Patent
US 9,224,597METHOD FOR MANUFACTURING GALLIUM NITRIDE-BASED FILM CHIP
Hanmin Zhao
US
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US 9,224,597Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 E is a cross-sectional view after bonding the second glue with a second temporary substrate. [0053] FIG. IF is a cross-sectional view after removing the …
FIG. 2. And the thickniess of 10O00angstroms Ag layer as a reflective metal la yer 280 is evaporated on the p-type GiaN layer 210 and then alloyed at the …
FIG.3A.The epitaxial layer 31 (1 may be etched to form an epitaxial layer separation 31 0, for SVG …
FIG. 21. A fter that, when the permanent silicon substrate 2210 is protected, t he second temporary silic on substrate 270 anti Auln layer 260 are etched by …
FIG. 211). A first glue 230 is coated on the protective layer 220 and SVG 14083487.02-09-2014.HRKJ₇₉₉SPXXIFW2.SPEC25357315.2.294.345.1541.460.svg 0.383 4.157 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing gallium nitride-based film chip, the method comprising: a. growing an n-type GaN layer, an active layer and a p-type GaN layer in turn on [[the]]a sapphire substrate to form semiconductor multilayer structure; b. thinning and polishing the sapphire substrate; c. coating a first glue on the semiconductor multilayer structure and solidifying the first glue with a first temporary substrate, wherein thickness of the first glue is between 10 microns and 100 microns, curing temperature is between 80 C and 160 0 C, curing time is between 30 minutes and 120 minutes; d. removing the sapphire substrate off byvia laser, coating a second glue on [[the]]a peeling surface and solidifying the second glue with a second temporary substrate, wherein thickness of the second glue is between 5 microns and 30 microns, curing temperature is between 120 ° C and 180 0 C, curing time is between l0 minutes and 60 minutes; e. removing the first temporary substrate and the first glue; f. bonding the semiconductor multilayer structure with a permanent substrate by eutectic bonding; g. removing the second temporary substrate and the second glue..
The method of claim 1, wherein coating a conductive reflecting compound metal layer is coated on the semiconductor multilayer structure by evaporating, then alloying the semiconductor multilayer structure is alloyed, and the alloying temperature is between 400 0 C and 600 C.
The method of claim 1, wherein the eutectic bonding is Au-Sn bonding, the bonding temperature is between 200 0 C and 400 C. 8-28.
-6.. Application No.: 14/083,487 Attorney Docket No. SZ-P-003
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based film chip
Materials described outside the worked examples.
n-type GaN layer
GaN
sapphire substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG.3A.The epitaxial layer 31 (1 may be etched to form an epitaxial layer separation 31 0, for SVG …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 µm | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,224,597Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 E is a cross-sectional view after bonding the second glue with a second temporary substrate. [0053] FIG. IF is a cross-sectional view after removing the …
FIG. 2. And the thickniess of 10O00angstroms Ag layer as a reflective metal la yer 280 is evaporated on the p-type GiaN layer 210 and then alloyed at the …
FIG.3A.The epitaxial layer 31 (1 may be etched to form an epitaxial layer separation 31 0, for SVG …
FIG. 21. A fter that, when the permanent silicon substrate 2210 is protected, t he second temporary silic on substrate 270 anti Auln layer 260 are etched by …
FIG. 211). A first glue 230 is coated on the protective layer 220 and SVG 14083487.02-09-2014.HRKJ₇₉₉SPXXIFW2.SPEC25357315.2.294.345.1541.460.svg 0.383 4.157 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing gallium nitride-based film chip, the method comprising: a. growing an n-type GaN layer, an active layer and a p-type GaN layer in turn on [[the]]a sapphire substrate to form semiconductor multilayer structure; b. thinning and polishing the sapphire substrate; c. coating a first glue on the semiconductor multilayer structure and solidifying the first glue with a first temporary substrate, wherein thickness of the first glue is between 10 microns and 100 microns, curing temperature is between 80 C and 160 0 C, curing time is between 30 minutes and 120 minutes; d. removing the sapphire substrate off byvia laser, coating a second glue on [[the]]a peeling surface and solidifying the second glue with a second temporary substrate, wherein thickness of the second glue is between 5 microns and 30 microns, curing temperature is between 120 ° C and 180 0 C, curing time is between l0 minutes and 60 minutes; e. removing the first temporary substrate and the first glue; f. bonding the semiconductor multilayer structure with a permanent substrate by eutectic bonding; g. removing the second temporary substrate and the second glue..
The method of claim 1, wherein coating a conductive reflecting compound metal layer is coated on the semiconductor multilayer structure by evaporating, then alloying the semiconductor multilayer structure is alloyed, and the alloying temperature is between 400 0 C and 600 C.
The method of claim 1, wherein the eutectic bonding is Au-Sn bonding, the bonding temperature is between 200 0 C and 400 C. 8-28.
