Patent
US 10,536,070DRIVER FOR SWITCHING GALLIUM NITRIDE (GAN) DEVICES
Roberto Penzo
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,536,070Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 in accordance with one or more techniques of this disclosure. [0015 1
FIG. 2 is a circuit diagram illustrating a first example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [
FIG. 3 is a circuit diagram illustrating a second example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [0011 1
FIG. 4 is a circuit diagram illustrating a third example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [0012]
FIG. 5 is a circuit diagram illustrating a fourth example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [0013]
FIG. 6 is a first illustration of a performance of the driver of
FIG. 7 is a second illustration of a performance of the driver of
FIG. 8 is a third illustration of a performance of the driver of FIG. I in accordance with one or more techniques of this disclosure. 1
FIG. 9 is a flow diagram for a method for driving GaN devices in accordance with one or more techniques of this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device for switching Gallium Nitride (GaN) devices, the device comprising: a high side driver adapted to control a high side GaN device using a high side supply, wherein the high side supply comprises a capacitor; a low side driver adapted to control a low side GaN device using a low side supply; and high side charge circuitry adapted to charge the high side supply with the low side supply when the low side driver activates the low side GaN device, wherein, to charge the high side supply, the high side charge circuitry is adapted to couple a gate of the low side GaN device to the capacitor of the high side supply such that the low side supply charges the capacitor of the high side supply when the low side driver activates the low side GaN device. Currently amended
The device of claim 1, wherein the high side charge circuitry is adapted to prevent current from flowing from the high side supply to the low side driver and to permit current to flow from the low side driver to the high side supply. Original
The device of claim 1, wherein the capacitor is a first capacitor and wherein the low side supply comprises a second capacitor coupled in parallel with a voltage sourc. Currently amended
The device of claim 1, comprising one or more of: low side discharge circuitry adapted to reduce current flow from the low side driver to the low side GaN device and to refrain from reducing current flow from the low side GaN device to the low side driver; or high side discharge circuitry adapted to reduce current flow from the high side driver to the high side GaN device and to refrain from reducing current flow from the high side GaN device to the high side driver. Original
The device of claim 1, wherein the low side driver is adapted to establish a first low side channel between a positive terminal of the low side supply and the low side GaN device to activate the low side GaN device and to establish a second low side channel between a negative terminal of the low side supply and the low side GaN device to deactivate the low side GaN device; and wherein the high side driver is adapted to establish a first high side channel between a positive terminal of the high side supply and the high side GaN device to activate the high side GaN device and to establish a second high side channel between a negative terminal of the high side supply and the low side GaN device to deactivate the high side GaN device. Original
The device of claim 1, wherein the high side GaN device comprises a control node coupled to the high side driver, a first node coupled to a positive terminal of a power converter supply, and a second node coupled to one or more converter elements for a power converter adapted to receive power from the power converter supply and output a regulated voltage or regulated current; and wherein the low side GaN device comprises a control node coupled to the low side driver, a first node coupled to the one or more converter elements, and a second node coupled to a negative terminal of the power converter supply. Original
A method for driving a Gallium Nitride (GaN) devices, the method comprising: controlling a high side GaN device using a high side supply, wherein the high side supply comprises a capacitor; controlling a low side GaN device using a low side supply; and charging the high side supply with the low side supply when the low side driver activates the low side GaN device, wherein charging the high side supply comprises coupling a gate of the low side GaN device to the capacitor of the high side supply such that the low side supply charges the capacitor of the high side supply when the low side driver activates the low side GaN device. Currently amended
The method of claim 11, wherein charging the high side supply comprises: preventing current from flowing from the high side supply to the low side driver; and permitting current to flow from the low side driver to the high side supply. Original
The method of claim 11, wherein the capacitor is a first capacitor and wherein the low side supply comprises a second capacitor coupled in parallel with a voltage source. Currently amended
The method of claim 11, wherein controlling the high side GaN device comprises reducing current flow from the high side driver to the high side GaN device and refraining from reducing current flow from the high side GaN device to the high side driver; and wherein controlling the low side GaN device comprises reducing current flow from the low side driver to the low side GaN device and refraining from reducing current flow from the low side GaN device to the low side driver. Original
