Patent details
Patent
US 8,946,772Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The substrate according to claim 1, wherein the convex portions and the growth spaces form a kagome pattern wherein a hexagonal growth surface is surrounded by six triangular convex portions, when the substrate for epitaxial growth is planarly viewed.
The substrate according to claim 1, wherein the uneven surface is formed by dry etch processing of a surface of the single crystal part using an etching mask that has a kagome pattern provided with equilateral hexagonal openings wherein said kagome pattern has equilateral triangles and equilateral hexagons in which the 2 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692204.2.295.176.1162.279.svg 0.343 2.89 Maths Black and white equilateral hexagons are arranged so that the center of each equilateral hexagon is positioned at the center of the area defined by the neighboring triangles.
The substrate according to claim 1, wherein the plurality of convex portions are a part of the single crystal part.
The substrate according to claim 1, wherein the single crystal part is composed of a sapphire.
The substrate according to claim 5, wherein the substrate is composed of a single crystal sapphire.
A substrate being formed by dry etch processing of a c-plane substrate and comprising: an uneven surface having a triangular prismatic or triangular truncated pyramidal convex portion which has an approximately equilateral-triangular upper surface; and a growth space being equilaterally hexagonal surrounded by six convex portions which are arranged so as to form a kagome pattern wherein a hexagonal growth surface is surrounded by six triangular convex portions, when planarly viewed, and wherein the growth space is a flat surface and the growth space is isolated from an adjacent growth space in the kagome patter pat tern by two of the convex portions. 3 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692205.2.296.181.1165.283.svg 0.34 2.897 Chemistry Black and white currently amended
canceled
A method for manufacturing a GaN-based semiconductor film, the method comprising: crystal growth of the c-axis-oriented GaN-based semiconductor crystal on the SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692205.10.301.1146.2459.1216.svg 0.233 7.193 Graph Black and white withdrawn
The method for manufacturing a GaN-based semiconductor film according to claim 10, the crystal growth further comprising forming one hexagonal pyramidal or hexagonal truncated pyramidal GaN-based semiconductor crystal on each of the growth spaces of the substrate. withdrawn
A GaN-based semiconductor light emitting element comprising: 4 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692206.2.299.179.1166.281.svg 0.34 2.89 Graph Black and white the substrate for epitaxial growth according to claim 1; and a GaN-based semiconductor film formed by epitaxially growing a c-axis-oriented GaN-based semiconductor crystal on the substrate, wherein the GaN-based semiconductor film comprises a plurality of GaN-based semiconductor crystal layers comprising at least an active layer and two clad layers sandwiching the active layer.
A substrate being formed by processing a c -plane substrate, comprising: an uneven surface having a plurality of convex portions, each having an upper surface that are arranged so that each of the convex portions has three other convex portions in directions different from each other by 120 degrees; and a plurality of growth spaces which are surrounded by six of the convex portions, and wherein the growth spaces are flat surfaces and the growth spaces are isolated from each other by two of the plurality of convex portions.
A method for manufacturing a GaN-based semiconductor film, the method comprising: an epitaxial growth of a c-axis-oriented GaN-based semiconductor crystal on the substrate according to claim 15. withdrawn
A GaN-based semiconductor film comprising: a c-axis-oriented GaN-based semiconductor crystal epitaxially grown on the substrate according to claim 15. 5 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692207.2.290.182.1157.285.svg 0.343 2.89 Graph Black and white SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692207.5.293.697.2470.744.svg 0.157 7.257 Graph Black and white
A method for manufacturing a GaN-based semiconductor light forming a plurality of c-axis-oriented GaN-based semiconductor crystal layers comprising at least an active layer and two clad layers sandwiching the active layer by epitaxial growth on the substrate according to claim 15. withdrawn
A GaN-based semiconductor light emitting element comprising: the substrate according to claim 15; and a GaN-based semiconductor film comprising a c-axis-oriented GaN-based SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692207.15.298.1730.2457.1793.svg 0.21 7.197 Graph Black and white wherein the GaN-based semiconductor film comprises a plurality of GaN-based semiconductor crystal layers comprising at least an active layer and two clad layers sandwiching the active layer. 6
Layer stacks claimed or described, ordered top of device to substrate.
substrate for epitaxial growth (single crystal part with kagome uneven surface)
patterned c-plane substrate with kagome uneven surface
GaN-based semiconductor light emitting element
Materials described outside the worked examples.
sapphire
Al₂O₃
GaN-based semiconductor
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 8,946,772Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The substrate according to claim 1, wherein the convex portions and the growth spaces form a kagome pattern wherein a hexagonal growth surface is surrounded by six triangular convex portions, when the substrate for epitaxial growth is planarly viewed.
