment)
zinc acceptor dopant
Zn
magnesium acceptor dopant
Mg
beryllium acceptor dopant
Be
calcium acceptor dopant
Ca
n-type GaN substrate doped with silicon or oxygen
GaN
GaN-based material
etch/regrowth mask
GALLIUM NITRIDE SUBSTRATE AND OPTICAL DEVICE USING THE SAME
lateral p-n junction device (description embodiment)
zinc acceptor dopant
Zn
magnesium acceptor dopant
Mg
beryllium acceptor dopant
Be
calcium acceptor dopant
Ca
n-type GaN substrate doped with silicon or oxygen
GaN
GaN-based material
etch/regrowth mask
GALLIUM NITRIDE SUBSTRATE AND OPTICAL DEVICE USING THE SAME