The method of claim 11, wherein controlling the low side GaN device comprises establishing a first low side channel between a positive terminal of the low side supply and the low side GaN device to activate the low side GaN device and establishing a second low side channel between a negative terminal of the low side supply and the low side GaN device to deactivate the low side GaN device; and wherein controlling the high side GaN device comprises establishing a first high side channel between a positive terminal of the high side supply and the high side GaN device to activate the high side GaN device and establishing a second high side channel between a negative terminal of the high side supply and the high side GaN device to deactivate the high side GaN device. Original
The method of claim 11, wherein the high side GaN device comprises a control node coupled to the high side driver, a first node coupled to a positive terminal of a power converter supply, and a second node coupled to one or more converter elements for a power converter adapted to receive power from the power converter supply and output a regulated voltage or regulated current; and wherein the low side GaN device comprises a control node coupled to the low side driver, a first node coupled to the one or more converter elements, and a second node coupled to a negative terminal of the power converter supply. Original
A system for controlling a power converter, the system comprising: a high side GaN device; a low side GaN device; a high side driver adapted to control the high side GaN device using a high side supply, wherein the high side supply comprises a capacitor; a low side driver adapted to control the low side GaN device using a low side supply; and high side charge circuitry adapted to charge the high side supply with the low side supply when the low side driver activates the low side GaN device, wherein, to charge the high side supply, the high side charge circuitry is adapted to couple a gate of the low side GaN device to the capacitor of the high side supply such that the low side supply charges the capacitor of the high side supply when the low side driver activates the low side GaN device. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN half-bridge switching device with high side bootstrap charge circuitry
Materials described outside the worked examples.
Gallium Nitride (GaN) e-HEMT
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a first illustration of a performance of the driver of
Related documents with shared materials, methods, properties, or citations.
INTEGRATED GALLIUM NITRIDE POWER DEVICE WITH PROTECTION CIRCUITS
SYSTEMS AND METHODS FOR A RADIO FREQUENCY TRANSMITTER WITH IMPROVED LINEARITY AND POWER OUT UTILIZING PRE-DISTORTION AND A GAN (GALLIUM NITRIDE) POWER AMPLIFIER DEVICE
Patent
Atlas literature
Patent
US 10,536,070Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 in accordance with one or more techniques of this disclosure. [0015 1
FIG. 2 is a circuit diagram illustrating a first example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [
FIG. 3 is a circuit diagram illustrating a second example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [0011 1
FIG. 4 is a circuit diagram illustrating a third example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [0012]
FIG. 5 is a circuit diagram illustrating a fourth example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [0013]
FIG. 6 is a first illustration of a performance of the driver of
FIG. 7 is a second illustration of a performance of the driver of
FIG. 8 is a third illustration of a performance of the driver of FIG. I in accordance with one or more techniques of this disclosure. 1
FIG. 9 is a flow diagram for a method for driving GaN devices in accordance with one or more techniques of this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device for switching Gallium Nitride (GaN) devices, the device comprising: a high side driver adapted to control a high side GaN device using a high side supply, wherein the high side supply comprises a capacitor; a low side driver adapted to control a low side GaN device using a low side supply; and high side charge circuitry adapted to charge the high side supply with the low side supply when the low side driver activates the low side GaN device, wherein, to charge the high side supply, the high side charge circuitry is adapted to couple a gate of the low side GaN device to the capacitor of the high side supply such that the low side supply charges the capacitor of the high side supply when the low side driver activates the low side GaN device. Currently amended
The device of claim 1, wherein the high side charge circuitry is adapted to prevent current from flowing from the high side supply to the low side driver and to permit current to flow from the low side driver to the high side supply. Original
The device of claim 1, wherein the capacitor is a first capacitor and wherein the low side supply comprises a second capacitor coupled in parallel with a voltage sourc. Currently amended
The device of claim 1, comprising one or more of: low side discharge circuitry adapted to reduce current flow from the low side driver to the low side GaN device and to refrain from reducing current flow from the low side GaN device to the low side driver; or high side discharge circuitry adapted to reduce current flow from the high side driver to the high side GaN device and to refrain from reducing current flow from the high side GaN device to the high side driver. Original
