Patent
US 9,306,099MATERIAL INCLUDING GRAPHENE AND AN INORGANIC MATERIAL AND METHOD OF MANUFACTURING THE MATERIAL
Jae-young CHOI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,306,099Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view illustrating a hexagonal unit cell; [0023]
FIG. 2A; [0025] FIG 2 C is a schematic view illustrating an embodiment of an interface of graphene and an inorganic material; [0026]
FIGS. 3A and 3B are schematic views illustrating distances in a hexagonal repeating unit of graphene and in a hexagonal repeating unit of an inorganic …
FIG. 4 is a schematic view illustrating the structure of an embodiment of a material comprising graphene and an inorganic material; [0029]
FIG. 5 is a scanning electron microscope ("SEM") image of a ZnO nanorod vertically grown with respect to a surface of graphene, according to Example 1; [0030]
FIG. 6A is a transmission electron microscope ("TEM") image of an interface between a ZnO nanorod and graphene, according to Example 1; [0031]
FIG. 7A is a graph of current density (microamperes per square centimeter, p A/cm2) versus time (seconds) illustrating characteristics of a nanoscale power …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A material comprising: a substrate; graphene disposed on the substrate; and an inorganic material having a crystal system and disposed on the graphene, wherein at least one crystal plane of the inorganic material is oriented parallel to a (0001) plane of the graphene, wherein the inorganic material is disposed directly on the graphene, and wherein a difference between a distance between atoms at first and third sites in a hexagon atomic arrangement of the inorganic material and a distance between carbon atoms at first and fourth sites of a hexagonal repeating unit of the graphene is about -10 percent to about 20 percent of the distance between the carbon atoms at the first and fourth sites of the hexagonal repeating unit of the graphene, wherein the inorganic material comprises ZnO.
The material of claim 1, wherein the crystal plane of the inorganic material has an atomic arrangement of a hexagon.
The material of claim 1, wherein the crystal system of the inorganic material is a hexagonal system.
The material of claim 1, wherein the inorganic material is an epitaxial layer on the graphene.
The material of claim 1, wherein the graphene has a sheet shape and an area of equal to or greater than 1 square millimeter.
An electrical device comprising the material of claim 1. SI-35775-US 3 RD₂₀₀₉₀₈₀₀₄₁US 0 YPL O 885US Application No. 12/956,964 Response dated:
canceled
canceled
canceled
A material comprising: a substrate having a surface; an inorganic material having a crystal system, wherein at least one crystal plane of the inorganic material is oriented to be parallel to the surface of the substrate; and graphene interposed between the surface of the substrate and the inorganic material, wherein at least one crystal plane of the inorganic material is oriented parallel to the SVG 12956964.09-14-2015.IEMXKEWZPXXIFW2.CLM.3.9.300.827.890.873.svg 0.153 1.967 Chemistry Black and white wherein a difference between a distance between atoms at first and third sites in a hexagon atomic arrangement of the inorganic material and a distance between carbon atoms at first and fourth sites of a hexagonal repeating unit of the graphene is about -10 percent to about 20 percent of the distance between the carbon atoms at the first and fourth sites of the hexagonal repeating unit of the graphene, wherein the inorganic material comprises ZnO.
The material of claim 12, wherein the crystal plane of the inorganic material has an atomic arrangement of a hexagon.
The material of claim 12, wherein the crystal system of the inorganic material is a hexagonal system.
The material of claim 12, wherein the inorganic material is an epitaxial layer on the graphene.
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene/inorganic material stack on substrate (graphene below inorganic)
graphene/inorganic material stack on substrate (graphene interposed)
Materials described outside the worked examples.
