Patent
US 10,680,176METHOD OF FORMING HYBRID NANOSTRUCTURE ON GRAPHENE, HYBRID NANOSTRUCTURE, AND DEVICE INCLUDING THE HYBRID NANOSTRUCTURE
Sang-woo KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,680,176Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 a diagram schematically illustrating an embodiment of a processes of forming a hybrid nanostructure; [0019]
FIGS. 2A through 2 C are field emission scanning electron micrographs ("FE- SEMs") of hybrid nanostructures prepared in Examples 1 through 3; [0020]
FIGS. 3A through 3 C are FE-SEMs of cross sections of the hybrid nanostructures of Examples 1 through 3, respectively; [0021]
FIGS. 4A through 4 C are graphs of intensity (arbitrary units, a.u.) versus scattering angle (degrees two-theta, 2 0) showing X-ray diffraction ("XRD") patterns …
FIGS. 5A through 5D are high resolution transmission electron micrographs ("HR-TEMs") of the composite nanostructure including the hybrid nanostructure of …
FIGS. 6A is a graph of current density (nanoamps per square centimeter, nA/cm2) versus time (seconds, sec) and 6B is a graph of voltage (millivolts, mV) versus …
FIGS. 7A and 7B are respectively an HR-TEM and a micro-energy dispersive spectroscopy ("p-EDS") spectrum, which is a graph of counts versus energy …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a hybrid nanostructure on graphene, the method comprising: providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure, wherein the nanomaterial is a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2,, -indium zin c oxide, gallium indium zin c oxide, Al I nN, a metal of Group 10, or a combination thereof, and wherein the hybrid nanostructure comprises a nanowall, a combination of a nanowall and a nanowire, and a nanowire in the stated order from the graphene layer. Currently amended
The method of claim 1, wherein the forming of the graphene layer comprises: growing the graphene layer on a catalyst layer via chemical deposition; removing the catalyst layer from the graphene layer; and transferring the graphene layer to the substrate. Original
The method of claim 1, wherein a thickness of the metal layer is from about 0.5 nanometers to about 5 nanometers. Original
The method of claim 1, wherein the metal layer consists of gold. Original
The method of claim 1, wherein the nanomaterial is chemically deposited for about 30 minutes to about 2 hours at about 800 to about 950 °C. Original
The method of claim 1, wherein a thickness of the formed metal layer is effective to selectively grow a nanowall or a nanowire. Original
The method of claim 1, wherein a structure of the metal layer is converted to an island structure when the nanomaterial is chemically deposited. Original
Canceled
Canceled
A composite nanostructure comprising: a substrate; a graphene layer formed on the substrate; and a hybrid nanostructure formed on the graphene layer and comprising a combination of a nanowall and a nanowire, wherein the nanowall and the nanowire comprise a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2,, -indium zin c oxide, gallium indium zin c oxide, AlI nN, a metal of Group 10, or a combination thereof. Currently amended
The composite nanostructure of claim 10, further comprising a metal layer between the graphene layer and the nanostructure, wherein the metal layer has an island structure. Original
The composite nanostructure of claim 10, wherein the hybrid nanostructure comprises the nanowall, a combination of the nanowall and the nanowire, and the nanowire in the stated order from the substrate. Previously presented
The composite nanostructure of claim 10, wherein the substrate is transparent and comprises polyethylene naphthalate, silicon oxide, aluminum oxide, or a combination thereof. Original
A nanoelectronic device comprising the composite nanostructure according to claim 10. Original
A hybrid nanostructure comprising: a nanowall; and a nanowire abutting the nanowall, wherein the nanowall and the nanowire comprise a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2, 2 -indium zin c oxide, gallium indium zin c oxide, AlI nN, a metal of Group 10, or a combination thereof, and wherein a thickness of the nanowall is about to about 100 nm and a diameter of the nanowire is about 5 to about 100 nm. Currently amended
The hybrid nanostructure of claim 19, further comprising a combination of the nanowall and the nanowire between both the nanowall and the nanowire, wherein the combination comprises a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2, 2 -indium zin c oxide, gallium indium zin c oxide, A lI nN, a metal of Group 10, or a combination thereof. Currently amended
The hybrid nanostructure of claim 19, wherein the nanowall has a height of about 1 to about 100 pm, the nanowire has a length of about 1 to about 100 p m, and a direction of the height of the nanowall and a direction of the length of the nanowire are parallel. Original
A method of forming a hybrid nanostructure on graphene, the method comprising: providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure, wherein the nanomaterial comprises a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V 0 2,, -indium zin c oxide, gallium indium zin c oxide, Al I nN, or a metal of Group 10, and wherein the hybrid nanostructure comprises a nanowall, a combination of a nanowall and a nanowire, and a nanowire in the stated order from the graphene layer. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
hybrid nanostructure on graphene (method product)
composite nanostructure
Materials described outside the worked examples.
