THREE-DIMENSIONAL GaN EPITAXIAL STRUCTURE AND MANUFACTURING METHOD THEREOF

I-Kai LO

Patent

Atlas literature

Patent

US 8,728,235

THREE-DIMENSIONAL GaN EPITAXIAL STRUCTURE AND MANUFACTURING METHOD THEREOF

I-Kai LO

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 is a ﬂow chart of manufacturing method for the growing three-dimensional GaN epitaxial structure in accordance with a preferred embodiment of the …

FIG. 2

FIG. 2 is a cross sectional view of the apparatus of

FIG. 3

FIG. 3 is a diagram illustrating a basic structure with one N atom and four Ga atoms in accordance with a preferred embodiment of the present invention;

FIG. 4

FIG. 4 is a diagram illustrating the awl-shaped disk of the ball-stick model for GaN epilayer in accordance with a preferred embodiment of the 20 present …

FIG. 5

FIG. 5, Ga atom is deﬁned as a center atom bonding with four N atoms. Bonding between Ga atom and one N atom, which located above Ga atom, is called a bond. …

FIG. 6

FIG. 7

FIG. 7 is a SEM micrographic image of the hexagonal disk of GaN structure in accordance with a preferred embodiment of the present invention. 10

FIG. 8

FIG. 8 is an enlarged cross-sectional TEM image of the disk in accordance with a preferred embodiment of the present invention; FIG 9 is a SEM micrographic …

FIG. 9

FIG. 9, or a broadened disk-like surface formed thereon as shown on

FIG. 10

FIG. 10. 5 Therefore, in comparison with conventional GaN nanopillar structure, with the broadened disk- like surface, the diﬃculty for connection between the …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 7 dependent

1
IndependentGaNLiAlO₂Gathree-dimensional GaN epitaxial structure (hexagonal micropyramid)
1. A manufacturing method for three-dimensional GaN epitaxial structure comprising: a dispos in g step, in which a substrate of LiA lO 2 and a source metal of Ga are disposed inside a vacuum chamber; an expos in g step o f importing N ions in plasma state and generated by a nitrogen source into the chamber; a heating step o f heating up the source metal to generate Ga vapor; and a growing step o f form in g a three-dimensional GaN epitaxial structure on the substrate by reaction between the Ga vapor and the plasma state of N i ons, wherein a temperature of the substrate for form in g the three-dimensional GaN epitaxial structure is hi g her than 700740 0 C and lower than 750 o C, and a N/Ga ﬂux ratio is 36, with a ﬂow rate of N₂ being 8.25 x 106 torr, and wherein a ﬁrst end of the three-dimensional GaN epitaxial structure is a taper terminal connecting with the substrate and a second end of the three-dimensional GaN epitaxial structure is a broadened free end with a hexagonal disk-like surface.
1. 2
  Dependent← claim 1GaNLiAlO₂GaGaNthree-dimensional GaN epitaxial structure (hexagonal micropyramid)
  The manufacturing method for three-dimensional GaN epitaxial structure as deﬁned in claim 1, wherein, a buﬀer layer making step is proceeded after the heating step and before the growing step, with the GaN buﬀer layer on the surface of the substrate formed by reaction between the Ga vapor and plasma state of N ions inside the chamber in the buﬀer layer making step.
2. 3
  Dependent← claim 1GaNLiAlO₂Ga
  (O ri ginal) The manufacturing method for three-dimensional GaN epitaxial structure as deﬁned in claim 1, where in the nitrogen source is a N₂ generator or a NH₃ generator.
3. 4
  Dependent← claim 1LiAlO₂
  The manufacturing method for three-dimensional GaN epitax ial structure as deﬁned in claim 1, where in the substrate is cleaned before disposing the substrate of LiA lO 2 into the chamber. Application No. 12/568,29 1 Attorney Docket No. 3624/0354PUS 1 Response to Oﬃce Action dated 7 Nov 2013 Page 4 of 6
4. 6
  Dependent← claim 1GaNthree-dimensional GaN epitaxial structure (hexagonal micropyramid)
  The manufacturing method for three-dimensional GaN epitaxial structure as deﬁned in claim 1, wherein the three-dimensional GaN epitaxial structure is in a shape of a hexagonal micropyramid -er-hex age nal-red. currently amended
7
Independent
canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

three-dimensional GaN epitaxial structure (hexagonal micropyramid)

GaN3D epitaxial structure

GaNbuffer layer (optional)

LiAlO₂substrate

Materials

Materials described outside the worked examples.

GaN

Epitaxial Structure/Grown Material

Buffer Layer

LiAlO₂

Substrate

Process steps

Additional fabrication and treatment steps described in the patent.

Mbe Growth

Step 1

Temperature

700, 750°C

Ambient

ultra-high vacuum

Process details

substrate:LiAlO₂

plasma type:

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

sem

SEM

FIG. 7 is a SEM micrographic image of the hexagonal disk of GaN structure in accordance with a preferred embodiment of the present invention. 10

Figure references

FIG. 7

GaNGaN

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Temperature	600–750 °C	—
Pressure

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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