The method of claim 1, wherein forming the ohmic electrode layer further comprises: seguentially d e po s iting th c- conacMPt m e tal laye r, th c- rofloct-ivo m e tal laye r, and th c diffusion barri e r eporo thc gallium nitrid e ba no somicnductr Ipo; n performing a thermal treatment process-horcin thc- rofloctAivo metal layer is dopositod dirty on thc contact metal layer, and the diffusion b arri e r lay e r i n d e posit e d dir e ctly on th e reflection m e tal lay e r.

The method of claim 1, wherein forming the ohmic electrode layer further comprises: seguentially d e positing th c onac m e tal laye r, th c- rofloct-ivo m e tal laye r, th c diffusi on barri e r laye r, and th e b o nding mot al layeoon th e se m ico ndu c t o r layor; and performing a thermal treatment process, wherein the contact metal la y er, the reflective metal la y er, the diffusion barrier la y er, and the bondin g metal layer are sequentially de p osited on the semiconductor layerthe -Y efle -tive m e tal lay e r is dopositod dir ec tly on th c- conacMPt m e tal laye r, and th c diff -usionp baro lri d e po s it e d dircctl y on th e r e fl e ctiv e m e tal lacier.

The method of claim 1, wherein depositing the contact metal layer comprises depositing a first contact metal layer and depositing a second contact metal layer, and wherein the first contact metal layer comprises one of Ni, Pt, Pd, Au, Ti, Ru, W, Ta, V, C o, Os, Re, and Rh, and the second contact metal layer comprises Ir.

The method of claim 1, forming the ohmic electrode layer on the gallium nitride-based semiconductor layer comprises: depositing the contact metal layer directly on the gallium nitride-based semiconductor layer; 4 Application No.: to Office Action of depositing the metal layer; depositing the diffusion barrier layer bonding metal layer directly on the diffusion barrier layer directly on the first bonding metal layer. 12/952,928 Reply dated Response reflective metal layer directly on the contact directly on the reflective layer; depositing a first layer; and depositing a second bonding metal

The method of claim 1, wherein forming the ohmic electrode layer further comprises: seguentially d e po s iting th c- conacMPt m e tal laye r, th c- rofloct-ivo m e tal laye r, and th c diffusion barri e r eporo thc gallium nitrid e ba no somicnductr Ipo; n performing a thermal treatment process-horcin thc- rofloctAivo metal layer is dopositod dirty on thc contact metal layer, and the diffusion b arri e r lay e r i n d e posit e d dir e ctly on th e reflection m e tal lay e r.

The method of claim 1, wherein forming the ohmic electrode layer further comprises: seguentially d e positing th c onac m e tal laye r, th c- rofloct-ivo m e tal laye r, th c diffusi on barri e r laye r, and th e b o nding mot al layeoon th e se m ico ndu c t o r layor; and performing a thermal treatment process, wherein the contact metal la y er, the reflective metal la y er, the diffusion barrier la y er, and the bondin g metal layer are sequentially de p osited on the semiconductor layerthe -Y efle -tive m e tal lay e r is dopositod dir ec tly on th c- conacMPt m e tal laye r, and th c diff -usionp baro lri d e po s it e d dircctl y on th e r e fl e ctiv e m e tal lacier.

The method of claim 1, wherein depositing the contact metal layer comprises depositing a first contact metal layer and depositing a second contact metal layer, and wherein the first contact metal layer comprises one of Ni, Pt, Pd, Au, Ti, Ru, W, Ta, V, C o, Os, Re, and Rh, and the second contact metal layer comprises Ir.

