A method for identifying a density of defects in a GaN sample, the method including the steps of: performing Raman spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of an E 2 peak wavenumber associated with an E 2 phonon peak of the GaN sample at each of the plurality of locations on the GaN sample surface, the E 2 peak wavenumber at each location being indicative of a determinable density of defects within the GaN sample at that location; and using the processor, generating a map of the GaN sample surface, the map providing an indicia of the E 2 peak wavenumber at each of the plurality of locations on the GaN sample surface; wherein the map provides an indicia of the density of defects at each of the plurality of locations in the GaN sample.

A method for identifying a density of charge carriers in a GaN sample, the method including the steps of: performing Raman spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of an A i (LO) peak wavenumber associated with an A i (LO) phonon peak of the GaN sample at each of the plurality of locations on the GaN sample surface, the A i (LO) peak wavenumber at each location being indicative of a determinable density of charge carriers within the GaN sample at that location; and using the processor, generating a map of the GaN sample surface, the map providing an indicia of the A i (LO) peak wavenumber at each of the plurality of locations on the GaN sample surface; wherein the map provides an indicia of the density of charge carriers at each of the plurality of locations in the G aN sample.

A method for identifying a presence of grain boundaries in a G aN sample, the method including the steps of. performing Raman spectroscopy at on a predetermined plurality of locations on a surface of the G aN sample; receiving, at a processor programmed with appropriate software, data of an A i (TO) peak wavenumber associated with an A i (TO) phonon peak of the G aN sample at each of the plurality of locations on the G aN sample surface, the A i (TO) peak wavenumber at each location being indicative of a presence of at least one grain boundary within the G aN sample at that location; and using the processor, generating a map of the G aN sample surface, the map providing an indicia of the A i (TO) peak wavenumber at each of the plurality of locations on the G aN sample surface; wherein the map provides an indicia of a location of the at least one grain boundary in the G aN sample.

A method for identifying at least one area on a surface of a G aN sample suitable for electronic device fabrication, the method including the steps of. performing Raman spectroscopy at a predetermined plurality of locations on the surface of the G aN sample; for each of the plurality of locations on the G aN sample surface, receiving, at a processor programmed with appropriate software, data of at least one of an E 2 peak wavenumber associated with an E 2 phonon peak of the G aN sample, an A i (LO) peak wavenumber associated with an Ai (LO) phonon peak of the G aN sample, and an A i (TO) peak wavenumber associated with an Ai (TO) phonon peak of the G aN sample, the E 2 peak wavenumber at each location being indicative of a determinable density of defects within the GaN sample at that location, the A i (LO) peak wavenumber at each location being indicative of a determinable density of charge carriers within the GaN sample at that location, and the A i (TO) peak wavenumber at each location being indicative of a presence of at least one grain boundary within the GaN sample at that location; using the processor, generating at least one map of the GaN sample surface, the map providing an indicia of the E 2, A i (LO), or A i (TO) peak wavenumber at each of the plurality of locations on the GaN substrate surface; and using the generated map, identifying areas of the GaN sample surface satisfying at least one predetermined defect density, charge carrier concentration, or grain boundary density criterion for fabrication of a predetermined electronic device on the GaN substrate.

A method for identifying a conductivity of a GaN sample, the method including the steps of: performing photoluminescence (PL) spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of a wavenumber at which the photoluminescence spectroscopy exhibits a peak intensity at each of the plurality of locations on the GaN surface, the wavenumber having the peak intensity being indicative of a determinable conductivity of the GaN sample at that location; and using the processor, generating a map of the GaN sample surface, the map providing an indicia of the wavenumber having the peak intensity at each of the plurality of locations on the GaN sample surface; wherein the map provides an indicia of the conductivity at each of the plurality of locations in the GaN sample.

A method for identifying at least one area on a surface of a GaN sample suitable for electronic device fabrication, the method including the steps of: performing photoluminescence (PL) spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of a wavenumber at which the photoluminescence spectroscopy exhibits a peak intensity at each of the plurality of locations on the GaN surface, the wavenumber having the peak intensity being indicative of a determinable conductivity of the GaN sample at that location; and using the processor, generating a map of the G aN sample surface, the map providing an indicia of the wavenumber having the peak intensity at each of the plurality of locations on the G aN sample surface; wherein the map provides an indicia of the conductivity at each of the plurality of locations in the G aN sample; and using the generated map, identifying areas of the G aN sample surface satisfying a predetermined conductivity criterion for fabrication of a predetermined electronic device on the G aN substrate.

