Patent
US 8,546,167Nitride-based semiconductor light-emitting element and method for fabricating same
Ryou KATO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,546,167Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a unit cell of GaN. In an Al aGabIne N (where 0 a, b, c 1 and a+b+c=1) semiconductor crystal, some of the Ga atoms shown in
FIG. 2 shows four primitive vectors a 1, a2, a3 and c, which are generally used to represent planes of a wurtzite crystal structure with four indices (i.e., …
FIG. 3 illustrate a (0001) plane, a (10-10) plane, a (11-20) plane, and a (10-12) plane, respectively. In this case, "-" attached on the left-hand side of a …
FIGS. 4(a) and 4(b) schematically illustrate the respective crystal structures of two nitride-based semiconductors, of which the principal surfaces are an m …
FIG. 5 is a cross-sectional view illustrating the structure of a semiconductor light-emitting element as disclosed in Patent Document No. 1.
FIG. 6. On the substrate 101, deposited in this order are an n-GaN layer 102, a GaN/InGaN multi-quantum well active layer 105 to emit light, a p-A l GaN …
FIG. 7 is a graph showing the results of an SIMS analysis that was carried out on such an LED that was formed through the c-plane crystal growing process.
FIG. 8 is a graph showing the results of an SIMS analysis that was carried out on an LED that was formed through an m -plane crystal growing process.
FIG. 9. The differences between the two LE D s shown in
FIG. 10 is a graph showing the results of an SIMS analysis that was carried out on the LED shown in
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 12 is a graph showing how the concentration of oxygen atoms introduced unintentionally into the GaN/InGaN multi-quantum well active layer changes with the …
FIG. 13, at growth rates of 1 m m per minute and 3 nm per minute, internal quantum efficiency exceeding 50% could not be achieved irrespective of the thickness …
FIG. 14 is a schematic representation illustrating the structure of a gallium nitride-based compound semiconductor light-emitting element as an embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/405,725 PATENT AMENDMENTS IN THE CLAIMS: Claims 1.-4.
canceled
canceled
canceled
A method for fabricating a semiconductor light-emitting element that includes an n-type gallium nitride-based compound semiconductor layer, a p-type gallium nitride-based compound semiconductor layer, and a light-emitting layer, which is interposed between the n- and p-type gallium nitride-based compound semiconductor layers, the method comprising the steps of: (a) loading a substrate into a reaction chamber of a metalorganic chemical vapor deposition system; and (b) growing a (10-10) m -plane semiconductor layer, including an In x Ga1.x N (where 0<x<1) well layer that has a thickness of 8 nm or more and 16 nm or less, as a light-emitting layer at a qrowth rate of not less than 7 nanom et ers/minute on the substrate by performing a metalorganic chemical vapor deposition process, wherein the step (b) includes setting the growth rate of t he In xGa1.xN (whe re 0<x <1) well layer so that oxygen atoms included in the light-emitting layer have a conce ntration of 2x-1-9 3.0x107 cm⁻³ or less.
The method of claim 5, wherein the semiconductor light-emitting element further comprises an overflow suppressing layer, which includes A I, between the p-type gallium nitride-based compound semiconductor layer and the light-emitting layer.
The method of claim 5, wherein the growth rate is not more than 20 nanometers/minute.
The method of claim 5, wherein the concentration of the oxygen atoms is not less than 1.0x10 1 cm -3
Layer stacks claimed or described, ordered top of device to substrate.
m-plane nitride-based semiconductor light-emitting element
Materials described outside the worked examples.
