Patent
US 10,811,559METHOD FOR MANUFACTURING INDIUM GALLIUM NITRIDE/GALLIUM NITRIDE QUANTUM-WELL PYRAMID
I-Kai Lo
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,811,559Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a text flowchart illustrating an embodiment of a method according to the present invention. [0023]
FIG. 2 is a graphic flowchart illustrating the embodiment of the method according to the present invention. [0024]
FIG. 3 is a longitudinal sectional view of an indium gallium nitride/gallium nitride quantum-well pyramid made by the embodiment of the method according to the …
FIG. 4a is a scanning electron microscopy image of a plurality of indium gallium nitride/gallium nitride quantum-well pyramid samples made by the embodiment of …
FIG. 5 is a photoluminescence spectrum of the sample shown in
FIG. 6 is a cathodoluminescence spectrum of the sample shown in
FIG. 7b is a cathodoluminescence image of the sample shown in
FIG. 8d is a magnified transmission electron microscopy image of a region DP O 1 as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid, comprising: performing a first gallium nitride epitaxial reaction and then a second gallium nitride epitaxial reaction on a substrate under 600-650 0 C to form a gallium nitride pyramid, wherein a flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, wherein a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1; growing a first indium gallium nitride layer on an end face of the gallium nitride pyramid, wherein the end face is away from the substrate; and growing a first gallium nitride layer on the first indium gallium nitride layer. Currently amended
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1, wherein the substrate is a LiAl O 2 substrate, a LiGa O 2 substrate or a ZnO substrate. Original
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1, wherein a gallium wetting layer is formed on the substrate, and wherein the first gallium nitride epitaxial reaction is performed on the gallium wetting layer. Currently amended
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1, wherein the first gallium nitride epitaxial reaction and the second gallium nitride epitaxial reaction is performed under 630 0 C, wherein the flux ratio of nitrogen to gallium of the first epitaxial reaction is 29:1, and wherein the flux ratio of nitrogen to gallium of the second epitaxial reaction is 138.8:1. Currently amended
A method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid, comprising: forming a gallium nitride pyramid on a substrate, by sequentially performing a first gallium nitride epitaxial reaction and a second gallium nitride epitaxial reaction on a substrate under 600-650 0 C, wherein the gallium nitride pyramid has an end face away from the substrate, wherein a flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, wherein a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1; growing a first indium gallium nitride layer on the end face of the gallium nitride pyramid, by performing a indium gallium nitride epitaxial reaction under 780 0 C for 1.5 minutes with a flux ratio of indium to gallium to nitrogen being 1.55:1:165.09 forming a gallium nitride cap la y er on the indium gallium nitride la y er, by performing a third gallium nitride epitaxial reaction under 780 0 C for 30 seconds with a flux ratio of nitrogen to gallium being 165.09:1; and forming a gallium nitride barrier layer on the gallium nitride cap layer, by performing a fourth gallium nitride epitaxial reaction under 780 0 C for 10 minutes with a flux ratio of nitrogen to gallium being 70.39:1. Currently amended
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7, wherein the substrate is a LiA lO 2 substrate, a LiGa O 2 substrate or a ZnO substrate. New
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7, wherein a gallium wetting layer is formed on the substrate, and wherein the first gallium nitride epitaxial reaction is performed on the gallium wetting layer. New
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7, wherein the first gallium nitride epitaxial reaction and the second gallium nitride epitaxial reaction is performed under 630 0 C, wherein the flux ratio of nitrogen to gallium of the first epitaxial reaction is 29:1, and wherein the flux ratio of nitrogen to gallium of the second epitaxial reaction is 138.8:1. New
Layer stacks claimed or described, ordered top of device to substrate.
InGaN/GaN quantum-well pyramid
Materials described outside the worked examples.