The method of claim 1, forming the ohmic electrode layer on the gallium nitride-based semiconductor layer comprises: depositing the contact metal layer directly on the gallium nitride-based semiconductor layer; 4 Application No.: to Office Action of depositing the metal layer; depositing the diffusion barrier layer bonding metal layer directly on the diffusion barrier layer directly on the first bonding metal layer. 12/952,928 Reply dated Response reflective metal layer directly on the contact directly on the reflective layer; depositing a first layer; and depositing a second bonding metal

The method of claim 1, wherein forming the ohmic electrode layer further comprises: seguentially d e po s iting th c- conacMPt m e tal laye r, th c- rofloct-ivo m e tal laye r, and th c diffusion barri e r eporo thc gallium nitrid e ba no somicnductr Ipo; n performing a thermal treatment process-horcin thc- rofloctAivo metal layer is dopositod dirty on thc contact metal layer, and the diffusion b arri e r lay e r i n d e posit e d dir e ctly on th e reflection m e tal lay e r.

The method of claim 1, wherein forming the ohmic electrode layer further comprises: seguentially d e positing th c onac m e tal laye r, th c- rofloct-ivo m e tal laye r, th c diffusi on barri e r laye r, and th e b o nding mot al layeoon th e se m ico ndu c t o r layor; and performing a thermal treatment process, wherein the contact metal la y er, the reflective metal la y er, the diffusion barrier la y er, and the bondin g metal layer are sequentially de p osited on the semiconductor layerthe -Y efle -tive m e tal lay e r is dopositod dir ec tly on th c- conacMPt m e tal laye r, and th c diff -usionp baro lri d e po s it e d dircctl y on th e r e fl e ctiv e m e tal lacier.

The method of claim 1, wherein depositing the contact metal layer comprises depositing a first contact metal layer and depositing a second contact metal layer, and wherein the first contact metal layer comprises one of Ni, Pt, Pd, Au, Ti, Ru, W, Ta, V, C o, Os, Re, and Rh, and the second contact metal layer comprises Ir.

The method of claim 1, forming the ohmic electrode layer on the gallium nitride-based semiconductor layer comprises: depositing the contact metal layer directly on the gallium nitride-based semiconductor layer; 4 Application No.: to Office Action of depositing the metal layer; depositing the diffusion barrier layer bonding metal layer directly on the diffusion barrier layer directly on the first bonding metal layer. 12/952,928 Reply dated Response reflective metal layer directly on the contact directly on the reflective layer; depositing a first layer; and depositing a second bonding metal

The method of claim 1, wherein forming the ohmic electrode layer further comprises: seguentially d e po s iting th c- conacMPt m e tal laye r, th c- rofloct-ivo m e tal laye r, and th c diffusion barri e r eporo thc gallium nitrid e ba no somicnductr Ipo; n performing a thermal treatment process-horcin thc- rofloctAivo metal layer is dopositod dirty on thc contact metal layer, and the diffusion b arri e r lay e r i n d e posit e d dir e ctly on th e reflection m e tal lay e r.

The method of claim 1, wherein forming the ohmic electrode layer further comprises: seguentially d e positing th c onac m e tal laye r, th c- rofloct-ivo m e tal laye r, th c diffusi on barri e r laye r, and th e b o nding mot al layeoon th e se m ico ndu c t o r layor; and performing a thermal treatment process, wherein the contact metal la y er, the reflective metal la y er, the diffusion barrier la y er, and the bondin g metal layer are sequentially de p osited on the semiconductor layerthe -Y efle -tive m e tal lay e r is dopositod dir ec tly on th c- conacMPt m e tal laye r, and th c diff -usionp baro lri d e po s it e d dircctl y on th e r e fl e ctiv e m e tal lacier.

The method of claim 1, wherein depositing the contact metal layer comprises depositing a first contact metal layer and depositing a second contact metal layer, and wherein the first contact metal layer comprises one of Ni, Pt, Pd, Au, Ti, Ru, W, Ta, V, C o, Os, Re, and Rh, and the second contact metal layer comprises Ir.

The method of claim 1, forming the ohmic electrode layer on the gallium nitride-based semiconductor layer comprises: depositing the contact metal layer directly on the gallium nitride-based semiconductor layer; 4 Application No.: to Office Action of depositing the metal layer; depositing the diffusion barrier layer bonding metal layer directly on the diffusion barrier layer directly on the first bonding metal layer. 12/952,928 Reply dated Response reflective metal layer directly on the contact directly on the reflective layer; depositing a first layer; and depositing a second bonding metal