The device of claim 1, wherein the low side driver is adapted to establish a first low side channel between a positive terminal of the low side supply and the low side GaN device to activate the low side GaN device and to establish a second low side channel between a negative terminal of the low side supply and the low side GaN device to deactivate the low side GaN device; and wherein the high side driver is adapted to establish a first high side channel between a positive terminal of the high side supply and the high side GaN device to activate the high side GaN device and to establish a second high side channel between a negative terminal of the high side supply and the low side GaN device to deactivate the high side GaN device. Original
The device of claim 1, wherein the high side GaN device comprises a control node coupled to the high side driver, a first node coupled to a positive terminal of a power converter supply, and a second node coupled to one or more converter elements for a power converter adapted to receive power from the power converter supply and output a regulated voltage or regulated current; and wherein the low side GaN device comprises a control node coupled to the low side driver, a first node coupled to the one or more converter elements, and a second node coupled to a negative terminal of the power converter supply. Original
A method for driving a Gallium Nitride (GaN) devices, the method comprising: controlling a high side GaN device using a high side supply, wherein the high side supply comprises a capacitor; controlling a low side GaN device using a low side supply; and charging the high side supply with the low side supply when the low side driver activates the low side GaN device, wherein charging the high side supply comprises coupling a gate of the low side GaN device to the capacitor of the high side supply such that the low side supply charges the capacitor of the high side supply when the low side driver activates the low side GaN device. Currently amended
The method of claim 11, wherein charging the high side supply comprises: preventing current from flowing from the high side supply to the low side driver; and permitting current to flow from the low side driver to the high side supply. Original
The method of claim 11, wherein the capacitor is a first capacitor and wherein the low side supply comprises a second capacitor coupled in parallel with a voltage source. Currently amended
The method of claim 11, wherein controlling the high side GaN device comprises reducing current flow from the high side driver to the high side GaN device and refraining from reducing current flow from the high side GaN device to the high side driver; and wherein controlling the low side GaN device comprises reducing current flow from the low side driver to the low side GaN device and refraining from reducing current flow from the low side GaN device to the low side driver. Original
The method of claim 11, wherein controlling the low side GaN device comprises establishing a first low side channel between a positive terminal of the low side supply and the low side GaN device to activate the low side GaN device and establishing a second low side channel between a negative terminal of the low side supply and the low side GaN device to deactivate the low side GaN device; and wherein controlling the high side GaN device comprises establishing a first high side channel between a positive terminal of the high side supply and the high side GaN device to activate the high side GaN device and establishing a second high side channel between a negative terminal of the high side supply and the high side GaN device to deactivate the high side GaN device. Original
The method of claim 11, wherein the high side GaN device comprises a control node coupled to the high side driver, a first node coupled to a positive terminal of a power converter supply, and a second node coupled to one or more converter elements for a power converter adapted to receive power from the power converter supply and output a regulated voltage or regulated current; and wherein the low side GaN device comprises a control node coupled to the low side driver, a first node coupled to the one or more converter elements, and a second node coupled to a negative terminal of the power converter supply. Original
A system for controlling a power converter, the system comprising: a high side GaN device; a low side GaN device; a high side driver adapted to control the high side GaN device using a high side supply, wherein the high side supply comprises a capacitor; a low side driver adapted to control the low side GaN device using a low side supply; and high side charge circuitry adapted to charge the high side supply with the low side supply when the low side driver activates the low side GaN device, wherein, to charge the high side supply, the high side charge circuitry is adapted to couple a gate of the low side GaN device to the capacitor of the high side supply such that the low side supply charges the capacitor of the high side supply when the low side driver activates the low side GaN device. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN half-bridge switching device with high side bootstrap charge circuitry
Materials described outside the worked examples.
Gallium Nitride (GaN) e-HEMT
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a first illustration of a performance of the driver of
Related documents with shared materials, methods, properties, or citations.
INTEGRATED GALLIUM NITRIDE POWER DEVICE WITH PROTECTION CIRCUITS
SYSTEMS AND METHODS FOR A RADIO FREQUENCY TRANSMITTER WITH IMPROVED LINEARITY AND POWER OUT UTILIZING PRE-DISTORTION AND A GAN (GALLIUM NITRIDE) POWER AMPLIFIER DEVICE
Patent
Atlas literature
Patent
US 10,536,070Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 in accordance with one or more techniques of this disclosure. [0015 1
FIG. 2 is a circuit diagram illustrating a first example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [
FIG. 3 is a circuit diagram illustrating a second example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [0011 1
FIG. 4 is a circuit diagram illustrating a third example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [0012]
FIG. 5 is a circuit diagram illustrating a fourth example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [0013]
FIG. 6 is a first illustration of a performance of the driver of
FIG. 7 is a second illustration of a performance of the driver of
FIG. 8 is a third illustration of a performance of the driver of FIG. I in accordance with one or more techniques of this disclosure. 1
FIG. 9 is a flow diagram for a method for driving GaN devices in accordance with one or more techniques of this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device for switching Gallium Nitride (GaN) devices, the device comprising: a high side driver adapted to control a high side GaN device using a high side supply, wherein the high side supply comprises a capacitor; a low side driver adapted to control a low side GaN device using a low side supply; and high side charge circuitry adapted to charge the high side supply with the low side supply when the low side driver activates the low side GaN device, wherein, to charge the high side supply, the high side charge circuitry is adapted to couple a gate of the low side GaN device to the capacitor of the high side supply such that the low side supply charges the capacitor of the high side supply when the low side driver activates the low side GaN device. Currently amended
The device of claim 1, wherein the high side charge circuitry is adapted to prevent current from flowing from the high side supply to the low side driver and to permit current to flow from the low side driver to the high side supply. Original
The device of claim 1, wherein the capacitor is a first capacitor and wherein the low side supply comprises a second capacitor coupled in parallel with a voltage sourc. Currently amended
The device of claim 1, comprising one or more of: low side discharge circuitry adapted to reduce current flow from the low side driver to the low side GaN device and to refrain from reducing current flow from the low side GaN device to the low side driver; or high side discharge circuitry adapted to reduce current flow from the high side driver to the high side GaN device and to refrain from reducing current flow from the high side GaN device to the high side driver. Original
The device of claim 1, wherein the low side driver is adapted to establish a first low side channel between a positive terminal of the low side supply and the low side GaN device to activate the low side GaN device and to establish a second low side channel between a negative terminal of the low side supply and the low side GaN device to deactivate the low side GaN device; and wherein the high side driver is adapted to establish a first high side channel between a positive terminal of the high side supply and the high side GaN device to activate the high side GaN device and to establish a second high side channel between a negative terminal of the high side supply and the low side GaN device to deactivate the high side GaN device. Original
The device of claim 1, wherein the high side GaN device comprises a control node coupled to the high side driver, a first node coupled to a positive terminal of a power converter supply, and a second node coupled to one or more converter elements for a power converter adapted to receive power from the power converter supply and output a regulated voltage or regulated current; and wherein the low side GaN device comprises a control node coupled to the low side driver, a first node coupled to the one or more converter elements, and a second node coupled to a negative terminal of the power converter supply. Original
A method for driving a Gallium Nitride (GaN) devices, the method comprising: controlling a high side GaN device using a high side supply, wherein the high side supply comprises a capacitor; controlling a low side GaN device using a low side supply; and charging the high side supply with the low side supply when the low side driver activates the low side GaN device, wherein charging the high side supply comprises coupling a gate of the low side GaN device to the capacitor of the high side supply such that the low side supply charges the capacitor of the high side supply when the low side driver activates the low side GaN device. Currently amended
The method of claim 11, wherein charging the high side supply comprises: preventing current from flowing from the high side supply to the low side driver; and permitting current to flow from the low side driver to the high side supply. Original
The method of claim 11, wherein the capacitor is a first capacitor and wherein the low side supply comprises a second capacitor coupled in parallel with a voltage source. Currently amended
The method of claim 11, wherein controlling the high side GaN device comprises reducing current flow from the high side driver to the high side GaN device and refraining from reducing current flow from the high side GaN device to the high side driver; and wherein controlling the low side GaN device comprises reducing current flow from the low side driver to the low side GaN device and refraining from reducing current flow from the low side GaN device to the low side driver. Original
The method of claim 11, wherein controlling the low side GaN device comprises establishing a first low side channel between a positive terminal of the low side supply and the low side GaN device to activate the low side GaN device and establishing a second low side channel between a negative terminal of the low side supply and the low side GaN device to deactivate the low side GaN device; and wherein controlling the high side GaN device comprises establishing a first high side channel between a positive terminal of the high side supply and the high side GaN device to activate the high side GaN device and establishing a second high side channel between a negative terminal of the high side supply and the high side GaN device to deactivate the high side GaN device. Original
The method of claim 11, wherein the high side GaN device comprises a control node coupled to the high side driver, a first node coupled to a positive terminal of a power converter supply, and a second node coupled to one or more converter elements for a power converter adapted to receive power from the power converter supply and output a regulated voltage or regulated current; and wherein the low side GaN device comprises a control node coupled to the low side driver, a first node coupled to the one or more converter elements, and a second node coupled to a negative terminal of the power converter supply. Original
A system for controlling a power converter, the system comprising: a high side GaN device; a low side GaN device; a high side driver adapted to control the high side GaN device using a high side supply, wherein the high side supply comprises a capacitor; a low side driver adapted to control the low side GaN device using a low side supply; and high side charge circuitry adapted to charge the high side supply with the low side supply when the low side driver activates the low side GaN device, wherein, to charge the high side supply, the high side charge circuitry is adapted to couple a gate of the low side GaN device to the capacitor of the high side supply such that the low side supply charges the capacitor of the high side supply when the low side driver activates the low side GaN device. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN half-bridge switching device with high side bootstrap charge circuitry
Materials described outside the worked examples.