InxGa₁-xN well layer
InxGa₁-xN
n-type gallium nitride-based compound semiconductor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph showing the results of an SIMS analysis that was carried out on such an LED that was formed through the c-plane crystal growing process.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
oxygen atom concentration in InxGa1-xN well layer (claimed upper limit) | ≤ 300000000000000000 | InxGa₁-xN |
oxygen atom concentration in GaN/InGaN MQW active layer (abstract upper limit) | ≤ 300000000000000000 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,546,167Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a unit cell of GaN. In an Al aGabIne N (where 0 a, b, c 1 and a+b+c=1) semiconductor crystal, some of the Ga atoms shown in
FIG. 2 shows four primitive vectors a 1, a2, a3 and c, which are generally used to represent planes of a wurtzite crystal structure with four indices (i.e., …
FIG. 3 illustrate a (0001) plane, a (10-10) plane, a (11-20) plane, and a (10-12) plane, respectively. In this case, "-" attached on the left-hand side of a …
FIGS. 4(a) and 4(b) schematically illustrate the respective crystal structures of two nitride-based semiconductors, of which the principal surfaces are an m …
FIG. 5 is a cross-sectional view illustrating the structure of a semiconductor light-emitting element as disclosed in Patent Document No. 1.
FIG. 6. On the substrate 101, deposited in this order are an n-GaN layer 102, a GaN/InGaN multi-quantum well active layer 105 to emit light, a p-A l GaN …
FIG. 7 is a graph showing the results of an SIMS analysis that was carried out on such an LED that was formed through the c-plane crystal growing process.
FIG. 8 is a graph showing the results of an SIMS analysis that was carried out on an LED that was formed through an m -plane crystal growing process.
FIG. 9. The differences between the two LE D s shown in
FIG. 10 is a graph showing the results of an SIMS analysis that was carried out on the LED shown in
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 12 is a graph showing how the concentration of oxygen atoms introduced unintentionally into the GaN/InGaN multi-quantum well active layer changes with the …
FIG. 13, at growth rates of 1 m m per minute and 3 nm per minute, internal quantum efficiency exceeding 50% could not be achieved irrespective of the thickness …
FIG. 14 is a schematic representation illustrating the structure of a gallium nitride-based compound semiconductor light-emitting element as an embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/405,725 PATENT AMENDMENTS IN THE CLAIMS: Claims 1.-4.
canceled
canceled
canceled
A method for fabricating a semiconductor light-emitting element that includes an n-type gallium nitride-based compound semiconductor layer, a p-type gallium nitride-based compound semiconductor layer, and a light-emitting layer, which is interposed between the n- and p-type gallium nitride-based compound semiconductor layers, the method comprising the steps of: (a) loading a substrate into a reaction chamber of a metalorganic chemical vapor deposition system; and (b) growing a (10-10) m -plane semiconductor layer, including an In x Ga1.x N (where 0<x<1) well layer that has a thickness of 8 nm or more and 16 nm or less, as a light-emitting layer at a qrowth rate of not less than 7 nanom et ers/minute on the substrate by performing a metalorganic chemical vapor deposition process, wherein the step (b) includes setting the growth rate of t he In xGa1.xN (whe re 0<x <1) well layer so that oxygen atoms included in the light-emitting layer have a conce ntration of 2x-1-9 3.0x107 cm⁻³ or less.
The method of claim 5, wherein the semiconductor light-emitting element further comprises an overflow suppressing layer, which includes A I, between the p-type gallium nitride-based compound semiconductor layer and the light-emitting layer.
The method of claim 5, wherein the growth rate is not more than 20 nanometers/minute.
The method of claim 5, wherein the concentration of the oxygen atoms is not less than 1.0x10 1 cm -3
Layer stacks claimed or described, ordered top of device to substrate.
m-plane nitride-based semiconductor light-emitting element
Materials described outside the worked examples.
InxGa₁-xN well layer
InxGa₁-xN
n-type gallium nitride-based compound semiconductor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph showing the results of an SIMS analysis that was carried out on such an LED that was formed through the c-plane crystal growing process.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
oxygen atom concentration in InxGa1-xN well layer (claimed upper limit) | ≤ 300000000000000000 | InxGa₁-xN |
oxygen atom concentration in GaN/InGaN MQW active layer (abstract upper limit) | ≤ 300000000000000000 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,546,167Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a unit cell of GaN. In an Al aGabIne N (where 0 a, b, c 1 and a+b+c=1) semiconductor crystal, some of the Ga atoms shown in
FIG. 2 shows four primitive vectors a 1, a2, a3 and c, which are generally used to represent planes of a wurtzite crystal structure with four indices (i.e., …
FIG. 3 illustrate a (0001) plane, a (10-10) plane, a (11-20) plane, and a (10-12) plane, respectively. In this case, "-" attached on the left-hand side of a …
FIGS. 4(a) and 4(b) schematically illustrate the respective crystal structures of two nitride-based semiconductors, of which the principal surfaces are an m …
FIG. 5 is a cross-sectional view illustrating the structure of a semiconductor light-emitting element as disclosed in Patent Document No. 1.
