Patent
US 8,217,498GALLIUM NITRIDE SEMICONDUCTOR DEVICE ON SOI AND PROCESS FOR MAKING SAME
Rajaram Bhat
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,217,498Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is. a block diagram illustrating the structure of a gallium nitride based LED device in accordance with one or more embodiments of the present …
FIGS. 2-3 are block diagrams illustrating intermediate structures formed using processes of the present invention to produce the LED device of
FIG. 3; and [0021]
FIGS. 4-5 are graphs illustrating the known relat i onships between external quantum efficiency of an LED of a given area as a function of current; [0020]
FIGS. 6-8 are block diagrams illustrating intermediate structures formed using processes of the present invention to produce a semiconductor on insulator …
FIG. 7. Prior to or after the contact, the structure (s) comprising the donor semiconductor wafer 120, the exfoliation layer 122, and the glass substrate 102 …
FIG. 8, the donor semiconductor wafer 120 and the glass substrate 102 are then separated, which may include some peeling if they have not already become …
FIGS. 9-11 are block diagrams illustrating intermediate structures formed using processes of the present invention to produce a large area intermediate …
FIGS. 10-11, 15 the single crystal gallium nitride layer 106 may grow through lateral epitaxy in the seams 124 to result in a single, integrated layer 106. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus, comprising: a transparent substrate i nc itdingtin ordez ars surface,a bulkIaverformed from a material selected from the group consisting of glass, glass ceramic, and transparent ceramic s layerj'ornw ie IIof ngCeratffIC tJa.sMn1aSQgoadi sur face; a single crystal silicon layer bonded to thesecond surface of the transparent substrate; and a single crystal gallium nitride layer grown on the single crystal silicon layer, h. iae-ifice.tts~bo ~vr
The apparatus of claim 1, wherein the single crystal silicon layer is of a 1, 1, 1, orientation.
The apparatus of claim 1, wherein the single crystal silicon layer is about 1-100 nm thick.
The apparatus of claim 1, wherein the single crystal silicon layer is formed from separate tiles having seams therebetween in which single crystal gallium nitride has grown.
2.
The apparatus o f clim wiew4 s eesieJmpnevei ecnsiiacXeof tetranggi3gent sysatrae.
7.
A semiconductor on insulator substrate comprising: 2 Attorney Docket No.: SP 0 7-207 a transparent substrate formed of glass or glass ceramic and includes, in order, a first surface, a bulk layer, an enhanced positive ion concentration layer, a reduced positive ion concentration layer tLat is forncdof a nogeramig gas s, a second surface, where the enhanced positive ion concentration layer contains substantially all modifier positive ions from the reduced positive ion concentration layer as a result of ion migration; a single crystal silicon layer irec, bonded to the second surface of the transparent substrate; a conductive or semiconductive oxide layer located between the second surface of the substrate and the single crystal silicon layer; and a single crystal gallium nitride layer on the single crystal silicon layer
The semiconductor on insulator substrate of claim 8, wherein the single crystal silicon layer is directly bonded to the second surface of the transparent substrate.
An LED structure, comprising: a transparent substrate --iiggeir.ordcr:a frstsurgce a bul. Layer formed from a material selected from the group consisting of glass, glass ceramic, and transparent ceramics, a l''er jareg~o~ernggass. aaseodura; a single crystal silicon layer direcfl v bonded to the second uracz,of ta transparent substrate; and a single crystal gallium nitride layer grown on the single crystal silicon layer, wherein the gallium nitride layer includes an n-doped layer and a p-doped layer forming an LED 10.-21.
Layer stacks claimed or described, ordered top of device to substrate.
apparatus/semiconductor-on-insulator structure with GaN
semiconductor on insulator substrate with ion migration layers and oxide interlayer
Materials described outside the worked examples.