ternary phase nanomaterial (Group IV-V-VI)
VO₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 2A through 2 C are field emission scanning electron micrographs ("FE- SEMs") of hybrid nanostructures prepared in Examples 1 through 3; [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
metal layer thickness (claimed range) | 0.5–5 nm | metal layer |
nanowall thickness (claimed range) | ≤ 100 nm |
Related documents with shared materials, methods, properties, or citations.
MATERIAL INCLUDING GRAPHENE AND AN INORGANIC MATERIAL AND METHOD OF MANUFACTURING THE MATERIAL
Synthesis and guided assembly of niobium trisulfide nanowires and nanowire chains by chemical vapor deposition
Patent
Atlas literature
Patent
US 10,680,176Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 a diagram schematically illustrating an embodiment of a processes of forming a hybrid nanostructure; [0019]
FIGS. 2A through 2 C are field emission scanning electron micrographs ("FE- SEMs") of hybrid nanostructures prepared in Examples 1 through 3; [0020]
FIGS. 3A through 3 C are FE-SEMs of cross sections of the hybrid nanostructures of Examples 1 through 3, respectively; [0021]
FIGS. 4A through 4 C are graphs of intensity (arbitrary units, a.u.) versus scattering angle (degrees two-theta, 2 0) showing X-ray diffraction ("XRD") patterns …
FIGS. 5A through 5D are high resolution transmission electron micrographs ("HR-TEMs") of the composite nanostructure including the hybrid nanostructure of …
FIGS. 6A is a graph of current density (nanoamps per square centimeter, nA/cm2) versus time (seconds, sec) and 6B is a graph of voltage (millivolts, mV) versus …
FIGS. 7A and 7B are respectively an HR-TEM and a micro-energy dispersive spectroscopy ("p-EDS") spectrum, which is a graph of counts versus energy …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a hybrid nanostructure on graphene, the method comprising: providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure, wherein the nanomaterial is a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2,, -indium zin c oxide, gallium indium zin c oxide, Al I nN, a metal of Group 10, or a combination thereof, and wherein the hybrid nanostructure comprises a nanowall, a combination of a nanowall and a nanowire, and a nanowire in the stated order from the graphene layer. Currently amended
The method of claim 1, wherein the forming of the graphene layer comprises: growing the graphene layer on a catalyst layer via chemical deposition; removing the catalyst layer from the graphene layer; and transferring the graphene layer to the substrate. Original
The method of claim 1, wherein a thickness of the metal layer is from about 0.5 nanometers to about 5 nanometers. Original
The method of claim 1, wherein the metal layer consists of gold. Original
The method of claim 1, wherein the nanomaterial is chemically deposited for about 30 minutes to about 2 hours at about 800 to about 950 °C. Original
The method of claim 1, wherein a thickness of the formed metal layer is effective to selectively grow a nanowall or a nanowire. Original
The method of claim 1, wherein a structure of the metal layer is converted to an island structure when the nanomaterial is chemically deposited. Original
Canceled
Canceled
A composite nanostructure comprising: a substrate; a graphene layer formed on the substrate; and a hybrid nanostructure formed on the graphene layer and comprising a combination of a nanowall and a nanowire, wherein the nanowall and the nanowire comprise a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2,, -indium zin c oxide, gallium indium zin c oxide, AlI nN, a metal of Group 10, or a combination thereof. Currently amended
The composite nanostructure of claim 10, further comprising a metal layer between the graphene layer and the nanostructure, wherein the metal layer has an island structure. Original
The composite nanostructure of claim 10, wherein the hybrid nanostructure comprises the nanowall, a combination of the nanowall and the nanowire, and the nanowire in the stated order from the substrate. Previously presented
The composite nanostructure of claim 10, wherein the substrate is transparent and comprises polyethylene naphthalate, silicon oxide, aluminum oxide, or a combination thereof. Original
A nanoelectronic device comprising the composite nanostructure according to claim 10. Original
A hybrid nanostructure comprising: a nanowall; and a nanowire abutting the nanowall, wherein the nanowall and the nanowire comprise a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2, 2 -indium zin c oxide, gallium indium zin c oxide, AlI nN, a metal of Group 10, or a combination thereof, and wherein a thickness of the nanowall is about to about 100 nm and a diameter of the nanowire is about 5 to about 100 nm. Currently amended
