A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; forming a wall on the epitaxy near a drain of the FET, the wall comprising a first negative tone electron-beam resist; depositing a dielectric over the epitaxy and the wall, the wall causing the dielectric to have a step near the drain of the FET; depositing a second negative tone electron-beam resist over the dielectric, wherein surface tension causes the deposited second negative tone electron-beam resist to have a slanted top surface between the step and a source of the FET; etching anisotropically vertically the second negative tone electron-beam resist and the dielectric to remove the second negative tone electron-beam resist and to transfer a shape of the slanted top surface to the dielectric between the step and the source of the FET; and forming a gatehead comprising metal on the dielectric between the step and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; depositing first dielectric on the epitaxy by plasma- enhanced chemical vapor deposition (PECVD), the first dielectric having a thickness corresponding to a desired maximum slant height; depositing a second dielectric on the first dielectric to form a wall near a drain of the FET; depositing a negative tone electron-beam resist on the first and the second dielectric, wherein surface tension causes the deposited negative tone electron-beam resist to have a slanted top surface between the wall and a source of the FET; etching anisotropically vertically the negative tone electron-beam resist, the first dielectric and the second 22 dielectric to remove the negative tone electron-beam resist and to transfer a shape of the slanted top surface to the first dielectric between the wall and the source of the FET; and forming a gatehead comprising metal on the dielectric between the wall and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; 23 depositing a first dielectric on the epitaxy; forming first negative tone electron-beam resist on the first dielectric near a source of the FET; depositing second dielectric over the first dielectric and the first negative tone electron-beam resist; planarizing the second dielectric and the first negative tone electron-beam resist using chemical-mechanical polishing (CMP); forming second negative tone electron-beam resist on the over the first negative tone electron-beam resist and the second dielectric near a source of the FET, the second negative tone electron-beam resist having a longer lateral length than the first negative tone electron-beam resist; depositing third dielectric over the second dielectric and the second negative tone electron-beam resist; planarizing the third dielectric and the second negative tone electron-beam resist using chemical-mechanical polishing (CMP); removing the first negative tone electron-beam resist and the second negative tone electron-beam resist by wet etching, wherein the second dielectric forms a first step from the first dielectric, and the third dielectric forms a second step from the second dielectric; depositing third negative tone electron-beam resist over the first, second and third dielectric, wherein surface tension causes the deposited third negative tone electron- beam resist to have a slanted top surface between the first step and a source of the FET, and between the second step and the first step; etching anisotropically vertically the third negative tone electron-beam resist and the first, second and third dielectric to remove the third negative tone electron-beam 24 resist and to transfer a shape of the slanted top surface to the first, second and third dielectric between the second step and the source of the FET; and forming a gatehead comprising metal on the first, second and third dielectric between the second step and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; depositing a dielectric on the epitaxy; forming a first negative tone electron-beam resist on the dielectric near a drain of the FET to form a first step; depositing second negative tone electron-beam resist dielectric over the first negative tone electron-beam resist and near a drain of the FET to form a second step, the second negative tone electron-beam resist having a lateral length less than the first negative tone electron-beam resist; depositing third negative tone electron-beam resist over the first and second negative tone electron-beam resist, wherein surface tension causes the deposited third negative tone electron-beam resist to have a slanted top surface between the first step and a source of the FET, and between the second step and the first step; etching anisotropically vertically the first, second and third negative tone electron-beam resist to remove the first, second and third negative tone electron-beam resist and to transfer a shape of the slanted top surface to the dielectric between the second step and the source of the FET; and forming a gatehead comprising metal on the dielectric between the second step and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; forming a wall on the epitaxy near a drain of the FET, the wall comprising a first negative tone electron-beam resist; depositing a dielectric over the epitaxy and the wall, the wall causing the dielectric to have a step near the drain of the FET; depositing a second negative tone electron-beam resist over the dielectric, wherein surface tension causes the deposited second negative tone electron-beam resist to have a slanted top surface between the step and a source of the FET; etching anisotropically vertically the second negative tone electron-beam resist and the dielectric to remove the second negative tone electron-beam resist and to transfer a shape of the slanted top surface to the dielectric between the step and the source of the FET; and forming a gatehead comprising metal on the dielectric between the step and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; depositing first dielectric on the epitaxy by plasma- enhanced chemical vapor deposition (PECVD), the first dielectric having a thickness corresponding to a desired maximum slant height; depositing a second dielectric on the first dielectric to form a wall near a drain of the FET; depositing a negative tone electron-beam resist on the first and the second dielectric, wherein surface tension causes the deposited negative tone electron-beam resist to have a slanted top surface between the wall and a source of the FET; etching anisotropically vertically the negative tone electron-beam resist, the first dielectric and the second 22 dielectric to remove the negative tone electron-beam resist and to transfer a shape of the slanted top surface to the first dielectric between the wall and the