Patent
US 8,962,365OF I NVENTION
Issei Satoh
US
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Patent
Atlas literature
Patent
US 8,962,365Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
536: 911810 CLAIMS 1. A composite substrate, comprising: a support substrate (11) dissoluble in hydrofluoric acid; and 5 a single crystal film (13) arranged on a side of a main surface (1 1 m) of said support substrate (11), a coefficient of thermal expansion in the main surface (1 1 m) of said support substrate (11) being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal.
Layer stacks claimed or described, ordered top of device to substrate.
composite substrate
Materials described outside the worked examples.
support substrate dissoluble in hydrofluoric acid
single crystal film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
CTE of support substrate main surface relative to GaN crystal | — | support substrate dissoluble in hydrofluoric acid |
CTE of support substrate main surface relative to GaN crystal (preferred range) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,962,365Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
536: 911810 CLAIMS 1. A composite substrate, comprising: a support substrate (11) dissoluble in hydrofluoric acid; and 5 a single crystal film (13) arranged on a side of a main surface (1 1 m) of said support substrate (11), a coefficient of thermal expansion in the main surface (1 1 m) of said support substrate (11) being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal.
Layer stacks claimed or described, ordered top of device to substrate.
composite substrate
Materials described outside the worked examples.
support substrate dissoluble in hydrofluoric acid
single crystal film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
CTE of support substrate main surface relative to GaN crystal | — | support substrate dissoluble in hydrofluoric acid |
CTE of support substrate main surface relative to GaN crystal (preferred range) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,962,365Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
536: 911810 CLAIMS 1. A composite substrate, comprising: a support substrate (11) dissoluble in hydrofluoric acid; and 5 a single crystal film (13) arranged on a side of a main surface (1 1 m) of said support substrate (11), a coefficient of thermal expansion in the main surface (1 1 m) of said support substrate (11) being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal.
Layer stacks claimed or described, ordered top of device to substrate.
composite substrate
Materials described outside the worked examples.
support substrate dissoluble in hydrofluoric acid
single crystal film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
CTE of support substrate main surface relative to GaN crystal | — | support substrate dissoluble in hydrofluoric acid |
CTE of support substrate main surface relative to GaN crystal (preferred range) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,962,365Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
536: 911810 CLAIMS 1. A composite substrate, comprising: a support substrate (11) dissoluble in hydrofluoric acid; and 5 a single crystal film (13) arranged on a side of a main surface (1 1 m) of said support substrate (11), a coefficient of thermal expansion in the main surface (1 1 m) of said support substrate (11) being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal.
Layer stacks claimed or described, ordered top of device to substrate.
composite substrate
Materials described outside the worked examples.
support substrate dissoluble in hydrofluoric acid
single crystal film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
CTE of support substrate main surface relative to GaN crystal | — | support substrate dissoluble in hydrofluoric acid |
CTE of support substrate main surface relative to GaN crystal (preferred range) |
Related documents with shared materials, methods, properties, or citations.
GaN crystal
GaN
zirconia
ZrO₂
silica
SiO₂
ZrO₂-SiO₂ composite oxide
yttria stabilized zirconia
Al₂O₃-SiO₂ composite oxide
GaN-based film
GaN-based buffer layer
GaN-based single crystal layer
support substrate dissoluble in hydrofluoric acid |
CTE of support substrate main surface relative to GaN crystal (further preferred range) | — | support substrate dissoluble in hydrofluoric acid |
area of main surface of single crystal film | — | single crystal film |
content of yttria stabilized zirconia to total of Al2O3-SiO2 composite oxide and yttria stabilized zirconia | — | yttria stabilized zirconia |
content of yttria to yttria stabilized zirconia | — | yttria stabilized zirconia |
GaN crystal
GaN
zirconia
ZrO₂
silica
SiO₂
ZrO₂-SiO₂ composite oxide
yttria stabilized zirconia
Al₂O₃-SiO₂ composite oxide
GaN-based film
GaN-based buffer layer
GaN-based single crystal layer
support substrate dissoluble in hydrofluoric acid |
CTE of support substrate main surface relative to GaN crystal (further preferred range) | — | support substrate dissoluble in hydrofluoric acid |
area of main surface of single crystal film | — | single crystal film |
content of yttria stabilized zirconia to total of Al2O3-SiO2 composite oxide and yttria stabilized zirconia | — | yttria stabilized zirconia |
content of yttria to yttria stabilized zirconia | — | yttria stabilized zirconia |
GaN crystal
GaN
zirconia
ZrO₂
silica
SiO₂
ZrO₂-SiO₂ composite oxide
yttria stabilized zirconia
Al₂O₃-SiO₂ composite oxide
GaN-based film
GaN-based buffer layer
GaN-based single crystal layer
support substrate dissoluble in hydrofluoric acid |
CTE of support substrate main surface relative to GaN crystal (further preferred range) | — | support substrate dissoluble in hydrofluoric acid |
area of main surface of single crystal film | — | single crystal film |
content of yttria stabilized zirconia to total of Al2O3-SiO2 composite oxide and yttria stabilized zirconia | — | yttria stabilized zirconia |
content of yttria to yttria stabilized zirconia | — | yttria stabilized zirconia |
GaN crystal
GaN
zirconia
ZrO₂
silica
SiO₂
ZrO₂-SiO₂ composite oxide
yttria stabilized zirconia
Al₂O₃-SiO₂ composite oxide
GaN-based film
GaN-based buffer layer
GaN-based single crystal layer
support substrate dissoluble in hydrofluoric acid |
CTE of support substrate main surface relative to GaN crystal (further preferred range) | — | support substrate dissoluble in hydrofluoric acid |
area of main surface of single crystal film | — | single crystal film |
content of yttria stabilized zirconia to total of Al2O3-SiO2 composite oxide and yttria stabilized zirconia | — | yttria stabilized zirconia |
content of yttria to yttria stabilized zirconia | — | yttria stabilized zirconia |