FIG. 6. On the substrate 101, deposited in this order are an n-GaN layer 102, a GaN/InGaN multi-quantum well active layer 105 to emit light, a p-A l GaN …
FIG. 7 is a graph showing the results of an SIMS analysis that was carried out on such an LED that was formed through the c-plane crystal growing process.
FIG. 8 is a graph showing the results of an SIMS analysis that was carried out on an LED that was formed through an m -plane crystal growing process.
FIG. 9. The differences between the two LE D s shown in
FIG. 10 is a graph showing the results of an SIMS analysis that was carried out on the LED shown in
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 12 is a graph showing how the concentration of oxygen atoms introduced unintentionally into the GaN/InGaN multi-quantum well active layer changes with the …
FIG. 13, at growth rates of 1 m m per minute and 3 nm per minute, internal quantum efficiency exceeding 50% could not be achieved irrespective of the thickness …
FIG. 14 is a schematic representation illustrating the structure of a gallium nitride-based compound semiconductor light-emitting element as an embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/405,725 PATENT AMENDMENTS IN THE CLAIMS: Claims 1.-4.
canceled
canceled
canceled
A method for fabricating a semiconductor light-emitting element that includes an n-type gallium nitride-based compound semiconductor layer, a p-type gallium nitride-based compound semiconductor layer, and a light-emitting layer, which is interposed between the n- and p-type gallium nitride-based compound semiconductor layers, the method comprising the steps of: (a) loading a substrate into a reaction chamber of a metalorganic chemical vapor deposition system; and (b) growing a (10-10) m -plane semiconductor layer, including an In x Ga1.x N (where 0<x<1) well layer that has a thickness of 8 nm or more and 16 nm or less, as a light-emitting layer at a qrowth rate of not less than 7 nanom et ers/minute on the substrate by performing a metalorganic chemical vapor deposition process, wherein the step (b) includes setting the growth rate of t he In xGa1.xN (whe re 0<x <1) well layer so that oxygen atoms included in the light-emitting layer have a conce ntration of 2x-1-9 3.0x107 cm⁻³ or less.
The method of claim 5, wherein the semiconductor light-emitting element further comprises an overflow suppressing layer, which includes A I, between the p-type gallium nitride-based compound semiconductor layer and the light-emitting layer.
The method of claim 5, wherein the growth rate is not more than 20 nanometers/minute.
The method of claim 5, wherein the concentration of the oxygen atoms is not less than 1.0x10 1 cm -3
Layer stacks claimed or described, ordered top of device to substrate.
m-plane nitride-based semiconductor light-emitting element
Materials described outside the worked examples.
InxGa₁-xN well layer
InxGa₁-xN
n-type gallium nitride-based compound semiconductor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph showing the results of an SIMS analysis that was carried out on such an LED that was formed through the c-plane crystal growing process.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
oxygen atom concentration in InxGa1-xN well layer (claimed upper limit) | ≤ 300000000000000000 | InxGa₁-xN |
oxygen atom concentration in GaN/InGaN MQW active layer (abstract upper limit) | ≤ 300000000000000000 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,546,167Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a unit cell of GaN. In an Al aGabIne N (where 0 a, b, c 1 and a+b+c=1) semiconductor crystal, some of the Ga atoms shown in
FIG. 2 shows four primitive vectors a 1, a2, a3 and c, which are generally used to represent planes of a wurtzite crystal structure with four indices (i.e., …
FIG. 3 illustrate a (0001) plane, a (10-10) plane, a (11-20) plane, and a (10-12) plane, respectively. In this case, "-" attached on the left-hand side of a …
FIGS. 4(a) and 4(b) schematically illustrate the respective crystal structures of two nitride-based semiconductors, of which the principal surfaces are an m …
FIG. 5 is a cross-sectional view illustrating the structure of a semiconductor light-emitting element as disclosed in Patent Document No. 1.
FIG. 6. On the substrate 101, deposited in this order are an n-GaN layer 102, a GaN/InGaN multi-quantum well active layer 105 to emit light, a p-A l GaN …
FIG. 7 is a graph showing the results of an SIMS analysis that was carried out on such an LED that was formed through the c-plane crystal growing process.
FIG. 8 is a graph showing the results of an SIMS analysis that was carried out on an LED that was formed through an m -plane crystal growing process.
FIG. 9. The differences between the two LE D s shown in
FIG. 10 is a graph showing the results of an SIMS analysis that was carried out on the LED shown in
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 12 is a graph showing how the concentration of oxygen atoms introduced unintentionally into the GaN/InGaN multi-quantum well active layer changes with the …
FIG. 13, at growth rates of 1 m m per minute and 3 nm per minute, internal quantum efficiency exceeding 50% could not be achieved irrespective of the thickness …
FIG. 14 is a schematic representation illustrating the structure of a gallium nitride-based compound semiconductor light-emitting element as an embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/405,725 PATENT AMENDMENTS IN THE CLAIMS: Claims 1.-4.
canceled
canceled
canceled
A method for fabricating a semiconductor light-emitting element that includes an n-type gallium nitride-based compound semiconductor layer, a p-type gallium nitride-based compound semiconductor layer, and a light-emitting layer, which is interposed between the n- and p-type gallium nitride-based compound semiconductor layers, the method comprising the steps of: (a) loading a substrate into a reaction chamber of a metalorganic chemical vapor deposition system; and (b) growing a (10-10) m -plane semiconductor layer, including an In x Ga1.x N (where 0<x<1) well layer that has a thickness of 8 nm or more and 16 nm or less, as a light-emitting layer at a qrowth rate of not less than 7 nanom et ers/minute on the substrate by performing a metalorganic chemical vapor deposition process, wherein the step (b) includes setting the growth rate of t he In xGa1.xN (whe re 0<x <1) well layer so that oxygen atoms included in the light-emitting layer have a conce ntration of 2x-1-9 3.0x107 cm⁻³ or less.
The method of claim 5, wherein the semiconductor light-emitting element further comprises an overflow suppressing layer, which includes A I, between the p-type gallium nitride-based compound semiconductor layer and the light-emitting layer.
The method of claim 5, wherein the growth rate is not more than 20 nanometers/minute.
The method of claim 5, wherein the concentration of the oxygen atoms is not less than 1.0x10 1 cm -3
Layer stacks claimed or described, ordered top of device to substrate.
m-plane nitride-based semiconductor light-emitting element
Materials described outside the worked examples.
InxGa₁-xN well layer
InxGa₁-xN
n-type gallium nitride-based compound semiconductor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a graph showing the results of an SIMS analysis that was carried out on such an LED that was formed through the c-plane crystal growing process.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
oxygen atom concentration in InxGa1-xN well layer (claimed upper limit) | ≤ 300000000000000000 | InxGa₁-xN |
oxygen atom concentration in GaN/InGaN MQW active layer (abstract upper limit) | ≤ 300000000000000000 |
Related documents with shared materials, methods, properties, or citations.
Al-containing overflow suppressing layer
GaN/InGaN multi-quantum well active layer
n-GaN layer
GaN
FIG. 8 is a graph showing the results of an SIMS analysis that was carried out on an LED that was formed through an m -plane crystal growing process.
