Title: POLISHING METHOD, POLISHING APPARATUS AND GaN WAFER -

and TZ

Patent

Atlas literature

Patent

US 9,233,449

Title: POLISHING METHOD, POLISHING APPARATUS AND GaN WAFER -

SANO, Yasuhisa, YAMAUCHI, Kazuto, MURATA, Junji, SADAKUNI, Shun et al.

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1B. While thus producing the Ga oxide (Ga₂ 0 3) 16a on the surface (lower surface) of the GaN substrate 16 by irradiating the WO 2010/110463 …

FIG. 2

FIG. 2 is a diagram illustrating the procedure of Demonstration Experiment 1;

FIG. 3

performance graph

FIG. 3 is a graph showing the results of Demonstration Experiment 1; 30

FIG. 4

FIG. 4 is a diagram showing an optical microscopic image of a surface of a GaN substrate before light irradiation in Demonstration Experiment 2;

FIG. 5

FIG. 5 15B, the polished surface of the substrate will be free of streaks. In operation of the polishing apparatus 30 C or 30D, the substrate 142, such as a …

FIG. 6

FIG. 6 is a diagram showing an optical microscopic image of a surface of a GaN substrate after light irradiation in 5 Comparative Experiment;

FIG. 7

FIG. 7, between the lapping apparatus 30A and CMP apparatus 30B and the cleaning section 4 is disposed a ﬁrst 15 linear transporter 5 as a second (translatory) …

FIG. 8

FIG. 8, the polishing apparatuses 30 C, 30D according to the present invention each include a container 132 for holding therein a processing solution 130 …

FIG. 9

FIG. 9 is an enlarged cross-sectional view of a substrate holder of the polishing apparatus shown in

FIG. 10

FIG. 10 is an enlarged cross-sectional view of a polishing tool of the polishing apparatus shown in

FIG. 11

FIG. 11, it is also possible to provide a metal wire 156 of, e.g., gold or platinum in the bottoms of the grooves 15 134 provided in the upper surface of the …

FIG. 12

FIG. 12, it is preferred to divide the grooves 134a, provided in the upper surface of the polishing tool 134, e.g., into zones A to E in the radial direction …

FIG. 13

FIG. 13A is a diagram showing the cross-sectional conﬁguration of a surface of a substrate after it is polished 20 by a polishing tool having a PV surface …

FIG. 14

FIG. 14A is a diagram showing the cross-sectional conﬁguration of a surface of a substrate after it is polished 25 by a polishing tool having a PV surface …

FIG. 15

FIG. 15A is a diagram showing the cross-sectional conﬁguration of a surface of a substrate after it is polished 30 by a polishing tool having a PV surface …

FIG. 16

FIG. 16A. Thus, processing of the surface of the substrate 142 can be carried out while applying a suﬃciently high bias voltage 25 to the substrate 142 so as …

FIG. 17

FIGS. 17 and 18 show optical microscopic images of the surface of the GaN substrate after processing. [Comparative Examples 1-4 1 15 Polishing of a surface of …

FIG. 18

FIG. 18 is a diagram showing an optical microscopic image 5 of the surface of the GaN substrate after processing in Example 1;

FIG. 19

FIGS. 19 and 20 show optical microscopic images of the surfaces of the GaN substrates after processing in Comp. Examples 1 and 2. Polishing of a surface of a …

FIG. 20

FIG. 20 is a diagram showing an optical microscopic image of a surface of a GaN substrate after processing in Comp. Example 2;

FIG. 21

FIGS. 21 and 22 show optical microscopic images of the surfaces of the GaN substrates after processing in Comp. Examples 3 and 4. As can be seen from

FIG. 22

FIG. 22 is a diagram showing an optical microscopic image of a surface of a GaN substrate after processing in Comp. Example 4;

FIG. 23

FIG. 23. On the other hand, the Ga ion concentration of a processing solution is preferably not more than 100 ppm, because a processing solution can turn into …

FIG. 24

FIG. 24 is a diagram showing an optical microscopic image of a surface of a GaN substrate after processing in Comp. Example 6; and 25

FIG. 25

performance graph

FIG. 25 is a graph showing the relationship between Ga ion (Ga 3 ion) concentration and polishing rate (removal rate). Best Mode for Carrying Out the Invention …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

23 independent · 5 dependent

1
IndependentGa element-containing compound semiconductor substratebuffer solution containing Ga ionsGa₂O₃
A polishing method comprising: preparing a Ga element-containing compound semiconductor substrate, whose surface has raised portions and recessed portions; immersing the substrate in a processing solution comprising a buﬀer solution containing Ga ions, a concentration of the Ga ions being in a range of 10 ppm to 100 ppm, and the buﬀer solution having a pH in a range of 6 to 8; irradiating the surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide on the surface of the substrate in the processing solution; and rotating the substrate and a polishing tool with respect to each other to selectively polish and remove the Ga oxide formed on the raised portions of the surface of the substrate, wherein the processing solution contains oxygen dissolved therein, and wherein the processing solution does not comprise nitrogen dissolved from any Ga element-containing compound semiconductor substrate.
1. 5
  Dependent← claim 1
  The polishing method according to claim 1, wherein the polishing tool has an acidic or basic solid catalyst at least in a surface area which comes into contact with or close to the substrate.
2. 6
  Dependent← claim 1metal oxide particles, diamond particles, or catalyst particles with acidic or basic functional groups
  The polishing method according to claim 1, wherein the processing solution further comprises metal oxide particles, diamond particles, or catalyst particles whose surfaces are modiﬁed with an acidic or basic functional group, or a mixture of these particles. withdrawn
3. 7
  Dependent← claim 1
  The polishing method according to claim 1, an oxidizing agent.
4. 8
  Dependent← claim 1
  The polishing method according to claim 1, tool, which comes into contact with or close to the desired ﬂatness and appropriate roughness.
5. 28
  Dependent← claim 1
  The polishing method according to claim 1, solution prior to immersing the substrate in the wherein the processing solution further comprises wherein at least a surface area of the polishing substrate, has been conditioned to have further comprising: preparing the processing processing solution. 3
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Materials

Materials described outside the worked examples.

Ga element-containing compound semiconductor substrate

Substrate To Be Polished

buffer solution containing Ga ions

Processing Solution

Process steps

Additional fabrication and treatment steps described in the patent.

Electrochemical Mechanical Polishing

Step 1

Process details

activation:light irradiation and/or bias potential

dissolved oxygen:required

temperature c max:100

temperature c min:10

buffer solution pH:

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

device performance measurement

Device Performance Measurement

FIG. 3 is a graph showing the results of Demonstration Experiment 1; 30

Figure references

FIG. 3

GaNGaN

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	≤ 5 nm	—
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Title: POLISHING METHOD, POLISHING APPARATUS AND GaN WAFER - | Matter42 Literature