gallium nitride
GaN
indium gallium nitride
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4a is a scanning electron microscopy image of a plurality of indium gallium nitride/gallium nitride quantum-well pyramid samples made by the embodiment of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–650 °C | — |
— |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,811,559Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a text flowchart illustrating an embodiment of a method according to the present invention. [0023]
FIG. 2 is a graphic flowchart illustrating the embodiment of the method according to the present invention. [0024]
FIG. 3 is a longitudinal sectional view of an indium gallium nitride/gallium nitride quantum-well pyramid made by the embodiment of the method according to the …
FIG. 4a is a scanning electron microscopy image of a plurality of indium gallium nitride/gallium nitride quantum-well pyramid samples made by the embodiment of …
FIG. 5 is a photoluminescence spectrum of the sample shown in
FIG. 6 is a cathodoluminescence spectrum of the sample shown in
FIG. 7b is a cathodoluminescence image of the sample shown in
FIG. 8d is a magnified transmission electron microscopy image of a region DP O 1 as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid, comprising: performing a first gallium nitride epitaxial reaction and then a second gallium nitride epitaxial reaction on a substrate under 600-650 0 C to form a gallium nitride pyramid, wherein a flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, wherein a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1; growing a first indium gallium nitride layer on an end face of the gallium nitride pyramid, wherein the end face is away from the substrate; and growing a first gallium nitride layer on the first indium gallium nitride layer. Currently amended
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1, wherein the substrate is a LiAl O 2 substrate, a LiGa O 2 substrate or a ZnO substrate. Original
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1, wherein a gallium wetting layer is formed on the substrate, and wherein the first gallium nitride epitaxial reaction is performed on the gallium wetting layer. Currently amended
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1, wherein the first gallium nitride epitaxial reaction and the second gallium nitride epitaxial reaction is performed under 630 0 C, wherein the flux ratio of nitrogen to gallium of the first epitaxial reaction is 29:1, and wherein the flux ratio of nitrogen to gallium of the second epitaxial reaction is 138.8:1. Currently amended
A method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid, comprising: forming a gallium nitride pyramid on a substrate, by sequentially performing a first gallium nitride epitaxial reaction and a second gallium nitride epitaxial reaction on a substrate under 600-650 0 C, wherein the gallium nitride pyramid has an end face away from the substrate, wherein a flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, wherein a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1; growing a first indium gallium nitride layer on the end face of the gallium nitride pyramid, by performing a indium gallium nitride epitaxial reaction under 780 0 C for 1.5 minutes with a flux ratio of indium to gallium to nitrogen being 1.55:1:165.09 forming a gallium nitride cap la y er on the indium gallium nitride la y er, by performing a third gallium nitride epitaxial reaction under 780 0 C for 30 seconds with a flux ratio of nitrogen to gallium being 165.09:1; and forming a gallium nitride barrier layer on the gallium nitride cap layer, by performing a fourth gallium nitride epitaxial reaction under 780 0 C for 10 minutes with a flux ratio of nitrogen to gallium being 70.39:1. Currently amended
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7, wherein the substrate is a LiA lO 2 substrate, a LiGa O 2 substrate or a ZnO substrate. New
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7, wherein a gallium wetting layer is formed on the substrate, and wherein the first gallium nitride epitaxial reaction is performed on the gallium wetting layer. New
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7, wherein the first gallium nitride epitaxial reaction and the second gallium nitride epitaxial reaction is performed under 630 0 C, wherein the flux ratio of nitrogen to gallium of the first epitaxial reaction is 29:1, and wherein the flux ratio of nitrogen to gallium of the second epitaxial reaction is 138.8:1. New
Layer stacks claimed or described, ordered top of device to substrate.
InGaN/GaN quantum-well pyramid
Materials described outside the worked examples.