Gallium Nitride (GaN) e-HEMT
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a first illustration of a performance of the driver of
Related documents with shared materials, methods, properties, or citations.
INTEGRATED GALLIUM NITRIDE POWER DEVICE WITH PROTECTION CIRCUITS
SYSTEMS AND METHODS FOR A RADIO FREQUENCY TRANSMITTER WITH IMPROVED LINEARITY AND POWER OUT UTILIZING PRE-DISTORTION AND A GAN (GALLIUM NITRIDE) POWER AMPLIFIER DEVICE
Patent
Atlas literature
Patent
US 10,536,070Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 in accordance with one or more techniques of this disclosure. [0015 1
FIG. 2 is a circuit diagram illustrating a first example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [
FIG. 3 is a circuit diagram illustrating a second example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [0011 1
FIG. 4 is a circuit diagram illustrating a third example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [0012]
FIG. 5 is a circuit diagram illustrating a fourth example of the driver of FIG. I in accordance with one or more techniques of this disclosure. [0013]
FIG. 6 is a first illustration of a performance of the driver of
FIG. 7 is a second illustration of a performance of the driver of
FIG. 8 is a third illustration of a performance of the driver of FIG. I in accordance with one or more techniques of this disclosure. 1
FIG. 9 is a flow diagram for a method for driving GaN devices in accordance with one or more techniques of this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device for switching Gallium Nitride (GaN) devices, the device comprising: a high side driver adapted to control a high side GaN device using a high side supply, wherein the high side supply comprises a capacitor; a low side driver adapted to control a low side GaN device using a low side supply; and high side charge circuitry adapted to charge the high side supply with the low side supply when the low side driver activates the low side GaN device, wherein, to charge the high side supply, the high side charge circuitry is adapted to couple a gate of the low side GaN device to the capacitor of the high side supply such that the low side supply charges the capacitor of the high side supply when the low side driver activates the low side GaN device. Currently amended
The device of claim 1, wherein the high side charge circuitry is adapted to prevent current from flowing from the high side supply to the low side driver and to permit current to flow from the low side driver to the high side supply. Original
The device of claim 1, wherein the capacitor is a first capacitor and wherein the low side supply comprises a second capacitor coupled in parallel with a voltage sourc. Currently amended
The device of claim 1, comprising one or more of: low side discharge circuitry adapted to reduce current flow from the low side driver to the low side GaN device and to refrain from reducing current flow from the low side GaN device to the low side driver; or high side discharge circuitry adapted to reduce current flow from the high side driver to the high side GaN device and to refrain from reducing current flow from the high side GaN device to the high side driver. Original
The device of claim 1, wherein the low side driver is adapted to establish a first low side channel between a positive terminal of the low side supply and the low side GaN device to activate the low side GaN device and to establish a second low side channel between a negative terminal of the low side supply and the low side GaN device to deactivate the low side GaN device; and wherein the high side driver is adapted to establish a first high side channel between a positive terminal of the high side supply and the high side GaN device to activate the high side GaN device and to establish a second high side channel between a negative terminal of the high side supply and the low side GaN device to deactivate the high side GaN device. Original
The device of claim 1, wherein the high side GaN device comprises a control node coupled to the high side driver, a first node coupled to a positive terminal of a power converter supply, and a second node coupled to one or more converter elements for a power converter adapted to receive power from the power converter supply and output a regulated voltage or regulated current; and wherein the low side GaN device comprises a control node coupled to the low side driver, a first node coupled to the one or more converter elements, and a second node coupled to a negative terminal of the power converter supply. Original