The hybrid nanostructure of claim 19, further comprising a combination of the nanowall and the nanowire between both the nanowall and the nanowire, wherein the combination comprises a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2, 2 -indium zin c oxide, gallium indium zin c oxide, A lI nN, a metal of Group 10, or a combination thereof. Currently amended
The hybrid nanostructure of claim 19, wherein the nanowall has a height of about 1 to about 100 pm, the nanowire has a length of about 1 to about 100 p m, and a direction of the height of the nanowall and a direction of the length of the nanowire are parallel. Original
A method of forming a hybrid nanostructure on graphene, the method comprising: providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure, wherein the nanomaterial comprises a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V 0 2,, -indium zin c oxide, gallium indium zin c oxide, Al I nN, or a metal of Group 10, and wherein the hybrid nanostructure comprises a nanowall, a combination of a nanowall and a nanowire, and a nanowire in the stated order from the graphene layer. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
hybrid nanostructure on graphene (method product)
composite nanostructure
Materials described outside the worked examples.
ternary phase nanomaterial (Group IV-V-VI)
VO₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 2A through 2 C are field emission scanning electron micrographs ("FE- SEMs") of hybrid nanostructures prepared in Examples 1 through 3; [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
metal layer thickness (claimed range) | 0.5–5 nm | metal layer |
nanowall thickness (claimed range) | ≤ 100 nm |
Related documents with shared materials, methods, properties, or citations.
MATERIAL INCLUDING GRAPHENE AND AN INORGANIC MATERIAL AND METHOD OF MANUFACTURING THE MATERIAL
Synthesis and guided assembly of niobium trisulfide nanowires and nanowire chains by chemical vapor deposition
Patent
Atlas literature
Patent
US 10,680,176Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 a diagram schematically illustrating an embodiment of a processes of forming a hybrid nanostructure; [0019]
FIGS. 2A through 2 C are field emission scanning electron micrographs ("FE- SEMs") of hybrid nanostructures prepared in Examples 1 through 3; [0020]
FIGS. 3A through 3 C are FE-SEMs of cross sections of the hybrid nanostructures of Examples 1 through 3, respectively; [0021]
FIGS. 4A through 4 C are graphs of intensity (arbitrary units, a.u.) versus scattering angle (degrees two-theta, 2 0) showing X-ray diffraction ("XRD") patterns …
FIGS. 5A through 5D are high resolution transmission electron micrographs ("HR-TEMs") of the composite nanostructure including the hybrid nanostructure of …
FIGS. 6A is a graph of current density (nanoamps per square centimeter, nA/cm2) versus time (seconds, sec) and 6B is a graph of voltage (millivolts, mV) versus …
FIGS. 7A and 7B are respectively an HR-TEM and a micro-energy dispersive spectroscopy ("p-EDS") spectrum, which is a graph of counts versus energy …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a hybrid nanostructure on graphene, the method comprising: providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure, wherein the nanomaterial is a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2,, -indium zin c oxide, gallium indium zin c oxide, Al I nN, a metal of Group 10, or a combination thereof, and wherein the hybrid nanostructure comprises a nanowall, a combination of a nanowall and a nanowire, and a nanowire in the stated order from the graphene layer. Currently amended
The method of claim 1, wherein the forming of the graphene layer comprises: growing the graphene layer on a catalyst layer via chemical deposition; removing the catalyst layer from the graphene layer; and transferring the graphene layer to the substrate. Original
The method of claim 1, wherein a thickness of the metal layer is from about 0.5 nanometers to about 5 nanometers. Original
The method of claim 1, wherein the metal layer consists of gold. Original
The method of claim 1, wherein the nanomaterial is chemically deposited for about 30 minutes to about 2 hours at about 800 to about 950 °C. Original
The method of claim 1, wherein a thickness of the formed metal layer is effective to selectively grow a nanowall or a nanowire. Original
The method of claim 1, wherein a structure of the metal layer is converted to an island structure when the nanomaterial is chemically deposited. Original
Canceled
Canceled
