App l. No. 13/300,028 PATENT Am dt. dated Reply to Office Action of Amendments to the Claims: This listing of claims will replace all prior versions, and listings of claims in the application: Listing of Claims: 1.-13. canceled

A I II -nitride semiconductor device comprising: an active region for supporting current flow during operation of the I II -nitride semiconductor device, the active region comprising a I II-nitride epitaxial material; and a field plate region physically adjacent to the active region, the field plate region including: the I II -nitride epitaxial material; SVG 13300028.08-22-2013.HKOIUO₇WPXXIFW3.CLM.1.svg 0.16 5.35 Black and white and a second surface of the I II -nitride epitaxial material, wherein the second surface is angled with respect to the first surface; and a metal coupled to the spin-on dielectric material.

canceled

App l. No. 13/300,028 PATENT Am dt. dated Reply to Office Action of Amendments to the Claims: This listing of claims will replace all prior versions, and listings of claims in the application: Listing of Claims: 1.-13. canceled

A I II -nitride semiconductor device comprising: an active region for supporting current flow during operation of the I II -nitride semiconductor device, the active region comprising a I II-nitride epitaxial material; and a field plate region physically adjacent to the active region, the field plate region including: the I II -nitride epitaxial material; SVG 13300028.08-22-2013.HKOIUO₇WPXXIFW3.CLM.1.svg 0.16 5.35 Black and white and a second surface of the I II -nitride epitaxial material, wherein the second surface is angled with respect to the first surface; and a metal coupled to the spin-on dielectric material.

canceled

App l. No. 13/300,028 PATENT Am dt. dated Reply to Office Action of Amendments to the Claims: This listing of claims will replace all prior versions, and listings of claims in the application: Listing of Claims: 1.-13. canceled

A I II -nitride semiconductor device comprising: an active region for supporting current flow during operation of the I II -nitride semiconductor device, the active region comprising a I II-nitride epitaxial material; and a field plate region physically adjacent to the active region, the field plate region including: the I II -nitride epitaxial material; SVG 13300028.08-22-2013.HKOIUO₇WPXXIFW3.CLM.1.svg 0.16 5.35 Black and white and a second surface of the I II -nitride epitaxial material, wherein the second surface is angled with respect to the first surface; and a metal coupled to the spin-on dielectric material.

canceled

App l. No. 13/300,028 PATENT Am dt. dated Reply to Office Action of Amendments to the Claims: This listing of claims will replace all prior versions, and listings of claims in the application: Listing of Claims: 1.-13. canceled

A I II -nitride semiconductor device comprising: an active region for supporting current flow during operation of the I II -nitride semiconductor device, the active region comprising a I II-nitride epitaxial material; and a field plate region physically adjacent to the active region, the field plate region including: the I II -nitride epitaxial material; SVG 13300028.08-22-2013.HKOIUO₇WPXXIFW3.CLM.1.svg 0.16 5.35 Black and white and a second surface of the I II -nitride epitaxial material, wherein the second surface is angled with respect to the first surface; and a metal coupled to the spin-on dielectric material.

canceled