Waveguide-coupled light emitting devices made of 2D materials

Ronja Khelifa; Shengyu Shan; Takashi Taniguchi; Kenji Watanabe; Lukas Novotny

doi:10.48550/arxiv.2211.12255

Paper details

Research paper

Experimental CharacterizationComputational Multiscale

Waveguide-coupled light emitting devices made of 2D materials

Ronja Khelifa, Shengyu Shan, Takashi Taniguchi, Kenji Watanabe et al.

2022·10.48550/arxiv.2211.12255·arXiv:2211.12255

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Unpatterned vdW LED stack consisting of monolayer WSe₂ sandwiched between two 4±1-layer h-BN tunnel barriers and two monolayer graphene electrodes, electrically contacted by Cr/Au edge contacts, on a glass substrate.

2 preparations5 characterizations4 properties6 figures

ExperimentalCStudied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCrCapping Or ContactAuCapping Or ContactglassSubstrate / Dielectric

Patterned waveguide-coupled device derived from the same vdW LED stack, linearly tapered and etched into an h-BN photonic waveguide structure on glass.

4 preparations5 characterizations5 properties6 figures

ExperimentalCStudied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCrCapping Or ContactAuCapping Or ContactglassSubstrate / Dielectric

Materials

Graphene

Studied Material

Also known as

studied material

WSe₂

Studied Material

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Waveguide-coupled light emitting devices made of 2D materials | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	top h-BN thickness	130nm	BN	Patterned waveguide-coupled device derived from the same vdW	—
Substrate Thickness	bottom h-BN thickness	105nm	BN	Patterned waveguide-coupled device derived from the same vdW	—
Layer Count	h-BN barrier layers	4	BN	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw Patterned waveguide-coupled device derived from the same vdW	—
Contact Resistance	TLM contact resistance	200-300ohm*um	C Cr Au	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw Patterned waveguide-coupled device derived from the same vdW	—
External Quantum Efficiency	maximum external quantum efficiency	4%	WSe₂	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw	—
Bias Voltage	applied bias voltage	1.7V	C WSe₂ BN Cr Au	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw Patterned waveguide-coupled device derived from the same vdW	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	top h-BN thickness	130nm	BN	Patterned waveguide-coupled device derived from the same vdW	—
Substrate Thickness	bottom h-BN thickness	105nm	BN	Patterned waveguide-coupled device derived from the same vdW	—
Layer Count	h-BN barrier layers	4	BN	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw Patterned waveguide-coupled device derived from the same vdW	—
Contact Resistance	TLM contact resistance	200-300ohm*um	C Cr Au	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw Patterned waveguide-coupled device derived from the same vdW	—
External Quantum Efficiency	maximum external quantum efficiency	4%	WSe₂	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw	—
Bias Voltage	applied bias voltage	1.7V	C WSe₂ BN Cr Au	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw Patterned waveguide-coupled device derived from the same vdW	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	top h-BN thickness	130nm	BN	Patterned waveguide-coupled device derived from the same vdW	—
Substrate Thickness	bottom h-BN thickness	105nm	BN	Patterned waveguide-coupled device derived from the same vdW	—
Layer Count	h-BN barrier layers	4	BN	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw Patterned waveguide-coupled device derived from the same vdW	—
Contact Resistance	TLM contact resistance	200-300ohm*um	C Cr Au	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw Patterned waveguide-coupled device derived from the same vdW	—
External Quantum Efficiency	maximum external quantum efficiency	4%	WSe₂	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw	—
Bias Voltage	applied bias voltage	1.7V	C WSe₂ BN Cr Au	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw Patterned waveguide-coupled device derived from the same vdW	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	top h-BN thickness	130nm	BN	Patterned waveguide-coupled device derived from the same vdW	—
Substrate Thickness	bottom h-BN thickness	105nm	BN	Patterned waveguide-coupled device derived from the same vdW	—
Layer Count	h-BN barrier layers	4	BN	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw Patterned waveguide-coupled device derived from the same vdW	—
Contact Resistance	TLM contact resistance	200-300ohm*um	C Cr Au	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw Patterned waveguide-coupled device derived from the same vdW	—
External Quantum Efficiency	maximum external quantum efficiency	4%	WSe₂	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw	—
Bias Voltage	applied bias voltage	1.7V	C WSe₂ BN Cr Au	Unpatterned vdW LED stack consisting of monolayer WSe₂ sandw Patterned waveguide-coupled device derived from the same vdW	—

