Patent
US 10,381,230GALLIUM NITRIDE SUBSTRATE AND OPTICAL DEVICE USING THE SAME
Shunsuke YAMAMOTO
US
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Patent
Atlas literature
Patent
US 10,381,230Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 shows a correlative relationship between an accelerating voltage (E b) and electron penetration depth (Re) in the(above formula 1) in case that a GaN …
FIG.3 is a schematic cross sectional view showing an HVP E apparatus for manufacturing a gallium nitride substrate in an embodiment of the present invention; …
FIG.4. In detail, a GaN buffer layer 2 (2500 nm in thickness), an InGaN barrier layer (about 8 nm in thickness) and an In GaN well layer (about 5 nm in …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-12. Canceled
Canceled
A method of making a gallium nitride substrate, comprising: providing a gallium nitride substrate; and measuring a GaL a/CK a peak intensity ratio in energy dispersive X-ray microanalysis (EDX) spectrum of a surface of the gallium nitride substrate, the EDX spectrum being obtained in an EDX of the surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV. Previously presented
The method of claim 13, wherein the measured GaL a/CK a peak intensity ratio in the EDX spectrum of the surface of the gallium nitride substrate is not less than 2. Original
The method of claim 13, further comprising: polishing a surface of the gallium nitride substrate, and wherein the measuring of the GaL a/CK, peak intensity ratio comprises measuring the GaLa/CKa peak intensity ratio of the polished surface. Original
17-20. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
optical device
Materials described outside the worked examples.
gallium nitride substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaLa/CKa peak intensity ratio (EDX, SEM 3kV) | ≥ 2 dimensionless | GaN |
GaLa/CKa peak intensity ratio (EDX, SEM 3kV) — embodiment threshold | ≥ 3 dimensionless |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,381,230Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 shows a correlative relationship between an accelerating voltage (E b) and electron penetration depth (Re) in the(above formula 1) in case that a GaN …
FIG.3 is a schematic cross sectional view showing an HVP E apparatus for manufacturing a gallium nitride substrate in an embodiment of the present invention; …
FIG.4. In detail, a GaN buffer layer 2 (2500 nm in thickness), an InGaN barrier layer (about 8 nm in thickness) and an In GaN well layer (about 5 nm in …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-12. Canceled
Canceled
A method of making a gallium nitride substrate, comprising: providing a gallium nitride substrate; and measuring a GaL a/CK a peak intensity ratio in energy dispersive X-ray microanalysis (EDX) spectrum of a surface of the gallium nitride substrate, the EDX spectrum being obtained in an EDX of the surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV. Previously presented
The method of claim 13, wherein the measured GaL a/CK a peak intensity ratio in the EDX spectrum of the surface of the gallium nitride substrate is not less than 2. Original
The method of claim 13, further comprising: polishing a surface of the gallium nitride substrate, and wherein the measuring of the GaL a/CK, peak intensity ratio comprises measuring the GaLa/CKa peak intensity ratio of the polished surface. Original
17-20. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
optical device
Materials described outside the worked examples.
gallium nitride substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaLa/CKa peak intensity ratio (EDX, SEM 3kV) | ≥ 2 dimensionless | GaN |
GaLa/CKa peak intensity ratio (EDX, SEM 3kV) — embodiment threshold | ≥ 3 dimensionless |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,381,230Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 shows a correlative relationship between an accelerating voltage (E b) and electron penetration depth (Re) in the(above formula 1) in case that a GaN …
FIG.3 is a schematic cross sectional view showing an HVP E apparatus for manufacturing a gallium nitride substrate in an embodiment of the present invention; …
FIG.4. In detail, a GaN buffer layer 2 (2500 nm in thickness), an InGaN barrier layer (about 8 nm in thickness) and an In GaN well layer (about 5 nm in …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-12. Canceled
Canceled
A method of making a gallium nitride substrate, comprising: providing a gallium nitride substrate; and measuring a GaL a/CK a peak intensity ratio in energy dispersive X-ray microanalysis (EDX) spectrum of a surface of the gallium nitride substrate, the EDX spectrum being obtained in an EDX of the surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV. Previously presented
The method of claim 13, wherein the measured GaL a/CK a peak intensity ratio in the EDX spectrum of the surface of the gallium nitride substrate is not less than 2. Original
The method of claim 13, further comprising: polishing a surface of the gallium nitride substrate, and wherein the measuring of the GaL a/CK, peak intensity ratio comprises measuring the GaLa/CKa peak intensity ratio of the polished surface. Original
17-20. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
optical device
Materials described outside the worked examples.
gallium nitride substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaLa/CKa peak intensity ratio (EDX, SEM 3kV) | ≥ 2 dimensionless | GaN |
GaLa/CKa peak intensity ratio (EDX, SEM 3kV) — embodiment threshold | ≥ 3 dimensionless |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,381,230Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 shows a correlative relationship between an accelerating voltage (E b) and electron penetration depth (Re) in the(above formula 1) in case that a GaN …
FIG.3 is a schematic cross sectional view showing an HVP E apparatus for manufacturing a gallium nitride substrate in an embodiment of the present invention; …
FIG.4. In detail, a GaN buffer layer 2 (2500 nm in thickness), an InGaN barrier layer (about 8 nm in thickness) and an In GaN well layer (about 5 nm in …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-12. Canceled
Canceled
A method of making a gallium nitride substrate, comprising: providing a gallium nitride substrate; and measuring a GaL a/CK a peak intensity ratio in energy dispersive X-ray microanalysis (EDX) spectrum of a surface of the gallium nitride substrate, the EDX spectrum being obtained in an EDX of the surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV. Previously presented
The method of claim 13, wherein the measured GaL a/CK a peak intensity ratio in the EDX spectrum of the surface of the gallium nitride substrate is not less than 2. Original
The method of claim 13, further comprising: polishing a surface of the gallium nitride substrate, and wherein the measuring of the GaL a/CK, peak intensity ratio comprises measuring the GaLa/CKa peak intensity ratio of the polished surface. Original
17-20. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
optical device
Materials described outside the worked examples.
gallium nitride substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaLa/CKa peak intensity ratio (EDX, SEM 3kV) | ≥ 2 dimensionless | GaN |
GaLa/CKa peak intensity ratio (EDX, SEM 3kV) — embodiment threshold | ≥ 3 dimensionless |
Related documents with shared materials, methods, properties, or citations.
Temperature | ≤ 77 °C | — |
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS
Temperature | ≤ 77 °C | — |
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS
Temperature | ≤ 77 °C | — |
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS
Temperature | ≤ 77 °C | — |
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS