Patent
US 9,184,244HIGH VOLTAGE GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Naoki KANEDA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,184,244Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 is a cross-sectional view schematically showing a p-n junction diode manufactured by Example;
FIG.2 is a graph showing current-voltage characteristic when a reverse bias 20 voltage is applied to the p-n junction diode in which a drift layer does not …
FIG.3 is a graph showing an electric field distribution when a reverse bias voltage of 3000 V is applied to the p-n junction diode shown in
FIG.4 is a graph showing a relationship between the maximum electric field intensity applied to the drift layer having a high compensation ratio and a current …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 1. A high voltage gallium nitride based semiconductor device, comprising: 2 an n-type gallium nitride freestanding substrate, and 3 an n-type gallium nitride based semiconductor layer including a drift layer formed 4 on the surface of the n-type gallium nitride freestanding substrate so as to have a reverse 5 breakdown voltage of not less than 3000 V, 6 wherein the drift layer is configured such that a carbon concentration is not less 7 than 3.0 x1016/cm3 in a region which has an electric field intensity of not more than 1.5 8 MV/cm when a maximum allowable voltage where there occurs no breakdown 9 phenomenon is applied as a reverse bias voltage.
1 2. The high voltage gallium nitride based semiconductor device according to claim 1, 2 wherein the drift layer has a thickness of not less than 10 pm.
1 3. A manufacturing method of a high voltage gallium nitride based semiconductor device 2 including an n-type gallium nitride freestanding substrate, and an n-type gallium nitride 3 based semiconductor layer including a drift layer formed on the su r face of the n-type 4 gallium nitride freestanding substrate so as to have a reverse breakdown voltage of not less 5 than 3000 V, the manufacturing method comprising: 6 in epitaxially growing a region of the drift layer which has an electric field 7 intensity of not more than 1.5 MV/cm when the maximum allowable voltage where there 8 occurs no breakdown phenomenon is applied as a reverse bias voltage, setting a growth 9 temperature to not less than 1000 degrees C and not more than 1200 degrees C, a growth 10 pressure to not less than 30 kPa and not more than 70 kPa, and a ratio of V/I II to not less 11 than 2000 and not more than 8000, so that a carbon concentration of the region is not less 12 than 3.0 x106/cm3.
Layer stacks claimed or described, ordered top of device to substrate.
high voltage gallium nitride based semiconductor device
Materials described outside the worked examples.
n-type gallium nitride freestanding substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG.2 is a graph showing current-voltage characteristic when a reverse bias 20 voltage is applied to the p-n junction diode in which a drift layer does not …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Reverse Breakdown Voltage | ≥ 3000 V | GaN |
Related documents with shared materials, methods, properties, or citations.
SYSTEMS AND METHODS FOR A RADIO FREQUENCY TRANSMITTER WITH IMPROVED LINEARITY AND POWER OUT UTILIZING PRE-DISTORTION AND A GAN (GALLIUM NITRIDE) POWER AMPLIFIER DEVICE
KNOWLEDGE AGGREGATION FOR GAN-BASED ANOMALY DETECTORS
Patent
Atlas literature
Patent
US 9,184,244Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 is a cross-sectional view schematically showing a p-n junction diode manufactured by Example;
FIG.2 is a graph showing current-voltage characteristic when a reverse bias 20 voltage is applied to the p-n junction diode in which a drift layer does not …
FIG.3 is a graph showing an electric field distribution when a reverse bias voltage of 3000 V is applied to the p-n junction diode shown in
FIG.4 is a graph showing a relationship between the maximum electric field intensity applied to the drift layer having a high compensation ratio and a current …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 1. A high voltage gallium nitride based semiconductor device, comprising: 2 an n-type gallium nitride freestanding substrate, and 3 an n-type gallium nitride based semiconductor layer including a drift layer formed 4 on the surface of the n-type gallium nitride freestanding substrate so as to have a reverse 5 breakdown voltage of not less than 3000 V, 6 wherein the drift layer is configured such that a carbon concentration is not less 7 than 3.0 x1016/cm3 in a region which has an electric field intensity of not more than 1.5 8 MV/cm when a maximum allowable voltage where there occurs no breakdown 9 phenomenon is applied as a reverse bias voltage.
1 2. The high voltage gallium nitride based semiconductor device according to claim 1, 2 wherein the drift layer has a thickness of not less than 10 pm.
1 3. A manufacturing method of a high voltage gallium nitride based semiconductor device 2 including an n-type gallium nitride freestanding substrate, and an n-type gallium nitride 3 based semiconductor layer including a drift layer formed on the su r face of the n-type 4 gallium nitride freestanding substrate so as to have a reverse breakdown voltage of not less 5 than 3000 V, the manufacturing method comprising: 6 in epitaxially growing a region of the drift layer which has an electric field 7 intensity of not more than 1.5 MV/cm when the maximum allowable voltage where there 8 occurs no breakdown phenomenon is applied as a reverse bias voltage, setting a growth 9 temperature to not less than 1000 degrees C and not more than 1200 degrees C, a growth 10 pressure to not less than 30 kPa and not more than 70 kPa, and a ratio of V/I II to not less 11 than 2000 and not more than 8000, so that a carbon concentration of the region is not less 12 than 3.0 x106/cm3.
