GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE

Tan SAKONG

Patent

Atlas literature

Patent

US 8,378,381

GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE

Tan SAKONG

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 is a cross-sectional view illustrating a GaN-based semiconductor light emitting device according to an exemplary embodiment of the invention; 15 [0020]

FIG. 2

FIG. 2 is a magniﬁed view illustrating an active layer of the GaN-based semiconductor light emitting device shown in

FIG. 3

FIG. 3 is an energy band diagram of the GaN-based semiconductor light emitting device shown in

FIG. 4

FIGS. 4A and 4B are energy band diagrams of the GaN semiconductor light emitting device according to another exemplary embodiment of the invention; [0023]

FIG. 5

FIG. 5 is a cross-sectional view illustrating a GaN-based semiconductor light emitting device according to 25 another exemplary embodiment of the invention; …

FIG. 6

FIG. 6 is a magniﬁed view illustrating an active layer of the GaN-based semiconductor light emitting device shown in

FIG. 7

FIGS. 7A to 7C are energy band diagrams of the GaN-based 5 semiconductor light emitting device shown in

FIG. 8

FIGS. 8A to 8D are energy band diagrams of GaN-based semiconductor light emitting device according to still another 10 exemplary embodiment of the invention; …

FIG. 9

performance graph

FIG. 9 is a graph illustrating optical output with respect to input current of GaN-based semiconductor light emitting devices according to Comparative Examples …

FIG. 10

performance graph

FIG. 10 is a graph illustrating relative internal quantum eﬃciency with respect to input current of GaN-based semiconductor light emitting devices according to …

FIG. 11

performance graph

FIG. 11 is a graph illustrating peak wavelength with 20 respect to input current of GaN-based semiconductor light emitting devices according to according to …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

9 independent · 5 dependent

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9
IndependentAlxInyGa₁-x-yN (0<x<1, 0<y<1, 0<x+y<1)InxGa₁-xN (0<x<0.2) or GaNInxGa₁-xN (0<x<1)InxGa₁-xN (0<x<0.2) or GaNAlxInyGa₁-x-yN (0<x<1, 0<y<1, 0<x+y<1) or AlxGa₁-xN (0<x<1) or GaNGaN-based semiconductor light emitting device
A semiconductor light emitting device comprising: a substrate; and a light emitting structure having a ﬁrst semiconductor layer, an active layer and a second semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a ﬁrst barrier layer formed on the ﬁrst semiconductor layer and having [[a]] an energy band higher than an energy band of a well layer; a second barrier layer formed on the ﬁrst barrier layer and having an energy band higher than an energy band of the ﬁrst barrier layer; [[a]] the well layer formed on the second barrier layer and having an energy band lower than an energy band of the ﬁrst and second semiconductor layers; a third barrier layer formed on the well layer and having an energy band higher than an energy band of the well layer; and a lattice mismatch relaxation layer formed on the third barrier, the lattice mismatch relaxation layer having a lattice constant greater than a lattice constant of the well layer and smaller than a lattice constant of the second semiconductor layer.
1. 10
  Dependent← claim 9AlxInyGa₁-x-yN (0<x<1, 0<y<1, 0<x+y<1) or AlxGa₁-xN (0<x<1) or GaNGaN-based semiconductor light emitting device
  The semiconductor light emitting device of claim 9, wherein a composition changes within the lattice mismatch relaxation layer.
2. 11
  Dependent← claim 9GaN-based semiconductor light emitting device
  The semiconductor light emitting device of claim 9, further comprising at least one more active layer.
3. 12
  Dependent← claim 9AlxInyGa₁-x-yN (0<x<1, 0<y<1, 0<x+y<1) or AlxGa₁-xN (0<x<1) or GaNGaN-based semiconductor light emitting device
  The semiconductor light emitting device of claim 9, wherein the lattice mismatch relaxation layer is doped or undoped.
4. 14
  Dependent← claim 9AlxInyGa₁-x-yN (0<x<1, 0<y<1, 0<x+y<1)GaN-based semiconductor light emitting device
  The semiconductor light emitting device of claim 9, wherein the active layer further comprises a fourth barrier layer formed between the third barrier layer and the lattice mismatch relaxation

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based semiconductor light emitting device

p-type GaN-based semiconductor layerp-type cladding

AlxInyGa₁-x-yN (0<x<1, 0<y<1, 0<x+y<1) or AlxGa₁-xN (0<x<1) or GaNlattice mismatch relaxation layer

InxGa₁-xN (0<x<0.2) or GaNthird barrier layer

InxGa₁-xN (0<x<1)well layer

InxGa₁-xN (0<x<0.2) or GaNsecond barrier layer

AlxInyGa₁-x-yN (0<x<1, 0<y<1, 0<x+y<1)

Materials

Materials described outside the worked examples.

AlInGaN first barrier layer

AlxInyGa₁-x-yN (0<x<1, 0<y<1, 0<x+y<1)

First Barrier Layer

Fourth Barrier Layer

InGaN or GaN second barrier layer

InxGa₁-xN (0<x<0.2) or GaN

Second Barrier Layer

Third Barrier Layer

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

device performance measurement

Device Performance Measurement

FIG. 9 is a graph illustrating optical output with respect to input current of GaN-based semiconductor light emitting devices according to Comparative Examples …

Figure references

FIG. 9

GaN

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE | Matter42 Literature