gallium nitride
GaN
indium gallium nitride
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4a is a scanning electron microscopy image of a plurality of indium gallium nitride/gallium nitride quantum-well pyramid samples made by the embodiment of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–650 °C | — |
— |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,811,559Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a text flowchart illustrating an embodiment of a method according to the present invention. [0023]
FIG. 2 is a graphic flowchart illustrating the embodiment of the method according to the present invention. [0024]
FIG. 3 is a longitudinal sectional view of an indium gallium nitride/gallium nitride quantum-well pyramid made by the embodiment of the method according to the …
FIG. 4a is a scanning electron microscopy image of a plurality of indium gallium nitride/gallium nitride quantum-well pyramid samples made by the embodiment of …
FIG. 5 is a photoluminescence spectrum of the sample shown in
FIG. 6 is a cathodoluminescence spectrum of the sample shown in
FIG. 7b is a cathodoluminescence image of the sample shown in
FIG. 8d is a magnified transmission electron microscopy image of a region DP O 1 as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid, comprising: performing a first gallium nitride epitaxial reaction and then a second gallium nitride epitaxial reaction on a substrate under 600-650 0 C to form a gallium nitride pyramid, wherein a flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, wherein a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1; growing a first indium gallium nitride layer on an end face of the gallium nitride pyramid, wherein the end face is away from the substrate; and growing a first gallium nitride layer on the first indium gallium nitride layer. Currently amended
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1, wherein the substrate is a LiAl O 2 substrate, a LiGa O 2 substrate or a ZnO substrate. Original
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1, wherein a gallium wetting layer is formed on the substrate, and wherein the first gallium nitride epitaxial reaction is performed on the gallium wetting layer. Currently amended
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1, wherein the first gallium nitride epitaxial reaction and the second gallium nitride epitaxial reaction is performed under 630 0 C, wherein the flux ratio of nitrogen to gallium of the first epitaxial reaction is 29:1, and wherein the flux ratio of nitrogen to gallium of the second epitaxial reaction is 138.8:1. Currently amended
A method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid, comprising: forming a gallium nitride pyramid on a substrate, by sequentially performing a first gallium nitride epitaxial reaction and a second gallium nitride epitaxial reaction on a substrate under 600-650 0 C, wherein the gallium nitride pyramid has an end face away from the substrate, wherein a flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, wherein a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1; growing a first indium gallium nitride layer on the end face of the gallium nitride pyramid, by performing a indium gallium nitride epitaxial reaction under 780 0 C for 1.5 minutes with a flux ratio of indium to gallium to nitrogen being 1.55:1:165.09 forming a gallium nitride cap la y er on the indium gallium nitride la y er, by performing a third gallium nitride epitaxial reaction under 780 0 C for 30 seconds with a flux ratio of nitrogen to gallium being 165.09:1; and forming a gallium nitride barrier layer on the gallium nitride cap layer, by performing a fourth gallium nitride epitaxial reaction under 780 0 C for 10 minutes with a flux ratio of nitrogen to gallium being 70.39:1. Currently amended
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7, wherein the substrate is a LiA lO 2 substrate, a LiGa O 2 substrate or a ZnO substrate. New
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7, wherein a gallium wetting layer is formed on the substrate, and wherein the first gallium nitride epitaxial reaction is performed on the gallium wetting layer. New
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7, wherein the first gallium nitride epitaxial reaction and the second gallium nitride epitaxial reaction is performed under 630 0 C, wherein the flux ratio of nitrogen to gallium of the first epitaxial reaction is 29:1, and wherein the flux ratio of nitrogen to gallium of the second epitaxial reaction is 138.8:1. New
Layer stacks claimed or described, ordered top of device to substrate.
InGaN/GaN quantum-well pyramid
Materials described outside the worked examples.
gallium nitride
GaN
indium gallium nitride
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4a is a scanning electron microscopy image of a plurality of indium gallium nitride/gallium nitride quantum-well pyramid samples made by the embodiment of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–650 °C | — |
— |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,811,559Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a text flowchart illustrating an embodiment of a method according to the present invention. [0023]
FIG. 2 is a graphic flowchart illustrating the embodiment of the method according to the present invention. [0024]
FIG. 3 is a longitudinal sectional view of an indium gallium nitride/gallium nitride quantum-well pyramid made by the embodiment of the method according to the …
FIG. 4a is a scanning electron microscopy image of a plurality of indium gallium nitride/gallium nitride quantum-well pyramid samples made by the embodiment of …
