Patent
Atlas literature
Patent
US 8,653,503Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a flowchart illustrating a method of the present invention.
Figures 2(a), 2(b) and 2c) are cross-sectional schematics illustrating three possible MQW structures (x 4 periods) for non-polar and semi-polar light emitting devices.
Figure 3 is a cross-sectional schematic of a final structure of a non-polar or semi- 25 polar UV LED, with emission wavelength ranging from 280 nm to 360 nm, and wherein the cladding layer is closely lattice-matched to the GaN substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(CURENTLY AMENDED) A device structure, comprising: one or more semi-polar or non-polar I II -nitride active layers or regions.oriing having a peak emission in an ultraviolet wavelength range or at a wavelength of 360 nanometers or less ""d
The device structure of claim 1, wherein the active layers arc.o.y non a nori*po-iaor semn-::po-rsugt:u hais subsC-u-dLrn esi}oV&rFno en~:veca ndo s,"t v.: s contain no more dislocations than [[a]] non-polar or semi-polar substrate upon which the active layers were grown.
The device structure of claim 1, wherein the active layers are not relaxed.
The device structure of claim 1, wherein the active layers are lattice matched to, and epitaxially on or above, a I II -nitride underlayer or substrate.
The device structure of claim 1, wherein the active layers have no more dislocations than is characteristic of layers that are: epitaxially on or above a I II -nitride underlayer or substrate, and lattice matched to the I II -nitride underlayer or substrate, or not relaxed.
The device structure of claim 1, further comprising: one or more n-type Al xIn₁- N or Al InzGasy N layers, with 0 y 1, 0 z 1, and 0 K y +z<1, one or more p-type Al xIn₁- N or Al InzGasy N layers, with 0 y 1, 0 z 1 and 0 y +z<1, wherein the active layers are between the n-type A lIn₁- N or A lInzGary N layers and the one or more p-type Al xIn₁- N or Al InzGa1y N layers.
The device structure of claim 1, wherein the active layers have an Indium composition ranging from 1 0% to 3 0%.
The device structure of claim 1, wherein the active layers are III- nitride layers including at least Aluminum (Al) and Indium (In) and the peak emission is at the wavelength ranging from 280 nm to 360 nm.
The device structure of claim 1, further comprising a I II -nitride layer upon which the active layers or regions are grown, wherein the I II -nitride layers are lattice matched and contain no more dislocations than a non-polar or semi-polar substrate upon which the I II -nitride layer was grown.
The device structure of claim 1, further comprising one or more I II -nitride layers upon which the active layers or regions are grown, wherein the I II -nitride layers and the quantum wells contain indium and aluminum.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
non-polar or semi-polar III-nitride UV light emitting device structure
non-polar or semi-polar III-nitride quantum well LED/LD structure
Materials described outside the worked examples.
AlInN
AlxIn₁-xN
AlInGaN
AlyInzGa₁-y-zN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
peak emission wavelength range (claimed) | 280–360 nm | AlxIn₁-xNAlyInzGa₁-y-zN |
indium composition of active layers (claimed) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,653,503Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a flowchart illustrating a method of the present invention.
Figures 2(a), 2(b) and 2c) are cross-sectional schematics illustrating three possible MQW structures (x 4 periods) for non-polar and semi-polar light emitting devices.
Figure 3 is a cross-sectional schematic of a final structure of a non-polar or semi- 25 polar UV LED, with emission wavelength ranging from 280 nm to 360 nm, and wherein the cladding layer is closely lattice-matched to the GaN substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(CURENTLY AMENDED) A device structure, comprising: one or more semi-polar or non-polar I II -nitride active layers or regions.oriing having a peak emission in an ultraviolet wavelength range or at a wavelength of 360 nanometers or less ""d
The device structure of claim 1, wherein the active layers arc.o.y non a nori*po-iaor semn-::po-rsugt:u hais subsC-u-dLrn esi}oV&rFno en~:veca ndo s,"t v.: s contain no more dislocations than [[a]] non-polar or semi-polar substrate upon which the active layers were grown.
The device structure of claim 1, wherein the active layers are not relaxed.
The device structure of claim 1, wherein the active layers are lattice matched to, and epitaxially on or above, a I II -nitride underlayer or substrate.
The device structure of claim 1, wherein the active layers have no more dislocations than is characteristic of layers that are: epitaxially on or above a I II -nitride underlayer or substrate, and lattice matched to the I II -nitride underlayer or substrate, or not relaxed.
The device structure of claim 1, further comprising: one or more n-type Al xIn₁- N or Al InzGasy N layers, with 0 y 1, 0 z 1, and 0 K y +z<1, one or more p-type Al xIn₁- N or Al InzGasy N layers, with 0 y 1, 0 z 1 and 0 y +z<1, wherein the active layers are between the n-type A lIn₁- N or A lInzGary N layers and the one or more p-type Al xIn₁- N or Al InzGa1y N layers.