A method for driving a Gallium Nitride (GaN) devices, the method comprising: controlling a high side GaN device using a high side supply, wherein the high side supply comprises a capacitor; controlling a low side GaN device using a low side supply; and charging the high side supply with the low side supply when the low side driver activates the low side GaN device, wherein charging the high side supply comprises coupling a gate of the low side GaN device to the capacitor of the high side supply such that the low side supply charges the capacitor of the high side supply when the low side driver activates the low side GaN device. Currently amended
The method of claim 11, wherein charging the high side supply comprises: preventing current from flowing from the high side supply to the low side driver; and permitting current to flow from the low side driver to the high side supply. Original
The method of claim 11, wherein the capacitor is a first capacitor and wherein the low side supply comprises a second capacitor coupled in parallel with a voltage source. Currently amended
The method of claim 11, wherein controlling the high side GaN device comprises reducing current flow from the high side driver to the high side GaN device and refraining from reducing current flow from the high side GaN device to the high side driver; and wherein controlling the low side GaN device comprises reducing current flow from the low side driver to the low side GaN device and refraining from reducing current flow from the low side GaN device to the low side driver. Original
The method of claim 11, wherein controlling the low side GaN device comprises establishing a first low side channel between a positive terminal of the low side supply and the low side GaN device to activate the low side GaN device and establishing a second low side channel between a negative terminal of the low side supply and the low side GaN device to deactivate the low side GaN device; and wherein controlling the high side GaN device comprises establishing a first high side channel between a positive terminal of the high side supply and the high side GaN device to activate the high side GaN device and establishing a second high side channel between a negative terminal of the high side supply and the high side GaN device to deactivate the high side GaN device. Original
The method of claim 11, wherein the high side GaN device comprises a control node coupled to the high side driver, a first node coupled to a positive terminal of a power converter supply, and a second node coupled to one or more converter elements for a power converter adapted to receive power from the power converter supply and output a regulated voltage or regulated current; and wherein the low side GaN device comprises a control node coupled to the low side driver, a first node coupled to the one or more converter elements, and a second node coupled to a negative terminal of the power converter supply. Original
A system for controlling a power converter, the system comprising: a high side GaN device; a low side GaN device; a high side driver adapted to control the high side GaN device using a high side supply, wherein the high side supply comprises a capacitor; a low side driver adapted to control the low side GaN device using a low side supply; and high side charge circuitry adapted to charge the high side supply with the low side supply when the low side driver activates the low side GaN device, wherein, to charge the high side supply, the high side charge circuitry is adapted to couple a gate of the low side GaN device to the capacitor of the high side supply such that the low side supply charges the capacitor of the high side supply when the low side driver activates the low side GaN device. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN half-bridge switching device with high side bootstrap charge circuitry
Materials described outside the worked examples.
Gallium Nitride (GaN) e-HEMT
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a first illustration of a performance of the driver of
Related documents with shared materials, methods, properties, or citations.
INTEGRATED GALLIUM NITRIDE POWER DEVICE WITH PROTECTION CIRCUITS
SYSTEMS AND METHODS FOR A RADIO FREQUENCY TRANSMITTER WITH IMPROVED LINEARITY AND POWER OUT UTILIZING PRE-DISTORTION AND A GAN (GALLIUM NITRIDE) POWER AMPLIFIER DEVICE
FIG. 7 is a second illustration of a performance of the driver of
FIG. 8 is a third illustration of a performance of the driver of FIG. I in accordance with one or more techniques of this disclosure. 1
FIG. 7 is a second illustration of a performance of the driver of
FIG. 8 is a third illustration of a performance of the driver of FIG. I in accordance with one or more techniques of this disclosure. 1
FIG. 7 is a second illustration of a performance of the driver of
FIG. 8 is a third illustration of a performance of the driver of FIG. I in accordance with one or more techniques of this disclosure. 1
FIG. 7 is a second illustration of a performance of the driver of
FIG. 8 is a third illustration of a performance of the driver of FIG. I in accordance with one or more techniques of this disclosure. 1