Waveguide-coupled light emitting devices made of 2D materials

Samples

Unpatterned vdW LED stack consisting of monolayer WSe₂ sandwiched between two 4±1-layer h-BN tunnel barriers and two monolayer graphene electrodes, electrically contacted by Cr/Au edge contacts, on a glass substrate.

Patterned waveguide-coupled device derived from the same vdW LED stack, linearly tapered and etched into an h-BN photonic waveguide structure on glass.

Materials

Why these are connected

Waveguide-coupled light emitting devices made of 2D materials

Samples

Unpatterned vdW LED stack consisting of monolayer WSe₂ sandwiched between two 4±1-layer h-BN tunnel barriers and two monolayer graphene electrodes, electrically contacted by Cr/Au edge contacts, on a glass substrate.

Patterned waveguide-coupled device derived from the same vdW LED stack, linearly tapered and etched into an h-BN photonic waveguide structure on glass.

Materials

Why these are connected

Waveguide-coupled light emitting devices made of 2D materials

Samples

Unpatterned vdW LED stack consisting of monolayer WSe₂ sandwiched between two 4±1-layer h-BN tunnel barriers and two monolayer graphene electrodes, electrically contacted by Cr/Au edge contacts, on a glass substrate.

Patterned waveguide-coupled device derived from the same vdW LED stack, linearly tapered and etched into an h-BN photonic waveguide structure on glass.

Materials

Why these are connected

Waveguide-coupled light emitting devices made of 2D materials

Samples

Unpatterned vdW LED stack consisting of monolayer WSe₂ sandwiched between two 4±1-layer h-BN tunnel barriers and two monolayer graphene electrodes, electrically contacted by Cr/Au edge contacts, on a glass substrate.

Patterned waveguide-coupled device derived from the same vdW LED stack, linearly tapered and etched into an h-BN photonic waveguide structure on glass.

Materials

Why these are connected

Waveguide-coupled light emitting devices made of 2D materials

Samples

Unpatterned vdW LED stack consisting of monolayer WSe₂ sandwiched between two 4±1-layer h-BN tunnel barriers and two monolayer graphene electrodes, electrically contacted by Cr/Au edge contacts, on a glass substrate.

Patterned waveguide-coupled device derived from the same vdW LED stack, linearly tapered and etched into an h-BN photonic waveguide structure on glass.

Materials

Why these are connected

Waveguide-coupled light emitting devices made of 2D materials

Samples

Unpatterned vdW LED stack consisting of monolayer WSe₂ sandwiched between two 4±1-layer h-BN tunnel barriers and two monolayer graphene electrodes, electrically contacted by Cr/Au edge contacts, on a glass substrate.

Patterned waveguide-coupled device derived from the same vdW LED stack, linearly tapered and etched into an h-BN photonic waveguide structure on glass.

Materials

Why these are connected

Waveguide-coupled light emitting devices made of 2D materials

Samples

Unpatterned vdW LED stack consisting of monolayer WSe₂ sandwiched between two 4±1-layer h-BN tunnel barriers and two monolayer graphene electrodes, electrically contacted by Cr/Au edge contacts, on a glass substrate.

Patterned waveguide-coupled device derived from the same vdW LED stack, linearly tapered and etched into an h-BN photonic waveguide structure on glass.

Materials

Why these are connected

Waveguide-coupled light emitting devices made of 2D materials

Samples

Unpatterned vdW LED stack consisting of monolayer WSe₂ sandwiched between two 4±1-layer h-BN tunnel barriers and two monolayer graphene electrodes, electrically contacted by Cr/Au edge contacts, on a glass substrate.

Patterned waveguide-coupled device derived from the same vdW LED stack, linearly tapered and etched into an h-BN photonic waveguide structure on glass.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations