Patent
US 8,187,507GaN Crystal Producing Method, GaN Crystal, GaN Crystal substrate, Semiconductor Device and GaN Crystal Producing Apparatus
Yusuke Mori
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,187,507Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram showing the structure of an exemplary semiconductor device. [
FIG. 2. In this case, a side surface 32 of the GaN crystal 3 is a c -plane. By contrast, when the front surface (upper surface) of the GaN crystal layer on the …
FIG. 3. This is because if the front 12 surface of the GaN crystal layer 2 is a c-plane, the GaN crystal 3 on the GaN crystal layer 2 is grown on both its …
FIG. 4 shows a photograph of the GaN crystal when the proportion of added carbon was 1 at. %.
FIG. 5 shows a photograph of the GaN crystal when the proportion of added carbon was 5 at.%.
FIG. 6 shows a photograph 30 of the GaN crystal when the proportion of added carbon was 0 at.% 21 (Comparative Example 1). As shown in
FIG. 7 is a graph showing the relationship between the proportion of added carbon and the yield of a crystal in Example 1 and Comparative Example 1. 25 [
FIG. 8 is a graph showing an example of the relationship between the pressure of nitrogen gas and the thickness (film thickness) of a GaN crystal. [
FIG. 9. In
FIG. 10. In
FIG. 11. Specifically, a sapphire substrate on which a thin GaN film layer (its upper surface being a c- plane) was provided was initially placed in an alumina …
FIG. 12 shows a photograph of this single GaN crystal. The GaN crystal of this example is the world's largest single GaN 30 crystal that has ever been …
FIG. 13. As shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, comprising: a preparation step of preparing the melt by adding the alkali metal, the gallium, and carbon to a crucible and then heating the crucible; an adjustment step of adjusting a carbon content of the melt; and a reaction step of causing the gallium and nitrogen to react with each other, wherein forming a crystal nucleus other than a seed crystal is prevented by adjusting the carbon content of the melt, and the carbon content is adjusted to be in a range of 0.1 to 5 atom % relative to a total of the melt, the gallium, and the carbon.
The GaN crystal producing method according to claim 1, wherein the adjustment step includes at least one of a removal step of removing a portion of carbon in the melt and an addition step of adding carbon into the melt.
The GaN crystal producing method according to claim 1, comprising: a seed crystal providing step of providing a seed crystal in the melt, wherein the seed crystal is a GaN crystal.
The GaN crystal producing method according to claim 1, wherein the carbon is at least one of carbon and a carbon compound.
The GaN crystal producing method according to claim 1, wherein a non-polar surface of the GaN crystal is grown by adjusting the carbon content of the melt.
The GaN crystal producing method according to claim 1, wherein the melt contains Na.
The GaN crystal producing method according to claim 1, further comprising: an agitation step of agitating the melt.
9.
-15.
A GaN crystal, wherein the GaN crystal has a non-polar surface as a major surface thereof, a full width at half maximum of a rocking curve of double-crystal X-ray diffraction within a range of more than 0 seconds to 200 seconds or less, and a dislocation density within a range of more than 0/cm2 and 106/cm 2 or less, wherein the GaN crystal is produced by method comprising: 3 S/N 12/514836 Responsive to the Office Action dated and the Advisory Action dated a preparation step of preparing a melt by adding an alkali metal, gallium, and carbon to a crucible and then heating the crucible; an adjustment step of adjusting a carbon content of the melt; and a reaction step of causing the gallium and nitrogen to react with each other, and wherein forming a crystal nucleus other than a seed crystal is prevented by adjusting the carbon content of the melt, and the carbon content is adjusted to be in a range of 0.1 to atom % relative to a total of the melt, the gallium, and the carbon.
-20.
A method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, comprising: a preparation step of preparing the melt by adding the alkali metal, the gallium, and carbon to a crucible and then heating the crucible; an adjustment step of adjusting a carbon content of the melt; and a reaction step of causing the gallium and nitrogen to react with each other, wherein a non-polar surface of the GaN crystal is grown by adjusting the carbon
Layer stacks claimed or described, ordered top of device to substrate.
GaN seed crystal on substrate
Materials described outside the worked examples.
GaN crystal
GaN
alkali metal (Na)
Na
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph showing the relationship between the proportion of added carbon and the yield of a crystal in Example 1 and Comparative Example 1. 25 [
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
FWHM of rocking curve of double-crystal X-ray diffraction | — | GaN |
dislocation density of GaN crystal | — |
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Patent
Atlas literature
Patent
US 8,187,507Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram showing the structure of an exemplary semiconductor device. [
FIG. 2. In this case, a side surface 32 of the GaN crystal 3 is a c -plane. By contrast, when the front surface (upper surface) of the GaN crystal layer on the …
FIG. 3. This is because if the front 12 surface of the GaN crystal layer 2 is a c-plane, the GaN crystal 3 on the GaN crystal layer 2 is grown on both its …
FIG. 4 shows a photograph of the GaN crystal when the proportion of added carbon was 1 at. %.
FIG. 5 shows a photograph of the GaN crystal when the proportion of added carbon was 5 at.%.
FIG. 6 shows a photograph 30 of the GaN crystal when the proportion of added carbon was 0 at.% 21 (Comparative Example 1). As shown in
FIG. 7 is a graph showing the relationship between the proportion of added carbon and the yield of a crystal in Example 1 and Comparative Example 1. 25 [
FIG. 8 is a graph showing an example of the relationship between the pressure of nitrogen gas and the thickness (film thickness) of a GaN crystal. [
FIG. 9. In
FIG. 10. In
FIG. 11. Specifically, a sapphire substrate on which a thin GaN film layer (its upper surface being a c- plane) was provided was initially placed in an alumina …
FIG. 12 shows a photograph of this single GaN crystal. The GaN crystal of this example is the world's largest single GaN 30 crystal that has ever been …
FIG. 13. As shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, comprising: a preparation step of preparing the melt by adding the alkali metal, the gallium, and carbon to a crucible and then heating the crucible; an adjustment step of adjusting a carbon content of the melt; and a reaction step of causing the gallium and nitrogen to react with each other, wherein forming a crystal nucleus other than a seed crystal is prevented by adjusting the carbon content of the melt, and the carbon content is adjusted to be in a range of 0.1 to 5 atom % relative to a total of the melt, the gallium, and the carbon.
The GaN crystal producing method according to claim 1, wherein the adjustment step includes at least one of a removal step of removing a portion of carbon in the melt and an addition step of adding carbon into the melt.
The GaN crystal producing method according to claim 1, comprising: a seed crystal providing step of providing a seed crystal in the melt, wherein the seed crystal is a GaN crystal.
The GaN crystal producing method according to claim 1, wherein the carbon is at least one of carbon and a carbon compound.
The GaN crystal producing method according to claim 1, wherein a non-polar surface of the GaN crystal is grown by adjusting the carbon content of the melt.
The GaN crystal producing method according to claim 1, wherein the melt contains Na.
The GaN crystal producing method according to claim 1, further comprising: an agitation step of agitating the melt.
9.
-15.
A GaN crystal, wherein the GaN crystal has a non-polar surface as a major surface thereof, a full width at half maximum of a rocking curve of double-crystal X-ray diffraction within a range of more than 0 seconds to 200 seconds or less, and a dislocation density within a range of more than 0/cm2 and 106/cm 2 or less, wherein the GaN crystal is produced by method comprising: 3 S/N 12/514836 Responsive to the Office Action dated and the Advisory Action dated a preparation step of preparing a melt by adding an alkali metal, gallium, and carbon to a crucible and then heating the crucible; an adjustment step of adjusting a carbon content of the melt; and a reaction step of causing the gallium and nitrogen to react with each other, and wherein forming a crystal nucleus other than a seed crystal is prevented by adjusting the carbon content of the melt, and the carbon content is adjusted to be in a range of 0.1 to atom % relative to a total of the melt, the gallium, and the carbon.
-20.
A method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, comprising: a preparation step of preparing the melt by adding the alkali metal, the gallium, and carbon to a crucible and then heating the crucible; an adjustment step of adjusting a carbon content of the melt; and a reaction step of causing the gallium and nitrogen to react with each other, wherein a non-polar surface of the GaN crystal is grown by adjusting the carbon
Layer stacks claimed or described, ordered top of device to substrate.
GaN seed crystal on substrate
Materials described outside the worked examples.
GaN crystal
GaN
alkali metal (Na)
Na
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph showing the relationship between the proportion of added carbon and the yield of a crystal in Example 1 and Comparative Example 1. 25 [
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
FWHM of rocking curve of double-crystal X-ray diffraction | — | GaN |
dislocation density of GaN crystal | — |
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE RECTIFYING DEVICE
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Patent
Atlas literature
Patent
US 8,187,507Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram showing the structure of an exemplary semiconductor device. [
FIG. 2. In this case, a side surface 32 of the GaN crystal 3 is a c -plane. By contrast, when the front surface (upper surface) of the GaN crystal layer on the …
FIG. 3. This is because if the front 12 surface of the GaN crystal layer 2 is a c-plane, the GaN crystal 3 on the GaN crystal layer 2 is grown on both its …
FIG. 4 shows a photograph of the GaN crystal when the proportion of added carbon was 1 at. %.
FIG. 5 shows a photograph of the GaN crystal when the proportion of added carbon was 5 at.%.
FIG. 6 shows a photograph 30 of the GaN crystal when the proportion of added carbon was 0 at.% 21 (Comparative Example 1). As shown in
FIG. 7 is a graph showing the relationship between the proportion of added carbon and the yield of a crystal in Example 1 and Comparative Example 1. 25 [
FIG. 8 is a graph showing an example of the relationship between the pressure of nitrogen gas and the thickness (film thickness) of a GaN crystal. [
FIG. 9. In
FIG. 10. In
FIG. 11. Specifically, a sapphire substrate on which a thin GaN film layer (its upper surface being a c- plane) was provided was initially placed in an alumina …
FIG. 12 shows a photograph of this single GaN crystal. The GaN crystal of this example is the world's largest single GaN 30 crystal that has ever been …
FIG. 13. As shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, comprising: a preparation step of preparing the melt by adding the alkali metal, the gallium, and carbon to a crucible and then heating the crucible; an adjustment step of adjusting a carbon content of the melt; and a reaction step of causing the gallium and nitrogen to react with each other, wherein forming a crystal nucleus other than a seed crystal is prevented by adjusting the carbon content of the melt, and the carbon content is adjusted to be in a range of 0.1 to 5 atom % relative to a total of the melt, the gallium, and the carbon.
The GaN crystal producing method according to claim 1, wherein the adjustment step includes at least one of a removal step of removing a portion of carbon in the melt and an addition step of adding carbon into the melt.
The GaN crystal producing method according to claim 1, comprising: a seed crystal providing step of providing a seed crystal in the melt, wherein the seed crystal is a GaN crystal.
The GaN crystal producing method according to claim 1, wherein the carbon is at least one of carbon and a carbon compound.
The GaN crystal producing method according to claim 1, wherein a non-polar surface of the GaN crystal is grown by adjusting the carbon content of the melt.
The GaN crystal producing method according to claim 1, wherein the melt contains Na.
The GaN crystal producing method according to claim 1, further comprising: an agitation step of agitating the melt.
9.
-15.
A GaN crystal, wherein the GaN crystal has a non-polar surface as a major surface thereof, a full width at half maximum of a rocking curve of double-crystal X-ray diffraction within a range of more than 0 seconds to 200 seconds or less, and a dislocation density within a range of more than 0/cm2 and 106/cm 2 or less, wherein the GaN crystal is produced by method comprising: 3 S/N 12/514836 Responsive to the Office Action dated and the Advisory Action dated a preparation step of preparing a melt by adding an alkali metal, gallium, and carbon to a crucible and then heating the crucible; an adjustment step of adjusting a carbon content of the melt; and a reaction step of causing the gallium and nitrogen to react with each other, and wherein forming a crystal nucleus other than a seed crystal is prevented by adjusting the carbon content of the melt, and the carbon content is adjusted to be in a range of 0.1 to atom % relative to a total of the melt, the gallium, and the carbon.
-20.
A method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, comprising: a preparation step of preparing the melt by adding the alkali metal, the gallium, and carbon to a crucible and then heating the crucible; an adjustment step of adjusting a carbon content of the melt; and a reaction step of causing the gallium and nitrogen to react with each other, wherein a non-polar surface of the GaN crystal is grown by adjusting the carbon
Layer stacks claimed or described, ordered top of device to substrate.
GaN seed crystal on substrate
Materials described outside the worked examples.
GaN crystal
GaN
alkali metal (Na)
Na
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph showing the relationship between the proportion of added carbon and the yield of a crystal in Example 1 and Comparative Example 1. 25 [
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
FWHM of rocking curve of double-crystal X-ray diffraction | — | GaN |
dislocation density of GaN crystal | — |
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE RECTIFYING DEVICE
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Patent
Atlas literature
Patent
US 8,187,507Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram showing the structure of an exemplary semiconductor device. [
FIG. 2. In this case, a side surface 32 of the GaN crystal 3 is a c -plane. By contrast, when the front surface (upper surface) of the GaN crystal layer on the …
FIG. 3. This is because if the front 12 surface of the GaN crystal layer 2 is a c-plane, the GaN crystal 3 on the GaN crystal layer 2 is grown on both its …
FIG. 4 shows a photograph of the GaN crystal when the proportion of added carbon was 1 at. %.
FIG. 5 shows a photograph of the GaN crystal when the proportion of added carbon was 5 at.%.
FIG. 6 shows a photograph 30 of the GaN crystal when the proportion of added carbon was 0 at.% 21 (Comparative Example 1). As shown in
FIG. 7 is a graph showing the relationship between the proportion of added carbon and the yield of a crystal in Example 1 and Comparative Example 1. 25 [
FIG. 8 is a graph showing an example of the relationship between the pressure of nitrogen gas and the thickness (film thickness) of a GaN crystal. [
FIG. 9. In
FIG. 10. In
FIG. 11. Specifically, a sapphire substrate on which a thin GaN film layer (its upper surface being a c- plane) was provided was initially placed in an alumina …
FIG. 12 shows a photograph of this single GaN crystal. The GaN crystal of this example is the world's largest single GaN 30 crystal that has ever been …
FIG. 13. As shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, comprising: a preparation step of preparing the melt by adding the alkali metal, the gallium, and carbon to a crucible and then heating the crucible; an adjustment step of adjusting a carbon content of the melt; and a reaction step of causing the gallium and nitrogen to react with each other, wherein forming a crystal nucleus other than a seed crystal is prevented by adjusting the carbon content of the melt, and the carbon content is adjusted to be in a range of 0.1 to 5 atom % relative to a total of the melt, the gallium, and the carbon.
The GaN crystal producing method according to claim 1, wherein the adjustment step includes at least one of a removal step of removing a portion of carbon in the melt and an addition step of adding carbon into the melt.
The GaN crystal producing method according to claim 1, comprising: a seed crystal providing step of providing a seed crystal in the melt, wherein the seed crystal is a GaN crystal.
The GaN crystal producing method according to claim 1, wherein the carbon is at least one of carbon and a carbon compound.
The GaN crystal producing method according to claim 1, wherein a non-polar surface of the GaN crystal is grown by adjusting the carbon content of the melt.
The GaN crystal producing method according to claim 1, wherein the melt contains Na.
The GaN crystal producing method according to claim 1, further comprising: an agitation step of agitating the melt.
9.
-15.
A GaN crystal, wherein the GaN crystal has a non-polar surface as a major surface thereof, a full width at half maximum of a rocking curve of double-crystal X-ray diffraction within a range of more than 0 seconds to 200 seconds or less, and a dislocation density within a range of more than 0/cm2 and 106/cm 2 or less, wherein the GaN crystal is produced by method comprising: 3 S/N 12/514836 Responsive to the Office Action dated and the Advisory Action dated a preparation step of preparing a melt by adding an alkali metal, gallium, and carbon to a crucible and then heating the crucible; an adjustment step of adjusting a carbon content of the melt; and a reaction step of causing the gallium and nitrogen to react with each other, and wherein forming a crystal nucleus other than a seed crystal is prevented by adjusting the carbon content of the melt, and the carbon content is adjusted to be in a range of 0.1 to atom % relative to a total of the melt, the gallium, and the carbon.
-20.
A method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, comprising: a preparation step of preparing the melt by adding the alkali metal, the gallium, and carbon to a crucible and then heating the crucible; an adjustment step of adjusting a carbon content of the melt; and a reaction step of causing the gallium and nitrogen to react with each other, wherein a non-polar surface of the GaN crystal is grown by adjusting the carbon
Layer stacks claimed or described, ordered top of device to substrate.
GaN seed crystal on substrate
Materials described outside the worked examples.
GaN crystal
GaN
alkali metal (Na)
Na
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph showing the relationship between the proportion of added carbon and the yield of a crystal in Example 1 and Comparative Example 1. 25 [
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
FWHM of rocking curve of double-crystal X-ray diffraction | — | GaN |
dislocation density of GaN crystal | — |
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE RECTIFYING DEVICE
SYSTEMS AND METHODS FOR A RADIO FREQUENCY TRANSMITTER WITH IMPROVED LINEARITY AND POWER OUT UTILIZING PRE-DISTORTION AND A GAN (GALLIUM NITRIDE) POWER AMPLIFIER DEVICE
carbon
C
gallium
Ga
FIG. 8 is a graph showing an example of the relationship between the pressure of nitrogen gas and the thickness (film thickness) of a GaN crystal. [
FIG. 8 is a graph showing an example of the relationship between the pressure of nitrogen gas and the thickness (film thickness) of a GaN crystal. [
Duration | 0–200 seconds | — |
Duration | ≥ 0 seconds | — |
carbon
C
gallium
Ga
FIG. 8 is a graph showing an example of the relationship between the pressure of nitrogen gas and the thickness (film thickness) of a GaN crystal. [
FIG. 8 is a graph showing an example of the relationship between the pressure of nitrogen gas and the thickness (film thickness) of a GaN crystal. [
Duration | 0–200 seconds | — |
Duration | ≥ 0 seconds | — |
carbon
C
gallium
Ga
FIG. 8 is a graph showing an example of the relationship between the pressure of nitrogen gas and the thickness (film thickness) of a GaN crystal. [
FIG. 8 is a graph showing an example of the relationship between the pressure of nitrogen gas and the thickness (film thickness) of a GaN crystal. [
Duration | 0–200 seconds | — |
Duration | ≥ 0 seconds | — |
carbon
C
gallium
Ga
FIG. 8 is a graph showing an example of the relationship between the pressure of nitrogen gas and the thickness (film thickness) of a GaN crystal. [
FIG. 8 is a graph showing an example of the relationship between the pressure of nitrogen gas and the thickness (film thickness) of a GaN crystal. [
Duration | 0–200 seconds | — |
Duration | ≥ 0 seconds | — |