graphene
ZnO
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a scanning electron microscope ("SEM") image of a ZnO nanorod vertically grown with respect to a surface of graphene, according to Example 1; [0030]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–100000000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
METHOD OF FORMING HYBRID NANOSTRUCTURE ON GRAPHENE, HYBRID NANOSTRUCTURE, AND DEVICE INCLUDING THE HYBRID NANOSTRUCTURE
METAL-ALLOY GRAPHENE NANOCOMPOSITES AND METHODS FOR THEIR PREPARATION AND USE
Patent
Atlas literature
Patent
US 9,306,099Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view illustrating a hexagonal unit cell; [0023]
FIG. 2A; [0025] FIG 2 C is a schematic view illustrating an embodiment of an interface of graphene and an inorganic material; [0026]
FIGS. 3A and 3B are schematic views illustrating distances in a hexagonal repeating unit of graphene and in a hexagonal repeating unit of an inorganic …
FIG. 4 is a schematic view illustrating the structure of an embodiment of a material comprising graphene and an inorganic material; [0029]
FIG. 5 is a scanning electron microscope ("SEM") image of a ZnO nanorod vertically grown with respect to a surface of graphene, according to Example 1; [0030]
FIG. 6A is a transmission electron microscope ("TEM") image of an interface between a ZnO nanorod and graphene, according to Example 1; [0031]
FIG. 7A is a graph of current density (microamperes per square centimeter, p A/cm2) versus time (seconds) illustrating characteristics of a nanoscale power …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A material comprising: a substrate; graphene disposed on the substrate; and an inorganic material having a crystal system and disposed on the graphene, wherein at least one crystal plane of the inorganic material is oriented parallel to a (0001) plane of the graphene, wherein the inorganic material is disposed directly on the graphene, and wherein a difference between a distance between atoms at first and third sites in a hexagon atomic arrangement of the inorganic material and a distance between carbon atoms at first and fourth sites of a hexagonal repeating unit of the graphene is about -10 percent to about 20 percent of the distance between the carbon atoms at the first and fourth sites of the hexagonal repeating unit of the graphene, wherein the inorganic material comprises ZnO.
The material of claim 1, wherein the crystal plane of the inorganic material has an atomic arrangement of a hexagon.
The material of claim 1, wherein the crystal system of the inorganic material is a hexagonal system.
The material of claim 1, wherein the inorganic material is an epitaxial layer on the graphene.
The material of claim 1, wherein the graphene has a sheet shape and an area of equal to or greater than 1 square millimeter.
An electrical device comprising the material of claim 1. SI-35775-US 3 RD₂₀₀₉₀₈₀₀₄₁US 0 YPL O 885US Application No. 12/956,964 Response dated:
canceled
canceled
canceled
A material comprising: a substrate having a surface; an inorganic material having a crystal system, wherein at least one crystal plane of the inorganic material is oriented to be parallel to the surface of the substrate; and graphene interposed between the surface of the substrate and the inorganic material, wherein at least one crystal plane of the inorganic material is oriented parallel to the SVG 12956964.09-14-2015.IEMXKEWZPXXIFW2.CLM.3.9.300.827.890.873.svg 0.153 1.967 Chemistry Black and white wherein a difference between a distance between atoms at first and third sites in a hexagon atomic arrangement of the inorganic material and a distance between carbon atoms at first and fourth sites of a hexagonal repeating unit of the graphene is about -10 percent to about 20 percent of the distance between the carbon atoms at the first and fourth sites of the hexagonal repeating unit of the graphene, wherein the inorganic material comprises ZnO.
The material of claim 12, wherein the crystal plane of the inorganic material has an atomic arrangement of a hexagon.
The material of claim 12, wherein the crystal system of the inorganic material is a hexagonal system.
The material of claim 12, wherein the inorganic material is an epitaxial layer on the graphene.
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene/inorganic material stack on substrate (graphene below inorganic)
graphene/inorganic material stack on substrate (graphene interposed)
Materials described outside the worked examples.
graphene
ZnO
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a scanning electron microscope ("SEM") image of a ZnO nanorod vertically grown with respect to a surface of graphene, according to Example 1; [0030]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–100000000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
METHOD OF FORMING HYBRID NANOSTRUCTURE ON GRAPHENE, HYBRID NANOSTRUCTURE, AND DEVICE INCLUDING THE HYBRID NANOSTRUCTURE
METAL-ALLOY GRAPHENE NANOCOMPOSITES AND METHODS FOR THEIR PREPARATION AND USE
Patent
Atlas literature
Patent
US 9,306,099Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view illustrating a hexagonal unit cell; [0023]
FIG. 2A; [0025] FIG 2 C is a schematic view illustrating an embodiment of an interface of graphene and an inorganic material; [0026]
FIGS. 3A and 3B are schematic views illustrating distances in a hexagonal repeating unit of graphene and in a hexagonal repeating unit of an inorganic …
FIG. 4 is a schematic view illustrating the structure of an embodiment of a material comprising graphene and an inorganic material; [0029]
FIG. 5 is a scanning electron microscope ("SEM") image of a ZnO nanorod vertically grown with respect to a surface of graphene, according to Example 1; [0030]
FIG. 6A is a transmission electron microscope ("TEM") image of an interface between a ZnO nanorod and graphene, according to Example 1; [0031]
FIG. 7A is a graph of current density (microamperes per square centimeter, p A/cm2) versus time (seconds) illustrating characteristics of a nanoscale power …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A material comprising: a substrate; graphene disposed on the substrate; and an inorganic material having a crystal system and disposed on the graphene, wherein at least one crystal plane of the inorganic material is oriented parallel to a (0001) plane of the graphene, wherein the inorganic material is disposed directly on the graphene, and wherein a difference between a distance between atoms at first and third sites in a hexagon atomic arrangement of the inorganic material and a distance between carbon atoms at first and fourth sites of a hexagonal repeating unit of the graphene is about -10 percent to about 20 percent of the distance between the carbon atoms at the first and fourth sites of the hexagonal repeating unit of the graphene, wherein the inorganic material comprises ZnO.