transparent substrate
glass
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN growth temperature | ≥ 750 °C | GaN |
single crystal silicon layer thickness (claimed range) | 1–100 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,217,498Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is. a block diagram illustrating the structure of a gallium nitride based LED device in accordance with one or more embodiments of the present …
FIGS. 2-3 are block diagrams illustrating intermediate structures formed using processes of the present invention to produce the LED device of
FIG. 3; and [0021]
FIGS. 4-5 are graphs illustrating the known relat i onships between external quantum efficiency of an LED of a given area as a function of current; [0020]
FIGS. 6-8 are block diagrams illustrating intermediate structures formed using processes of the present invention to produce a semiconductor on insulator …
FIG. 7. Prior to or after the contact, the structure (s) comprising the donor semiconductor wafer 120, the exfoliation layer 122, and the glass substrate 102 …
FIG. 8, the donor semiconductor wafer 120 and the glass substrate 102 are then separated, which may include some peeling if they have not already become …
FIGS. 9-11 are block diagrams illustrating intermediate structures formed using processes of the present invention to produce a large area intermediate …
FIGS. 10-11, 15 the single crystal gallium nitride layer 106 may grow through lateral epitaxy in the seams 124 to result in a single, integrated layer 106. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus, comprising: a transparent substrate i nc itdingtin ordez ars surface,a bulkIaverformed from a material selected from the group consisting of glass, glass ceramic, and transparent ceramic s layerj'ornw ie IIof ngCeratffIC tJa.sMn1aSQgoadi sur face; a single crystal silicon layer bonded to thesecond surface of the transparent substrate; and a single crystal gallium nitride layer grown on the single crystal silicon layer, h. iae-ifice.tts~bo ~vr
The apparatus of claim 1, wherein the single crystal silicon layer is of a 1, 1, 1, orientation.
The apparatus of claim 1, wherein the single crystal silicon layer is about 1-100 nm thick.
The apparatus of claim 1, wherein the single crystal silicon layer is formed from separate tiles having seams therebetween in which single crystal gallium nitride has grown.
2.
The apparatus o f clim wiew4 s eesieJmpnevei ecnsiiacXeof tetranggi3gent sysatrae.
7.
A semiconductor on insulator substrate comprising: 2 Attorney Docket No.: SP 0 7-207 a transparent substrate formed of glass or glass ceramic and includes, in order, a first surface, a bulk layer, an enhanced positive ion concentration layer, a reduced positive ion concentration layer tLat is forncdof a nogeramig gas s, a second surface, where the enhanced positive ion concentration layer contains substantially all modifier positive ions from the reduced positive ion concentration layer as a result of ion migration; a single crystal silicon layer irec, bonded to the second surface of the transparent substrate; a conductive or semiconductive oxide layer located between the second surface of the substrate and the single crystal silicon layer; and a single crystal gallium nitride layer on the single crystal silicon layer
The semiconductor on insulator substrate of claim 8, wherein the single crystal silicon layer is directly bonded to the second surface of the transparent substrate.
An LED structure, comprising: a transparent substrate --iiggeir.ordcr:a frstsurgce a bul. Layer formed from a material selected from the group consisting of glass, glass ceramic, and transparent ceramics, a l''er jareg~o~ernggass. aaseodura; a single crystal silicon layer direcfl v bonded to the second uracz,of ta transparent substrate; and a single crystal gallium nitride layer grown on the single crystal silicon layer, wherein the gallium nitride layer includes an n-doped layer and a p-doped layer forming an LED 10.-21.
Layer stacks claimed or described, ordered top of device to substrate.
apparatus/semiconductor-on-insulator structure with GaN
semiconductor on insulator substrate with ion migration layers and oxide interlayer
Materials described outside the worked examples.
transparent substrate
glass
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN growth temperature | ≥ 750 °C | GaN |
single crystal silicon layer thickness (claimed range) | 1–100 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,217,498Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is. a block diagram illustrating the structure of a gallium nitride based LED device in accordance with one or more embodiments of the present …
FIGS. 2-3 are block diagrams illustrating intermediate structures formed using processes of the present invention to produce the LED device of
FIG. 3; and [0021]
FIGS. 4-5 are graphs illustrating the known relat i onships between external quantum efficiency of an LED of a given area as a function of current; [0020]
FIGS. 6-8 are block diagrams illustrating intermediate structures formed using processes of the present invention to produce a semiconductor on insulator …
FIG. 7. Prior to or after the contact, the structure (s) comprising the donor semiconductor wafer 120, the exfoliation layer 122, and the glass substrate 102 …
FIG. 8, the donor semiconductor wafer 120 and the glass substrate 102 are then separated, which may include some peeling if they have not already become …
FIGS. 9-11 are block diagrams illustrating intermediate structures formed using processes of the present invention to produce a large area intermediate …
FIGS. 10-11, 15 the single crystal gallium nitride layer 106 may grow through lateral epitaxy in the seams 124 to result in a single, integrated layer 106. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus, comprising: a transparent substrate i nc itdingtin ordez ars surface,a bulkIaverformed from a material selected from the group consisting of glass, glass ceramic, and transparent ceramic s layerj'ornw ie IIof ngCeratffIC tJa.sMn1aSQgoadi sur face; a single crystal silicon layer bonded to thesecond surface of the transparent substrate; and a single crystal gallium nitride layer grown on the single crystal silicon layer, h. iae-ifice.tts~bo ~vr
The apparatus of claim 1, wherein the single crystal silicon layer is of a 1, 1, 1, orientation.
