A method for producing a GaN layered substrate, comprising the steps of: subjecting a C-plane sapphire substrate having an off-angle of 0.5 to 5 degrees to a high-temperature nitriding treatment at 800° C. to 1,000° C. and/or a treatment for deposition of crystalline AlN on the C-plane sapphire substrate to carry out a surface treatment of the C-plane sapphire substrate; carrying out epitaxial growth of GaN on the surface of the surface-treated C-plane sapphire substrate, so that a GaN film is formed on the surface of the surface-treated C-plane sapphire substrate, whereby a GaN film carrier having a surface of an N polar face is produced; forming an ion implantation region by carrying out ion implantation on the GaN film of the GaN film carrier; Evaluation result of GaN transfer Silicon oxide Support thin film film surface substrate surface Polishing Polishing rough- Substrate rough-by Depo- by ness configu- ness Crystal-CMP sition CMP Ra ration Ra linity* None Done Done 0.3 nm Si 8 nm 300 substrate arcsec (Thermal oxide formation) Done None None 0.2 nm Si 0.3 nm 250 substrate arcsec (Thermal oxide formation) None Done Done 0.2 nm Si 60 nm 600 substrate arcsec (Thermal oxide formation) None Done Done 0.3 nm Si 80 nm 800 substrate arcsec (Thermal oxide formation) plane laminating and bonding a support substrate with a surface of the GaN film of the GaN film carrier, to which the ion implantation has been carried out; and performing delamination at the ion-implanted region in the GaN film to transfer a GaN thin film onto the support substrate, to obtain a GaN layered substrate having, on the support substrate, the GaN thin film whose surface is a Ga polar face.

A method for producing a GaN layered substrate, comprising the steps of: subjecting a C-plane sapphire substrate having an off-angle of 0.5 to 5 degrees to a high-temperature nitriding treatment at 800° C. to 1,000° C. and/or a treatment for deposition of crystalline AlN on the C-plane sapphire substrate to carry out a surface treatment of the C-plane sapphire substrate; carrying out epitaxial growth of GaN on the surface of the surface-treated C-plane sapphire substrate, so that a GaN film is formed on the surface of the surface-treated C-plane sapphire substrate, whereby a GaN film carrier having a surface of an N polar face is produced; forming an ion implantation region by carrying out ion implantation on the GaN film of the GaN film carrier; Evaluation result of GaN transfer Silicon oxide Support thin film film surface substrate surface Polishing Polishing rough- Substrate rough-by Depo- by ness configu- ness Crystal-CMP sition CMP Ra ration Ra linity* None Done Done 0.3 nm Si 8 nm 300 substrate arcsec (Thermal oxide formation) Done None None 0.2 nm Si 0.3 nm 250 substrate arcsec (Thermal oxide formation) None Done Done 0.2 nm Si 60 nm 600 substrate arcsec (Thermal oxide formation) None Done Done 0.3 nm Si 80 nm 800 substrate arcsec (Thermal oxide formation) plane laminating and bonding a support substrate with a surface of the GaN film of the GaN film carrier, to which the ion implantation has been carried out; and performing delamination at the ion-implanted region in the GaN film to transfer a GaN thin film onto the support substrate, to obtain a GaN layered substrate having, on the support substrate, the GaN thin film whose surface is a Ga polar face.

A method for producing a GaN layered substrate, comprising the steps of: subjecting a C-plane sapphire substrate having an off-angle of 0.5 to 5 degrees to a high-temperature nitriding treatment at 800° C. to 1,000° C. and/or a treatment for deposition of crystalline AlN on the C-plane sapphire substrate to carry out a surface treatment of the C-plane sapphire substrate; carrying out epitaxial growth of GaN on the surface of the surface-treated C-plane sapphire substrate, so that a GaN film is formed on the surface of the surface-treated C-plane sapphire substrate, whereby a GaN film carrier having a surface of an N polar face is produced; forming an ion implantation region by carrying out ion implantation on the GaN film of the GaN film carrier; Evaluation result of GaN transfer Silicon oxide Support thin film film surface substrate surface Polishing Polishing rough- Substrate rough-by Depo- by ness configu- ness Crystal-CMP sition CMP Ra ration Ra linity* None Done Done 0.3 nm Si 8 nm 300 substrate arcsec (Thermal oxide formation) Done None None 0.2 nm Si 0.3 nm 250 substrate arcsec (Thermal oxide formation) None Done Done 0.2 nm Si 60 nm 600 substrate arcsec (Thermal oxide formation) None Done Done 0.3 nm Si 80 nm 800 substrate arcsec (Thermal oxide formation) plane laminating and bonding a support substrate with a surface of the GaN film of the GaN film carrier, to which the ion implantation has been carried out; and performing delamination at the ion-implanted region in the GaN film to transfer a GaN thin film onto the support substrate, to obtain a GaN layered substrate having, on the support substrate, the GaN thin film whose surface is a Ga polar face.

A method for producing a GaN layered substrate, comprising the steps of: subjecting a C-plane sapphire substrate having an off-angle of 0.5 to 5 degrees to a high-temperature nitriding treatment at 800° C. to 1,000° C. and/or a treatment for deposition of crystalline AlN on the C-plane sapphire substrate to carry out a surface treatment of the C-plane sapphire substrate; carrying out epitaxial growth of GaN on the surface of the surface-treated C-plane sapphire substrate, so that a GaN film is formed on the surface of the surface-treated C-plane sapphire substrate, whereby a GaN film carrier having a surface of an N polar face is produced; forming an ion implantation region by carrying out ion implantation on the GaN film of the GaN film carrier; Evaluation result of GaN transfer Silicon oxide Support thin film film surface substrate surface Polishing Polishing rough- Substrate rough-by Depo- by ness configu- ness Crystal-CMP sition CMP Ra ration Ra linity* None Done Done 0.3 nm Si 8 nm 300 substrate arcsec (Thermal oxide formation) Done None None 0.2 nm Si 0.3 nm 250 substrate arcsec (Thermal oxide formation) None Done Done 0.2 nm Si 60 nm 600 substrate arcsec (Thermal oxide formation) None Done Done 0.3 nm Si 80 nm 800 substrate arcsec (Thermal oxide formation) plane laminating and bonding a support substrate with a surface of the GaN film of the GaN film carrier, to which the ion implantation has been carried out; and performing delamination at the ion-implanted region in the GaN film to transfer a GaN thin film onto the support substrate, to obtain a GaN layered substrate having, on the support substrate, the GaN thin film whose surface is a Ga polar face.