Abstract

One-dimensional (1D) nanostructures of transition metal trichalcogenides (TMT) show unique properties through the combination of their anisotropic bonding and low dimensionality. Scalable synthesis approaches that enable control over the morphology, dimensions, and interfaces of 1D TMTs with other nanoscale materials could allow these properties to be used in novel devices. Here, we report chemical vapor deposition of a 1D TMT, namely niobium trisulfide (NbS₃) in the form of nanowires, on different substrates, including bulk substrates (amorphous SiO₂/Si and crystalline c-sapphire) and several two-dimensional (2D) van der Waals materials (graphene, h-BN, CrSBr). We demonstrate high growth yield with axial growth rates of up to 40 µm/min and with two different growth modes: short nanowires of rectangular cross-section, and unusual long, "chained nanowires" up to 100 µm in length with sawtooth morphology. We discuss a mechanism that accounts for the two morphologies and discuss how the structure can be tuned through substrate choice and growth conditions. We further demonstrate guided assembly at the edges of graphene and h-BN, as well as epitaxial growth on few-layer CrSBr and c-sapphire. These results open pathways to explore scalable synthesis and directed assembly of 1D TMT nanomaterials in unique morphologies.

Abstract

One-dimensional (1D) nanostructures of transition metal trichalcogenides (TMT) show unique properties through the combination of their anisotropic bonding and low dimensionality. Scalable synthesis approaches that enable control over the morphology, dimensions, and interfaces of 1D TMTs with other nanoscale materials could allow these properties to be used in novel devices. Here, we report chemical vapor deposition of a 1D TMT, namely niobium trisulfide (NbS₃) in the form of nanowires, on different substrates, including bulk substrates (amorphous SiO₂/Si and crystalline c-sapphire) and several two-dimensional (2D) van der Waals materials (graphene, h-BN, CrSBr). We demonstrate high growth yield with axial growth rates of up to 40 µm/min and with two different growth modes: short nanowires of rectangular cross-section, and unusual long, "chained nanowires" up to 100 µm in length with sawtooth morphology. We discuss a mechanism that accounts for the two morphologies and discuss how the structure can be tuned through substrate choice and growth conditions. We further demonstrate guided assembly at the edges of graphene and h-BN, as well as epitaxial growth on few-layer CrSBr and c-sapphire. These results open pathways to explore scalable synthesis and directed assembly of 1D TMT nanomaterials in unique morphologies.

Abstract

One-dimensional (1D) nanostructures of transition metal trichalcogenides (TMT) show unique properties through the combination of their anisotropic bonding and low dimensionality. Scalable synthesis approaches that enable control over the morphology, dimensions, and interfaces of 1D TMTs with other nanoscale materials could allow these properties to be used in novel devices. Here, we report chemical vapor deposition of a 1D TMT, namely niobium trisulfide (NbS₃) in the form of nanowires, on different substrates, including bulk substrates (amorphous SiO₂/Si and crystalline c-sapphire) and several two-dimensional (2D) van der Waals materials (graphene, h-BN, CrSBr). We demonstrate high growth yield with axial growth rates of up to 40 µm/min and with two different growth modes: short nanowires of rectangular cross-section, and unusual long, "chained nanowires" up to 100 µm in length with sawtooth morphology. We discuss a mechanism that accounts for the two morphologies and discuss how the structure can be tuned through substrate choice and growth conditions. We further demonstrate guided assembly at the edges of graphene and h-BN, as well as epitaxial growth on few-layer CrSBr and c-sapphire. These results open pathways to explore scalable synthesis and directed assembly of 1D TMT nanomaterials in unique morphologies.

Abstract

One-dimensional (1D) nanostructures of transition metal trichalcogenides (TMT) show unique properties through the combination of their anisotropic bonding and low dimensionality. Scalable synthesis approaches that enable control over the morphology, dimensions, and interfaces of 1D TMTs with other nanoscale materials could allow these properties to be used in novel devices. Here, we report chemical vapor deposition of a 1D TMT, namely niobium trisulfide (NbS₃) in the form of nanowires, on different substrates, including bulk substrates (amorphous SiO₂/Si and crystalline c-sapphire) and several two-dimensional (2D) van der Waals materials (graphene, h-BN, CrSBr). We demonstrate high growth yield with axial growth rates of up to 40 µm/min and with two different growth modes: short nanowires of rectangular cross-section, and unusual long, "chained nanowires" up to 100 µm in length with sawtooth morphology. We discuss a mechanism that accounts for the two morphologies and discuss how the structure can be tuned through substrate choice and growth conditions. We further demonstrate guided assembly at the edges of graphene and h-BN, as well as epitaxial growth on few-layer CrSBr and c-sapphire. These results open pathways to explore scalable synthesis and directed assembly of 1D TMT nanomaterials in unique morphologies.