A method for identifying a density of defects in a GaN sample, the method including the steps of: performing Raman spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of an E 2 peak wavenumber associated with an E 2 phonon peak of the GaN sample at each of the plurality of locations on the GaN sample surface, the E 2 peak wavenumber at each location being indicative of a determinable density of defects within the GaN sample at that location; and using the processor, generating a map of the GaN sample surface, the map providing an indicia of the E 2 peak wavenumber at each of the plurality of locations on the GaN sample surface; wherein the map provides an indicia of the density of defects at each of the plurality of locations in the GaN sample.

A method for identifying a density of charge carriers in a GaN sample, the method including the steps of: performing Raman spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of an A i (LO) peak wavenumber associated with an A i (LO) phonon peak of the GaN sample at each of the plurality of locations on the GaN sample surface, the A i (LO) peak wavenumber at each location being indicative of a determinable density of charge carriers within the GaN sample at that location; and using the processor, generating a map of the GaN sample surface, the map providing an indicia of the A i (LO) peak wavenumber at each of the plurality of locations on the GaN sample surface; wherein the map provides an indicia of the density of charge carriers at each of the plurality of locations in the G aN sample.

A method for identifying a presence of grain boundaries in a G aN sample, the method including the steps of. performing Raman spectroscopy at on a predetermined plurality of locations on a surface of the G aN sample; receiving, at a processor programmed with appropriate software, data of an A i (TO) peak wavenumber associated with an A i (TO) phonon peak of the G aN sample at each of the plurality of locations on the G aN sample surface, the A i (TO) peak wavenumber at each location being indicative of a presence of at least one grain boundary within the G aN sample at that location; and using the processor, generating a map of the G aN sample surface, the map providing an indicia of the A i (TO) peak wavenumber at each of the plurality of locations on the G aN sample surface; wherein the map provides an indicia of a location of the at least one grain boundary in the G aN sample.

A method for identifying at least one area on a surface of a G aN sample suitable for electronic device fabrication, the method including the steps of. performing Raman spectroscopy at a predetermined plurality of locations on the surface of the G aN sample; for each of the plurality of locations on the G aN sample surface, receiving, at a processor programmed with appropriate software, data of at least one of an E 2 peak wavenumber associated with an E 2 phonon peak of the G aN sample, an A i (LO) peak wavenumber associated with an Ai (LO) phonon peak of the G aN sample, and an A i (TO) peak wavenumber associated with an Ai (TO) phonon peak of the G aN sample, the E 2 peak wavenumber at each location being indicative of a determinable density of defects within the GaN sample at that location, the A i (LO) peak wavenumber at each location being indicative of a determinable density of charge carriers within the GaN sample at that location, and the A i (TO) peak wavenumber at each location being indicative of a presence of at least one grain boundary within the GaN sample at that location; using the processor, generating at least one map of the GaN sample surface, the map providing an indicia of the E 2, A i (LO), or A i (TO) peak wavenumber at each of the plurality of locations on the GaN substrate surface; and using the generated map, identifying areas of the GaN sample surface satisfying at least one predetermined defect density, charge carrier concentration, or grain boundary density criterion for fabrication of a predetermined electronic device on the GaN substrate.

A method for identifying a conductivity of a GaN sample, the method including the steps of: performing photoluminescence (PL) spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of a wavenumber at which the photoluminescence spectroscopy exhibits a peak intensity at each of the plurality of locations on the GaN surface, the wavenumber having the peak intensity being indicative of a determinable conductivity of the GaN sample at that location; and using the processor, generating a map of the GaN sample surface, the map providing an indicia of the wavenumber having the peak intensity at each of the plurality of locations on the GaN sample surface; wherein the map provides an indicia of the conductivity at each of the plurality of locations in the GaN sample.

A method for identifying at least one area on a surface of a GaN sample suitable for electronic device fabrication, the method including the steps of: performing photoluminescence (PL) spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of a wavenumber at which the photoluminescence spectroscopy exhibits a peak intensity at each of the plurality of locations on the GaN surface, the wavenumber having the peak intensity being indicative of a determinable conductivity of the GaN sample at that location; and using the processor, generating a map of the G aN sample surface, the map providing an indicia of the wavenumber having the peak intensity at each of the plurality of locations on the G aN sample surface; wherein the map provides an indicia of the conductivity at each of the plurality of locations in the G aN sample; and using the generated map, identifying areas of the G aN sample surface satisfying a predetermined conductivity criterion for fabrication of a predetermined electronic device on the G aN substrate.