Layer stacks claimed or described, ordered top of device to substrate.
high voltage gallium nitride based semiconductor device
Materials described outside the worked examples.
n-type gallium nitride freestanding substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG.2 is a graph showing current-voltage characteristic when a reverse bias 20 voltage is applied to the p-n junction diode in which a drift layer does not …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Reverse Breakdown Voltage | ≥ 3000 V | GaN |
Related documents with shared materials, methods, properties, or citations.
SYSTEMS AND METHODS FOR A RADIO FREQUENCY TRANSMITTER WITH IMPROVED LINEARITY AND POWER OUT UTILIZING PRE-DISTORTION AND A GAN (GALLIUM NITRIDE) POWER AMPLIFIER DEVICE
KNOWLEDGE AGGREGATION FOR GAN-BASED ANOMALY DETECTORS
Patent
Atlas literature
Patent
US 9,184,244Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 is a cross-sectional view schematically showing a p-n junction diode manufactured by Example;
FIG.2 is a graph showing current-voltage characteristic when a reverse bias 20 voltage is applied to the p-n junction diode in which a drift layer does not …
FIG.3 is a graph showing an electric field distribution when a reverse bias voltage of 3000 V is applied to the p-n junction diode shown in
FIG.4 is a graph showing a relationship between the maximum electric field intensity applied to the drift layer having a high compensation ratio and a current …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 1. A high voltage gallium nitride based semiconductor device, comprising: 2 an n-type gallium nitride freestanding substrate, and 3 an n-type gallium nitride based semiconductor layer including a drift layer formed 4 on the surface of the n-type gallium nitride freestanding substrate so as to have a reverse 5 breakdown voltage of not less than 3000 V, 6 wherein the drift layer is configured such that a carbon concentration is not less 7 than 3.0 x1016/cm3 in a region which has an electric field intensity of not more than 1.5 8 MV/cm when a maximum allowable voltage where there occurs no breakdown 9 phenomenon is applied as a reverse bias voltage.
1 2. The high voltage gallium nitride based semiconductor device according to claim 1, 2 wherein the drift layer has a thickness of not less than 10 pm.
1 3. A manufacturing method of a high voltage gallium nitride based semiconductor device 2 including an n-type gallium nitride freestanding substrate, and an n-type gallium nitride 3 based semiconductor layer including a drift layer formed on the su r face of the n-type 4 gallium nitride freestanding substrate so as to have a reverse breakdown voltage of not less 5 than 3000 V, the manufacturing method comprising: 6 in epitaxially growing a region of the drift layer which has an electric field 7 intensity of not more than 1.5 MV/cm when the maximum allowable voltage where there 8 occurs no breakdown phenomenon is applied as a reverse bias voltage, setting a growth 9 temperature to not less than 1000 degrees C and not more than 1200 degrees C, a growth 10 pressure to not less than 30 kPa and not more than 70 kPa, and a ratio of V/I II to not less 11 than 2000 and not more than 8000, so that a carbon concentration of the region is not less 12 than 3.0 x106/cm3.
Layer stacks claimed or described, ordered top of device to substrate.
high voltage gallium nitride based semiconductor device
Materials described outside the worked examples.
n-type gallium nitride freestanding substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG.2 is a graph showing current-voltage characteristic when a reverse bias 20 voltage is applied to the p-n junction diode in which a drift layer does not …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Reverse Breakdown Voltage | ≥ 3000 V | GaN |
Related documents with shared materials, methods, properties, or citations.
SYSTEMS AND METHODS FOR A RADIO FREQUENCY TRANSMITTER WITH IMPROVED LINEARITY AND POWER OUT UTILIZING PRE-DISTORTION AND A GAN (GALLIUM NITRIDE) POWER AMPLIFIER DEVICE
KNOWLEDGE AGGREGATION FOR GAN-BASED ANOMALY DETECTORS
Patent
Atlas literature
Patent
US 9,184,244Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 is a cross-sectional view schematically showing a p-n junction diode manufactured by Example;
FIG.2 is a graph showing current-voltage characteristic when a reverse bias 20 voltage is applied to the p-n junction diode in which a drift layer does not …
FIG.3 is a graph showing an electric field distribution when a reverse bias voltage of 3000 V is applied to the p-n junction diode shown in
FIG.4 is a graph showing a relationship between the maximum electric field intensity applied to the drift layer having a high compensation ratio and a current …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 1. A high voltage gallium nitride based semiconductor device, comprising: 2 an n-type gallium nitride freestanding substrate, and 3 an n-type gallium nitride based semiconductor layer including a drift layer formed 4 on the surface of the n-type gallium nitride freestanding substrate so as to have a reverse 5 breakdown voltage of not less than 3000 V, 6 wherein the drift layer is configured such that a carbon concentration is not less 7 than 3.0 x1016/cm3 in a region which has an electric field intensity of not more than 1.5 8 MV/cm when a maximum allowable voltage where there occurs no breakdown 9 phenomenon is applied as a reverse bias voltage.