The device structure of claim 1, wherein the active layers have an Indium composition ranging from 1 0% to 3 0%.
The device structure of claim 1, wherein the active layers are III- nitride layers including at least Aluminum (Al) and Indium (In) and the peak emission is at the wavelength ranging from 280 nm to 360 nm.
The device structure of claim 1, further comprising a I II -nitride layer upon which the active layers or regions are grown, wherein the I II -nitride layers are lattice matched and contain no more dislocations than a non-polar or semi-polar substrate upon which the I II -nitride layer was grown.
The device structure of claim 1, further comprising one or more I II -nitride layers upon which the active layers or regions are grown, wherein the I II -nitride layers and the quantum wells contain indium and aluminum.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
non-polar or semi-polar III-nitride UV light emitting device structure
non-polar or semi-polar III-nitride quantum well LED/LD structure
Materials described outside the worked examples.
AlInN
AlxIn₁-xN
AlInGaN
AlyInzGa₁-y-zN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
peak emission wavelength range (claimed) | 280–360 nm | AlxIn₁-xNAlyInzGa₁-y-zN |
indium composition of active layers (claimed) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,653,503Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a flowchart illustrating a method of the present invention.
Figures 2(a), 2(b) and 2c) are cross-sectional schematics illustrating three possible MQW structures (x 4 periods) for non-polar and semi-polar light emitting devices.
Figure 3 is a cross-sectional schematic of a final structure of a non-polar or semi- 25 polar UV LED, with emission wavelength ranging from 280 nm to 360 nm, and wherein the cladding layer is closely lattice-matched to the GaN substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(CURENTLY AMENDED) A device structure, comprising: one or more semi-polar or non-polar I II -nitride active layers or regions.oriing having a peak emission in an ultraviolet wavelength range or at a wavelength of 360 nanometers or less ""d
The device structure of claim 1, wherein the active layers arc.o.y non a nori*po-iaor semn-::po-rsugt:u hais subsC-u-dLrn esi}oV&rFno en~:veca ndo s,"t v.: s contain no more dislocations than [[a]] non-polar or semi-polar substrate upon which the active layers were grown.
The device structure of claim 1, wherein the active layers are not relaxed.
The device structure of claim 1, wherein the active layers are lattice matched to, and epitaxially on or above, a I II -nitride underlayer or substrate.
The device structure of claim 1, wherein the active layers have no more dislocations than is characteristic of layers that are: epitaxially on or above a I II -nitride underlayer or substrate, and lattice matched to the I II -nitride underlayer or substrate, or not relaxed.
The device structure of claim 1, further comprising: one or more n-type Al xIn₁- N or Al InzGasy N layers, with 0 y 1, 0 z 1, and 0 K y +z<1, one or more p-type Al xIn₁- N or Al InzGasy N layers, with 0 y 1, 0 z 1 and 0 y +z<1, wherein the active layers are between the n-type A lIn₁- N or A lInzGary N layers and the one or more p-type Al xIn₁- N or Al InzGa1y N layers.
The device structure of claim 1, wherein the active layers have an Indium composition ranging from 1 0% to 3 0%.
The device structure of claim 1, wherein the active layers are III- nitride layers including at least Aluminum (Al) and Indium (In) and the peak emission is at the wavelength ranging from 280 nm to 360 nm.
The device structure of claim 1, further comprising a I II -nitride layer upon which the active layers or regions are grown, wherein the I II -nitride layers are lattice matched and contain no more dislocations than a non-polar or semi-polar substrate upon which the I II -nitride layer was grown.
The device structure of claim 1, further comprising one or more I II -nitride layers upon which the active layers or regions are grown, wherein the I II -nitride layers and the quantum wells contain indium and aluminum.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
non-polar or semi-polar III-nitride UV light emitting device structure
non-polar or semi-polar III-nitride quantum well LED/LD structure
Materials described outside the worked examples.
AlInN
AlxIn₁-xN
AlInGaN
AlyInzGa₁-y-zN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
peak emission wavelength range (claimed) | 280–360 nm | AlxIn₁-xNAlyInzGa₁-y-zN |
indium composition of active layers (claimed) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,653,503Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a flowchart illustrating a method of the present invention.
Figures 2(a), 2(b) and 2c) are cross-sectional schematics illustrating three possible MQW structures (x 4 periods) for non-polar and semi-polar light emitting devices.
Figure 3 is a cross-sectional schematic of a final structure of a non-polar or semi- 25 polar UV LED, with emission wavelength ranging from 280 nm to 360 nm, and wherein the cladding layer is closely lattice-matched to the GaN substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(CURENTLY AMENDED) A device structure, comprising: one or more semi-polar or non-polar I II -nitride active layers or regions.oriing having a peak emission in an ultraviolet wavelength range or at a wavelength of 360 nanometers or less ""d
The device structure of claim 1, wherein the active layers arc.o.y non a nori*po-iaor semn-::po-rsugt:u hais subsC-u-dLrn esi}oV&rFno en~:veca ndo s,"t v.: s contain no more dislocations than [[a]] non-polar or semi-polar substrate upon which the active layers were grown.