FIG. 10 is a graph showing the results of an SIMS analysis that was carried out on the LED shown in
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 12 is a graph showing how the concentration of oxygen atoms introduced unintentionally into the GaN/InGaN multi-quantum well active layer changes with the …
FIG. 13, at growth rates of 1 m m per minute and 3 nm per minute, internal quantum efficiency exceeding 50% could not be achieved irrespective of the thickness …
FIG. 13, at growth rates of 1 m m per minute and 3 nm per minute, internal quantum efficiency exceeding 50% could not be achieved irrespective of the thickness …
GaN/InGaN multi-quantum well active layer |
Thickness | 3–9 nm | — |
Thickness | 8–16 nm | — |
Thickness | 4–8 nm | — |
Thickness | 6–8 nm | — |
Flow Rate | 4–10 sccm | — |
Thickness | 6–104 nm | — |
Thickness | ≥ 20 nm | — |
Al-containing overflow suppressing layer
GaN/InGaN multi-quantum well active layer
n-GaN layer
GaN
FIG. 8 is a graph showing the results of an SIMS analysis that was carried out on an LED that was formed through an m -plane crystal growing process.
FIG. 10 is a graph showing the results of an SIMS analysis that was carried out on the LED shown in
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 12 is a graph showing how the concentration of oxygen atoms introduced unintentionally into the GaN/InGaN multi-quantum well active layer changes with the …
FIG. 13, at growth rates of 1 m m per minute and 3 nm per minute, internal quantum efficiency exceeding 50% could not be achieved irrespective of the thickness …
FIG. 13, at growth rates of 1 m m per minute and 3 nm per minute, internal quantum efficiency exceeding 50% could not be achieved irrespective of the thickness …
GaN/InGaN multi-quantum well active layer |
Thickness | 3–9 nm | — |
Thickness | 8–16 nm | — |
Thickness | 4–8 nm | — |
Thickness | 6–8 nm | — |
Flow Rate | 4–10 sccm | — |
Thickness | 6–104 nm | — |
Thickness | ≥ 20 nm | — |
Al-containing overflow suppressing layer
GaN/InGaN multi-quantum well active layer
n-GaN layer
GaN
FIG. 8 is a graph showing the results of an SIMS analysis that was carried out on an LED that was formed through an m -plane crystal growing process.
FIG. 10 is a graph showing the results of an SIMS analysis that was carried out on the LED shown in
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 12 is a graph showing how the concentration of oxygen atoms introduced unintentionally into the GaN/InGaN multi-quantum well active layer changes with the …
FIG. 13, at growth rates of 1 m m per minute and 3 nm per minute, internal quantum efficiency exceeding 50% could not be achieved irrespective of the thickness …
FIG. 13, at growth rates of 1 m m per minute and 3 nm per minute, internal quantum efficiency exceeding 50% could not be achieved irrespective of the thickness …
GaN/InGaN multi-quantum well active layer |
Thickness | 3–9 nm | — |
Thickness | 8–16 nm | — |
Thickness | 4–8 nm | — |
Thickness | 6–8 nm | — |
Flow Rate | 4–10 sccm | — |
Thickness | 6–104 nm | — |
Thickness | ≥ 20 nm | — |
Al-containing overflow suppressing layer
GaN/InGaN multi-quantum well active layer
n-GaN layer
GaN
FIG. 8 is a graph showing the results of an SIMS analysis that was carried out on an LED that was formed through an m -plane crystal growing process.
FIG. 10 is a graph showing the results of an SIMS analysis that was carried out on the LED shown in
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 11 were obtained using a sample in which an undoped GaN layer was deposited to a thickness of 1.5 11 m to 2.5 1 m on an m -plane substrate and then a …
FIG. 12 is a graph showing how the concentration of oxygen atoms introduced unintentionally into the GaN/InGaN multi-quantum well active layer changes with the …
FIG. 13, at growth rates of 1 m m per minute and 3 nm per minute, internal quantum efficiency exceeding 50% could not be achieved irrespective of the thickness …
FIG. 13, at growth rates of 1 m m per minute and 3 nm per minute, internal quantum efficiency exceeding 50% could not be achieved irrespective of the thickness …
GaN/InGaN multi-quantum well active layer |
Thickness | 3–9 nm | — |
Thickness | 8–16 nm | — |
Thickness | 4–8 nm | — |
Thickness | 6–8 nm | — |
Flow Rate | 4–10 sccm | — |
Thickness | 6–104 nm | — |
Thickness | ≥ 20 nm | — |