A composite nanostructure comprising: a substrate; a graphene layer formed on the substrate; and a hybrid nanostructure formed on the graphene layer and comprising a combination of a nanowall and a nanowire, wherein the nanowall and the nanowire comprise a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2,, -indium zin c oxide, gallium indium zin c oxide, AlI nN, a metal of Group 10, or a combination thereof. Currently amended
The composite nanostructure of claim 10, further comprising a metal layer between the graphene layer and the nanostructure, wherein the metal layer has an island structure. Original
The composite nanostructure of claim 10, wherein the hybrid nanostructure comprises the nanowall, a combination of the nanowall and the nanowire, and the nanowire in the stated order from the substrate. Previously presented
The composite nanostructure of claim 10, wherein the substrate is transparent and comprises polyethylene naphthalate, silicon oxide, aluminum oxide, or a combination thereof. Original
A nanoelectronic device comprising the composite nanostructure according to claim 10. Original
A hybrid nanostructure comprising: a nanowall; and a nanowire abutting the nanowall, wherein the nanowall and the nanowire comprise a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2, 2 -indium zin c oxide, gallium indium zin c oxide, AlI nN, a metal of Group 10, or a combination thereof, and wherein a thickness of the nanowall is about to about 100 nm and a diameter of the nanowire is about 5 to about 100 nm. Currently amended
The hybrid nanostructure of claim 19, further comprising a combination of the nanowall and the nanowire between both the nanowall and the nanowire, wherein the combination comprises a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2, 2 -indium zin c oxide, gallium indium zin c oxide, A lI nN, a metal of Group 10, or a combination thereof. Currently amended
The hybrid nanostructure of claim 19, wherein the nanowall has a height of about 1 to about 100 pm, the nanowire has a length of about 1 to about 100 p m, and a direction of the height of the nanowall and a direction of the length of the nanowire are parallel. Original
A method of forming a hybrid nanostructure on graphene, the method comprising: providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure, wherein the nanomaterial comprises a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V 0 2,, -indium zin c oxide, gallium indium zin c oxide, Al I nN, or a metal of Group 10, and wherein the hybrid nanostructure comprises a nanowall, a combination of a nanowall and a nanowire, and a nanowire in the stated order from the graphene layer. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
hybrid nanostructure on graphene (method product)
composite nanostructure
Materials described outside the worked examples.
ternary phase nanomaterial (Group IV-V-VI)
VO₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 2A through 2 C are field emission scanning electron micrographs ("FE- SEMs") of hybrid nanostructures prepared in Examples 1 through 3; [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
metal layer thickness (claimed range) | 0.5–5 nm | metal layer |
nanowall thickness (claimed range) | ≤ 100 nm |
Related documents with shared materials, methods, properties, or citations.
MATERIAL INCLUDING GRAPHENE AND AN INORGANIC MATERIAL AND METHOD OF MANUFACTURING THE MATERIAL
Synthesis and guided assembly of niobium trisulfide nanowires and nanowire chains by chemical vapor deposition
Patent
Atlas literature
Patent
US 10,680,176Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 a diagram schematically illustrating an embodiment of a processes of forming a hybrid nanostructure; [0019]
FIGS. 2A through 2 C are field emission scanning electron micrographs ("FE- SEMs") of hybrid nanostructures prepared in Examples 1 through 3; [0020]
FIGS. 3A through 3 C are FE-SEMs of cross sections of the hybrid nanostructures of Examples 1 through 3, respectively; [0021]
FIGS. 4A through 4 C are graphs of intensity (arbitrary units, a.u.) versus scattering angle (degrees two-theta, 2 0) showing X-ray diffraction ("XRD") patterns …
FIGS. 5A through 5D are high resolution transmission electron micrographs ("HR-TEMs") of the composite nanostructure including the hybrid nanostructure of …
FIGS. 6A is a graph of current density (nanoamps per square centimeter, nA/cm2) versus time (seconds, sec) and 6B is a graph of voltage (millivolts, mV) versus …