The material of claim 1, wherein the crystal plane of the inorganic material has an atomic arrangement of a hexagon.
The material of claim 1, wherein the crystal system of the inorganic material is a hexagonal system.
The material of claim 1, wherein the inorganic material is an epitaxial layer on the graphene.
The material of claim 1, wherein the graphene has a sheet shape and an area of equal to or greater than 1 square millimeter.
An electrical device comprising the material of claim 1. SI-35775-US 3 RD₂₀₀₉₀₈₀₀₄₁US 0 YPL O 885US Application No. 12/956,964 Response dated:
canceled
canceled
canceled
A material comprising: a substrate having a surface; an inorganic material having a crystal system, wherein at least one crystal plane of the inorganic material is oriented to be parallel to the surface of the substrate; and graphene interposed between the surface of the substrate and the inorganic material, wherein at least one crystal plane of the inorganic material is oriented parallel to the SVG 12956964.09-14-2015.IEMXKEWZPXXIFW2.CLM.3.9.300.827.890.873.svg 0.153 1.967 Chemistry Black and white wherein a difference between a distance between atoms at first and third sites in a hexagon atomic arrangement of the inorganic material and a distance between carbon atoms at first and fourth sites of a hexagonal repeating unit of the graphene is about -10 percent to about 20 percent of the distance between the carbon atoms at the first and fourth sites of the hexagonal repeating unit of the graphene, wherein the inorganic material comprises ZnO.
The material of claim 12, wherein the crystal plane of the inorganic material has an atomic arrangement of a hexagon.
The material of claim 12, wherein the crystal system of the inorganic material is a hexagonal system.
The material of claim 12, wherein the inorganic material is an epitaxial layer on the graphene.
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene/inorganic material stack on substrate (graphene below inorganic)
graphene/inorganic material stack on substrate (graphene interposed)
Materials described outside the worked examples.
graphene
ZnO
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a scanning electron microscope ("SEM") image of a ZnO nanorod vertically grown with respect to a surface of graphene, according to Example 1; [0030]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–100000000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
METHOD OF FORMING HYBRID NANOSTRUCTURE ON GRAPHENE, HYBRID NANOSTRUCTURE, AND DEVICE INCLUDING THE HYBRID NANOSTRUCTURE
METAL-ALLOY GRAPHENE NANOCOMPOSITES AND METHODS FOR THEIR PREPARATION AND USE
Patent
Atlas literature
Patent
US 9,306,099Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view illustrating a hexagonal unit cell; [0023]
FIG. 2A; [0025] FIG 2 C is a schematic view illustrating an embodiment of an interface of graphene and an inorganic material; [0026]
FIGS. 3A and 3B are schematic views illustrating distances in a hexagonal repeating unit of graphene and in a hexagonal repeating unit of an inorganic …
FIG. 4 is a schematic view illustrating the structure of an embodiment of a material comprising graphene and an inorganic material; [0029]
FIG. 5 is a scanning electron microscope ("SEM") image of a ZnO nanorod vertically grown with respect to a surface of graphene, according to Example 1; [0030]
FIG. 6A is a transmission electron microscope ("TEM") image of an interface between a ZnO nanorod and graphene, according to Example 1; [0031]
FIG. 7A is a graph of current density (microamperes per square centimeter, p A/cm2) versus time (seconds) illustrating characteristics of a nanoscale power …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A material comprising: a substrate; graphene disposed on the substrate; and an inorganic material having a crystal system and disposed on the graphene, wherein at least one crystal plane of the inorganic material is oriented parallel to a (0001) plane of the graphene, wherein the inorganic material is disposed directly on the graphene, and wherein a difference between a distance between atoms at first and third sites in a hexagon atomic arrangement of the inorganic material and a distance between carbon atoms at first and fourth sites of a hexagonal repeating unit of the graphene is about -10 percent to about 20 percent of the distance between the carbon atoms at the first and fourth sites of the hexagonal repeating unit of the graphene, wherein the inorganic material comprises ZnO.
The material of claim 1, wherein the crystal plane of the inorganic material has an atomic arrangement of a hexagon.