A method for identifying a density of defects in a GaN sample, the method including the steps of: performing Raman spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of an E 2 peak wavenumber associated with an E 2 phonon peak of the GaN sample at each of the plurality of locations on the GaN sample surface, the E 2 peak wavenumber at each location being indicative of a determinable density of defects within the GaN sample at that location; and using the processor, generating a map of the GaN sample surface, the map providing an indicia of the E 2 peak wavenumber at each of the plurality of locations on the GaN sample surface; wherein the map provides an indicia of the density of defects at each of the plurality of locations in the GaN sample.

A method for identifying a density of charge carriers in a GaN sample, the method including the steps of: performing Raman spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of an A i (LO) peak wavenumber associated with an A i (LO) phonon peak of the GaN sample at each of the plurality of locations on the GaN sample surface, the A i (LO) peak wavenumber at each location being indicative of a determinable density of charge carriers within the GaN sample at that location; and using the processor, generating a map of the GaN sample surface, the map providing an indicia of the A i (LO) peak wavenumber at each of the plurality of locations on the GaN sample surface; wherein the map provides an indicia of the density of charge carriers at each of the plurality of locations in the G aN sample.

A method for identifying a presence of grain boundaries in a G aN sample, the method including the steps of. performing Raman spectroscopy at on a predetermined plurality of locations on a surface of the G aN sample; receiving, at a processor programmed with appropriate software, data of an A i (TO) peak wavenumber associated with an A i (TO) phonon peak of the G aN sample at each of the plurality of locations on the G aN sample surface, the A i (TO) peak wavenumber at each location being indicative of a presence of at least one grain boundary within the G aN sample at that location; and using the processor, generating a map of the G aN sample surface, the map providing an indicia of the A i (TO) peak wavenumber at each of the plurality of locations on the G aN sample surface; wherein the map provides an indicia of a location of the at least one grain boundary in the G aN sample.

A method for identifying at least one area on a surface of a G aN sample suitable for electronic device fabrication, the method including the steps of. performing Raman spectroscopy at a predetermined plurality of locations on the surface of the G aN sample; for each of the plurality of locations on the G aN sample surface, receiving, at a processor programmed with appropriate software, data of at least one of an E 2 peak wavenumber associated with an E 2 phonon peak of the G aN sample, an A i (LO) peak wavenumber associated with an Ai (LO) phonon peak of the G aN sample, and an A i (TO) peak wavenumber associated with an Ai (TO) phonon peak of the G aN sample, the E 2 peak wavenumber at each location being indicative of a determinable density of defects within the GaN sample at that location, the A i (LO) peak wavenumber at each location being indicative of a determinable density of charge carriers within the GaN sample at that location, and the A i (TO) peak wavenumber at each location being indicative of a presence of at least one grain boundary within the GaN sample at that location; using the processor, generating at least one map of the GaN sample surface, the map providing an indicia of the E 2, A i (LO), or A i (TO) peak wavenumber at each of the plurality of locations on the GaN substrate surface; and using the generated map, identifying areas of the GaN sample surface satisfying at least one predetermined defect density, charge carrier concentration, or grain boundary density criterion for fabrication of a predetermined electronic device on the GaN substrate.

A method for identifying a conductivity of a GaN sample, the method including the steps of: performing photoluminescence (PL) spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of a wavenumber at which the photoluminescence spectroscopy exhibits a peak intensity at each of the plurality of locations on the GaN surface, the wavenumber having the peak intensity being indicative of a determinable conductivity of the GaN sample at that location; and using the processor, generating a map of the GaN sample surface, the map providing an indicia of the wavenumber having the peak intensity at each of the plurality of locations on the GaN sample surface; wherein the map provides an indicia of the conductivity at each of the plurality of locations in the GaN sample.

A method for identifying at least one area on a surface of a GaN sample suitable for electronic device fabrication, the method including the steps of: performing photoluminescence (PL) spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of a wavenumber at which the photoluminescence spectroscopy exhibits a peak intensity at each of the plurality of locations on the GaN surface, the wavenumber having the peak intensity being indicative of a determinable conductivity of the GaN sample at that location; and using the processor, generating a map of the G aN sample surface, the map providing an indicia of the wavenumber having the peak intensity at each of the plurality of locations on the G aN sample surface; wherein the map provides an indicia of the conductivity at each of the plurality of locations in the G aN sample; and using the generated map, identifying areas of the G aN sample surface satisfying a predetermined conductivity criterion for fabrication of a predetermined electronic device on the G aN substrate.