FIGS. 7A and 7B are respectively an HR-TEM and a micro-energy dispersive spectroscopy ("p-EDS") spectrum, which is a graph of counts versus energy …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a hybrid nanostructure on graphene, the method comprising: providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure, wherein the nanomaterial is a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2,, -indium zin c oxide, gallium indium zin c oxide, Al I nN, a metal of Group 10, or a combination thereof, and wherein the hybrid nanostructure comprises a nanowall, a combination of a nanowall and a nanowire, and a nanowire in the stated order from the graphene layer. Currently amended
The method of claim 1, wherein the forming of the graphene layer comprises: growing the graphene layer on a catalyst layer via chemical deposition; removing the catalyst layer from the graphene layer; and transferring the graphene layer to the substrate. Original
The method of claim 1, wherein a thickness of the metal layer is from about 0.5 nanometers to about 5 nanometers. Original
The method of claim 1, wherein the metal layer consists of gold. Original
The method of claim 1, wherein the nanomaterial is chemically deposited for about 30 minutes to about 2 hours at about 800 to about 950 °C. Original
The method of claim 1, wherein a thickness of the formed metal layer is effective to selectively grow a nanowall or a nanowire. Original
The method of claim 1, wherein a structure of the metal layer is converted to an island structure when the nanomaterial is chemically deposited. Original
Canceled
Canceled
A composite nanostructure comprising: a substrate; a graphene layer formed on the substrate; and a hybrid nanostructure formed on the graphene layer and comprising a combination of a nanowall and a nanowire, wherein the nanowall and the nanowire comprise a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2,, -indium zin c oxide, gallium indium zin c oxide, AlI nN, a metal of Group 10, or a combination thereof. Currently amended
The composite nanostructure of claim 10, further comprising a metal layer between the graphene layer and the nanostructure, wherein the metal layer has an island structure. Original
The composite nanostructure of claim 10, wherein the hybrid nanostructure comprises the nanowall, a combination of the nanowall and the nanowire, and the nanowire in the stated order from the substrate. Previously presented
The composite nanostructure of claim 10, wherein the substrate is transparent and comprises polyethylene naphthalate, silicon oxide, aluminum oxide, or a combination thereof. Original
A nanoelectronic device comprising the composite nanostructure according to claim 10. Original
A hybrid nanostructure comprising: a nanowall; and a nanowire abutting the nanowall, wherein the nanowall and the nanowire comprise a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2, 2 -indium zin c oxide, gallium indium zin c oxide, AlI nN, a metal of Group 10, or a combination thereof, and wherein a thickness of the nanowall is about to about 100 nm and a diameter of the nanowire is about 5 to about 100 nm. Currently amended
The hybrid nanostructure of claim 19, further comprising a combination of the nanowall and the nanowire between both the nanowall and the nanowire, wherein the combination comprises a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V O 2, 2 -indium zin c oxide, gallium indium zin c oxide, A lI nN, a metal of Group 10, or a combination thereof. Currently amended
The hybrid nanostructure of claim 19, wherein the nanowall has a height of about 1 to about 100 pm, the nanowire has a length of about 1 to about 100 p m, and a direction of the height of the nanowall and a direction of the length of the nanowire are parallel. Original
A method of forming a hybrid nanostructure on graphene, the method comprising: providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure, wherein the nanomaterial comprises a ternary phase comprising Si, Ge, Sn or Pb; P, As, Sb or Bi; and S, Se or Te; V 0 2,, -indium zin c oxide, gallium indium zin c oxide, Al I nN, or a metal of Group 10, and wherein the hybrid nanostructure comprises a nanowall, a combination of a nanowall and a nanowire, and a nanowire in the stated order from the graphene layer. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
hybrid nanostructure on graphene (method product)
composite nanostructure
Materials described outside the worked examples.
ternary phase nanomaterial (Group IV-V-VI)
VO₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 2A through 2 C are field emission scanning electron micrographs ("FE- SEMs") of hybrid nanostructures prepared in Examples 1 through 3; [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
metal layer thickness (claimed range) | 0.5–5 nm | metal layer |
nanowall thickness (claimed range) | ≤ 100 nm |
Related documents with shared materials, methods, properties, or citations.