1 2. The high voltage gallium nitride based semiconductor device according to claim 1, 2 wherein the drift layer has a thickness of not less than 10 pm.
1 3. A manufacturing method of a high voltage gallium nitride based semiconductor device 2 including an n-type gallium nitride freestanding substrate, and an n-type gallium nitride 3 based semiconductor layer including a drift layer formed on the su r face of the n-type 4 gallium nitride freestanding substrate so as to have a reverse breakdown voltage of not less 5 than 3000 V, the manufacturing method comprising: 6 in epitaxially growing a region of the drift layer which has an electric field 7 intensity of not more than 1.5 MV/cm when the maximum allowable voltage where there 8 occurs no breakdown phenomenon is applied as a reverse bias voltage, setting a growth 9 temperature to not less than 1000 degrees C and not more than 1200 degrees C, a growth 10 pressure to not less than 30 kPa and not more than 70 kPa, and a ratio of V/I II to not less 11 than 2000 and not more than 8000, so that a carbon concentration of the region is not less 12 than 3.0 x106/cm3.
Layer stacks claimed or described, ordered top of device to substrate.
high voltage gallium nitride based semiconductor device
Materials described outside the worked examples.
n-type gallium nitride freestanding substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG.2 is a graph showing current-voltage characteristic when a reverse bias 20 voltage is applied to the p-n junction diode in which a drift layer does not …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Reverse Breakdown Voltage | ≥ 3000 V | GaN |
Related documents with shared materials, methods, properties, or citations.
SYSTEMS AND METHODS FOR A RADIO FREQUENCY TRANSMITTER WITH IMPROVED LINEARITY AND POWER OUT UTILIZING PRE-DISTORTION AND A GAN (GALLIUM NITRIDE) POWER AMPLIFIER DEVICE
KNOWLEDGE AGGREGATION FOR GAN-BASED ANOMALY DETECTORS
FIG.3 is a graph showing an electric field distribution when a reverse bias voltage of 3000 V is applied to the p-n junction diode shown in
FIG.4 is a graph showing a relationship between the maximum electric field intensity applied to the drift layer having a high compensation ratio and a current …
| >=3.0e16 /cm3 |
GaN |
Voltage | ≤ 3000 V | — |
Pressure | ≤ 10 kPa | — |
Pressure | ≤ 30 kPa | — |
Pressure | ≤ 90 kPa | — |
Pressure | ≥ 10 kPa | — |
Pressure | ≥ 70 kPa | — |
FIG.3 is a graph showing an electric field distribution when a reverse bias voltage of 3000 V is applied to the p-n junction diode shown in
FIG.4 is a graph showing a relationship between the maximum electric field intensity applied to the drift layer having a high compensation ratio and a current …
| >=3.0e16 /cm3 |
GaN |
Voltage | ≤ 3000 V | — |
Pressure | ≤ 10 kPa | — |
Pressure | ≤ 30 kPa | — |
Pressure | ≤ 90 kPa | — |
Pressure | ≥ 10 kPa | — |
Pressure | ≥ 70 kPa | — |
FIG.3 is a graph showing an electric field distribution when a reverse bias voltage of 3000 V is applied to the p-n junction diode shown in
FIG.4 is a graph showing a relationship between the maximum electric field intensity applied to the drift layer having a high compensation ratio and a current …
| >=3.0e16 /cm3 |
GaN |
Voltage | ≤ 3000 V | — |
Pressure | ≤ 10 kPa | — |
Pressure | ≤ 30 kPa | — |
Pressure | ≤ 90 kPa | — |
Pressure | ≥ 10 kPa | — |
Pressure | ≥ 70 kPa | — |
FIG.3 is a graph showing an electric field distribution when a reverse bias voltage of 3000 V is applied to the p-n junction diode shown in
FIG.4 is a graph showing a relationship between the maximum electric field intensity applied to the drift layer having a high compensation ratio and a current …
| >=3.0e16 /cm3 |
GaN |
Voltage | ≤ 3000 V | — |
Pressure | ≤ 10 kPa | — |
Pressure | ≤ 30 kPa | — |
Pressure | ≤ 90 kPa | — |
Pressure | ≥ 10 kPa | — |
Pressure | ≥ 70 kPa | — |