GRAPHENE PRODUCTION METHOD

Hyeong Keun KIM

Patent

Atlas literature

Patent

US 11,097,950

GRAPHENE PRODUCTION METHOD

Hyeong Keun KIM

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 is a view illustrating an SEM image of graphene which is synthesized by a direct growth method; [22] FIGs. 2 to 9 are views provided to explain a …

FIG. 2

FIG. 2, the graphene pattern forming step of forming the graphene forming pattern 111 on the graphene growth substrate 110 is performed ﬁrst. [31] The graphene …

FIG. 3

FIG. 3.

FIG. 4

FIG. 4. Referring to

FIG. 5

FIG. 5, it can be seen that light radiation is performed on the graphene growth substrate 110 and a light radiation portion is formed in a V shape. The light …

FIG. 6

FIG. 7

FIG. 7 depicts that the graphene layer 120 is not formed in the area of the graphene forming pattern 111, it does not mean that the graphene 120 is not formed, …

FIG. 8

FIG. 8 is an enlarged view of the C area of FIG 6B where two adjacent graphene domains meet each other. The upper graphene domain may be referred to as a ﬁrst …

FIG. 9

FIG. 9. Each graphene domain is implemented in a hexagonal shape, and is shown as the shape of the graphene forming pattern 111 is transferred. According to …

FIG. 10

FIG. 10 is a view provided to explain a method for fabricating a graphene forming substrate according to another embodiment of the present disclosure. …

FIG. 11

FIG. 11 is a view illustrating an SEM image of graphene which is formed on an N.M. rolled copper foil according to a graphene fabrication method according to …

FIG. 12

FIG. 13

FIG. 13 is a view illustrating an SEM image of graphene which is formed on an SRC rolled copper foil according to a graphene fabrication method according to an …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

5 independent · 11 dependent

1
Independentgraphene layergraphene growth substrate
A method for fabricating graphene, the method comprising: a graphene growth substrate step of fabricating a graphene growth substrate, comprising: placing a mask corresponding to a graphene forming pattern on an upper portion of the graphene growth substrate; radiating light to an upper portion of the mask to form the graphene forming pattern thereon; and oxidizing an area of the graphene forming substrate to which the light is radiated to suppress growth of graphene; a graphene pattern forming step of forming a graphene forming pattern on the graphene growth substrate; and a graphene forming step of forming a graphene layer on the graphene growth substrate by suppressing growth of the graphene layer in an area of the graphene forming pattern, the graphene growth substrate having the graphene forming pattern formed thereon, wherein growth of the graphene layer starts in a direction from a center of the graphene forming pattern toward a boundary thereof. Previously presented
1. 2
  Dependent← claim 1graphene growth substrate metal
  The method of claim 1, wherein the graphene growth substrate comprises one or more metals selected from the group consisting of Ni, Co, Fe, Pt, Au, A l, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ge, Ta, Ti, W, U, V, Zr, brass, bronze, cupro-nickel and stainless steel or an alloy thereof. Original
2. 3
  Dependent← claim 1
  The method of claim 1, wherein the graphene forming pattern is a pattern for suppressing the growth of the graphene layer. Previously presented
3. 4
  Dependent← claim 1
  The method of claim 1, wherein the graphene pattern forming step comprises radiating light to the graphene growth substrate. Original
4. 6
  Dependent← claim 1
  The method of claim 1, wherein the graphene forming pattern is a honeycombed pattern in which a hexagonal pattern is repeated. Original
5. 7
  Dependent← claim 1graphene layer
  The method of claim 1, wherein the graphene layer has a domain of a shape which is the same as the graphene forming pattern. Original
6. 13
  Dependent← claim 1catalyst layer
  The method of claim 1, further including a catalyst layer conﬁgured to promote adsorption of carbon to grow the graphene layer. Previously presented
7. 14
  Dependent← claim 1
  The method of claim 1, further comprising: performing a heat treatment process onto the graphene growth substrate, wherein a heat treatment temperature ranges from 300 0C to 2000 °C. Previously presented
8. 15
  Dependent← claim 1carbon source
  The method of claim 1, further comprising: performing a heating process onto the graphene growth substrate; reacting the graphene growth substrate with a carbon source; and forming a crystal structure in the graphene layer based on the reacting. Previously presented
9. 16
  Dependent← claim 1graphene layer
  The method of claim 1, wherein the graphene forming pattern includes a plurality of hexagonal patterns, and wherein the graphene layer, being formed, has plural domains in a respective shape which is the same as the graphene forming pattern. Previously presented
8
Independent
Canceled
9
Independent
Canceled
10
Independent
Canceled
11
Independent
Canceled

Materials

Materials described outside the worked examples.

graphene layer

Grown Material

graphene growth substrate

Growth Substrate

Process steps

Additional fabrication and treatment steps described in the patent.

Graphene Growth

Step 1

Temperature

300, 2000°C

Process details

light types:intense pulsed light (IPL), laser light

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

sem

SEM

FIG. 1 is a view illustrating an SEM image of graphene which is synthesized by a direct growth method; [22] FIGs. 2 to 9 are views provided to explain a …

Figure references

FIG. 1

graphenegraphene

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GRAPHENE PRODUCTION METHOD | Matter42 Literature