source of the FET; and forming a gatehead comprising metal on the dielectric between the wall and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; 23 depositing a first dielectric on the epitaxy; forming first negative tone electron-beam resist on the first dielectric near a source of the FET; depositing second dielectric over the first dielectric and the first negative tone electron-beam resist; planarizing the second dielectric and the first negative tone electron-beam resist using chemical-mechanical polishing (CMP); forming second negative tone electron-beam resist on the over the first negative tone electron-beam resist and the second dielectric near a source of the FET, the second negative tone electron-beam resist having a longer lateral length than the first negative tone electron-beam resist; depositing third dielectric over the second dielectric and the second negative tone electron-beam resist; planarizing the third dielectric and the second negative tone electron-beam resist using chemical-mechanical polishing (CMP); removing the first negative tone electron-beam resist and the second negative tone electron-beam resist by wet etching, wherein the second dielectric forms a first step from the first dielectric, and the third dielectric forms a second step from the second dielectric; depositing third negative tone electron-beam resist over the first, second and third dielectric, wherein surface tension causes the deposited third negative tone electron- beam resist to have a slanted top surface between the first step and a source of the FET, and between the second step and the first step; etching anisotropically vertically the third negative tone electron-beam resist and the first, second and third dielectric to remove the third negative tone electron-beam 24 resist and to transfer a shape of the slanted top surface to the first, second and third dielectric between the second step and the source of the FET; and forming a gatehead comprising metal on the first, second and third dielectric between the second step and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; depositing a dielectric on the epitaxy; forming a first negative tone electron-beam resist on the dielectric near a drain of the FET to form a first step; depositing second negative tone electron-beam resist dielectric over the first negative tone electron-beam resist and near a drain of the FET to form a second step, the second negative tone electron-beam resist having a lateral length less than the first negative tone electron-beam resist; depositing third negative tone electron-beam resist over the first and second negative tone electron-beam resist, wherein surface tension causes the deposited third negative tone electron-beam resist to have a slanted top surface between the first step and a source of the FET, and between the second step and the first step; etching anisotropically vertically the first, second and third negative tone electron-beam resist to remove the first, second and third negative tone electron-beam resist and to transfer a shape of the slanted top surface to the dielectric between the second step and the source of the FET; and forming a gatehead comprising metal on the dielectric between the second step and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; forming a wall on the epitaxy near a drain of the FET, the wall comprising a first negative tone electron-beam resist; depositing a dielectric over the epitaxy and the wall, the wall causing the dielectric to have a step near the drain of the FET; depositing a second negative tone electron-beam resist over the dielectric, wherein surface tension causes the deposited second negative tone electron-beam resist to have a slanted top surface between the step and a source of the FET; etching anisotropically vertically the second negative tone electron-beam resist and the dielectric to remove the second negative tone electron-beam resist and to transfer a shape of the slanted top surface to the dielectric between the step and the source of the FET; and forming a gatehead comprising metal on the dielectric between the step and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; depositing first dielectric on the epitaxy by plasma- enhanced chemical vapor deposition (PECVD), the first dielectric having a thickness corresponding to a desired maximum slant height; depositing a second dielectric on the first dielectric to form a wall near a drain of the FET; depositing a negative tone electron-beam resist on the first and the second dielectric, wherein surface tension causes the deposited negative tone electron-beam resist to have a slanted top surface between the wall and a source of the FET; etching anisotropically vertically the negative tone electron-beam resist, the first dielectric and the second 22 dielectric to remove the negative tone electron-beam resist and to transfer a shape of the slanted top surface to the first dielectric between the wall and the source of the FET; and forming a gatehead comprising metal on the dielectric between the wall and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; 23 depositing a first dielectric on the epitaxy; forming first negative tone electron-beam resist on the first dielectric near a source of the FET; depositing second dielectric over the first dielectric and the first negative tone electron-beam resist; planarizing the second dielectric and the first negative tone electron-beam resist using chemical-mechanical polishing (CMP); forming second negative tone electron-beam resist on the over the first negative tone electron-beam resist and the second dielectric near a source of the FET, the second negative tone electron-beam resist having a longer lateral length than the first negative tone electron-beam resist; depositing third dielectric over the second dielectric and the second negative tone electron-beam resist; planarizing the third dielectric and the second negative tone electron-beam resist using chemical-mechanical polishing (CMP); removing the first negative tone electron-beam resist and the second negative tone electron-beam resist by wet etching, wherein the second dielectric forms a first step from the first dielectric, and the third dielectric forms a second step from the second dielectric; depositing third negative tone electron-beam resist over the first, second and third dielectric, wherein surface tension causes the deposited third negative tone electron- beam resist to have a slanted top surface between the first step and a source of the FET, and between the second step and the first step; etching anisotropically vertically the third negative tone electron-beam resist and the first, second and third