GaN Based LED having Reduced Thickness and Method for Making the Same

Steven D. Lester

Patent

Atlas literature

Patent

US 9,082,892

GaN Based LED having Reduced Thickness and Method for Making the Same

Steven D. Lester

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 2 dependent

1
IndependentGaNGaNactive layerGaN-based vertical LED with reduced thickness n-type GaN layer
Application No. 13/754,517 Docket No.: MANP.P0009US.D I/1 1409304 Reply to Oﬃce Action of THE CLAIMS 1. A method for making a light emitting device comprising: fabricating a light-emitting structure on a substrate, said light emitting structure comprising an active layer sandwiched between a p-side semiconductor layer and an n-side semiconductor layer, said p-side semiconductor layer including a p-type GaN sub-layer, said n-side semiconductor layer including an n-type GaN sub-layer, said active layer emitting light of a predetermined wavelength when electrons and holes from said n-side semiconductor layer and said p-side semiconductor layer, respectively, combine therein, said light emitting structure further comprising a ﬁrst bonding electrode disposed on a surface of said p-side semiconductor layer, wherein the surface on which the ﬁrst bonding electrode is disposed is not in contact with said active layer; bonding said light-emitting structure to a carrier comprising a sheet of conducting material having top and bottom principle surfaces such that said ﬁrst bonding electrode is bonded to said top principle surface of said carrier, said carrier comprising a carrier bonding electrode bonded to said bottom principle surface; removing said substrate from said light-emitting structure so as to expose a surface of said n -side semiconductor layer, wherein the exposed surface is not adjacent to said active layer; and thinning said n-side semiconductor layer from said exposed surface of said n-side semiconductor layer to a thickness less than 1.25 pm.
1. 2
  Dependent← claim 1GaNGaN-based vertical LED with reduced thickness n-type GaN layer
  The method of Claim 1 further comprising, after said thinning of said n-side semiconductor layer, etching a surface of said n-side semiconductor layer, wherein the etched surface is not adjacent to said active layer, to provide scattering features having dimensions greater than 0.1 pm.
411
Independent
02575.1 2 Application No. 13/7 54,517 Docket No.: MANP.P 000 9US.D 1/1 1409304 Reply to Oﬃce Action of

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based vertical LED with reduced thickness n-type GaN layer

GaNn-side semiconductor layer (thinned, <1.25 µm)

active layeractive layer

GaNp-side semiconductor layer

first bonding electrode (p-side)first bonding electrode (p-side)

carrier bonding electrodecarrier bonding electrode

conducting carrier materialcarrier

Materials

Materials described outside the worked examples.

p-type GaN

GaN

P-Side Semiconductor Layer

N-Side Semiconductor Layer

active layer

Process steps

Additional fabrication and treatment steps described in the patent.

Epitaxial Growth

Step 1

Process details

notes:Conventional GaN-based LED layer deposition on sapphire substrate

layers:buffer layer, n-type GaN layer, active layer, p-type GaN layer, electrode layer

substrate:sapphire

Materials:GaN

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
n-type GaN layer thickness	≤ 1.25 µm	GaN

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GaN Based LED having Reduced Thickness and Method for Making the Same | Matter42 Literature