The substrate according to claim 1, wherein the uneven surface is formed by dry etch processing of a surface of the single crystal part using an etching mask that has a kagome pattern provided with equilateral hexagonal openings wherein said kagome pattern has equilateral triangles and equilateral hexagons in which the 2 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692204.2.295.176.1162.279.svg 0.343 2.89 Maths Black and white equilateral hexagons are arranged so that the center of each equilateral hexagon is positioned at the center of the area defined by the neighboring triangles.
The substrate according to claim 1, wherein the plurality of convex portions are a part of the single crystal part.
The substrate according to claim 1, wherein the single crystal part is composed of a sapphire.
The substrate according to claim 5, wherein the substrate is composed of a single crystal sapphire.
A substrate being formed by dry etch processing of a c-plane substrate and comprising: an uneven surface having a triangular prismatic or triangular truncated pyramidal convex portion which has an approximately equilateral-triangular upper surface; and a growth space being equilaterally hexagonal surrounded by six convex portions which are arranged so as to form a kagome pattern wherein a hexagonal growth surface is surrounded by six triangular convex portions, when planarly viewed, and wherein the growth space is a flat surface and the growth space is isolated from an adjacent growth space in the kagome patter pat tern by two of the convex portions. 3 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692205.2.296.181.1165.283.svg 0.34 2.897 Chemistry Black and white currently amended
canceled
A method for manufacturing a GaN-based semiconductor film, the method comprising: crystal growth of the c-axis-oriented GaN-based semiconductor crystal on the SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692205.10.301.1146.2459.1216.svg 0.233 7.193 Graph Black and white withdrawn
The method for manufacturing a GaN-based semiconductor film according to claim 10, the crystal growth further comprising forming one hexagonal pyramidal or hexagonal truncated pyramidal GaN-based semiconductor crystal on each of the growth spaces of the substrate. withdrawn
A GaN-based semiconductor light emitting element comprising: 4 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692206.2.299.179.1166.281.svg 0.34 2.89 Graph Black and white the substrate for epitaxial growth according to claim 1; and a GaN-based semiconductor film formed by epitaxially growing a c-axis-oriented GaN-based semiconductor crystal on the substrate, wherein the GaN-based semiconductor film comprises a plurality of GaN-based semiconductor crystal layers comprising at least an active layer and two clad layers sandwiching the active layer.
A substrate being formed by processing a c -plane substrate, comprising: an uneven surface having a plurality of convex portions, each having an upper surface that are arranged so that each of the convex portions has three other convex portions in directions different from each other by 120 degrees; and a plurality of growth spaces which are surrounded by six of the convex portions, and wherein the growth spaces are flat surfaces and the growth spaces are isolated from each other by two of the plurality of convex portions.
A method for manufacturing a GaN-based semiconductor film, the method comprising: an epitaxial growth of a c-axis-oriented GaN-based semiconductor crystal on the substrate according to claim 15. withdrawn
A GaN-based semiconductor film comprising: a c-axis-oriented GaN-based semiconductor crystal epitaxially grown on the substrate according to claim 15. 5 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692207.2.290.182.1157.285.svg 0.343 2.89 Graph Black and white SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692207.5.293.697.2470.744.svg 0.157 7.257 Graph Black and white
A method for manufacturing a GaN-based semiconductor light forming a plurality of c-axis-oriented GaN-based semiconductor crystal layers comprising at least an active layer and two clad layers sandwiching the active layer by epitaxial growth on the substrate according to claim 15. withdrawn
A GaN-based semiconductor light emitting element comprising: the substrate according to claim 15; and a GaN-based semiconductor film comprising a c-axis-oriented GaN-based SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692207.15.298.1730.2457.1793.svg 0.21 7.197 Graph Black and white wherein the GaN-based semiconductor film comprises a plurality of GaN-based semiconductor crystal layers comprising at least an active layer and two clad layers sandwiching the active layer. 6
Layer stacks claimed or described, ordered top of device to substrate.
substrate for epitaxial growth (single crystal part with kagome uneven surface)
patterned c-plane substrate with kagome uneven surface
GaN-based semiconductor light emitting element
Materials described outside the worked examples.
sapphire
Al₂O₃
GaN-based semiconductor
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 8,946,772Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The substrate according to claim 1, wherein the convex portions and the growth spaces form a kagome pattern wherein a hexagonal growth surface is surrounded by six triangular convex portions, when the substrate for epitaxial growth is planarly viewed.