MATERIAL INCLUDING GRAPHENE AND AN INORGANIC MATERIAL AND METHOD OF MANUFACTURING THE MATERIAL
Synthesis and guided assembly of niobium trisulfide nanowires and nanowire chains by chemical vapor deposition
nanoelectronic device (direct current nanogenerator)
hybrid nanostructure (nanowall + nanowire)
gallium indium zinc oxide (GIZO)
AlInN
metal of Group 10
combination of nanomaterials
graphene
metal layer
gold
Au
polyethylene naphthalate
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
indium tin oxide
ITO
platinum
Pt
indium zinc tin oxide
FIGS. 4A through 4 C are graphs of intensity (arbitrary units, a.u.) versus scattering angle (degrees two-theta, 2 0) showing X-ray diffraction ("XRD") patterns …
FIGS. 5A through 5D are high resolution transmission electron micrographs ("HR-TEMs") of the composite nanostructure including the hybrid nanostructure of …
FIGS. 6A is a graph of current density (nanoamps per square centimeter, nA/cm2) versus time (seconds, sec) and 6B is a graph of voltage (millivolts, mV) versus …
FIGS. 7A and 7B are respectively an HR-TEM and a micro-energy dispersive spectroscopy ("p-EDS") spectrum, which is a graph of counts versus energy …
FIGS. 7A and 7B are respectively an HR-TEM and a micro-energy dispersive spectroscopy ("p-EDS") spectrum, which is a graph of counts versus energy …
nanowire diameter (claimed range) | 5–100 nm | ternary phase nanomaterial (Group IV-V-VI) |
nanowall height (claimed range) | 1–100 µm | ternary phase nanomaterial (Group IV-V-VI) |
nanowire length (claimed range) | 1–100 µm | ternary phase nanomaterial (Group IV-V-VI) |
Duration | 1800–7200 s | — |
Duration | 2400–6480 s | — |
Duration | 3000–5760 s | — |
Thickness | 0.05–1 nm | — |
Thickness | 10–900 nm | — |
Duration | 0.001–1000 hours | — |
Duration | 0.01–100 hours | — |
Duration | 0.1–10 hours | — |
Temperature | 20–80 °C | — |
Thickness | 0.7–4 nm | — |
Thickness | 1–3 nm | — |
Thickness | 10–80 nm | — |
Thickness | 15–60 nm | — |
Thickness | 10–60 nm | — |
Thickness | 1–10 nm | — |
Temperature | 800–950 °C | — |
nanoelectronic device (direct current nanogenerator)
hybrid nanostructure (nanowall + nanowire)
gallium indium zinc oxide (GIZO)
AlInN
metal of Group 10
combination of nanomaterials
graphene
metal layer
gold
Au
polyethylene naphthalate
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
indium tin oxide
ITO
platinum
Pt
indium zinc tin oxide
FIGS. 4A through 4 C are graphs of intensity (arbitrary units, a.u.) versus scattering angle (degrees two-theta, 2 0) showing X-ray diffraction ("XRD") patterns …
FIGS. 5A through 5D are high resolution transmission electron micrographs ("HR-TEMs") of the composite nanostructure including the hybrid nanostructure of …
FIGS. 6A is a graph of current density (nanoamps per square centimeter, nA/cm2) versus time (seconds, sec) and 6B is a graph of voltage (millivolts, mV) versus …
FIGS. 7A and 7B are respectively an HR-TEM and a micro-energy dispersive spectroscopy ("p-EDS") spectrum, which is a graph of counts versus energy …
FIGS. 7A and 7B are respectively an HR-TEM and a micro-energy dispersive spectroscopy ("p-EDS") spectrum, which is a graph of counts versus energy …
nanowire diameter (claimed range) | 5–100 nm | ternary phase nanomaterial (Group IV-V-VI) |
nanowall height (claimed range) | 1–100 µm | ternary phase nanomaterial (Group IV-V-VI) |
nanowire length (claimed range) | 1–100 µm | ternary phase nanomaterial (Group IV-V-VI) |
Duration | 1800–7200 s | — |
Duration | 2400–6480 s | — |
Duration | 3000–5760 s | — |
Thickness | 0.05–1 nm | — |
Thickness | 10–900 nm | — |
Duration | 0.001–1000 hours | — |
Duration | 0.01–100 hours | — |
Duration | 0.1–10 hours | — |
Temperature | 20–80 °C | — |
Thickness | 0.7–4 nm | — |
Thickness | 1–3 nm | — |
Thickness | 10–80 nm | — |