The apparatus of claim 1, wherein the single crystal silicon layer is about 1-100 nm thick.
The apparatus of claim 1, wherein the single crystal silicon layer is formed from separate tiles having seams therebetween in which single crystal gallium nitride has grown.
2.
The apparatus o f clim wiew4 s eesieJmpnevei ecnsiiacXeof tetranggi3gent sysatrae.
7.
A semiconductor on insulator substrate comprising: 2 Attorney Docket No.: SP 0 7-207 a transparent substrate formed of glass or glass ceramic and includes, in order, a first surface, a bulk layer, an enhanced positive ion concentration layer, a reduced positive ion concentration layer tLat is forncdof a nogeramig gas s, a second surface, where the enhanced positive ion concentration layer contains substantially all modifier positive ions from the reduced positive ion concentration layer as a result of ion migration; a single crystal silicon layer irec, bonded to the second surface of the transparent substrate; a conductive or semiconductive oxide layer located between the second surface of the substrate and the single crystal silicon layer; and a single crystal gallium nitride layer on the single crystal silicon layer
The semiconductor on insulator substrate of claim 8, wherein the single crystal silicon layer is directly bonded to the second surface of the transparent substrate.
An LED structure, comprising: a transparent substrate --iiggeir.ordcr:a frstsurgce a bul. Layer formed from a material selected from the group consisting of glass, glass ceramic, and transparent ceramics, a l''er jareg~o~ernggass. aaseodura; a single crystal silicon layer direcfl v bonded to the second uracz,of ta transparent substrate; and a single crystal gallium nitride layer grown on the single crystal silicon layer, wherein the gallium nitride layer includes an n-doped layer and a p-doped layer forming an LED 10.-21.
Layer stacks claimed or described, ordered top of device to substrate.
apparatus/semiconductor-on-insulator structure with GaN
semiconductor on insulator substrate with ion migration layers and oxide interlayer
Materials described outside the worked examples.
transparent substrate
glass
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN growth temperature | ≥ 750 °C | GaN |
single crystal silicon layer thickness (claimed range) | 1–100 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,217,498Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is. a block diagram illustrating the structure of a gallium nitride based LED device in accordance with one or more embodiments of the present …
FIGS. 2-3 are block diagrams illustrating intermediate structures formed using processes of the present invention to produce the LED device of
FIG. 3; and [0021]
FIGS. 4-5 are graphs illustrating the known relat i onships between external quantum efficiency of an LED of a given area as a function of current; [0020]
FIGS. 6-8 are block diagrams illustrating intermediate structures formed using processes of the present invention to produce a semiconductor on insulator …
FIG. 7. Prior to or after the contact, the structure (s) comprising the donor semiconductor wafer 120, the exfoliation layer 122, and the glass substrate 102 …
FIG. 8, the donor semiconductor wafer 120 and the glass substrate 102 are then separated, which may include some peeling if they have not already become …
FIGS. 9-11 are block diagrams illustrating intermediate structures formed using processes of the present invention to produce a large area intermediate …
FIGS. 10-11, 15 the single crystal gallium nitride layer 106 may grow through lateral epitaxy in the seams 124 to result in a single, integrated layer 106. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus, comprising: a transparent substrate i nc itdingtin ordez ars surface,a bulkIaverformed from a material selected from the group consisting of glass, glass ceramic, and transparent ceramic s layerj'ornw ie IIof ngCeratffIC tJa.sMn1aSQgoadi sur face; a single crystal silicon layer bonded to thesecond surface of the transparent substrate; and a single crystal gallium nitride layer grown on the single crystal silicon layer, h. iae-ifice.tts~bo ~vr
The apparatus of claim 1, wherein the single crystal silicon layer is of a 1, 1, 1, orientation.
The apparatus of claim 1, wherein the single crystal silicon layer is about 1-100 nm thick.
The apparatus of claim 1, wherein the single crystal silicon layer is formed from separate tiles having seams therebetween in which single crystal gallium nitride has grown.
2.
The apparatus o f clim wiew4 s eesieJmpnevei ecnsiiacXeof tetranggi3gent sysatrae.
7.
A semiconductor on insulator substrate comprising: 2 Attorney Docket No.: SP 0 7-207 a transparent substrate formed of glass or glass ceramic and includes, in order, a first surface, a bulk layer, an enhanced positive ion concentration layer, a reduced positive ion concentration layer tLat is forncdof a nogeramig gas s, a second surface, where the enhanced positive ion concentration layer contains substantially all modifier positive ions from the reduced positive ion concentration layer as a result of ion migration; a single crystal silicon layer irec, bonded to the second surface of the transparent substrate; a conductive or semiconductive oxide layer located between the second surface of the substrate and the single crystal silicon layer; and a single crystal gallium nitride layer on the single crystal silicon layer
The semiconductor on insulator substrate of claim 8, wherein the single crystal silicon layer is directly bonded to the second surface of the transparent substrate.