The device structure of claim 1, wherein the active layers are not relaxed.
The device structure of claim 1, wherein the active layers are lattice matched to, and epitaxially on or above, a I II -nitride underlayer or substrate.
The device structure of claim 1, wherein the active layers have no more dislocations than is characteristic of layers that are: epitaxially on or above a I II -nitride underlayer or substrate, and lattice matched to the I II -nitride underlayer or substrate, or not relaxed.
The device structure of claim 1, further comprising: one or more n-type Al xIn₁- N or Al InzGasy N layers, with 0 y 1, 0 z 1, and 0 K y +z<1, one or more p-type Al xIn₁- N or Al InzGasy N layers, with 0 y 1, 0 z 1 and 0 y +z<1, wherein the active layers are between the n-type A lIn₁- N or A lInzGary N layers and the one or more p-type Al xIn₁- N or Al InzGa1y N layers.
The device structure of claim 1, wherein the active layers have an Indium composition ranging from 1 0% to 3 0%.
The device structure of claim 1, wherein the active layers are III- nitride layers including at least Aluminum (Al) and Indium (In) and the peak emission is at the wavelength ranging from 280 nm to 360 nm.
The device structure of claim 1, further comprising a I II -nitride layer upon which the active layers or regions are grown, wherein the I II -nitride layers are lattice matched and contain no more dislocations than a non-polar or semi-polar substrate upon which the I II -nitride layer was grown.
The device structure of claim 1, further comprising one or more I II -nitride layers upon which the active layers or regions are grown, wherein the I II -nitride layers and the quantum wells contain indium and aluminum.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
non-polar or semi-polar III-nitride UV light emitting device structure
non-polar or semi-polar III-nitride quantum well LED/LD structure
Materials described outside the worked examples.
AlInN
AlxIn₁-xN
AlInGaN
AlyInzGa₁-y-zN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
peak emission wavelength range (claimed) | 280–360 nm | AlxIn₁-xNAlyInzGa₁-y-zN |
indium composition of active layers (claimed) |
Related documents with shared materials, methods, properties, or citations.
LED or Laser Diode structure with IQE > 15% and EQE > 1%
Gallium Nitride
GaN
| 10–30 % |
AlxIn₁-xNAlyInzGa₁-y-zN |
IQE of AlInGaN-based LEDs (background/prior art reference) | 15 % | AlyInzGa₁-y-zN |
Pressure | 5–760 torr | — |
Temperature | 600–1000 °C | — |
Thickness | 3–10 nm | — |
Temperature | 10–80 °C | — |
Duration | 1–10 minutes | — |
Thickness | ≤ 360 nm | — |
Thickness | ≤ 1000000 cm | — |
LED or Laser Diode structure with IQE > 15% and EQE > 1%
Gallium Nitride
GaN
| 10–30 % |
AlxIn₁-xNAlyInzGa₁-y-zN |
IQE of AlInGaN-based LEDs (background/prior art reference) | 15 % | AlyInzGa₁-y-zN |
Pressure | 5–760 torr | — |
Temperature | 600–1000 °C | — |
Thickness | 3–10 nm | — |
Temperature | 10–80 °C | — |
Duration | 1–10 minutes | — |
Thickness | ≤ 360 nm | — |
Thickness | ≤ 1000000 cm | — |
LED or Laser Diode structure with IQE > 15% and EQE > 1%
Gallium Nitride
GaN
| 10–30 % |
AlxIn₁-xNAlyInzGa₁-y-zN |
IQE of AlInGaN-based LEDs (background/prior art reference) | 15 % | AlyInzGa₁-y-zN |
Pressure | 5–760 torr | — |
Temperature | 600–1000 °C | — |
Thickness | 3–10 nm | — |
Temperature | 10–80 °C | — |
Duration | 1–10 minutes | — |
Thickness | ≤ 360 nm | — |
Thickness | ≤ 1000000 cm | — |
LED or Laser Diode structure with IQE > 15% and EQE > 1%
Gallium Nitride
GaN
| 10–30 % |
AlxIn₁-xNAlyInzGa₁-y-zN |
IQE of AlInGaN-based LEDs (background/prior art reference) | 15 % | AlyInzGa₁-y-zN |
Pressure | 5–760 torr | — |
Temperature | 600–1000 °C | — |
Thickness | 3–10 nm | — |
Temperature | 10–80 °C | — |
Duration | 1–10 minutes | — |
Thickness | ≤ 360 nm | — |
Thickness | ≤ 1000000 cm | — |