Thickness | 15–60 nm | — |
Thickness | 10–60 nm | — |
Thickness | 1–10 nm | — |
Temperature | 800–950 °C | — |
nanoelectronic device (direct current nanogenerator)
hybrid nanostructure (nanowall + nanowire)
gallium indium zinc oxide (GIZO)
AlInN
metal of Group 10
combination of nanomaterials
graphene
metal layer
gold
Au
polyethylene naphthalate
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
indium tin oxide
ITO
platinum
Pt
indium zinc tin oxide
FIGS. 4A through 4 C are graphs of intensity (arbitrary units, a.u.) versus scattering angle (degrees two-theta, 2 0) showing X-ray diffraction ("XRD") patterns …
FIGS. 5A through 5D are high resolution transmission electron micrographs ("HR-TEMs") of the composite nanostructure including the hybrid nanostructure of …
FIGS. 6A is a graph of current density (nanoamps per square centimeter, nA/cm2) versus time (seconds, sec) and 6B is a graph of voltage (millivolts, mV) versus …
FIGS. 7A and 7B are respectively an HR-TEM and a micro-energy dispersive spectroscopy ("p-EDS") spectrum, which is a graph of counts versus energy …
FIGS. 7A and 7B are respectively an HR-TEM and a micro-energy dispersive spectroscopy ("p-EDS") spectrum, which is a graph of counts versus energy …
nanowire diameter (claimed range) | 5–100 nm | ternary phase nanomaterial (Group IV-V-VI) |
nanowall height (claimed range) | 1–100 µm | ternary phase nanomaterial (Group IV-V-VI) |
nanowire length (claimed range) | 1–100 µm | ternary phase nanomaterial (Group IV-V-VI) |
Duration | 1800–7200 s | — |
Duration | 2400–6480 s | — |
Duration | 3000–5760 s | — |
Thickness | 0.05–1 nm | — |
Thickness | 10–900 nm | — |
Duration | 0.001–1000 hours | — |
Duration | 0.01–100 hours | — |
Duration | 0.1–10 hours | — |
Temperature | 20–80 °C | — |
Thickness | 0.7–4 nm | — |
Thickness | 1–3 nm | — |
Thickness | 10–80 nm | — |
Thickness | 15–60 nm | — |
Thickness | 10–60 nm | — |
Thickness | 1–10 nm | — |
Temperature | 800–950 °C | — |
nanoelectronic device (direct current nanogenerator)
hybrid nanostructure (nanowall + nanowire)
gallium indium zinc oxide (GIZO)
AlInN
metal of Group 10
combination of nanomaterials
graphene
metal layer
gold
Au
polyethylene naphthalate
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
indium tin oxide
ITO
platinum
Pt
indium zinc tin oxide
FIGS. 4A through 4 C are graphs of intensity (arbitrary units, a.u.) versus scattering angle (degrees two-theta, 2 0) showing X-ray diffraction ("XRD") patterns …
FIGS. 5A through 5D are high resolution transmission electron micrographs ("HR-TEMs") of the composite nanostructure including the hybrid nanostructure of …
FIGS. 6A is a graph of current density (nanoamps per square centimeter, nA/cm2) versus time (seconds, sec) and 6B is a graph of voltage (millivolts, mV) versus …
FIGS. 7A and 7B are respectively an HR-TEM and a micro-energy dispersive spectroscopy ("p-EDS") spectrum, which is a graph of counts versus energy …
FIGS. 7A and 7B are respectively an HR-TEM and a micro-energy dispersive spectroscopy ("p-EDS") spectrum, which is a graph of counts versus energy …
nanowire diameter (claimed range) | 5–100 nm | ternary phase nanomaterial (Group IV-V-VI) |
nanowall height (claimed range) | 1–100 µm | ternary phase nanomaterial (Group IV-V-VI) |
nanowire length (claimed range) | 1–100 µm | ternary phase nanomaterial (Group IV-V-VI) |
Duration | 1800–7200 s | — |
Duration | 2400–6480 s | — |
Duration | 3000–5760 s | — |
Thickness | 0.05–1 nm | — |
Thickness | 10–900 nm | — |
Duration | 0.001–1000 hours | — |
Duration | 0.01–100 hours | — |
Duration | 0.1–10 hours | — |
Temperature | 20–80 °C | — |
Thickness | 0.7–4 nm | — |
Thickness | 1–3 nm | — |
Thickness | 10–80 nm | — |
Thickness | 15–60 nm | — |
Thickness | 10–60 nm | — |
Thickness | 1–10 nm | — |
Temperature | 800–950 °C | — |