dielectric to remove the third negative tone electron-beam 24 resist and to transfer a shape of the slanted top surface to the first, second and third dielectric between the second step and the source of the FET; and forming a gatehead comprising metal on the first, second and third dielectric between the second step and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; depositing a dielectric on the epitaxy; forming a first negative tone electron-beam resist on the dielectric near a drain of the FET to form a first step; depositing second negative tone electron-beam resist dielectric over the first negative tone electron-beam resist and near a drain of the FET to form a second step, the second negative tone electron-beam resist having a lateral length less than the first negative tone electron-beam resist; depositing third negative tone electron-beam resist over the first and second negative tone electron-beam resist, wherein surface tension causes the deposited third negative tone electron-beam resist to have a slanted top surface between the first step and a source of the FET, and between the second step and the first step; etching anisotropically vertically the first, second and third negative tone electron-beam resist to remove the first, second and third negative tone electron-beam resist and to transfer a shape of the slanted top surface to the dielectric between the second step and the source of the FET; and forming a gatehead comprising metal on the dielectric between the second step and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; forming a wall on the epitaxy near a drain of the FET, the wall comprising a first negative tone electron-beam resist; depositing a dielectric over the epitaxy and the wall, the wall causing the dielectric to have a step near the drain of the FET; depositing a second negative tone electron-beam resist over the dielectric, wherein surface tension causes the deposited second negative tone electron-beam resist to have a slanted top surface between the step and a source of the FET; etching anisotropically vertically the second negative tone electron-beam resist and the dielectric to remove the second negative tone electron-beam resist and to transfer a shape of the slanted top surface to the dielectric between the step and the source of the FET; and forming a gatehead comprising metal on the dielectric between the step and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; depositing first dielectric on the epitaxy by plasma- enhanced chemical vapor deposition (PECVD), the first dielectric having a thickness corresponding to a desired maximum slant height; depositing a second dielectric on the first dielectric to form a wall near a drain of the FET; depositing a negative tone electron-beam resist on the first and the second dielectric, wherein surface tension causes the deposited negative tone electron-beam resist to have a slanted top surface between the wall and a source of the FET; etching anisotropically vertically the negative tone electron-beam resist, the first dielectric and the second 22 dielectric to remove the negative tone electron-beam resist and to transfer a shape of the slanted top surface to the first dielectric between the wall and the source of the FET; and forming a gatehead comprising metal on the dielectric between the wall and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; 23 depositing a first dielectric on the epitaxy; forming first negative tone electron-beam resist on the first dielectric near a source of the FET; depositing second dielectric over the first dielectric and the first negative tone electron-beam resist; planarizing the second dielectric and the first negative tone electron-beam resist using chemical-mechanical polishing (CMP); forming second negative tone electron-beam resist on the over the first negative tone electron-beam resist and the second dielectric near a source of the FET, the second negative tone electron-beam resist having a longer lateral length than the first negative tone electron-beam resist; depositing third dielectric over the second dielectric and the second negative tone electron-beam resist; planarizing the third dielectric and the second negative tone electron-beam resist using chemical-mechanical polishing (CMP); removing the first negative tone electron-beam resist and the second negative tone electron-beam resist by wet etching, wherein the second dielectric forms a first step from the first dielectric, and the third dielectric forms a second step from the second dielectric; depositing third negative tone electron-beam resist over the first, second and third dielectric, wherein surface tension causes the deposited third negative tone electron- beam resist to have a slanted top surface between the first step and a source of the FET, and between the second step and the first step; etching anisotropically vertically the third negative tone electron-beam resist and the first, second and third dielectric to remove the third negative tone electron-beam 24 resist and to transfer a shape of the slanted top surface to the first, second and third dielectric between the second step and the source of the FET; and forming a gatehead comprising metal on the first, second and third dielectric between the second step and the source of the FET; wherein the gatehead forms a slanted field plate.

A method of forming a slanted field plate comprising: forming epitaxy for a field effect transistor (FET) on a substrate; depositing a dielectric on the epitaxy; forming a first negative tone electron-beam resist on the dielectric near a drain of the FET to form a first step; depositing second negative tone electron-beam resist dielectric over the first negative tone electron-beam resist and near a drain of the FET to form a second step, the second negative tone electron-beam resist having a lateral length less than the first negative tone electron-beam resist; depositing third negative tone electron-beam resist over the first and second negative tone electron-beam resist, wherein surface tension causes the deposited third negative tone electron-beam resist to have a slanted top surface between the first step and a source of the FET, and between the second step and the first step; etching anisotropically vertically the first, second and third negative tone electron-beam resist to remove the first, second and third negative tone electron-beam resist and to transfer a shape of the slanted top surface to the dielectric between the second step and the source of the FET; and forming a gatehead comprising metal on the dielectric between the second step and the source of the FET; wherein the gatehead forms a slanted field plate.