A method for identifying a density of defects in a GaN sample, the method including the steps of: performing Raman spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of an E 2 peak wavenumber associated with an E 2 phonon peak of the GaN sample at each of the plurality of locations on the GaN sample surface, the E 2 peak wavenumber at each location being indicative of a determinable density of defects within the GaN sample at that location; and using the processor, generating a map of the GaN sample surface, the map providing an indicia of the E 2 peak wavenumber at each of the plurality of locations on the GaN sample surface; wherein the map provides an indicia of the density of defects at each of the plurality of locations in the GaN sample.

A method for identifying a density of charge carriers in a GaN sample, the method including the steps of: performing Raman spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of an A i (LO) peak wavenumber associated with an A i (LO) phonon peak of the GaN sample at each of the plurality of locations on the GaN sample surface, the A i (LO) peak wavenumber at each location being indicative of a determinable density of charge carriers within the GaN sample at that location; and using the processor, generating a map of the GaN sample surface, the map providing an indicia of the A i (LO) peak wavenumber at each of the plurality of locations on the GaN sample surface; wherein the map provides an indicia of the density of charge carriers at each of the plurality of locations in the G aN sample.

A method for identifying a presence of grain boundaries in a G aN sample, the method including the steps of. performing Raman spectroscopy at on a predetermined plurality of locations on a surface of the G aN sample; receiving, at a processor programmed with appropriate software, data of an A i (TO) peak wavenumber associated with an A i (TO) phonon peak of the G aN sample at each of the plurality of locations on the G aN sample surface, the A i (TO) peak wavenumber at each location being indicative of a presence of at least one grain boundary within the G aN sample at that location; and using the processor, generating a map of the G aN sample surface, the map providing an indicia of the A i (TO) peak wavenumber at each of the plurality of locations on the G aN sample surface; wherein the map provides an indicia of a location of the at least one grain boundary in the G aN sample.

A method for identifying at least one area on a surface of a G aN sample suitable for electronic device fabrication, the method including the steps of. performing Raman spectroscopy at a predetermined plurality of locations on the surface of the G aN sample; for each of the plurality of locations on the G aN sample surface, receiving, at a processor programmed with appropriate software, data of at least one of an E 2 peak wavenumber associated with an E 2 phonon peak of the G aN sample, an A i (LO) peak wavenumber associated with an Ai (LO) phonon peak of the G aN sample, and an A i (TO) peak wavenumber associated with an Ai (TO) phonon peak of the G aN sample, the E 2 peak wavenumber at each location being indicative of a determinable density of defects within the GaN sample at that location, the A i (LO) peak wavenumber at each location being indicative of a determinable density of charge carriers within the GaN sample at that location, and the A i (TO) peak wavenumber at each location being indicative of a presence of at least one grain boundary within the GaN sample at that location; using the processor, generating at least one map of the GaN sample surface, the map providing an indicia of the E 2, A i (LO), or A i (TO) peak wavenumber at each of the plurality of locations on the GaN substrate surface; and using the generated map, identifying areas of the GaN sample surface satisfying at least one predetermined defect density, charge carrier concentration, or grain boundary density criterion for fabrication of a predetermined electronic device on the GaN substrate.

A method for identifying a conductivity of a GaN sample, the method including the steps of: performing photoluminescence (PL) spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of a wavenumber at which the photoluminescence spectroscopy exhibits a peak intensity at each of the plurality of locations on the GaN surface, the wavenumber having the peak intensity being indicative of a determinable conductivity of the GaN sample at that location; and using the processor, generating a map of the GaN sample surface, the map providing an indicia of the wavenumber having the peak intensity at each of the plurality of locations on the GaN sample surface; wherein the map provides an indicia of the conductivity at each of the plurality of locations in the GaN sample.

A method for identifying at least one area on a surface of a GaN sample suitable for electronic device fabrication, the method including the steps of: performing photoluminescence (PL) spectroscopy at a predetermined plurality of locations on a surface of the GaN sample; receiving, at a processor programmed with appropriate software, data of a wavenumber at which the photoluminescence spectroscopy exhibits a peak intensity at each of the plurality of locations on the GaN surface, the wavenumber having the peak intensity being indicative of a determinable conductivity of the GaN sample at that location; and using the processor, generating a map of the G aN sample surface, the map providing an indicia of the wavenumber having the peak intensity at each of the plurality of locations on the G aN sample surface; wherein the map provides an indicia of the conductivity at each of the plurality of locations in the G aN sample; and using the generated map, identifying areas of the G aN sample surface satisfying a predetermined conductivity criterion for fabrication of a predetermined electronic device on the G aN substrate.