Patent
US 6,653,215CONTACT TO N-GAN WITH AU TERMINATION
Michael G. Brown
US
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Patent
Atlas literature
Patent
US 6,653,215Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
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canceled
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canceled
Layer stacks claimed or described, ordered top of device to substrate.
n-type ohmic contact stack (Al/Ti/Pt/Au)
light-emitting diode with n-contact
Materials described outside the worked examples.
GaN
nitride semiconductor (III-V)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–10 minutes | — |
Related documents with shared materials, methods, properties, or citations.
OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH
ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS
Patent
Atlas literature
Patent
US 6,653,215Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
n-type ohmic contact stack (Al/Ti/Pt/Au)
light-emitting diode with n-contact
Materials described outside the worked examples.
GaN
nitride semiconductor (III-V)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–10 minutes | — |
Related documents with shared materials, methods, properties, or citations.
OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH
ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS
Patent
Atlas literature
Patent
US 6,653,215Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
n-type ohmic contact stack (Al/Ti/Pt/Au)
light-emitting diode with n-contact
Materials described outside the worked examples.
GaN
nitride semiconductor (III-V)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–10 minutes | — |
Related documents with shared materials, methods, properties, or citations.
OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH
ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS
Patent
Atlas literature
Patent
US 6,653,215Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
n-type ohmic contact stack (Al/Ti/Pt/Au)
light-emitting diode with n-contact
Materials described outside the worked examples.
GaN
nitride semiconductor (III-V)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–10 minutes | — |
Related documents with shared materials, methods, properties, or citations.
OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH
ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS
InGaN
AlGaN
AlInGaN
Al (base layer)
Al
Ti (first barrier layer)
Ti
Ta
Pd
Pt (second barrier layer)
Pt
W
TiW alloy
Au (top layer)
Au
Ag
InGaN
AlGaN
AlInGaN
Al (base layer)
Al
Ti (first barrier layer)
Ti
Ta
Pd
Pt (second barrier layer)
Pt
W
TiW alloy
Au (top layer)
Au
Ag
InGaN
AlGaN
AlInGaN
Al (base layer)
Al
Ti (first barrier layer)
Ti
Ta
Pd
Pt (second barrier layer)
Pt
W
TiW alloy
Au (top layer)
Au
Ag
InGaN
AlGaN
AlInGaN
Al (base layer)
Al
Ti (first barrier layer)
Ti
Ta
Pd
Pt (second barrier layer)
Pt
W
TiW alloy
Au (top layer)
Au
Ag