High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy

Yukari Ishiakwa; Ryo Hattori; Yongzhao Yao; Daiki Katsube; Koji Sato

doi:10.35848/1882-0786/ae5f58

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Research paper

Experimental Characterization

High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy

Yukari Ishiakwa, Ryo Hattori, Yongzhao Yao, Daiki Katsube et al.

Applied Physics Express·2026·10.35848/1882-0786/ae5f58·arXiv:2511.08989

High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy | Matter42 Literature

High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy

High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy

High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy

High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy

High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy

High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy

High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy

High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy

Samples

Chip cut from a 2-inch hydride vapor phase epitaxy (HVPE)-grown (0001) GaN wafer; both surfaces chemically and mechanically polished before PCM and MPPL observation.

The same GaN chip after molten KOH+NaOH etching to reveal etch pits at threading-dislocation emergence points.

Site-specific FIB microsampling specimen containing the core of an etch pit for TEM analysis.

Why these are connected

Samples

Chip cut from a 2-inch hydride vapor phase epitaxy (HVPE)-grown (0001) GaN wafer; both surfaces chemically and mechanically polished before PCM and MPPL observation.

The same GaN chip after molten KOH+NaOH etching to reveal etch pits at threading-dislocation emergence points.

Site-specific FIB microsampling specimen containing the core of an etch pit for TEM analysis.

Why these are connected

Samples

Chip cut from a 2-inch hydride vapor phase epitaxy (HVPE)-grown (0001) GaN wafer; both surfaces chemically and mechanically polished before PCM and MPPL observation.

The same GaN chip after molten KOH+NaOH etching to reveal etch pits at threading-dislocation emergence points.

Site-specific FIB microsampling specimen containing the core of an etch pit for TEM analysis.

Why these are connected

Samples

Chip cut from a 2-inch hydride vapor phase epitaxy (HVPE)-grown (0001) GaN wafer; both surfaces chemically and mechanically polished before PCM and MPPL observation.

The same GaN chip after molten KOH+NaOH etching to reveal etch pits at threading-dislocation emergence points.

Site-specific FIB microsampling specimen containing the core of an etch pit for TEM analysis.

Why these are connected