An LED structure, comprising: a transparent substrate --iiggeir.ordcr:a frstsurgce a bul. Layer formed from a material selected from the group consisting of glass, glass ceramic, and transparent ceramics, a l''er jareg~o~ernggass. aaseodura; a single crystal silicon layer direcfl v bonded to the second uracz,of ta transparent substrate; and a single crystal gallium nitride layer grown on the single crystal silicon layer, wherein the gallium nitride layer includes an n-doped layer and a p-doped layer forming an LED 10.-21.
Layer stacks claimed or described, ordered top of device to substrate.
apparatus/semiconductor-on-insulator structure with GaN
semiconductor on insulator substrate with ion migration layers and oxide interlayer
Materials described outside the worked examples.
transparent substrate
glass
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN growth temperature | ≥ 750 °C | GaN |
single crystal silicon layer thickness (claimed range) | 1–100 nm |
Related documents with shared materials, methods, properties, or citations.
LED structure
glass ceramic
transparent ceramics
aluminum oxynitride
AlON
magnesium aluminate spinel
MgAl₂O₄
yttrium aluminate garnet
polycrystalline alumina
Al₂O₃
CORNING INCORPORATED GLASS COMPOSITION NO. 9664
single crystal silicon layer
Si
single crystal gallium nitride layer
GaN
conductive or semiconductive oxide layer
n-doped gallium nitride layer
GaN:n
p-doped gallium nitride layer
GaN:p
GaInN/GaN multiple quantum well or double heterostructure
GaInN/GaN
transparent substrate thickness | 0.1–10 mm | transparent substrate |
Thickness | 0.5–3 mm | — |
Pressure | 1–50 psi | — |
Thickness | 1–130 nm | — |
Thickness | 300–500 nm | — |
Thickness | ≤ 50 nm | — |
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
LED structure
glass ceramic
transparent ceramics
aluminum oxynitride
AlON
magnesium aluminate spinel
MgAl₂O₄
yttrium aluminate garnet
polycrystalline alumina
Al₂O₃
CORNING INCORPORATED GLASS COMPOSITION NO. 9664
single crystal silicon layer
Si
single crystal gallium nitride layer
GaN
conductive or semiconductive oxide layer
n-doped gallium nitride layer
GaN:n
p-doped gallium nitride layer
GaN:p
GaInN/GaN multiple quantum well or double heterostructure
GaInN/GaN
transparent substrate thickness | 0.1–10 mm | transparent substrate |
Thickness | 0.5–3 mm | — |
Pressure | 1–50 psi | — |
Thickness | 1–130 nm | — |
Thickness | 300–500 nm | — |
Thickness | ≤ 50 nm | — |
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
LED structure
glass ceramic
transparent ceramics
aluminum oxynitride
AlON
magnesium aluminate spinel
MgAl₂O₄
yttrium aluminate garnet
polycrystalline alumina
Al₂O₃
CORNING INCORPORATED GLASS COMPOSITION NO. 9664
single crystal silicon layer
Si
single crystal gallium nitride layer
GaN
conductive or semiconductive oxide layer
n-doped gallium nitride layer
GaN:n
p-doped gallium nitride layer
GaN:p
GaInN/GaN multiple quantum well or double heterostructure
GaInN/GaN
transparent substrate thickness | 0.1–10 mm | transparent substrate |
Thickness | 0.5–3 mm | — |
Pressure | 1–50 psi | — |
Thickness | 1–130 nm | — |
Thickness | 300–500 nm | — |
Thickness | ≤ 50 nm | — |
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
LED structure
glass ceramic
transparent ceramics
aluminum oxynitride
AlON
magnesium aluminate spinel
MgAl₂O₄
yttrium aluminate garnet
polycrystalline alumina
Al₂O₃
CORNING INCORPORATED GLASS COMPOSITION NO. 9664
single crystal silicon layer
Si
single crystal gallium nitride layer
GaN
conductive or semiconductive oxide layer
n-doped gallium nitride layer
GaN:n
p-doped gallium nitride layer
GaN:p
GaInN/GaN multiple quantum well or double heterostructure
GaInN/GaN
transparent substrate thickness | 0.1–10 mm | transparent substrate |
Thickness | 0.5–3 mm | — |
Pressure | 1–50 psi | — |
Thickness | 1–130 nm | — |
Thickness | 300–500 nm | — |
Thickness | ≤ 50 nm | — |