The substrate according to claim 1, wherein the uneven surface is formed by dry etch processing of a surface of the single crystal part using an etching mask that has a kagome pattern provided with equilateral hexagonal openings wherein said kagome pattern has equilateral triangles and equilateral hexagons in which the 2 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692204.2.295.176.1162.279.svg 0.343 2.89 Maths Black and white equilateral hexagons are arranged so that the center of each equilateral hexagon is positioned at the center of the area defined by the neighboring triangles.
The substrate according to claim 1, wherein the plurality of convex portions are a part of the single crystal part.
The substrate according to claim 1, wherein the single crystal part is composed of a sapphire.
The substrate according to claim 5, wherein the substrate is composed of a single crystal sapphire.
A substrate being formed by dry etch processing of a c-plane substrate and comprising: an uneven surface having a triangular prismatic or triangular truncated pyramidal convex portion which has an approximately equilateral-triangular upper surface; and a growth space being equilaterally hexagonal surrounded by six convex portions which are arranged so as to form a kagome pattern wherein a hexagonal growth surface is surrounded by six triangular convex portions, when planarly viewed, and wherein the growth space is a flat surface and the growth space is isolated from an adjacent growth space in the kagome patter pat tern by two of the convex portions. 3 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692205.2.296.181.1165.283.svg 0.34 2.897 Chemistry Black and white currently amended
canceled
A method for manufacturing a GaN-based semiconductor film, the method comprising: crystal growth of the c-axis-oriented GaN-based semiconductor crystal on the SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692205.10.301.1146.2459.1216.svg 0.233 7.193 Graph Black and white withdrawn
The method for manufacturing a GaN-based semiconductor film according to claim 10, the crystal growth further comprising forming one hexagonal pyramidal or hexagonal truncated pyramidal GaN-based semiconductor crystal on each of the growth spaces of the substrate. withdrawn
A GaN-based semiconductor light emitting element comprising: 4 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692206.2.299.179.1166.281.svg 0.34 2.89 Graph Black and white the substrate for epitaxial growth according to claim 1; and a GaN-based semiconductor film formed by epitaxially growing a c-axis-oriented GaN-based semiconductor crystal on the substrate, wherein the GaN-based semiconductor film comprises a plurality of GaN-based semiconductor crystal layers comprising at least an active layer and two clad layers sandwiching the active layer.
A substrate being formed by processing a c -plane substrate, comprising: an uneven surface having a plurality of convex portions, each having an upper surface that are arranged so that each of the convex portions has three other convex portions in directions different from each other by 120 degrees; and a plurality of growth spaces which are surrounded by six of the convex portions, and wherein the growth spaces are flat surfaces and the growth spaces are isolated from each other by two of the plurality of convex portions.
A method for manufacturing a GaN-based semiconductor film, the method comprising: an epitaxial growth of a c-axis-oriented GaN-based semiconductor crystal on the substrate according to claim 15. withdrawn
A GaN-based semiconductor film comprising: a c-axis-oriented GaN-based semiconductor crystal epitaxially grown on the substrate according to claim 15. 5 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692207.2.290.182.1157.285.svg 0.343 2.89 Graph Black and white SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692207.5.293.697.2470.744.svg 0.157 7.257 Graph Black and white
A method for manufacturing a GaN-based semiconductor light forming a plurality of c-axis-oriented GaN-based semiconductor crystal layers comprising at least an active layer and two clad layers sandwiching the active layer by epitaxial growth on the substrate according to claim 15. withdrawn
A GaN-based semiconductor light emitting element comprising: the substrate according to claim 15; and a GaN-based semiconductor film comprising a c-axis-oriented GaN-based SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692207.15.298.1730.2457.1793.svg 0.21 7.197 Graph Black and white wherein the GaN-based semiconductor film comprises a plurality of GaN-based semiconductor crystal layers comprising at least an active layer and two clad layers sandwiching the active layer. 6
Layer stacks claimed or described, ordered top of device to substrate.
substrate for epitaxial growth (single crystal part with kagome uneven surface)
patterned c-plane substrate with kagome uneven surface
GaN-based semiconductor light emitting element
Materials described outside the worked examples.
sapphire
Al₂O₃
GaN-based semiconductor
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 8,946,772Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The substrate according to claim 1, wherein the convex portions and the growth spaces form a kagome pattern wherein a hexagonal growth surface is surrounded by six triangular convex portions, when the substrate for epitaxial growth is planarly viewed.