-6.. Application No.: 14/083,487 Attorney Docket No. SZ-P-003
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based film chip
Materials described outside the worked examples.
n-type GaN layer
GaN
sapphire substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG.3A.The epitaxial layer 31 (1 may be etched to form an epitaxial layer separation 31 0, for SVG …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 µm | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,224,597Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 E is a cross-sectional view after bonding the second glue with a second temporary substrate. [0053] FIG. IF is a cross-sectional view after removing the …
FIG. 2. And the thickniess of 10O00angstroms Ag layer as a reflective metal la yer 280 is evaporated on the p-type GiaN layer 210 and then alloyed at the …
FIG.3A.The epitaxial layer 31 (1 may be etched to form an epitaxial layer separation 31 0, for SVG …
FIG. 21. A fter that, when the permanent silicon substrate 2210 is protected, t he second temporary silic on substrate 270 anti Auln layer 260 are etched by …
FIG. 211). A first glue 230 is coated on the protective layer 220 and SVG 14083487.02-09-2014.HRKJ₇₉₉SPXXIFW2.SPEC25357315.2.294.345.1541.460.svg 0.383 4.157 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing gallium nitride-based film chip, the method comprising: a. growing an n-type GaN layer, an active layer and a p-type GaN layer in turn on [[the]]a sapphire substrate to form semiconductor multilayer structure; b. thinning and polishing the sapphire substrate; c. coating a first glue on the semiconductor multilayer structure and solidifying the first glue with a first temporary substrate, wherein thickness of the first glue is between 10 microns and 100 microns, curing temperature is between 80 C and 160 0 C, curing time is between 30 minutes and 120 minutes; d. removing the sapphire substrate off byvia laser, coating a second glue on [[the]]a peeling surface and solidifying the second glue with a second temporary substrate, wherein thickness of the second glue is between 5 microns and 30 microns, curing temperature is between 120 ° C and 180 0 C, curing time is between l0 minutes and 60 minutes; e. removing the first temporary substrate and the first glue; f. bonding the semiconductor multilayer structure with a permanent substrate by eutectic bonding; g. removing the second temporary substrate and the second glue..
The method of claim 1, wherein coating a conductive reflecting compound metal layer is coated on the semiconductor multilayer structure by evaporating, then alloying the semiconductor multilayer structure is alloyed, and the alloying temperature is between 400 0 C and 600 C.
The method of claim 1, wherein the eutectic bonding is Au-Sn bonding, the bonding temperature is between 200 0 C and 400 C. 8-28.
-6.. Application No.: 14/083,487 Attorney Docket No. SZ-P-003
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based film chip
Materials described outside the worked examples.
n-type GaN layer
GaN
sapphire substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG.3A.The epitaxial layer 31 (1 may be etched to form an epitaxial layer separation 31 0, for SVG …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 µm | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,224,597Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 E is a cross-sectional view after bonding the second glue with a second temporary substrate. [0053] FIG. IF is a cross-sectional view after removing the …
FIG. 2. And the thickniess of 10O00angstroms Ag layer as a reflective metal la yer 280 is evaporated on the p-type GiaN layer 210 and then alloyed at the …
FIG.3A.The epitaxial layer 31 (1 may be etched to form an epitaxial layer separation 31 0, for SVG …
FIG. 21. A fter that, when the permanent silicon substrate 2210 is protected, t he second temporary silic on substrate 270 anti Auln layer 260 are etched by …
FIG. 211). A first glue 230 is coated on the protective layer 220 and SVG 14083487.02-09-2014.HRKJ₇₉₉SPXXIFW2.SPEC25357315.2.294.345.1541.460.svg 0.383 4.157 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing gallium nitride-based film chip, the method comprising: a. growing an n-type GaN layer, an active layer and a p-type GaN layer in turn on [[the]]a sapphire substrate to form semiconductor multilayer structure; b. thinning and polishing the sapphire substrate; c. coating a first glue on the semiconductor multilayer structure and solidifying the first glue with a first temporary substrate, wherein thickness of the first glue is between 10 microns and 100 microns, curing temperature is between 80 C and 160 0 C, curing time is between 30 minutes and 120 minutes; d. removing the sapphire substrate off byvia laser, coating a second glue on [[the]]a peeling surface and solidifying the second glue with a second temporary substrate, wherein thickness of the second glue is between 5 microns and 30 microns, curing temperature is between 120 ° C and 180 0 C, curing time is between l0 minutes and 60 minutes; e. removing the first temporary substrate and the first glue; f. bonding the semiconductor multilayer structure with a permanent substrate by eutectic bonding; g. removing the second temporary substrate and the second glue..
The method of claim 1, wherein coating a conductive reflecting compound metal layer is coated on the semiconductor multilayer structure by evaporating, then alloying the semiconductor multilayer structure is alloyed, and the alloying temperature is between 400 0 C and 600 C.
The method of claim 1, wherein the eutectic bonding is Au-Sn bonding, the bonding temperature is between 200 0 C and 400 C. 8-28.
-6.. Application No.: 14/083,487 Attorney Docket No. SZ-P-003
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based film chip
Materials described outside the worked examples.
n-type GaN layer
GaN
sapphire substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG.3A.The epitaxial layer 31 (1 may be etched to form an epitaxial layer separation 31 0, for SVG …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 µm | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
first glue
second glue
conductive reflecting compound metal layer
Au-Sn eutectic bonding material
Au-Sn
| 30–120 minutes |
| — |
Thickness | 5–30 µm | — |
first glue
second glue
conductive reflecting compound metal layer
Au-Sn eutectic bonding material
Au-Sn
| 30–120 minutes |
| — |
Thickness | 5–30 µm | — |
first glue
second glue
conductive reflecting compound metal layer
Au-Sn eutectic bonding material
Au-Sn
| 30–120 minutes |
| — |
Thickness | 5–30 µm | — |
first glue
second glue
conductive reflecting compound metal layer
Au-Sn eutectic bonding material
Au-Sn
| 30–120 minutes |
| — |
Thickness | 5–30 µm | — |