FIG. 5 is a photoluminescence spectrum of the sample shown in
FIG. 6 is a cathodoluminescence spectrum of the sample shown in
FIG. 7b is a cathodoluminescence image of the sample shown in
FIG. 8d is a magnified transmission electron microscopy image of a region DP O 1 as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid, comprising: performing a first gallium nitride epitaxial reaction and then a second gallium nitride epitaxial reaction on a substrate under 600-650 0 C to form a gallium nitride pyramid, wherein a flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, wherein a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1; growing a first indium gallium nitride layer on an end face of the gallium nitride pyramid, wherein the end face is away from the substrate; and growing a first gallium nitride layer on the first indium gallium nitride layer. Currently amended
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1, wherein the substrate is a LiAl O 2 substrate, a LiGa O 2 substrate or a ZnO substrate. Original
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1, wherein a gallium wetting layer is formed on the substrate, and wherein the first gallium nitride epitaxial reaction is performed on the gallium wetting layer. Currently amended
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 1, wherein the first gallium nitride epitaxial reaction and the second gallium nitride epitaxial reaction is performed under 630 0 C, wherein the flux ratio of nitrogen to gallium of the first epitaxial reaction is 29:1, and wherein the flux ratio of nitrogen to gallium of the second epitaxial reaction is 138.8:1. Currently amended
A method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid, comprising: forming a gallium nitride pyramid on a substrate, by sequentially performing a first gallium nitride epitaxial reaction and a second gallium nitride epitaxial reaction on a substrate under 600-650 0 C, wherein the gallium nitride pyramid has an end face away from the substrate, wherein a flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, wherein a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1; growing a first indium gallium nitride layer on the end face of the gallium nitride pyramid, by performing a indium gallium nitride epitaxial reaction under 780 0 C for 1.5 minutes with a flux ratio of indium to gallium to nitrogen being 1.55:1:165.09 forming a gallium nitride cap la y er on the indium gallium nitride la y er, by performing a third gallium nitride epitaxial reaction under 780 0 C for 30 seconds with a flux ratio of nitrogen to gallium being 165.09:1; and forming a gallium nitride barrier layer on the gallium nitride cap layer, by performing a fourth gallium nitride epitaxial reaction under 780 0 C for 10 minutes with a flux ratio of nitrogen to gallium being 70.39:1. Currently amended
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7, wherein the substrate is a LiA lO 2 substrate, a LiGa O 2 substrate or a ZnO substrate. New
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7, wherein a gallium wetting layer is formed on the substrate, and wherein the first gallium nitride epitaxial reaction is performed on the gallium wetting layer. New
The method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid as claimed in claim 7, wherein the first gallium nitride epitaxial reaction and the second gallium nitride epitaxial reaction is performed under 630 0 C, wherein the flux ratio of nitrogen to gallium of the first epitaxial reaction is 29:1, and wherein the flux ratio of nitrogen to gallium of the second epitaxial reaction is 138.8:1. New
Layer stacks claimed or described, ordered top of device to substrate.
InGaN/GaN quantum-well pyramid
Materials described outside the worked examples.
gallium nitride
GaN
indium gallium nitride
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4a is a scanning electron microscopy image of a plurality of indium gallium nitride/gallium nitride quantum-well pyramid samples made by the embodiment of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–650 °C | — |
— |
Related documents with shared materials, methods, properties, or citations.
lithium aluminate
LiAlO₂
lithium gallate
LiGaO₂
zinc oxide
ZnO
gallium wetting layer
Ga
indium wetting layer
In
FIG. 5 is a photoluminescence spectrum of the sample shown in
FIG. 8d is a magnified transmission electron microscopy image of a region DP O 1 as shown in
| 3.359–3.412 eV |
| — |
Temperature | ≤ 630 °C | — |
Temperature | ≤ 780 °C | — |
Temperature | ≤ 10 K | — |
lithium aluminate
LiAlO₂
lithium gallate
LiGaO₂
zinc oxide
ZnO
gallium wetting layer
Ga
indium wetting layer
In
FIG. 5 is a photoluminescence spectrum of the sample shown in
FIG. 8d is a magnified transmission electron microscopy image of a region DP O 1 as shown in
| 3.359–3.412 eV |
| — |
Temperature | ≤ 630 °C | — |
Temperature | ≤ 780 °C | — |
Temperature | ≤ 10 K | — |
lithium aluminate
LiAlO₂
lithium gallate
LiGaO₂
zinc oxide
ZnO
gallium wetting layer
Ga
indium wetting layer
In
FIG. 5 is a photoluminescence spectrum of the sample shown in
FIG. 8d is a magnified transmission electron microscopy image of a region DP O 1 as shown in
| 3.359–3.412 eV |
| — |
Temperature | ≤ 630 °C | — |
Temperature | ≤ 780 °C | — |
Temperature | ≤ 10 K | — |
lithium aluminate
LiAlO₂
lithium gallate
LiGaO₂
zinc oxide
ZnO
gallium wetting layer
Ga
indium wetting layer
In
FIG. 5 is a photoluminescence spectrum of the sample shown in
FIG. 8d is a magnified transmission electron microscopy image of a region DP O 1 as shown in
| 3.359–3.412 eV |
| — |
Temperature | ≤ 630 °C | — |
Temperature | ≤ 780 °C | — |
Temperature | ≤ 10 K | — |