The substrate according to claim 1, wherein the uneven surface is formed by dry etch processing of a surface of the single crystal part using an etching mask that has a kagome pattern provided with equilateral hexagonal openings wherein said kagome pattern has equilateral triangles and equilateral hexagons in which the 2 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692204.2.295.176.1162.279.svg 0.343 2.89 Maths Black and white equilateral hexagons are arranged so that the center of each equilateral hexagon is positioned at the center of the area defined by the neighboring triangles.
The substrate according to claim 1, wherein the plurality of convex portions are a part of the single crystal part.
The substrate according to claim 1, wherein the single crystal part is composed of a sapphire.
The substrate according to claim 5, wherein the substrate is composed of a single crystal sapphire.
A substrate being formed by dry etch processing of a c-plane substrate and comprising: an uneven surface having a triangular prismatic or triangular truncated pyramidal convex portion which has an approximately equilateral-triangular upper surface; and a growth space being equilaterally hexagonal surrounded by six convex portions which are arranged so as to form a kagome pattern wherein a hexagonal growth surface is surrounded by six triangular convex portions, when planarly viewed, and wherein the growth space is a flat surface and the growth space is isolated from an adjacent growth space in the kagome patter pat tern by two of the convex portions. 3 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692205.2.296.181.1165.283.svg 0.34 2.897 Chemistry Black and white currently amended
canceled
A method for manufacturing a GaN-based semiconductor film, the method comprising: crystal growth of the c-axis-oriented GaN-based semiconductor crystal on the SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692205.10.301.1146.2459.1216.svg 0.233 7.193 Graph Black and white withdrawn
The method for manufacturing a GaN-based semiconductor film according to claim 10, the crystal growth further comprising forming one hexagonal pyramidal or hexagonal truncated pyramidal GaN-based semiconductor crystal on each of the growth spaces of the substrate. withdrawn
A GaN-based semiconductor light emitting element comprising: 4 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692206.2.299.179.1166.281.svg 0.34 2.89 Graph Black and white the substrate for epitaxial growth according to claim 1; and a GaN-based semiconductor film formed by epitaxially growing a c-axis-oriented GaN-based semiconductor crystal on the substrate, wherein the GaN-based semiconductor film comprises a plurality of GaN-based semiconductor crystal layers comprising at least an active layer and two clad layers sandwiching the active layer.
A substrate being formed by processing a c -plane substrate, comprising: an uneven surface having a plurality of convex portions, each having an upper surface that are arranged so that each of the convex portions has three other convex portions in directions different from each other by 120 degrees; and a plurality of growth spaces which are surrounded by six of the convex portions, and wherein the growth spaces are flat surfaces and the growth spaces are isolated from each other by two of the plurality of convex portions.
A method for manufacturing a GaN-based semiconductor film, the method comprising: an epitaxial growth of a c-axis-oriented GaN-based semiconductor crystal on the substrate according to claim 15. withdrawn
A GaN-based semiconductor film comprising: a c-axis-oriented GaN-based semiconductor crystal epitaxially grown on the substrate according to claim 15. 5 SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692207.2.290.182.1157.285.svg 0.343 2.89 Graph Black and white SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692207.5.293.697.2470.744.svg 0.157 7.257 Graph Black and white
A method for manufacturing a GaN-based semiconductor light forming a plurality of c-axis-oriented GaN-based semiconductor crystal layers comprising at least an active layer and two clad layers sandwiching the active layer by epitaxial growth on the substrate according to claim 15. withdrawn
A GaN-based semiconductor light emitting element comprising: the substrate according to claim 15; and a GaN-based semiconductor film comprising a c-axis-oriented GaN-based SVG 12867787.09-11-2014.HZYIQKY₁PXXIFW3.CLM26692207.15.298.1730.2457.1793.svg 0.21 7.197 Graph Black and white wherein the GaN-based semiconductor film comprises a plurality of GaN-based semiconductor crystal layers comprising at least an active layer and two clad layers sandwiching the active layer. 6
Layer stacks claimed or described, ordered top of device to substrate.
substrate for epitaxial growth (single crystal part with kagome uneven surface)
patterned c-plane substrate with kagome uneven surface
GaN-based semiconductor light emitting element
Materials described outside the worked examples.
sapphire
Al₂O₃
GaN-based semiconductor
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
single crystal (non-GaN-based semiconductor)
METHOD OF FABRICATING GALLIUM NITRIDE SUBSTRATE
single crystal (non-GaN-based semiconductor)
METHOD OF FABRICATING GALLIUM NITRIDE SUBSTRATE
single crystal (non-GaN-based semiconductor)
METHOD OF FABRICATING GALLIUM NITRIDE SUBSTRATE
single crystal (non-GaN-based semiconductor)
METHOD OF FABRICATING GALLIUM NITRIDE SUBSTRATE