The material of claim 1, wherein the crystal system of the inorganic material is a hexagonal system.
The material of claim 1, wherein the inorganic material is an epitaxial layer on the graphene.
The material of claim 1, wherein the graphene has a sheet shape and an area of equal to or greater than 1 square millimeter.
An electrical device comprising the material of claim 1. SI-35775-US 3 RD₂₀₀₉₀₈₀₀₄₁US 0 YPL O 885US Application No. 12/956,964 Response dated:
canceled
canceled
canceled
A material comprising: a substrate having a surface; an inorganic material having a crystal system, wherein at least one crystal plane of the inorganic material is oriented to be parallel to the surface of the substrate; and graphene interposed between the surface of the substrate and the inorganic material, wherein at least one crystal plane of the inorganic material is oriented parallel to the SVG 12956964.09-14-2015.IEMXKEWZPXXIFW2.CLM.3.9.300.827.890.873.svg 0.153 1.967 Chemistry Black and white wherein a difference between a distance between atoms at first and third sites in a hexagon atomic arrangement of the inorganic material and a distance between carbon atoms at first and fourth sites of a hexagonal repeating unit of the graphene is about -10 percent to about 20 percent of the distance between the carbon atoms at the first and fourth sites of the hexagonal repeating unit of the graphene, wherein the inorganic material comprises ZnO.
The material of claim 12, wherein the crystal plane of the inorganic material has an atomic arrangement of a hexagon.
The material of claim 12, wherein the crystal system of the inorganic material is a hexagonal system.
The material of claim 12, wherein the inorganic material is an epitaxial layer on the graphene.
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene/inorganic material stack on substrate (graphene below inorganic)
graphene/inorganic material stack on substrate (graphene interposed)
Materials described outside the worked examples.
graphene
ZnO
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a scanning electron microscope ("SEM") image of a ZnO nanorod vertically grown with respect to a surface of graphene, according to Example 1; [0030]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–100000000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
METHOD OF FORMING HYBRID NANOSTRUCTURE ON GRAPHENE, HYBRID NANOSTRUCTURE, AND DEVICE INCLUDING THE HYBRID NANOSTRUCTURE
METAL-ALLOY GRAPHENE NANOCOMPOSITES AND METHODS FOR THEIR PREPARATION AND USE
electrical device comprising graphene/inorganic material
substrate
inorganic material (general)
GaN
Al₂O₃
FIG. 6A is a transmission electron microscope ("TEM") image of an interface between a ZnO nanorod and graphene, according to Example 1; [0031]
FIG. 7A is a graph of current density (microamperes per square centimeter, p A/cm2) versus time (seconds) illustrating characteristics of a nanoscale power …
| — |
Thickness | 1000–1000000 nm | — |
Duration | 600–14400 s | — |
Duration | 1200–7200 s | — |
Duration | 2400–3600 s | — |
electrical device comprising graphene/inorganic material
substrate
inorganic material (general)
GaN
Al₂O₃
FIG. 6A is a transmission electron microscope ("TEM") image of an interface between a ZnO nanorod and graphene, according to Example 1; [0031]
FIG. 7A is a graph of current density (microamperes per square centimeter, p A/cm2) versus time (seconds) illustrating characteristics of a nanoscale power …
| — |
Thickness | 1000–1000000 nm | — |
Duration | 600–14400 s | — |
Duration | 1200–7200 s | — |
Duration | 2400–3600 s | — |
electrical device comprising graphene/inorganic material
substrate
inorganic material (general)
GaN
Al₂O₃
FIG. 6A is a transmission electron microscope ("TEM") image of an interface between a ZnO nanorod and graphene, according to Example 1; [0031]
FIG. 7A is a graph of current density (microamperes per square centimeter, p A/cm2) versus time (seconds) illustrating characteristics of a nanoscale power …
| — |
Thickness | 1000–1000000 nm | — |
Duration | 600–14400 s | — |
Duration | 1200–7200 s | — |
Duration | 2400–3600 s | — |
electrical device comprising graphene/inorganic material
substrate
inorganic material (general)
GaN
Al₂O₃
FIG. 6A is a transmission electron microscope ("TEM") image of an interface between a ZnO nanorod and graphene, according to Example 1; [0031]
FIG. 7A is a graph of current density (microamperes per square centimeter, p A/cm2) versus time (seconds) illustrating characteristics of a nanoscale power …
| — |
Thickness | 1000–1000000 nm | — |
Duration | 600–14400 s | — |
Duration | 1200–7200 s | — |
Duration | 2400–3600 s | — |